JP2013222812A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP2013222812A JP2013222812A JP2012093303A JP2012093303A JP2013222812A JP 2013222812 A JP2013222812 A JP 2013222812A JP 2012093303 A JP2012093303 A JP 2012093303A JP 2012093303 A JP2012093303 A JP 2012093303A JP 2013222812 A JP2013222812 A JP 2013222812A
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- semiconductor film
- film
- oxide
- channel length
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 200
- 238000000034 method Methods 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000002441 X-ray diffraction Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 72
- 238000010438 heat treatment Methods 0.000 claims description 43
- 239000011701 zinc Substances 0.000 claims description 38
- 239000013078 crystal Substances 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 28
- 230000015572 biosynthetic process Effects 0.000 claims description 27
- 229910044991 metal oxide Inorganic materials 0.000 claims description 18
- 150000004706 metal oxides Chemical class 0.000 claims description 18
- 238000004544 sputter deposition Methods 0.000 claims description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 13
- 229910001882 dioxygen Inorganic materials 0.000 claims description 13
- 238000012545 processing Methods 0.000 claims description 9
- 239000011787 zinc oxide Substances 0.000 claims description 7
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 4
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 4
- 229910003437 indium oxide Inorganic materials 0.000 claims description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 239000010408 film Substances 0.000 description 301
- 239000001301 oxygen Substances 0.000 description 37
- 229910052760 oxygen Inorganic materials 0.000 description 37
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 35
- 229910052739 hydrogen Inorganic materials 0.000 description 21
- 239000001257 hydrogen Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 16
- 239000012535 impurity Substances 0.000 description 15
- 239000002184 metal Substances 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 125000004429 atom Chemical group 0.000 description 12
- 230000001965 increasing effect Effects 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 239000010409 thin film Substances 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 229910052738 indium Inorganic materials 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 8
- 208000005156 Dehydration Diseases 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 230000018044 dehydration Effects 0.000 description 7
- 238000006297 dehydration reaction Methods 0.000 description 7
- 238000006356 dehydrogenation reaction Methods 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- -1 oxygen radicals Chemical class 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910020994 Sn-Zn Inorganic materials 0.000 description 2
