JP5719850B2 - フォトレジストシミュレーション - Google Patents

フォトレジストシミュレーション Download PDF

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Publication number
JP5719850B2
JP5719850B2 JP2012538879A JP2012538879A JP5719850B2 JP 5719850 B2 JP5719850 B2 JP 5719850B2 JP 2012538879 A JP2012538879 A JP 2012538879A JP 2012538879 A JP2012538879 A JP 2012538879A JP 5719850 B2 JP5719850 B2 JP 5719850B2
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Japan
Prior art keywords
photoresist
acid
virtual
determining
volume
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English (en)
Japanese (ja)
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JP2013511152A (ja
JP2013511152A5 (enExample
Inventor
ビアフォア・ジョン・ジェイ
スミス・マーク・ディー
グレーブス・ジョン・エス
ブランケンシップ・デビッド
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KLA Corp
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KLA Tencor Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
    • G16C—COMPUTATIONAL CHEMISTRY; CHEMOINFORMATICS; COMPUTATIONAL MATERIALS SCIENCE
    • G16C20/00—Chemoinformatics, i.e. ICT specially adapted for the handling of physicochemical or structural data of chemical particles, elements, compounds or mixtures
    • G16C20/10—Analysis or design of chemical reactions, syntheses or processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Computing Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2012538879A 2009-11-12 2010-11-09 フォトレジストシミュレーション Active JP5719850B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US26053309P 2009-11-12 2009-11-12
US61/260,533 2009-11-12
US12/915,455 US8589827B2 (en) 2009-11-12 2010-10-29 Photoresist simulation
US12/915,455 2010-10-29
PCT/US2010/055937 WO2011059947A2 (en) 2009-11-12 2010-11-09 Photoresist simulation

Publications (3)

Publication Number Publication Date
JP2013511152A JP2013511152A (ja) 2013-03-28
JP2013511152A5 JP2013511152A5 (enExample) 2013-12-19
JP5719850B2 true JP5719850B2 (ja) 2015-05-20

Family

ID=43974826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012538879A Active JP5719850B2 (ja) 2009-11-12 2010-11-09 フォトレジストシミュレーション

Country Status (5)

Country Link
US (2) US8589827B2 (enExample)
EP (1) EP2499661B1 (enExample)
JP (1) JP5719850B2 (enExample)
KR (1) KR101454522B1 (enExample)
WO (1) WO2011059947A2 (enExample)

