JP2013511152A5 - - Google Patents

Download PDF

Info

Publication number
JP2013511152A5
JP2013511152A5 JP2012538879A JP2012538879A JP2013511152A5 JP 2013511152 A5 JP2013511152 A5 JP 2013511152A5 JP 2012538879 A JP2012538879 A JP 2012538879A JP 2012538879 A JP2012538879 A JP 2012538879A JP 2013511152 A5 JP2013511152 A5 JP 2013511152A5
Authority
JP
Japan
Prior art keywords
photoresist
virtual
acid
determining
simulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012538879A
Other languages
English (en)
Japanese (ja)
Other versions
JP5719850B2 (ja
JP2013511152A (ja
Filing date
Publication date
Priority claimed from US12/915,455 external-priority patent/US8589827B2/en
Application filed filed Critical
Publication of JP2013511152A publication Critical patent/JP2013511152A/ja
Publication of JP2013511152A5 publication Critical patent/JP2013511152A5/ja
Application granted granted Critical
Publication of JP5719850B2 publication Critical patent/JP5719850B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2012538879A 2009-11-12 2010-11-09 フォトレジストシミュレーション Active JP5719850B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US26053309P 2009-11-12 2009-11-12
US61/260,533 2009-11-12
US12/915,455 US8589827B2 (en) 2009-11-12 2010-10-29 Photoresist simulation
US12/915,455 2010-10-29
PCT/US2010/055937 WO2011059947A2 (en) 2009-11-12 2010-11-09 Photoresist simulation

Publications (3)

Publication Number Publication Date
JP2013511152A JP2013511152A (ja) 2013-03-28
JP2013511152A5 true JP2013511152A5 (enExample) 2013-12-19
JP5719850B2 JP5719850B2 (ja) 2015-05-20

Family

ID=43974826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012538879A Active JP5719850B2 (ja) 2009-11-12 2010-11-09 フォトレジストシミュレーション

Country Status (5)

Country Link
US (2) US8589827B2 (enExample)
EP (1) EP2499661B1 (enExample)
JP (1) JP5719850B2 (enExample)
KR (1) KR101454522B1 (enExample)
WO (1) WO2011059947A2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8589827B2 (en) * 2009-11-12 2013-11-19 Kla-Tencor Corporation Photoresist simulation
NL2009982A (en) * 2012-01-10 2013-07-15 Asml Netherlands Bv Source mask optimization to reduce stochastic effects.
KR101362326B1 (ko) * 2012-08-06 2014-02-24 현대모비스 주식회사 주차 정렬 기능을 갖는 차량 후방 카메라 시스템 및 이를 이용한 차량의 주차 지원 시스템
TWI575566B (zh) 2014-02-24 2017-03-21 東京威力科創股份有限公司 與光敏化化學放大光阻化學品及程序一起使用的方法及技術
JP6895600B2 (ja) 2014-02-25 2021-06-30 東京エレクトロン株式会社 現像可能な底部反射防止コーティングおよび着色インプラントレジストのための化学増幅方法および技術
US9733576B2 (en) * 2014-03-17 2017-08-15 Kla-Tencor Corporation Model for accurate photoresist profile prediction
CN103887199B (zh) * 2014-03-20 2017-01-11 上海华力微电子有限公司 采用暗场硅片检测机台检测光阻损伤的方法
US10453748B2 (en) * 2015-08-27 2019-10-22 Micron Technology, Inc. Methods of forming semiconductor device structures including stair step structures
US10429745B2 (en) * 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
TWI657314B (zh) 2016-05-13 2019-04-21 東京威力科創股份有限公司 藉由使用光敏化學品或光敏化學增幅型光阻劑之臨界尺寸控制
WO2017197288A1 (en) 2016-05-13 2017-11-16 Tokyo Electron Limited Critical dimension control by use of a photo agent
CN110050230B (zh) 2016-12-02 2021-06-11 Asml荷兰有限公司 用于估计随机变量的模型
FR3060752B1 (fr) * 2016-12-15 2019-05-10 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de mise en œuvre d'une technique de caracterisation cd-sem
US10474042B2 (en) * 2017-03-22 2019-11-12 Kla-Tencor Corporation Stochastically-aware metrology and fabrication
WO2018206275A1 (en) 2017-05-12 2018-11-15 Asml Netherlands B.V. Methods for evaluating resist development
US11493850B2 (en) 2019-07-23 2022-11-08 Samsung Electronics Co., Ltd. Lithography method using multi-scale simulation, semiconductor device manufacturing method and exposure equipment
WO2021034567A1 (en) 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing
JP7310466B2 (ja) * 2019-09-10 2023-07-19 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム評価方法
JP6741838B1 (ja) * 2019-09-11 2020-08-19 東京応化工業株式会社 情報処理システム、情報処理装置、情報処理方法及びプログラム
JP6832463B1 (ja) * 2020-04-06 2021-02-24 東京応化工業株式会社 情報処理システム、情報処理装置、情報処理方法及びプログラム
TWI877374B (zh) * 2020-06-05 2025-03-21 美商新思科技股份有限公司 校正在精簡模型中的隨機訊號的方法及系統
KR20220149823A (ko) * 2021-04-30 2022-11-09 삼성전자주식회사 멀티-스케일 시뮬레이션을 이용한 리소그라피 방법, 및 그 리소그라피 방법을 기반으로 한 반도체 소자 제조방법 및 노광 설비
CN114488705A (zh) * 2022-01-13 2022-05-13 东方晶源微电子科技（北京）有限公司 一种负向显影光刻胶模型优化方法
CN115831240B (zh) * 2022-12-08 2025-10-14 广东省大湾区集成电路与系统应用研究院 建模方法、装置、计算机可读存储介质以及处理器

