JP2011095347A5 - - Google Patents
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- Publication number
- JP2011095347A5 JP2011095347A5 JP2009247086A JP2009247086A JP2011095347A5 JP 2011095347 A5 JP2011095347 A5 JP 2011095347A5 JP 2009247086 A JP2009247086 A JP 2009247086A JP 2009247086 A JP2009247086 A JP 2009247086A JP 2011095347 A5 JP2011095347 A5 JP 2011095347A5
- Authority
- JP
- Japan
- Prior art keywords
- mask blank
- transfer
- blank according
- oxide
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims 13
- 239000000126 substance Substances 0.000 claims 7
- 239000002184 metal Substances 0.000 claims 4
- 239000010409 thin film Substances 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- WEAMLHXSIBDPGN-UHFFFAOYSA-N (4-hydroxy-3-methylphenyl) thiocyanate Chemical compound CC1=CC(SC#N)=CC=C1O WEAMLHXSIBDPGN-UHFFFAOYSA-N 0.000 claims 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 229910004261 CaF 2 Inorganic materials 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- TWRSDLOICOIGRH-UHFFFAOYSA-N [Si].[Si].[Hf] Chemical compound [Si].[Si].[Hf] TWRSDLOICOIGRH-UHFFFAOYSA-N 0.000 claims 1
- LKTZODAHLMBGLG-UHFFFAOYSA-N alumanylidynesilicon;$l^{2}-alumanylidenesilylidenealuminum Chemical compound [Si]#[Al].[Si]#[Al].[Al]=[Si]=[Al] LKTZODAHLMBGLG-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 239000010408 film Substances 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
- 229910021355 zirconium silicide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009247086A JP5602412B2 (ja) | 2009-10-27 | 2009-10-27 | マスクブランク、転写用マスク、転写用マスクセットおよび半導体デバイスの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009247086A JP5602412B2 (ja) | 2009-10-27 | 2009-10-27 | マスクブランク、転写用マスク、転写用マスクセットおよび半導体デバイスの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011095347A JP2011095347A (ja) | 2011-05-12 |
| JP2011095347A5 true JP2011095347A5 (enExample) | 2012-11-08 |
| JP5602412B2 JP5602412B2 (ja) | 2014-10-08 |
Family
ID=44112359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009247086A Expired - Fee Related JP5602412B2 (ja) | 2009-10-27 | 2009-10-27 | マスクブランク、転写用マスク、転写用マスクセットおよび半導体デバイスの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5602412B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103105738B (zh) * | 2011-11-14 | 2015-12-16 | 中芯国际集成电路制造(上海)有限公司 | 一种曝光方法 |
| JP6314423B2 (ja) * | 2013-10-25 | 2018-04-25 | 凸版印刷株式会社 | 反射型マスク |
| JP6540758B2 (ja) * | 2017-07-31 | 2019-07-10 | 信越化学工業株式会社 | フォトマスクブランク |
| JP6490786B2 (ja) * | 2017-12-25 | 2019-03-27 | Hoya株式会社 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
| JP2021067908A (ja) * | 2019-10-28 | 2021-04-30 | Hoya株式会社 | マスクブランク、転写用マスク、及び半導体デバイスの製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06258817A (ja) * | 1993-03-05 | 1994-09-16 | Toppan Printing Co Ltd | 位相シフトマスクおよびそれに用いるブランクならびにそれらの製造方法 |
| JP3115185B2 (ja) * | 1993-05-25 | 2000-12-04 | 株式会社東芝 | 露光用マスクとパターン形成方法 |
| JP2001297976A (ja) * | 2000-04-17 | 2001-10-26 | Canon Inc | 露光方法及び露光装置 |
| JP2002062638A (ja) * | 2000-08-21 | 2002-02-28 | Semiconductor Leading Edge Technologies Inc | マスクブランクス、フォトマスク、パターン形成方法および半導体装置の製造方法 |
| JP4566547B2 (ja) * | 2003-11-13 | 2010-10-20 | Ｈｏｙａ株式会社 | マスクブランクスの製造方法及び転写マスクの製造方法 |
| JP4958149B2 (ja) * | 2006-11-01 | 2012-06-20 | Ｈｏｙａ株式会社 | 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法 |
| JP2009086094A (ja) * | 2007-09-28 | 2009-04-23 | Hoya Corp | マスクブランク及び転写用マスク |
-
2009
- 2009-10-27 JP JP2009247086A patent/JP5602412B2/ja not_active Expired - Fee Related
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