- 229910009069 Sn—Zn Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000006213 oxygenation reaction Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910020868 Sn-Ga-Zn Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000001307 laser spectroscopy Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
【解決手段】ゲート電極304と、前記ゲート電極上に形成されたゲート絶縁膜306と、前記ゲート絶縁膜上に形成された酸化物半導体膜308と、前記酸化物半導体膜上に形成されたソース電極310a及びドレイン電極310bと、を具備し、前記酸化物半導体膜に形成されるチャネル長Lは1〜50μmであり、前記酸化物半導体膜をX線回折によって測定した回転角2θは31°近傍にピークを有することを特徴とする半導体装置である。
【選択図】図1
Description
また、本発明の一態様において、前記酸化物半導体膜は、結晶部を含み、
前記結晶部は、c軸が前記酸化物半導体膜の被形成面の法線ベクトルに平行な方向に揃うとよい。
また、前記チャネル長は5μm未満であるとよい。
また、前記酸化物半導体膜はIn−Ga−Zn系酸化物半導体膜であるとよい。
図1(A)は、本発明の一態様に係る半導体装置を示す平面図であり、図1(B)は、図1(A)に示すX1−Y1線に沿った断面図である。この半導体装置はボトムゲート構造(逆スタガ型構造ともいう)のトランジスタを有している。なお、図1(A)では、煩雑になることを避けるため、トランジスタの構成要素の一部(例えば、ゲート絶縁膜306など)を省略して図示している。
酸化物半導体膜308は、CAAC−OS(C Axis Aligned Crystalline Oxide Semiconductor)膜であることが好ましい。
未満、好ましくは1×1011/cm3未満、さらに好ましくは、1.45×1010/cm3未満となる。このような酸化物半導体膜を用いたトランジスタにおいて、例えば、室温(25℃)でのオフ電流(ここでは、単位チャネル幅(1μm)あたりの値)は、100zA(1zA(ゼプトアンペア)は1×10−21A)以下、好ましくは10zA以下、さらに好ましくは100yA(1yA(ヨクトアンペア)は1×10−24A)以下となる。このように、i型化(真性化)または実質的にi型化された酸化物半導体を用いることで、極めて優れたオフ電流特性のトランジスタとすることができる。
図1(B)に示した半導体装置の作製方法について説明する。
まず、基板302上に下地絶縁膜(図示せず)を形成する。
基板温度=室温(R.T.)、O2流量=200sccm(O2流量比=100%)
(試料2)
基板温度=室温(R.T.)、Ar/O2流量=100/100sccm(O2流量比=50%)
(試料3)
基板温度=室温(R.T.)、Ar/O2流量=180/20sccm(O2流量比=10%)
(試料4)
基板温度=100℃、O2流量=200sccm(O2流量比=100%)
(試料5)
基板温度=100℃、Ar/O2流量=60/140sccm(O2流量比=70%)
(試料6)
基板温度=100℃、Ar/O2流量=100/100sccm(O2流量比=50%)
(試料7)
基板温度=100℃、Ar/O2流量=140/60sccm(O2流量比=30%)
(試料8)
基板温度=100℃、Ar/O2流量=180/20sccm(O2流量比=10%)
(試料9)
基板温度=170℃、O2流量=200sccm(O2流量比=100%)
(試料10)
基板温度=170℃、Ar/O2流量=60/140sccm(O2流量比=70%)
(試料11)
基板温度=170℃、Ar/O2流量=100/100sccm(O2流量比=50%)
(試料12)
基板温度=170℃、Ar/O2流量=140/60sccm(O2流量比=30%)
(試料13)
基板温度=170℃、Ar/O2流量=180/20sccm(O2流量比=10%)
(試料14)
基板温度=200℃、O2流量=200sccm(O2流量比=100%)
(試料15)
基板温度=200℃、Ar/O2流量=60/140sccm(O2流量比=70%)
(試料16)
基板温度=200℃、Ar/O2流量=100/100sccm(O2流量比=50%)
(試料17)
基板温度=200℃、Ar/O2流量=140/60sccm(O2流量比=30%)
(試料18)
基板温度=200℃、Ar/O2流量=180/20sccm(O2流量比=10%)
基板温度=100℃、Ar/O2流量=90/10sccm(O2流量比=10%)
(条件B)
基板温度=100℃、Ar/O2流量=50/50sccm(O2流量比=50%)
(条件C)
基板温度=200℃、Ar/O2流量=90/10sccm(O2流量比=10%)
(条件D)
基板温度=200℃、Ar/O2流量=50/50sccm(O2流量比=50%)
304 ゲート電極
306 ゲート絶縁膜
308 酸化物半導体膜
310a ソース電極
310b ドレイン電極
312 層間絶縁膜
314 平坦化絶縁膜
Claims (15)
- ゲート電極と、酸化物半導体膜と、ソース電極及びドレイン電極と、を具備し、
前記酸化物半導体膜に形成されるチャネル長は1〜50μmであり、
前記酸化物半導体膜をX線回折によって測定した回転角2θは31°近傍にピークを有することを特徴とする半導体装置。 - ゲート電極と、
前記ゲート電極上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成された酸化物半導体膜と、
前記酸化物半導体膜上に形成されたソース電極及びドレイン電極と、
を具備し、
前記酸化物半導体膜に形成されるチャネル長は1〜50μmであり、
前記酸化物半導体膜をX線回折によって測定した回転角2θは31°近傍にピークを有することを特徴とする半導体装置。 - 請求項1または2において、
前記チャネル長は5μm未満であることを特徴とする半導体装置。 - 請求項1乃至3のいずれか一項において、
前記酸化物半導体膜のバンドギャップは3.1eV以上であることを特徴とする半導体装置。 - 請求項1乃至4のいずれか一項において、
前記酸化物半導体膜は、インジウム酸化物、亜鉛酸化物、ガリウム酸化物、及びスズ酸化物の群から選択された少なくとも一つの酸化物を含む膜であることを特徴とする半導体装置。 - 請求項1乃至5のいずれか一項において、
前記酸化物半導体膜はIn−Ga−Zn系酸化物半導体膜であることを特徴とする半導体装置。 - 請求項1乃至6のいずれか一項において、
前記酸化物半導体膜は、結晶部を含み、
