JP5719850B2 - フォトレジストシミュレーション - Google Patents

フォトレジストシミュレーション Download PDF

Info

Publication number
JP5719850B2
JP5719850B2 JP2012538879A JP2012538879A JP5719850B2 JP 5719850 B2 JP5719850 B2 JP 5719850B2 JP 2012538879 A JP2012538879 A JP 2012538879A JP 2012538879 A JP2012538879 A JP 2012538879A JP 5719850 B2 JP5719850 B2 JP 5719850B2
Authority
JP
Japan
Prior art keywords
photoresist
acid
virtual
determining
volume
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012538879A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013511152A5 (https=
JP2013511152A (ja
Inventor
ビアフォア・ジョン・ジェイ
スミス・マーク・ディー
グレーブス・ジョン・エス
ブランケンシップ・デビッド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Publication of JP2013511152A publication Critical patent/JP2013511152A/ja
Publication of JP2013511152A5 publication Critical patent/JP2013511152A5/ja
Application granted granted Critical
Publication of JP5719850B2 publication Critical patent/JP5719850B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
    • G16C—COMPUTATIONAL CHEMISTRY; CHEMOINFORMATICS; COMPUTATIONAL MATERIALS SCIENCE
    • G16C20/00—Chemoinformatics, i.e. ICT specially adapted for the handling of physicochemical or structural data of chemical particles, elements, compounds or mixtures
    • G16C20/10—Analysis or design of chemical reactions, syntheses or processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Computing Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2012538879A 2009-11-12 2010-11-09 フォトレジストシミュレーション Active JP5719850B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US26053309P 2009-11-12 2009-11-12
US61/260,533 2009-11-12
US12/915,455 US8589827B2 (en) 2009-11-12 2010-10-29 Photoresist simulation
US12/915,455 2010-10-29
PCT/US2010/055937 WO2011059947A2 (en) 2009-11-12 2010-11-09 Photoresist simulation

Publications (3)

Publication Number Publication Date
JP2013511152A JP2013511152A (ja) 2013-03-28
JP2013511152A5 JP2013511152A5 (https=) 2013-12-19
JP5719850B2 true JP5719850B2 (ja) 2015-05-20

Family

ID=43974826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012538879A Active JP5719850B2 (ja) 2009-11-12 2010-11-09 フォトレジストシミュレーション

Country Status (5)

