JP2013223419A - 電力インバーター用のシステムオンチップ - Google Patents
電力インバーター用のシステムオンチップ Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
- H02M7/53875—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current with analogue control of three-phase output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Inverter Devices (AREA)
- Logic Circuits (AREA)
- Power Conversion In General (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】集積回路(IC)はIC上に一体となって形成された論理回路を備える。論理回路は、電力インバーターの電源スイッチを制御するための変調信号を発生するように構成されている。論理回路は、少なくとも一つの入力値にもとづいて、変調信号を発生する。ICは、さらに、IC上に一体となって形成された電圧レベルシフターを備える。電圧レベルシフターは、変調信号を、電力インバーターの電力スイッチを駆動するのに適した電圧レベルに変えるように構成されている。論理回路は、デジタル論理回路であり得、入力値はデジタル入力値であり得る。ICは、また、IC上に一体となって形成されたセンス回路を備えることが出来る。センス回路は、入力値を発生するように構成される。
【選択図】なし
Description
別段の言及がなければ、図中の同様の又は対応する構成要素は、同様の又は対応する参照数字によって示される。さらに、本出願における図面やさし絵は、一般に、一定の縮尺ではなく、実際の相対的寸法に対応させることを意図していない。
Claims (20)
- 集積回路(IC)上に一体となって形成された論理回路であって、電力インバーターの電源スイッチを制御するための変調信号を発生するように構成され、少なくとも一つの入力値に基づいた前記変調信号を発生する論理回路と、
前記IC上に一定となって形成された電圧レベルシフターであって、前記変調信号を、前記電力インバーターの前記電源スイッチを駆動するための最適な電圧レベルに変えるように構成された前記電圧レベルシフターと、を備える集積回路。 - 前記論理回路がデジタル論理回路を有する、請求項1に記載のIC。
- 前記入力値がデジタル入力値を有する、請求項1に記載のIC。
- 前記IC上に一体となって形成されたセンス回路を備え、該センス回路が前記入力値を発生するように構成される、請求項1に記載のIC。
- 前記入力値が前記電力インバーターの前記電源スイッチの検出値を含む、請求項1に記載のIC。
- 前記IC上に一体となって形成された電源を備え、該電源が前記論理回路及び前記電圧レベルシフターに電力を供給するように構成される、請求項1に記載のIC。
- 前記電源インバーターが三相電源インバーターである、請求項1に記載のIC。
- 前記ICはアナログ形式で前記入力値を受けるように構成される、請求項1に記載のIC。
- 前記ICは前記論理回路に前記入力値を与えるように構成される、アナログデジタル変換器を有する、請求項1に記載のIC。
- 前記入力値が、前記電力インバーターの前記電源スイッチの、電圧、電流、インピーダンス、及び温度の値の少なくとも1つを含む、請求項1に記載のIC。
- 前記ICは、前記電力インバーターの前記電源スイッチとともにマルチチップモジュール中にある、請求項1に記載のIC。
- 集積回路(IC)上に一定となって形成されたデジタル論理回路であって、電力インバーターの電源スイッチを制御するための変調信号を発生するように構成され、少なくとも一つのデジタル入力値に基づいた前記変調信号を発生するデジタル論理回路と、
前記IC上に一定となって形成された電圧レベルシフターであって、前記変調信号を、前記電力インバーターの前記電源スイッチを駆動するための最適な電圧レベルに変えるように構成された前記電圧レベルシフターと、を備える集積回路。 - 前記IC上に一体となって形成されたセンス回路を備え、該センス回路が前記デジタル入力値を発生するように構成される、請求項12に記載のIC。
- 前記IC上に一定となって形成された電源を備え、該電源が前記デジタル論理回路及び前記電圧レベルシフターに電力を供給するように構成される、請求項12に記載のIC。
- 前記デジタル入力値が前記電力インバーターの前記電源スイッチの検出値を含む、請求項12に記載のIC。
- 前記電源インバーターが三相電源インバーターである、請求項12に記載のIC。
- 前記ICがアナログ形式で前記デジタル入力値を受けるように構成される、請求項12に記載のIC。
- 前記ICは、前記デジタル論理回路に前記デジタル入力値を与えるように構成される、アナログデジタル変換器を有する、請求項12に記載のIC。
- 前記デジタル入力値が、前記電力インバーターの前記電源スイッチの、電圧、電流、インピーダンス、及び温度の値の少なくとも1つを含む、請求項12に記載のIC。
- 前記ICは、前記電力インバーターの前記電源スイッチとともにマルチチップモジュール中にある、請求項12に記載のIC。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261624556P | 2012-04-16 | 2012-04-16 | |
US61/624,556 | 2012-04-16 | ||
US13/794,124 US9000829B2 (en) | 2012-04-16 | 2013-03-11 | System on chip for power inverter |
US13/794,124 | 2013-03-11 |
Publications (2)
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JP2013223419A true JP2013223419A (ja) | 2013-10-28 |
JP6091292B2 JP6091292B2 (ja) | 2017-03-08 |
