JP2018146760A5 - - Google Patents
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- JP2018146760A5 JP2018146760A5 JP2017041418A JP2017041418A JP2018146760A5 JP 2018146760 A5 JP2018146760 A5 JP 2018146760A5 JP 2017041418 A JP2017041418 A JP 2017041418A JP 2017041418 A JP2017041418 A JP 2017041418A JP 2018146760 A5 JP2018146760 A5 JP 2018146760A5
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- film
- transfer
- thin film
- pattern
- material film
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- 239000010408 film Substances 0.000 claims description 78
- 239000000463 material Substances 0.000 claims description 34
- 239000010409 thin film Substances 0.000 claims description 22
- 239000006096 absorbing agent Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 10
- 238000001312 dry etching Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 230000000737 periodic Effects 0.000 description 8
- 239000010410 layer Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000002356 single layer Substances 0.000 description 1
Description
［遮光膜（吸収体膜）１３］
遮光膜（吸収体膜）１３は、次に説明する薄膜をマスクにしたエッチングによって微細パターンが形成される膜である。この遮光膜（吸収体膜）１３は、マスクブランクの種類に応じた材料を用いて構成された単層または多層構造の膜である。
[Light shielding film (absorber film) 13]
The light-shielding film (absorber film) 13 is a film on which a fine pattern is formed by etching using a thin film described below as a mask. The light-shielding film (absorber film) 13 is a single-layer or multi-layer film made of a material according to the type of the mask blank.
なお、反射型マスク用の吸収体膜１３の下層であって、反射型マスク用の吸収体膜１３と基板１１との間に設けられる多層反射膜は、ＥＵＶ光を反射する機能を有する膜である。このような光反射膜は、例えば多層反射膜である。多層反射膜は、高屈折率層と低屈折率層とを交互に積層して形成される。多層反射膜としては、Ｍｏ膜とＳｉ膜を交互に４０周期程度積層したＭｏ／Ｓｉ周期積層膜、Ｒｕ／Ｓｉ周期多層膜、Ｍｏ／Ｂｅ周期多層膜、Ｍｏ化合物／Ｓｉ化合物周期多層膜、Ｓｉ／Ｎｂ周期多層膜、Ｓｉ／Ｍｏ／Ｒｕ周期多層膜、Ｓｉ／Ｍｏ／Ｒｕ／Ｍｏ周期多層膜、Ｓｉ／Ｒｕ／Ｍｏ／Ｒｕ周期多層膜等が例示され、露光光の波長により、材質を適宜選択することができる。以上のような反射型マスク用の吸収体膜１３および光反射膜は、例えばスパッタ法によって形成することができる。 The multilayer reflective film provided below the absorber film 13 for the reflective mask and provided between the absorber film 13 for the reflective mask and the substrate 11 is a film having a function of reflecting EUV light. is there. Such a light reflection film is, for example, a multilayer reflection film. The multilayer reflective film is formed by alternately stacking high refractive index layers and low refractive index layers. As the multilayer reflection film, a Mo / Si periodic multilayer film, a Ru / Si periodic multilayer film, a Mo / Be periodic multilayer film, a Mo compound / Si compound periodic multilayer film in which Mo films and Si films are alternately laminated for about 40 periods, Si, / Nb periodic multilayer film, Si / Mo / Ru periodic multilayer film, Si / Mo / Ru / Mo periodic multilayer film, Si / Ru / Mo / Ru periodic multilayer film, and the like. You can choose. The absorber film 13 and the light reflecting film for the reflective mask as described above can be formed by, for example, a sputtering method.
Claims (10)
前記薄膜上に電子線露光用のレジスト膜が設けられたマスクブランクを準備する工程と、
前記レジスト膜に対して露光処理および現像処理を行い、前記薄膜に形成すべき転写パターンを前記レジスト膜に形成する工程と、
前記転写パターンが形成されたレジスト膜を埋め込む状態で、前記レジスト膜上および前記薄膜上に第１材料膜を成膜する工程と、
前記転写パターンが形成されたレジスト膜の間に前記第１材料膜を残した状態で前記レジスト膜の上面が露出するまで前記第１材料膜を除去することにより、前記転写パターンに対して反転した反転パターンを前記第１材料膜に形成し、その後前記第１材料膜に対して選択的に前記レジスト膜を除去する工程と、
前記反転パターンが形成された前記第１材料膜を埋め込む状態で、前記第１材料膜上および前記薄膜上に前記第１材料膜とは異なる材料からなる第２材料膜を成膜する工程と、
前記反転パターンが形成された前記第１材料膜の間に前記第２材料膜を残した状態で前記第１材料膜の上面が露出するまで前記第２材料膜を除去することにより、前記第２材料膜に前記転写パターンを形成し、その後ドライエッチングによって前記第２材料膜に対して選択的に前記第１材料膜を除去する工程と、
前記転写パターンが形成された第２材料膜をマスクとし、前記薄膜に対してドライエッチングを行い、前記薄膜に転写パターンを形成する工程とを備える
ことを特徴とする転写用マスクの製造方法。 A method for manufacturing a transfer mask using a mask blank having a thin film on a main surface of a substrate,
Preparing a mask blank provided with a resist film for electron beam exposure on the thin film,
Performing an exposure process and a development process on the resist film, and forming a transfer pattern to be formed on the thin film on the resist film;
Forming a first material film on the resist film and the thin film while embedding the resist film on which the transfer pattern is formed;
By removing the first material film until the upper surface of the resist film is exposed in a state where the first material film is left between the resist films on which the transfer pattern is formed, the first material film is inverted with respect to the transfer pattern. Forming an inversion pattern in the first material film, and then selectively removing the resist film with respect to the first material film;
Forming a second material film made of a material different from the first material film on the first material film and the thin film while embedding the first material film on which the inverted pattern is formed;
By removing the second material film until the upper surface of the first material film is exposed while leaving the second material film between the first material films on which the inverted pattern is formed, the second material film is removed. Forming the transfer pattern on a material film, and then selectively removing the first material film with respect to the second material film by dry etching;
Performing dry etching on the thin film using the second material film on which the transfer pattern is formed as a mask to form a transfer pattern on the thin film.