Country Link
US (2) US8589827B2 (https=)
EP (1) EP2499661B1 (https=)
JP (1) JP5719850B2 (https=)
KR (1) KR101454522B1 (https=)
WO (1) WO2011059947A2 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8589827B2 (en) * 2009-11-12 2013-11-19 Kla-Tencor Corporation Photoresist simulation
NL2009982A (en) * 2012-01-10 2013-07-15 Asml Netherlands Bv Source mask optimization to reduce stochastic effects.
KR101362326B1 (ko) * 2012-08-06 2014-02-24 현대모비스 주식회사 주차 정렬 기능을 갖는 차량 후방 카메라 시스템 및 이를 이용한 차량의 주차 지원 시스템
TWI575566B (zh) 2014-02-24 2017-03-21 東京威力科創股份有限公司 與光敏化化學放大光阻化學品及程序一起使用的方法及技術
US10020195B2 (en) 2014-02-25 2018-07-10 Tokyo Electron Limited Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists
US9733576B2 (en) * 2014-03-17 2017-08-15 Kla-Tencor Corporation Model for accurate photoresist profile prediction
CN103887199B (zh) * 2014-03-20 2017-01-11 上海华力微电子有限公司 采用暗场硅片检测机台检测光阻损伤的方法
US10453748B2 (en) * 2015-08-27 2019-10-22 Micron Technology, Inc. Methods of forming semiconductor device structures including stair step structures
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
US10429745B2 (en) * 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
CN109313395B (zh) 2016-05-13 2021-05-14 东京毅力科创株式会社 通过使用光剂来进行的临界尺寸控制
WO2017197279A1 (en) 2016-05-13 2017-11-16 Tokyo Electron Limited Critical dimension control by use of photo-sensitized chemicals or photo-sensitized chemically amplified resist
US10795267B2 (en) 2016-12-02 2020-10-06 Asml Netherlands B.V. Model for estimating stochastic variation
FR3060752B1 (fr) * 2016-12-15 2019-05-10 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de mise en œuvre d'une technique de caracterisation cd-sem
US10474042B2 (en) * 2017-03-22 2019-11-12 Kla-Tencor Corporation Stochastically-aware metrology and fabrication
WO2018206275A1 (en) 2017-05-12 2018-11-15 Asml Netherlands B.V. Methods for evaluating resist development
US11493850B2 (en) 2019-07-23 2022-11-08 Samsung Electronics Co., Ltd. Lithography method using multi-scale simulation, semiconductor device manufacturing method and exposure equipment
KR102898764B1 (ko) 2019-08-16 2025-12-10 도쿄엘렉트론가부시키가이샤 확률 중심 결함 교정을 위한 방법 및 공정
JP7310466B2 (ja) * 2019-09-10 2023-07-19 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム評価方法
JP6741838B1 (ja) * 2019-09-11 2020-08-19 東京応化工業株式会社 情報処理システム、情報処理装置、情報処理方法及びプログラム
JP6832463B1 (ja) * 2020-04-06 2021-02-24 東京応化工業株式会社 情報処理システム、情報処理装置、情報処理方法及びプログラム
TWI877374B (zh) * 2020-06-05 2025-03-21 美商新思科技股份有限公司 校正在精簡模型中的隨機訊號的方法及系統
KR20220149823A (ko) * 2021-04-30 2022-11-09 삼성전자주식회사 멀티-스케일 시뮬레이션을 이용한 리소그라피 방법, 및 그 리소그라피 방법을 기반으로 한 반도체 소자 제조방법 및 노광 설비
CN114488705B (zh) * 2022-01-13 2026-02-27 东方晶源微电子科技(北京)股份有限公司 一种负向显影光刻胶模型优化方法
CN115831240B (zh) * 2022-12-08 2025-10-14 广东省大湾区集成电路与系统应用研究院 建模方法、装置、计算机可读存储介质以及处理器
WO2026006407A1 (en) * 2024-06-26 2026-01-02 Lam Research Corporation Defect reduction strategies using mechanical learnings from mechanical simulation

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6078738A (en) 1997-05-08 2000-06-20 Lsi Logic Corporation Comparing aerial image to SEM of photoresist or substrate pattern for masking process characterization
JP2971434B2 (ja) * 1998-03-19 1999-11-08 株式会社東芝 化学増幅型レジスト及びその製造方法、並びにパターン形成方法及び露光シミュレーション方法
JP3564298B2 (ja) 1998-06-18 2004-09-08 株式会社東芝 計算機を用いたパターン評価方法およびパターン生成方法
JP2001135567A (ja) * 1999-11-08 2001-05-18 Semiconductor Leading Edge Technologies Inc レジストパターン形状のシミュレーション装置、シミュレーション方法および記録媒体
JP2002006498A (ja) * 2000-06-27 2002-01-09 Shin Etsu Chem Co Ltd 化学増幅レジスト材料における特性予測方法
JP2002287360A (ja) * 2001-03-27 2002-10-03 Sony Corp 感光性組成物の設計方法およびリソグラフィ方法
JP2003068625A (ja) * 2001-08-29 2003-03-07 Nikon Corp レジストパターン形状のシミュレーション方法
KR20050065164A (ko) * 2003-12-24 2005-06-29 주식회사 하이닉스반도체 포토레지스트 패턴의 사이드 프로파일 검사방법
US7025280B2 (en) 2004-01-30 2006-04-11 Tokyo Electron Limited Adaptive real time control of a reticle/mask system
JP2007523373A (ja) * 2004-02-23 2007-08-16 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 画像システムにおける画像ぼけ部の決定
US7116411B2 (en) * 2004-08-26 2006-10-03 Asml Masktools B.V. Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems
KR20060103972A (ko) * 2005-03-29 2006-10-09 삼성전자주식회사 미세구조물의 프로파일 검사 방법
US7378202B2 (en) 2006-02-21 2008-05-27 Mentor Graphics Corporation Grid-based resist simulation
JP2008091721A (ja) * 2006-10-03 2008-04-17 Toshiba Corp レジストパターン予測システム、レジストパターン予測方法、及びマスクパターン補正方法
US7949618B2 (en) 2007-03-28 2011-05-24 Tokyo Electron Limited Training a machine learning system to determine photoresist parameters
WO2010046408A2 (en) * 2008-10-22 2010-04-29 Micronic Laser Systems Ab Method of iterative compensation for non-linear effects in three-dimensional exposure of resist
US8589827B2 (en) * 2009-11-12 2013-11-19 Kla-Tencor Corporation Photoresist simulation
US8336003B2 (en) * 2010-02-19 2012-12-18 International Business Machines Corporation Method for designing optical lithography masks for directed self-assembly
US8108805B2 (en) * 2010-03-26 2012-01-31 Tokyo Electron Limited Simplified micro-bridging and roughness analysis