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JP2013074371A Active JP6091292B2 (ja) | 2012-04-16 | 2013-03-29 | 電力インバーター用のシステムオンチップ |
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US (2) | US9000829B2 (ja) |
EP (1) | EP2654192B1 (ja) |
JP (1) | JP6091292B2 (ja) |
KR (1) | KR101489748B1 (ja) |
Cited By (1)
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WO2017086054A1 (ja) * | 2015-11-17 | 2017-05-26 | 日本電産株式会社 | システムインパッケージおよびモータ駆動回路装置 |
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CN111740572B (zh) * | 2020-08-10 | 2021-01-08 | 深圳第三代半导体研究院 | 具有双环控制结构的峰值电流模式控制器和开关电源 |
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JP2002232280A (ja) * | 2001-02-06 | 2002-08-16 | Denso Corp | 負荷制御装置 |
JP2006286721A (ja) * | 2005-03-31 | 2006-10-19 | Toshiba Corp | 半導体集積回路 |
JP2007143336A (ja) * | 2005-11-21 | 2007-06-07 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
JP2008293206A (ja) * | 2007-05-23 | 2008-12-04 | Oki Electric Ind Co Ltd | 半導体集積回路装置 |
JP2009071329A (ja) * | 2008-12-15 | 2009-04-02 | Hitachi Ltd | 半導体素子駆動用集積回路及び電力変換装置 |
JP2009283543A (ja) * | 2008-05-20 | 2009-12-03 | Renesas Technology Corp | 半導体装置およびその製造方法 |
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2013
- 2013-03-11 US US13/794,124 patent/US9000829B2/en active Active
- 2013-03-28 KR KR20130033675A patent/KR101489748B1/ko active IP Right Grant
- 2013-03-28 EP EP13161780.5A patent/EP2654192B1/en active Active
- 2013-03-29 JP JP2013074371A patent/JP6091292B2/ja active Active
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2015
- 2015-03-31 US US14/674,195 patent/US9473043B2/en active Active
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JP2001327171A (ja) * | 2000-05-11 | 2001-11-22 | Fuji Electric Co Ltd | パワー半導体モジュールおよび高耐圧ic |
JP2002232280A (ja) * | 2001-02-06 | 2002-08-16 | Denso Corp | 負荷制御装置 |
JP2006286721A (ja) * | 2005-03-31 | 2006-10-19 | Toshiba Corp | 半導体集積回路 |
JP2007143336A (ja) * | 2005-11-21 | 2007-06-07 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
JP2008293206A (ja) * | 2007-05-23 | 2008-12-04 | Oki Electric Ind Co Ltd | 半導体集積回路装置 |
JP2009283543A (ja) * | 2008-05-20 | 2009-12-03 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2009071329A (ja) * | 2008-12-15 | 2009-04-02 | Hitachi Ltd | 半導体素子駆動用集積回路及び電力変換装置 |
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WO2017086054A1 (ja) * | 2015-11-17 | 2017-05-26 | 日本電産株式会社 | システムインパッケージおよびモータ駆動回路装置 |
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EP2654192A3 (en) | 2017-11-29 |
US9000829B2 (en) | 2015-04-07 |
KR101489748B1 (ko) | 2015-02-04 |
US20130271201A1 (en) | 2013-10-17 |
US20150207432A1 (en) | 2015-07-23 |
JP6091292B2 (ja) | 2017-03-08 |
US9473043B2 (en) | 2016-10-18 |
EP2654192A2 (en) | 2013-10-23 |
EP2654192B1 (en) | 2021-12-22 |
KR20130116798A (ko) | 2013-10-24 |
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