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KR101362326B1 (ko) * 2012-08-06 2014-02-24 현대모비스 주식회사 주차 정렬 기능을 갖는 차량 후방 카메라 시스템 및 이를 이용한 차량의 주차 지원 시스템
TWI575566B (zh) 2014-02-24 2017-03-21 東京威力科創股份有限公司 與光敏化化學放大光阻化學品及程序一起使用的方法及技術
JP6895600B2 (ja) 2014-02-25 2021-06-30 東京エレクトロン株式会社 現像可能な底部反射防止コーティングおよび着色インプラントレジストのための化学増幅方法および技術
US9733576B2 (en) * 2014-03-17 2017-08-15 Kla-Tencor Corporation Model for accurate photoresist profile prediction
CN103887199B (zh) * 2014-03-20 2017-01-11 上海华力微电子有限公司 采用暗场硅片检测机台检测光阻损伤的方法
US10453748B2 (en) * 2015-08-27 2019-10-22 Micron Technology, Inc. Methods of forming semiconductor device structures including stair step structures
US10429745B2 (en) * 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
TWI657314B (zh) 2016-05-13 2019-04-21 東京威力科創股份有限公司 藉由使用光敏化學品或光敏化學增幅型光阻劑之臨界尺寸控制
WO2017197288A1 (en) 2016-05-13 2017-11-16 Tokyo Electron Limited Critical dimension control by use of a photo agent
CN110050230B (zh) 2016-12-02 2021-06-11 Asml荷兰有限公司 用于估计随机变量的模型
FR3060752B1 (fr) * 2016-12-15 2019-05-10 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de mise en œuvre d'une technique de caracterisation cd-sem
US10474042B2 (en) * 2017-03-22 2019-11-12 Kla-Tencor Corporation Stochastically-aware metrology and fabrication
WO2018206275A1 (en) 2017-05-12 2018-11-15 Asml Netherlands B.V. Methods for evaluating resist development
US11493850B2 (en) 2019-07-23 2022-11-08 Samsung Electronics Co., Ltd. Lithography method using multi-scale simulation, semiconductor device manufacturing method and exposure equipment
WO2021034567A1 (en) 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing
JP7310466B2 (ja) * 2019-09-10 2023-07-19 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム評価方法
JP6741838B1 (ja) * 2019-09-11 2020-08-19 東京応化工業株式会社 情報処理システム、情報処理装置、情報処理方法及びプログラム
JP6832463B1 (ja) * 2020-04-06 2021-02-24 東京応化工業株式会社 情報処理システム、情報処理装置、情報処理方法及びプログラム
TWI877374B (zh) * 2020-06-05 2025-03-21 美商新思科技股份有限公司 校正在精簡模型中的隨機訊號的方法及系統
KR20220149823A (ko) * 2021-04-30 2022-11-09 삼성전자주식회사 멀티-스케일 시뮬레이션을 이용한 리소그라피 방법, 및 그 리소그라피 방법을 기반으로 한 반도체 소자 제조방법 및 노광 설비
CN114488705A (zh) * 2022-01-13 2022-05-13 东方晶源微电子科技（北京）有限公司 一种负向显影光刻胶模型优化方法
CN115831240B (zh) * 2022-12-08 2025-10-14 广东省大湾区集成电路与系统应用研究院 建模方法、装置、计算机可读存储介质以及处理器

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JP2971434B2 (ja) * 1998-03-19 1999-11-08 株式会社東芝 化学増幅型レジスト及びその製造方法、並びにパターン形成方法及び露光シミュレーション方法
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JP2002287360A (ja) * 2001-03-27 2002-10-03 Sony Corp 感光性組成物の設計方法およびリソグラフィ方法
JP2003068625A (ja) * 2001-08-29 2003-03-07 Nikon Corp レジストパターン形状のシミュレーション方法
KR20050065164A (ko) * 2003-12-24 2005-06-29 주식회사 하이닉스반도체 포토레지스트 패턴의 사이드 프로파일 검사방법
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JP2008091721A (ja) * 2006-10-03 2008-04-17 Toshiba Corp レジストパターン予測システム、レジストパターン予測方法、及びマスクパターン補正方法
US7949618B2 (en) 2007-03-28 2011-05-24 Tokyo Electron Limited Training a machine learning system to determine photoresist parameters
WO2010046407A2 (en) * 2008-10-22 2010-04-29 Micronic Laser Systems Ab Multi-focus method of enhanced three-dimensional exposure of resist
US8589827B2 (en) * 2009-11-12 2013-11-19 Kla-Tencor Corporation Photoresist simulation
US8336003B2 (en) * 2010-02-19 2012-12-18 International Business Machines Corporation Method for designing optical lithography masks for directed self-assembly
US8108805B2 (en) * 2010-03-26 2012-01-31 Tokyo Electron Limited Simplified micro-bridging and roughness analysis

Also Published As

Publication number Publication date
EP2499661A4 (en) 2014-03-05
US8589827B2 (en) 2013-11-19
WO2011059947A2 (en) 2011-05-19
WO2011059947A3 (en) 2011-10-13
JP2013511152A (ja) 2013-03-28
US20140067346A1 (en) 2014-03-06
EP2499661A2 (en) 2012-09-19
KR101454522B1 (ko) 2014-10-24
EP2499661B1 (en) 2018-08-08
KR20120085841A (ko) 2012-08-01
US9679116B2 (en) 2017-06-13
US20110112809A1 (en) 2011-05-12

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