前記結晶部は、c軸が前記酸化物半導体膜の被形成面の法線ベクトルに平行な方向に揃うことを特徴とする半導体装置。 - ゲート電極と、酸化物半導体膜と、ソース電極及びドレイン電極と、を具備し、
前記酸化物半導体膜に形成されるチャネル長は1〜50μmであり、
前記酸化物半導体膜は、結晶部を含み、
前記結晶部は、c軸が前記酸化物半導体膜の被形成面の法線ベクトルに平行な方向に揃うことを特徴とする半導体装置。 - 請求項8において、
前記チャネル長は5μm未満であることを特徴とする半導体装置。 - 請求項8または9において、
前記酸化物半導体膜はIn−Ga−Zn系酸化物半導体膜であることを特徴とする半導体装置。 - 基板上にゲート電極を形成し、
前記ゲート電極上にゲート絶縁膜を形成し、
前記基板を加熱し、酸素ガス及び希ガスを用いた条件で、金属酸化物ターゲットをスパッタリングすることにより、前記ゲート絶縁膜上に酸化物半導体膜を形成し、
前記酸化物半導体膜を加工することにより、前記ゲート絶縁膜上に活性層を形成し、
前記活性層上に、前記活性層のチャネル長が1〜50μmとなるようにソース電極及びドレイン電極を形成する半導体装置の製造方法であって、
前記条件は、前記基板の加熱温度が100℃以上で且つ前記酸素ガスの流量比が70%以上である条件、または、前記基板の加熱温度が170℃以上で且つ前記酸素ガスの流量比が30%以上である条件であり、
前記酸化物半導体膜をX線回折によって測定した回転角2θは31°近傍にピークを有することを特徴とする半導体装置の製造方法。 - 請求項11において、
前記酸化物半導体膜のバンドギャップは3.1eV以上であることを特徴とする半導体装置の製造方法。 - 請求項11または12において、
前記チャネル長は5μm未満であることを特徴とする半導体装置の製造方法。 - 請求項11乃至13のいずれか一項において、
前記金属酸化物ターゲットはIn−Ga−Zn系酸化物ターゲットであることを特徴とする半導体装置の製造方法。 - 請求項11乃至14のいずれか一項において、
前記酸化物半導体膜は、結晶部を含み、
前記結晶部は、c軸が前記酸化物半導体膜の被形成面の法線ベクトルに平行な方向に揃うことを特徴とする半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012093303A JP6143423B2 (ja) | 2012-04-16 | 2012-04-16 | 半導体装置の製造方法 |
US13/861,587 US9362411B2 (en) | 2012-04-16 | 2013-04-12 | Semiconductor device and manufacturing method thereof |
US15/168,291 US20160276489A1 (en) | 2012-04-16 | 2016-05-31 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012093303A JP6143423B2 (ja) | 2012-04-16 | 2012-04-16 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013222812A true JP2013222812A (ja) | 2013-10-28 |
JP6143423B2 JP6143423B2 (ja) | 2017-06-07 |
Family
ID=49324277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012093303A Active JP6143423B2 (ja) | 2012-04-16 | 2012-04-16 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US9362411B2 (ja) |
JP (1) | JP6143423B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6076615B2 (ja) * | 2012-04-27 | 2017-02-08 | 東京エレクトロン株式会社 | 不純物拡散方法、基板処理装置及び半導体装置の製造方法 |
TWI686874B (zh) | 2014-12-26 | 2020-03-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法 |
DE112016001033T5 (de) * | 2015-03-03 | 2017-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung, Verfahren zum Herstellen derselben oder Anzeigevorrichtung mit derselben |
US20200006570A1 (en) * | 2018-06-29 | 2020-01-02 | Intel Corporation | Contact structures for thin film transistor devices |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008117739A1 (ja) * | 2007-03-23 | 2008-10-02 | Idemitsu Kosan Co., Ltd. | 半導体デバイス、多結晶半導体薄膜、多結晶半導体薄膜の製造方法、電界効果型トランジスタ、及び、電界効果型トランジスタの製造方法 |
JP2011066070A (ja) * | 2009-09-15 | 2011-03-31 | Idemitsu Kosan Co Ltd | 多結晶薄膜、その成膜方法、及び薄膜トランジスタ |
JP2011105995A (ja) * | 2009-11-18 | 2011-06-02 | Idemitsu Kosan Co Ltd | In−Ga−Zn−O系スパッタリングターゲット |
JP2011139054A (ja) * | 2009-12-04 | 2011-07-14 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2011205089A (ja) * | 2010-03-05 | 2011-10-13 | Semiconductor Energy Lab Co Ltd | 酸化物半導体膜の作製方法、およびトランジスタの作製方法 |
JP2012048806A (ja) * | 2010-07-27 | 2012-03-08 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2012068629A (ja) * | 2010-08-27 | 2012-04-05 | Semiconductor Energy Lab Co Ltd | 発光表示装置の作製方法 |
