KR101454522B1 - 포토레지스트 시뮬레이션 - Google Patents

포토레지스트 시뮬레이션 Download PDF

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KR101454522B1
KR101454522B1 KR1020127013240A KR20127013240A KR101454522B1 KR 101454522 B1 KR101454522 B1 KR 101454522B1 KR 1020127013240 A KR1020127013240 A KR 1020127013240A KR 20127013240 A KR20127013240 A KR 20127013240A KR 101454522 B1 KR101454522 B1 KR 101454522B1
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photoresist
determining
acid
simulated
virtual
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KR20120085841A (ko
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존 제이 비아포레
마크 디 스미스
존 에스 그레이브스
데이비드 블랑켄십
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케이엘에이-텐코 코포레이션
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    • G—PHYSICS
    • G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
    • G16C—COMPUTATIONAL CHEMISTRY; CHEMOINFORMATICS; COMPUTATIONAL MATERIALS SCIENCE
    • G16C20/00—Chemoinformatics, i.e. ICT specially adapted for the handling of physicochemical or structural data of chemical particles, elements, compounds or mixtures
    • G16C20/10—Analysis or design of chemical reactions, syntheses or processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Computing Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020127013240A 2009-11-12 2010-11-09 포토레지스트 시뮬레이션 Active KR101454522B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US26053309P 2009-11-12 2009-11-12
US61/260,533 2009-11-12
US12/915,455 US8589827B2 (en) 2009-11-12 2010-10-29 Photoresist simulation
US12/915,455 2010-10-29
PCT/US2010/055937 WO2011059947A2 (en) 2009-11-12 2010-11-09 Photoresist simulation

Publications (2)

Publication Number Publication Date
KR20120085841A KR20120085841A (ko) 2012-08-01
KR101454522B1 true KR101454522B1 (ko) 2014-10-24

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US (2) US8589827B2 (enExample)
EP (1) EP2499661B1 (enExample)
JP (1) JP5719850B2 (enExample)
KR (1) KR101454522B1 (enExample)
WO (1) WO2011059947A2 (enExample)

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TWI575566B (zh) 2014-02-24 2017-03-21 東京威力科創股份有限公司 與光敏化化學放大光阻化學品及程序一起使用的方法及技術
JP6895600B2 (ja) 2014-02-25 2021-06-30 東京エレクトロン株式会社 現像可能な底部反射防止コーティングおよび着色インプラントレジストのための化学増幅方法および技術
US9733576B2 (en) * 2014-03-17 2017-08-15 Kla-Tencor Corporation Model for accurate photoresist profile prediction
CN103887199B (zh) * 2014-03-20 2017-01-11 上海华力微电子有限公司 采用暗场硅片检测机台检测光阻损伤的方法
US10453748B2 (en) * 2015-08-27 2019-10-22 Micron Technology, Inc. Methods of forming semiconductor device structures including stair step structures
US10429745B2 (en) * 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
TWI657314B (zh) 2016-05-13 2019-04-21 東京威力科創股份有限公司 藉由使用光敏化學品或光敏化學增幅型光阻劑之臨界尺寸控制
WO2017197288A1 (en) 2016-05-13 2017-11-16 Tokyo Electron Limited Critical dimension control by use of a photo agent
CN110050230B (zh) 2016-12-02 2021-06-11 Asml荷兰有限公司 用于估计随机变量的模型
FR3060752B1 (fr) * 2016-12-15 2019-05-10 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de mise en œuvre d'une technique de caracterisation cd-sem
US10474042B2 (en) * 2017-03-22 2019-11-12 Kla-Tencor Corporation Stochastically-aware metrology and fabrication
WO2018206275A1 (en) 2017-05-12 2018-11-15 Asml Netherlands B.V. Methods for evaluating resist development
US11493850B2 (en) 2019-07-23 2022-11-08 Samsung Electronics Co., Ltd. Lithography method using multi-scale simulation, semiconductor device manufacturing method and exposure equipment
WO2021034567A1 (en) 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing
JP7310466B2 (ja) * 2019-09-10 2023-07-19 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム評価方法
JP6741838B1 (ja) * 2019-09-11 2020-08-19 東京応化工業株式会社 情報処理システム、情報処理装置、情報処理方法及びプログラム
JP6832463B1 (ja) * 2020-04-06 2021-02-24 東京応化工業株式会社 情報処理システム、情報処理装置、情報処理方法及びプログラム
TWI877374B (zh) * 2020-06-05 2025-03-21 美商新思科技股份有限公司 校正在精簡模型中的隨機訊號的方法及系統
KR20220149823A (ko) * 2021-04-30 2022-11-09 삼성전자주식회사 멀티-스케일 시뮬레이션을 이용한 리소그라피 방법, 및 그 리소그라피 방법을 기반으로 한 반도체 소자 제조방법 및 노광 설비
CN114488705A (zh) * 2022-01-13 2022-05-13 东方晶源微电子科技（北京）有限公司 一种负向显影光刻胶模型优化方法
CN115831240B (zh) * 2022-12-08 2025-10-14 广东省大湾区集成电路与系统应用研究院 建模方法、装置、计算机可读存储介质以及处理器

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Also Published As

Publication number Publication date
EP2499661A4 (en) 2014-03-05
US8589827B2 (en) 2013-11-19
WO2011059947A2 (en) 2011-05-19
JP5719850B2 (ja) 2015-05-20
WO2011059947A3 (en) 2011-10-13
JP2013511152A (ja) 2013-03-28
US20140067346A1 (en) 2014-03-06
EP2499661A2 (en) 2012-09-19
EP2499661B1 (en) 2018-08-08
KR20120085841A (ko) 2012-08-01
US9679116B2 (en) 2017-06-13
US20110112809A1 (en) 2011-05-12

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