JP2013218302A5 - - Google Patents
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- Publication number
- JP2013218302A5 JP2013218302A5 JP2013029741A JP2013029741A JP2013218302A5 JP 2013218302 A5 JP2013218302 A5 JP 2013218302A5 JP 2013029741 A JP2013029741 A JP 2013029741A JP 2013029741 A JP2013029741 A JP 2013029741A JP 2013218302 A5 JP2013218302 A5 JP 2013218302A5
- Authority
- JP
- Japan
- Prior art keywords
- mask blank
- thin film
- ion
- mask
- blank according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims 13
- 150000002500 ions Chemical class 0.000 claims 9
- 238000005530 etching Methods 0.000 claims 8
- 239000010410 layer Substances 0.000 claims 7
- 239000007789 gas Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 5
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 238000005259 measurement Methods 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 3
- 239000000460 chlorine Substances 0.000 claims 3
- 229910052801 chlorine Inorganic materials 0.000 claims 3
- 238000001312 dry etching Methods 0.000 claims 3
- 229910052731 fluorine Inorganic materials 0.000 claims 3
- 239000011737 fluorine Substances 0.000 claims 3
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 claims 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 claims 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 239000001110 calcium chloride Substances 0.000 claims 2
- 229910001628 calcium chloride Inorganic materials 0.000 claims 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims 2
- 229910001634 calcium fluoride Inorganic materials 0.000 claims 2
- 229910001629 magnesium chloride Inorganic materials 0.000 claims 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000002344 surface layer Substances 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 claims 2
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 230000001133 acceleration Effects 0.000 claims 1
- 239000010408 film Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013029741A JP6043205B2 (ja) | 2012-03-14 | 2013-02-19 | マスクブランク、及び転写用マスクの製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012057490 | 2012-03-14 | ||
| JP2012057490 | 2012-03-14 | ||
| JP2013029741A JP6043205B2 (ja) | 2012-03-14 | 2013-02-19 | マスクブランク、及び転写用マスクの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013218302A JP2013218302A (ja) | 2013-10-24 |
| JP2013218302A5 true JP2013218302A5 (enExample) | 2016-03-10 |
| JP6043205B2 JP6043205B2 (ja) | 2016-12-14 |
Family
ID=49160801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013029741A Active JP6043205B2 (ja) | 2012-03-14 | 2013-02-19 | マスクブランク、及び転写用マスクの製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20150111134A1 (enExample) |
| JP (1) | JP6043205B2 (enExample) |
| KR (1) | KR101862166B1 (enExample) |
| TW (1) | TWI594064B (enExample) |
| WO (1) | WO2013136882A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150079502A1 (en) * | 2012-03-14 | 2015-03-19 | Hoya Corporation | Mask blank and method of manufacturing a transfer mask |
| KR102313892B1 (ko) * | 2016-03-29 | 2021-10-15 | 호야 가부시키가이샤 | 마스크 블랭크, 마스크 블랭크의 제조 방법, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 |
| JP6900872B2 (ja) * | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | フォトマスクブランク及びその製造方法 |
| JP6900873B2 (ja) * | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | フォトマスクブランク及びその製造方法 |
| WO2019058984A1 (ja) * | 2017-09-21 | 2019-03-28 | Hoya株式会社 | マスクブランク、転写用マスク、及び半導体デバイスの製造方法 |
| JP7379027B2 (ja) * | 2019-09-04 | 2023-11-14 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
| US11454876B2 (en) * | 2020-12-14 | 2022-09-27 | Applied Materials, Inc. | EUV mask blank absorber defect reduction |
| KR102495224B1 (ko) * | 2021-12-20 | 2023-02-06 | 에스케이엔펄스 주식회사 | 적층체의 제조방법 및 적층체 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4604292A (en) * | 1985-04-26 | 1986-08-05 | Spire Corporation | X-ray mask blank process |
| JP2658966B2 (ja) * | 1995-04-20 | 1997-09-30 | 日本電気株式会社 | フォトマスク及びその製造方法 |
| JP2003179034A (ja) * | 2001-12-12 | 2003-06-27 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| WO2003065433A1 (fr) * | 2002-01-28 | 2003-08-07 | Mitsubishi Chemical Corporation | Detergent liquide pour substrat de dispositif semi-conducteur et procede de nettoyage |
| JP4304988B2 (ja) * | 2002-01-28 | 2009-07-29 | 三菱化学株式会社 | 半導体デバイス用基板の洗浄方法 |
| JP4061319B2 (ja) * | 2002-04-11 | 2008-03-19 | Ｈｏｙａ株式会社 | 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法 |
| US20070093406A1 (en) * | 2005-10-24 | 2007-04-26 | Omoregie Henryson | Novel cleaning process for masks and mask blanks |
| EP2056333B1 (de) * | 2007-10-29 | 2016-08-24 | ION-TOF Technologies GmbH | Flüssigmetallionenquelle, Sekundärionenmassenspektrometer, sekundärionenmassenspektrometisches Analyseverfahren sowie deren Verwendungen |
| US20100294306A1 (en) * | 2007-12-04 | 2010-11-25 | Mitsubishi Chemical Corporation | Method and solution for cleaning semiconductor device substrate |
| JP5638769B2 (ja) * | 2009-02-04 | 2014-12-10 | Hoya株式会社 | 反射型マスクブランクの製造方法及び反射型マスクの製造方法 |
| EP2453464A1 (en) * | 2009-07-08 | 2012-05-16 | Asahi Glass Company, Limited | Euv-lithography reflection-type mask blank |
| JP4739461B2 (ja) * | 2009-10-12 | 2011-08-03 | Ｈｏｙａ株式会社 | 転写用マスクの製造方法及び半導体デバイスの製造方法 |
| JP4797114B2 (ja) * | 2009-10-12 | 2011-10-19 | Ｈｏｙａ株式会社 | 転写用マスクの製造方法及び半導体デバイスの製造方法 |
| JP2011204712A (ja) * | 2010-03-24 | 2011-10-13 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
| US8524421B2 (en) * | 2010-03-30 | 2013-09-03 | Hoya Corporation | Mask blank, transfer mask, methods of manufacturing the same and method of manufacturing a semiconductor device |
| US8435704B2 (en) * | 2010-03-30 | 2013-05-07 | Hoya Corporation | Mask blank, transfer mask, and methods of manufacturing the same |
| JP4688966B2 (ja) * | 2010-07-06 | 2011-05-25 | Ｈｏｙａ株式会社 | マスクブランクスの製造方法及び転写マスクの製造方法 |
| KR101913431B1 (ko) * | 2011-04-06 | 2018-10-30 | 호야 가부시키가이샤 | 마스크 블랭크의 표면 처리 방법, 및 마스크 블랭크의 제조 방법과 마스크의 제조 방법 |
| JP5939662B2 (ja) * | 2011-09-21 | 2016-06-22 | Hoya株式会社 | マスクブランクの製造方法 |
| US20150079502A1 (en) * | 2012-03-14 | 2015-03-19 | Hoya Corporation | Mask blank and method of manufacturing a transfer mask |
-
2013
- 2013-02-07 KR KR1020147023824A patent/KR101862166B1/ko active Active
- 2013-02-07 WO PCT/JP2013/052802 patent/WO2013136882A1/ja not_active Ceased
- 2013-02-07 US US14/384,443 patent/US20150111134A1/en not_active Abandoned
- 2013-02-19 JP JP2013029741A patent/JP6043205B2/ja active Active
- 2013-02-21 TW TW102105936A patent/TWI594064B/zh active
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