Also Published As

Publication number Publication date
KR20120085841A (ko) 2012-08-01
US20140067346A1 (en) 2014-03-06
US20110112809A1 (en) 2011-05-12
WO2011059947A3 (en) 2011-10-13
EP2499661A2 (en) 2012-09-19
KR101454522B1 (ko) 2014-10-24
EP2499661B1 (en) 2018-08-08
US8589827B2 (en) 2013-11-19
EP2499661A4 (en) 2014-03-05
JP2013511152A (ja) 2013-03-28
WO2011059947A2 (en) 2011-05-19
US9679116B2 (en) 2017-06-13

Similar Documents

Publication Publication Date Title
JP5719850B2 (ja) フォトレジストシミュレーション
CN1087099C (zh) 用于光刻工艺的模拟方法
TWI823616B (zh) 執行用於訓練機器學習模型以產生特性圖案之方法的非暫時性電腦可讀媒體
US8279409B1 (en) System and method for calibrating a lithography model
US11415897B2 (en) Calibrating stochastic signals in compact modeling
TWI657347B (zh) 光敏化化學放大光阻之模擬
Fukuda Localized and cascading secondary electron generation as causes of stochastic defects in extreme ultraviolet projection lithography
Santaclara et al. One metric to rule them all: new k4 definition for photoresist characterization
Gao et al. Calibration and verification of a stochastic model for EUV resist
US12072637B2 (en) Lithography method using multi-scale simulation, semiconductor device manufacturing method and exposure equipment
US11468222B2 (en) Stochastic signal prediction in compact modeling
Bunday et al. Photoresist shrinkage effects in 16 nm node extreme ultraviolet (EUV) photoresist targets
Wei et al. Calibration and application of Gaussian random field models for exposure and resist stochastic in EUV lithography
Schnattinger et al. A comprehensive resist model for the prediction of line-edge roughness material and process dependencies in optical lithography
Chunder et al. Systematic assessment of the contributors of line edge roughness in EUV lithography using simulations
Tsikrikas et al. Stochastic simulation of material and process effects on the Patterning of complex layouts
US11662665B2 (en) Lithography method using multiscale simulation, and method of manufacturing semiconductor device and exposure equipment based on the lithography method
Lawson et al. Three-dimensional mesoscale model for the simulation of LER in photoresists
Gronheid et al. EUV secondary electron blur at the 22nm half pitch node
KR102845464B1 (ko) 멀티-스케일 시뮬레이션을 이용한 리소그라피 방법, 및 그 리소그라피 방법을 기반으로 한 반도체 소자 제조방법 및 노광 설비
D'Silva Modelling nanomechanical effects in advanced lithographic materials and processes
Drygiannakis et al. Simulation of the combined effects of polymer size, acid diffusion length, and EUV secondary electron blur on resist line-edge roughness
JP2025141838A (ja) 情報処理装置、情報処理方法、及びプログラム
Patsis et al. Simulation of material and processing effects on photoresist line-edge roughness
Chen et al. Direct-scatterometry-enabled optical-proximity-correction-model calibration

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131031

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131031

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140729

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140730

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20141027

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20141104

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150128

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150224

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150323

R150 Certificate of patent or registration of utility model

Ref document number: 5719850

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250