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6078738A (en) 1997-05-08 2000-06-20 Lsi Logic Corporation Comparing aerial image to SEM of photoresist or substrate pattern for masking process characterization
JP2971434B2 (ja) * 1998-03-19 1999-11-08 株式会社東芝 化学増幅型レジスト及びその製造方法、並びにパターン形成方法及び露光シミュレーション方法
JP3564298B2 (ja) 1998-06-18 2004-09-08 株式会社東芝 計算機を用いたパターン評価方法およびパターン生成方法
JP2001135567A (ja) * 1999-11-08 2001-05-18 Semiconductor Leading Edge Technologies Inc レジストパターン形状のシミュレーション装置、シミュレーション方法および記録媒体
JP2002006498A (ja) * 2000-06-27 2002-01-09 Shin Etsu Chem Co Ltd 化学増幅レジスト材料における特性予測方法
JP2002287360A (ja) * 2001-03-27 2002-10-03 Sony Corp 感光性組成物の設計方法およびリソグラフィ方法
JP2003068625A (ja) * 2001-08-29 2003-03-07 Nikon Corp レジストパターン形状のシミュレーション方法
KR20050065164A (ko) * 2003-12-24 2005-06-29 주식회사 하이닉스반도체 포토레지스트 패턴의 사이드 프로파일 검사방법
US7025280B2 (en) 2004-01-30 2006-04-11 Tokyo Electron Limited Adaptive real time control of a reticle/mask system
EP1721216A2 (en) * 2004-02-23 2006-11-15 Koninklijke Philips Electronics N.V. Determining image blur in an imaging system
US7116411B2 (en) * 2004-08-26 2006-10-03 Asml Masktools B.V. Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems
KR20060103972A (ko) * 2005-03-29 2006-10-09 삼성전자주식회사 미세구조물의 프로파일 검사 방법
US7378202B2 (en) 2006-02-21 2008-05-27 Mentor Graphics Corporation Grid-based resist simulation
JP2008091721A (ja) * 2006-10-03 2008-04-17 Toshiba Corp レジストパターン予測システム、レジストパターン予測方法、及びマスクパターン補正方法
US7949618B2 (en) 2007-03-28 2011-05-24 Tokyo Electron Limited Training a machine learning system to determine photoresist parameters
WO2010046407A2 (en) * 2008-10-22 2010-04-29 Micronic Laser Systems Ab Multi-focus method of enhanced three-dimensional exposure of resist
US8589827B2 (en) * 2009-11-12 2013-11-19 Kla-Tencor Corporation Photoresist simulation
US8336003B2 (en) * 2010-02-19 2012-12-18 International Business Machines Corporation Method for designing optical lithography masks for directed self-assembly
US8108805B2 (en) * 2010-03-26 2012-01-31 Tokyo Electron Limited Simplified micro-bridging and roughness analysis

Similar Documents

Publication Publication Date Title
JP2013511152A5 (enExample)
Merzari et al. Large-scale large eddy simulation of nuclear reactor flows: Issues and perspectives
Scarth et al. Random field simulation over curved surfaces: Applications to computational structural mechanics
JP2021512387A5 (enExample)
JP5441422B2 (ja) シミュレーション方法及びプログラム
CN107729621B (zh) 一种静力学模型的验证工具
CN109614638B (zh) 一种非直接建模的城市风环境cfd模拟方法
TWI421703B (zh) 模擬技術（一）
Domino Design-order, non-conformal low-Mach fluid algorithms using a hybrid CVFEM/DG approach
ITTO20130575A1 (it) Procedimento per la progettazione automatica di un circuito elettronico, relativo sistema e prodotto informatico
JP2009193339A (ja) 不均質材料モデルの作成方法、この方法を用いた不均質材料のシミュレーション方法、不均質材料モデルの作成装置及び不均質材料のシミュレーション装置
CN110096758B (zh) 一种枢纽工程泄洪消能工参数化动态设计方法
Dhanush et al. Implementation of the virtual element method for coupled thermo-elasticity in Abaqus
CN117828788A (zh) 电力设备的数字孪生模型构建方法、装置和计算机设备
Pan et al. A gas‐kinetic scheme for the simulation of turbulent flows on unstructured meshes
Ala et al. A marching-on in time meshless kernel based solver for full-wave electromagnetic simulation
CN107016192B (zh) 焊接数值模拟中动态生死单元的有限元建模方法
Fang et al. Modelling coastal water waves using a depth-integrated, non-hydrostatic model with shock-capturing ability
KR101807585B1 (ko) 유한요소 해석을 이용한 설계 자동화 장치 및 방법
CN105404751B (zh) 基于热-力-电磁场网络统一的实现方法
CN103984094B (zh) 一种光学系统热性能仿真方法
TWI824233B (zh) 具有漏電流中的統計變化之動態隨機存取記憶體通路電晶體的設計
Wang et al. Quantitative Representation of Aleatoric Uncertainties in Network-Like Topological Structural Systems
JP6342213B2 (ja) 絶縁距離チェック装置
Hu et al. Performance of the fractional step method with various temporal discretization and adaptive time step size schemes for pulsating ventilation