JP2013258368A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2013258368A JP2013258368A JP2012134913A JP2012134913A JP2013258368A JP 2013258368 A JP2013258368 A JP 2013258368A JP 2012134913 A JP2012134913 A JP 2012134913A JP 2012134913 A JP2012134913 A JP 2012134913A JP 2013258368 A JP2013258368 A JP 2013258368A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 133
- 230000004888 barrier function Effects 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 abstract description 67
- 239000002184 metal Substances 0.000 abstract description 67
- 238000004519 manufacturing process Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 12
- 239000010931 gold Substances 0.000 description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 11
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28581—Deposition of Schottky electrodes
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
【解決手段】実施形態に係る半導体装置50は、脚部56aおよび庇部56bからなるT字状のゲート電極56を有する。このゲート電極56の脚部56aの底面には、バリア層58が設けられている。そして、脚部56aの底面に設けられたバリア層58の下面には、このバリア層58の電極幅W1より広い電極幅W2を有するショットキ金属層57が、半導体層12とショットキ接合するように設けられている。
【選択図】図16
Description
図1は、第1の実施形態に係る半導体装置を示す断面図である。図1に示すように、第1の実施形態に係る半導体装置10において、半導体基板11上には、電子走行層12a、電子供給層12bがこの順に積層された半導体層12が設けられている。そして、半導体層12のうち、電子供給層12bの表面には、凹状のリセス部13が設けられている。
図15は、第2の実施形態に係る半導体装置を示す断面図である。図15に示すように、第2の実施形態に係る半導体装置50は、第1の実施形態に係る半導体装置10と比較して、ゲート電極56が異なっており、他の構成は同一である。従って、以下の第2の実施形態に係る半導体装置50の説明において、第1の実施形態に係る半導体装置10と同一部分については同一の符号を付すとともに、説明を省略する。
11・・・半導体基板
12、112・・・半導体層
12a・・・電子走行層
12b・・・電子供給層
13・・・リセス部
14・・・ドレイン電極
15・・・ソース電極
16、36、46、56、116・・・ゲート電極
16a、36a、46a、56a・・・脚部
16b、36b、46b、56b・・・庇部
17、37、47、57、117・・・ショットキ金属層
17a、47a・・・ショットキ金属層の上端部
18、58、118・・・バリア層
18a、38a、48a、58a、118a・・・流れ出したバリア層
19、59、119・・・低抵抗層
20・・・第1のレジスト層
21・・・第1の開口部
22・・・第2のレジスト層
23・・・第2の開口部
100・・・金属層
Claims (2)
- 半導体基板と、
この半導体基板上に設けられた半導体層と、
この半導体層の表面上において、互いに離間した位置に設けられ、それぞれが前記半導体層とオーミック接触するドレイン電極およびソース電極と、
脚部、およびこの脚部上に設けられた、前記脚部より電極幅が広い庇部、によって構成され、前記脚部の底面に設けられたバリア層、およびこのバリア層の下面に接するとともに前記半導体層とショットキ接合し、前記バリア層より広い電極幅を有するショットキ金属層、を有するT字状のゲート電極と、
を具備することを特徴とする半導体装置。 - 前記ショットキ接合層は、Tiからなることを特徴とする請求項1に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012134913A JP2013258368A (ja) | 2012-06-14 | 2012-06-14 | 半導体装置 |
US13/773,330 US8912084B2 (en) | 2012-06-14 | 2013-02-21 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012134913A JP2013258368A (ja) | 2012-06-14 | 2012-06-14 | 半導体装置 |
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JP2013258368A true JP2013258368A (ja) | 2013-12-26 |
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JP2012134913A Pending JP2013258368A (ja) | 2012-06-14 | 2012-06-14 | 半導体装置 |
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US (1) | US8912084B2 (ja) |