Family Cites Families (119)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3926443A (en) * | 1974-03-05 | 1975-12-16 | Coors Porcelain Co | Composite seal ring and assembly |
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
EP0820644B1 (en) | 1995-08-03 | 2005-08-24 | Koninklijke Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
EP1443130B1 (en) | 2001-11-05 | 2011-09-28 | Japan Science and Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
CN102856390B (zh) | 2004-03-12 | 2015-11-25 | 独立行政法人科学技术振兴机构 | 包含薄膜晶体管的lcd或有机el显示器的转换组件 |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
EP1810335B1 (en) | 2004-11-10 | 2020-05-27 | Canon Kabushiki Kaisha | Light-emitting device |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
EP2453480A2 (en) | 2004-11-10 | 2012-05-16 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
US7868326B2 (en) | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
US7608531B2 (en) | 2005-01-28 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
TWI562380B (en) | 2005-01-28 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
US7544967B2 (en) | 2005-03-28 | 2009-06-09 | Massachusetts Institute Of Technology | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
EP3614442A3 (en) | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
CN101667544B (zh) | 2005-11-15 | 2012-09-05 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
CN101522962A (zh) * | 2006-10-16 | 2009-09-02 | 三菱化学株式会社 | 氮化物半导体的制造方法、结晶生长速度增加剂、氮化物单晶、晶片及器件 |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
CN101663762B (zh) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
JP4555358B2 (ja) | 2008-03-24 | 2010-09-29 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよび表示装置 |
KR100941850B1 (ko) | 2008-04-03 | 2010-02-11 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
KR100963027B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
KR100963026B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
JP5345456B2 (ja) | 2008-08-14 | 2013-11-20 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタ |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
JP5616012B2 (ja) | 2008-10-24 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5606682B2 (ja) | 2009-01-29 | 2014-10-15 | 富士フイルム株式会社 | 薄膜トランジスタ、多結晶酸化物半導体薄膜の製造方法、及び薄膜トランジスタの製造方法 |
EP2256814B1 (en) * | 2009-05-29 | 2019-01-16 | Semiconductor Energy Laboratory Co, Ltd. | Oxide semiconductor device and method for manufacturing the same |
JP4571221B1 (ja) | 2009-06-22 | 2010-10-27 | 富士フイルム株式会社 | Igzo系酸化物材料及びigzo系酸化物材料の製造方法 |
JP4415062B1 (ja) | 2009-06-22 | 2010-02-17 | 富士フイルム株式会社 | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
JP2011138934A (ja) | 2009-12-28 | 2011-07-14 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
US8207025B2 (en) * | 2010-04-09 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
CN103339715B (zh) * | 2010-12-03 | 2016-01-13 | 株式会社半导体能源研究所 | 氧化物半导体膜以及半导体装置 |
JP2012160679A (ja) | 2011-02-03 | 2012-08-23 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
