KR101454522B1 - 포토레지스트 시뮬레이션 - Google Patents

포토레지스트 시뮬레이션 Download PDF

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KR101454522B1
KR101454522B1 KR1020127013240A KR20127013240A KR101454522B1 KR 101454522 B1 KR101454522 B1 KR 101454522B1 KR 1020127013240 A KR1020127013240 A KR 1020127013240A KR 20127013240 A KR20127013240 A KR 20127013240A KR 101454522 B1 KR101454522 B1 KR 101454522B1
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photoresist
determining
acid
simulated
virtual
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KR20120085841A (ko
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존 제이 비아포레
마크 디 스미스
존 에스 그레이브스
데이비드 블랑켄십
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케이엘에이-텐코 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
    • G16C—COMPUTATIONAL CHEMISTRY; CHEMOINFORMATICS; COMPUTATIONAL MATERIALS SCIENCE
    • G16C20/00—Chemoinformatics, i.e. ICT specially adapted for the handling of physicochemical or structural data of chemical particles, elements, compounds or mixtures
    • G16C20/10—Analysis or design of chemical reactions, syntheses or processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Computing Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020127013240A 2009-11-12 2010-11-09 포토레지스트 시뮬레이션 Active KR101454522B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US26053309P 2009-11-12 2009-11-12
US61/260,533 2009-11-12
US12/915,455 US8589827B2 (en) 2009-11-12 2010-10-29 Photoresist simulation
US12/915,455 2010-10-29
PCT/US2010/055937 WO2011059947A2 (en) 2009-11-12 2010-11-09 Photoresist simulation

Publications (2)

Publication Number Publication Date
KR20120085841A KR20120085841A (ko) 2012-08-01
KR101454522B1 true KR101454522B1 (ko) 2014-10-24

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Country Link
US (2) US8589827B2 (https=)
EP (1) EP2499661B1 (https=)
JP (1) JP5719850B2 (https=)
KR (1) KR101454522B1 (https=)
WO (1) WO2011059947A2 (https=)

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TWI575566B (zh) 2014-02-24 2017-03-21 東京威力科創股份有限公司 與光敏化化學放大光阻化學品及程序一起使用的方法及技術
US10020195B2 (en) 2014-02-25 2018-07-10 Tokyo Electron Limited Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists
US9733576B2 (en) * 2014-03-17 2017-08-15 Kla-Tencor Corporation Model for accurate photoresist profile prediction
CN103887199B (zh) * 2014-03-20 2017-01-11 上海华力微电子有限公司 采用暗场硅片检测机台检测光阻损伤的方法
US10453748B2 (en) * 2015-08-27 2019-10-22 Micron Technology, Inc. Methods of forming semiconductor device structures including stair step structures
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
US10429745B2 (en) * 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
CN109313395B (zh) 2016-05-13 2021-05-14 东京毅力科创株式会社 通过使用光剂来进行的临界尺寸控制
WO2017197279A1 (en) 2016-05-13 2017-11-16 Tokyo Electron Limited Critical dimension control by use of photo-sensitized chemicals or photo-sensitized chemically amplified resist
US10795267B2 (en) 2016-12-02 2020-10-06 Asml Netherlands B.V. Model for estimating stochastic variation
FR3060752B1 (fr) * 2016-12-15 2019-05-10 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de mise en œuvre d'une technique de caracterisation cd-sem
US10474042B2 (en) * 2017-03-22 2019-11-12 Kla-Tencor Corporation Stochastically-aware metrology and fabrication
WO2018206275A1 (en) 2017-05-12 2018-11-15 Asml Netherlands B.V. Methods for evaluating resist development
US11493850B2 (en) 2019-07-23 2022-11-08 Samsung Electronics Co., Ltd. Lithography method using multi-scale simulation, semiconductor device manufacturing method and exposure equipment
KR102898764B1 (ko) 2019-08-16 2025-12-10 도쿄엘렉트론가부시키가이샤 확률 중심 결함 교정을 위한 방법 및 공정
JP7310466B2 (ja) * 2019-09-10 2023-07-19 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム評価方法
JP6741838B1 (ja) * 2019-09-11 2020-08-19 東京応化工業株式会社 情報処理システム、情報処理装置、情報処理方法及びプログラム
JP6832463B1 (ja) * 2020-04-06 2021-02-24 東京応化工業株式会社 情報処理システム、情報処理装置、情報処理方法及びプログラム
TWI877374B (zh) * 2020-06-05 2025-03-21 美商新思科技股份有限公司 校正在精簡模型中的隨機訊號的方法及系統
KR20220149823A (ko) * 2021-04-30 2022-11-09 삼성전자주식회사 멀티-스케일 시뮬레이션을 이용한 리소그라피 방법, 및 그 리소그라피 방법을 기반으로 한 반도체 소자 제조방법 및 노광 설비
CN114488705B (zh) * 2022-01-13 2026-02-27 东方晶源微电子科技(北京)股份有限公司 一种负向显影光刻胶模型优化方法
CN115831240B (zh) * 2022-12-08 2025-10-14 广东省大湾区集成电路与系统应用研究院 建模方法、装置、计算机可读存储介质以及处理器
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KR20060103972A (ko) * 2005-03-29 2006-10-09 삼성전자주식회사 미세구조물의 프로파일 검사 방법
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KR101129940B1 (ko) 2004-01-30 2012-03-28 도쿄엘렉트론가부시키가이샤 레티클/마스크 시스템의 적응형 실시간 제어를 제공하는 열 처리 시스템 및 열 처리 시스템의 작동 방법
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Also Published As

Publication number Publication date
JP5719850B2 (ja) 2015-05-20
KR20120085841A (ko) 2012-08-01
US20140067346A1 (en) 2014-03-06
US20110112809A1 (en) 2011-05-12
WO2011059947A3 (en) 2011-10-13
EP2499661A2 (en) 2012-09-19
EP2499661B1 (en) 2018-08-08
US8589827B2 (en) 2013-11-19
EP2499661A4 (en) 2014-03-05
JP2013511152A (ja) 2013-03-28
WO2011059947A2 (en) 2011-05-19
US9679116B2 (en) 2017-06-13

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