JP (1) | JP2013258368A (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109979991A (zh) * | 2019-04-16 | 2019-07-05 | 成都海威华芯科技有限公司 | 一种基于I-line和EBL制作T形栅的光刻工艺、T形栅和晶体管 |
CN111640795A (zh) * | 2020-04-28 | 2020-09-08 | 西安电子科技大学 | 一种具有弧形栅电极的氮化镓高频晶体管及制作方法 |
US11881506B2 (en) * | 2021-07-27 | 2024-01-23 | Globalfoundries U.S. Inc. | Gate structures with air gap isolation features |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01158779A (ja) * | 1987-12-15 | 1989-06-21 | Fujitsu Ltd | 半導体装置 |
JPH02122632A (ja) * | 1988-11-01 | 1990-05-10 | Mitsubishi Electric Corp | 電界効果トランジスタの製造方法 |
JPH02237113A (ja) * | 1989-03-10 | 1990-09-19 | Nippon Mining Co Ltd | 多層電極の形成方法 |
JPH0786310A (ja) * | 1993-09-20 | 1995-03-31 | Mitsubishi Electric Corp | 高融点金属ゲート電極の形成方法 |
JPH08172102A (ja) * | 1994-12-20 | 1996-07-02 | Murata Mfg Co Ltd | 半導体装置の製造方法 |
JPH09283621A (ja) * | 1996-04-10 | 1997-10-31 | Murata Mfg Co Ltd | 半導体装置のt型ゲート電極形成方法およびその構造 |
JP2005085961A (ja) * | 2003-09-08 | 2005-03-31 | Suntek Compound Semiconductor Co | 電界効果型トランジスタのゲート構造の形成方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04130619A (ja) * | 1990-09-20 | 1992-05-01 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
KR100211070B1 (ko) * | 1994-08-19 | 1999-07-15 | 아끼구사 나오유끼 | 반도체 장치 및 그 제조방법 |
JP3120754B2 (ja) * | 1997-05-29 | 2000-12-25 | 日本電気株式会社 | 半導体装置およびその製造方法 |
JP4751498B2 (ja) * | 2000-03-30 | 2011-08-17 | 富士通株式会社 | 半導体三端子装置 |
JP2002100639A (ja) | 2000-09-20 | 2002-04-05 | Ricoh Co Ltd | 半導体装置およびその製造方法 |
JP4093395B2 (ja) * | 2001-08-03 | 2008-06-04 | 富士通株式会社 | 半導体装置とその製造方法 |
JP4308277B2 (ja) * | 2007-02-07 | 2009-08-05 | ユーディナデバイス株式会社 | 電界効果トランジスタの製造方法 |
-
2012
- 2012-06-14 JP JP2012134913A patent/JP2013258368A/ja active Pending
-
2013
- 2013-02-21 US US13/773,330 patent/US8912084B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01158779A (ja) * | 1987-12-15 | 1989-06-21 | Fujitsu Ltd | 半導体装置 |
JPH02122632A (ja) * | 1988-11-01 | 1990-05-10 | Mitsubishi Electric Corp | 電界効果トランジスタの製造方法 |
JPH02237113A (ja) * | 1989-03-10 | 1990-09-19 | Nippon Mining Co Ltd | 多層電極の形成方法 |
JPH0786310A (ja) * | 1993-09-20 | 1995-03-31 | Mitsubishi Electric Corp | 高融点金属ゲート電極の形成方法 |
JPH08172102A (ja) * | 1994-12-20 | 1996-07-02 | Murata Mfg Co Ltd | 半導体装置の製造方法 |
JPH09283621A (ja) * | 1996-04-10 | 1997-10-31 | Murata Mfg Co Ltd | 半導体装置のt型ゲート電極形成方法およびその構造 |
JP2005085961A (ja) * | 2003-09-08 | 2005-03-31 | Suntek Compound Semiconductor Co | 電界効果型トランジスタのゲート構造の形成方法 |
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US20130334647A1 (en) | 2013-12-19 |
US8912084B2 (en) | 2014-12-16 |
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