US8859330B2 (en) * | 2011-03-23 | 2014-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
-
2012
- 2012-04-16 JP JP2012093303A patent/JP6143423B2/ja active Active
-
2013
- 2013-04-12 US US13/861,587 patent/US9362411B2/en active Active
-
2016
- 2016-05-31 US US15/168,291 patent/US20160276489A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008117739A1 (ja) * | 2007-03-23 | 2008-10-02 | Idemitsu Kosan Co., Ltd. | 半導体デバイス、多結晶半導体薄膜、多結晶半導体薄膜の製造方法、電界効果型トランジスタ、及び、電界効果型トランジスタの製造方法 |
JP2011066070A (ja) * | 2009-09-15 | 2011-03-31 | Idemitsu Kosan Co Ltd | 多結晶薄膜、その成膜方法、及び薄膜トランジスタ |
JP2011105995A (ja) * | 2009-11-18 | 2011-06-02 | Idemitsu Kosan Co Ltd | In−Ga−Zn−O系スパッタリングターゲット |
JP2011139054A (ja) * | 2009-12-04 | 2011-07-14 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2011205089A (ja) * | 2010-03-05 | 2011-10-13 | Semiconductor Energy Lab Co Ltd | 酸化物半導体膜の作製方法、およびトランジスタの作製方法 |
JP2012048806A (ja) * | 2010-07-27 | 2012-03-08 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2012068629A (ja) * | 2010-08-27 | 2012-04-05 | Semiconductor Energy Lab Co Ltd | 発光表示装置の作製方法 |
Non-Patent Citations (1)
Title |
---|
KENJI NOMURA ET AL: "Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. Volume 45, Part 1, Number 5B, JPN6016012467, 25 May 2006 (2006-05-25), pages 4303 - 4308, ISSN: 0003420349 * |
Also Published As
Publication number | Publication date |
---|---|
US9362411B2 (en) | 2016-06-07 |
US20130270555A1 (en) | 2013-10-17 |
JP6143423B2 (ja) | 2017-06-07 |
US20160276489A1 (en) | 2016-09-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6989656B2 (ja) | 半導体装置 | |
US9331207B2 (en) | Oxide semiconductor device and manufacturing method therof | |
JP7101739B2 (ja) | 酸化物半導体膜の作製方法及びトランジスタの作製方法 | |
JP6487088B2 (ja) | 半導体装置の作製方法 | |
JP5964024B2 (ja) | 半導体装置の作製方法 | |
US9196690B2 (en) | Oxide semiconductor film and semiconductor device | |
JP5839554B2 (ja) | 半導体装置 | |
JP6810783B2 (ja) | 半導体装置 | |
JP5838059B2 (ja) | 電子装置及びその作製方法 | |
US20160053362A1 (en) | Film formation apparatus and film formation method | |
US8853697B2 (en) | Semiconductor device | |
JP2011199271A (ja) | 半導体素子の作製方法、成膜装置 | |
US20160276489A1 (en) | Semiconductor device and manufacturing method thereof | |
US9196743B2 (en) | Field effect device with oxide semiconductor layer | |
US8785926B2 (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150330 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160324 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160329 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160510 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20161018 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161228 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20170207 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170418 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170509 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6143423 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |