JP2018146760A5 - - Google Patents

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Publication number
JP2018146760A5
JP2018146760A5 JP2017041418A JP2017041418A JP2018146760A5 JP 2018146760 A5 JP2018146760 A5 JP 2018146760A5 JP 2017041418 A JP2017041418 A JP 2017041418A JP 2017041418 A JP2017041418 A JP 2017041418A JP 2018146760 A5 JP2018146760 A5 JP 2018146760A5
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Japan
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film
transfer
thin film
pattern
material film
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JP2017041418A
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Japanese (ja)
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JP6800779B2 (ja
JP2018146760A (ja
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JP2017041418A 2017-03-06 2017-03-06 転写用マスクの製造方法、および半導体デバイスの製造方法 Active JP6800779B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2017041418A JP6800779B2 (ja) 2017-03-06 2017-03-06 転写用マスクの製造方法、および半導体デバイスの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017041418A JP6800779B2 (ja) 2017-03-06 2017-03-06 転写用マスクの製造方法、および半導体デバイスの製造方法

Publications (3)

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JP2018146760A JP2018146760A (ja) 2018-09-20
JP2018146760A5 true JP2018146760A5 (enExample) 2020-03-12
JP6800779B2 JP6800779B2 (ja) 2020-12-16

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JP2017041418A Active JP6800779B2 (ja) 2017-03-06 2017-03-06 転写用マスクの製造方法、および半導体デバイスの製造方法

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JP (1) JP6800779B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021048329A (ja) 2019-09-19 2021-03-25 キオクシア株式会社 パターン形成方法及びテンプレートの製造方法
KR102444967B1 (ko) * 2021-04-29 2022-09-16 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR102392332B1 (ko) * 2021-06-08 2022-04-28 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1452009A (zh) * 2002-04-16 2003-10-29 林心迪 形成微影制程的相偏移光罩的方法
US7482280B2 (en) * 2005-08-15 2009-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming a lithography pattern
JP5144127B2 (ja) * 2007-05-23 2013-02-13 キヤノン株式会社 ナノインプリント用のモールドの製造方法
US9791779B2 (en) * 2014-10-16 2017-10-17 Tokyo Electron Limited EUV resist etch durability improvement and pattern collapse mitigation

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