ことを特徴とする請求項１に記載の転写用マスクの製造方法。 The method for manufacturing a transfer mask according to claim 1, wherein the first material film and the second material film are both made of a material having an etching selectivity with respect to the thin film.
ことを特徴とする請求項１または２に記載の転写用マスクの製造方法。 The ratio of the etching rate of the second material film to the etching rate of the first material film when the first material film is selectively removed from the second material film by the dry etching is 1: 2 or more. The method for manufacturing a transfer mask according to claim 1, wherein:
ことを特徴とする請求項１から３のいずれかに記載の転写用マスクの製造方法。 The method for manufacturing a transfer mask according to any one of claims 1 to 3, wherein the thin film is formed by a sputtering method.
ことを特徴とする請求項１から４のいずれかに記載の転写用マスクの製造方法。 The method for manufacturing a transfer mask according to claim 1, wherein the thin film is made of a material containing chromium.
ことを特徴とする請求項１から５のいずれかに記載の転写用マスクの製造方法。 The method for manufacturing a transfer mask according to claim 1, wherein both the first material film and the second material film are made of a material containing silicon.
前記転写パターンが形成された前記薄膜をマスクとし、前記遮光膜に対してドライエッチングを行い、前記遮光膜に転写パターンを形成する工程と、
前記遮光膜に転写パターンを形成した後に前記薄膜を除去する工程とを備える
ことを特徴とする請求項１から６のいずれかに記載の転写用マスクの製造方法。 The mask blank, a light-shielding film is provided between the substrate and the thin film,
Using the thin film on which the transfer pattern is formed as a mask, performing dry etching on the light shielding film, and forming a transfer pattern on the light shielding film,
The method according to claim 1, further comprising: removing a thin film after forming a transfer pattern on the light-shielding film.
前記転写パターンが形成された前記薄膜をマスクとし、前記光半透過膜に対してドライ
エッチングを行い、前記光半透過膜に転写パターンを形成するとともに前記第２材料膜を除去する工程と、
前記第２材料膜を除去した後、前記薄膜上に遮光帯パターンを含むレジストパターンを形成し、前記レジストパターンをマスクとして前記薄膜に対してドライエッチングを行い、前記薄膜に遮光帯を含むパターンを形成する工程とを備える
ことを特徴とする請求項１から６のいずれかに記載の転写用マスクの製造方法。 The mask blank, a light translucent film is provided between the substrate and the thin film,
Using the thin film on which the transfer pattern is formed as a mask, performing dry etching on the light semi-transmissive film, forming a transfer pattern on the light semi-transmissive film, and removing the second material film;
After removing the second material film, a resist pattern including a light-shielding band pattern is formed on the thin film, dry etching is performed on the thin film using the resist pattern as a mask, and a pattern including a light-shielding band is formed on the thin film. The method of manufacturing a transfer mask according to claim 1, further comprising: forming the transfer mask.
前記転写パターンが形成された前記薄膜をマスクとし、前記吸収体膜に対してドライエッチングを行い、前記吸収体膜に転写パターンを形成する工程と、Using the thin film on which the transfer pattern is formed as a mask, performing dry etching on the absorber film, and forming a transfer pattern on the absorber film,
前記吸収体膜に転写パターンを形成した後に前記薄膜を除去する工程とを備えるRemoving the thin film after forming a transfer pattern on the absorber film.
ことを特徴とする請求項１から６のいずれかに記載の転写用マスクの製造方法。The method for manufacturing a transfer mask according to claim 1, wherein:
ことを特徴とする半導体デバイスの製造方法。 A semiconductor device comprising a step of exposing and transferring a transfer pattern onto a resist film on a semiconductor substrate using the transfer mask manufactured by the method for manufacturing a transfer mask according to claim 7. Manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017041418A JP6800779B2 (en) | 2017-03-06 | 2017-03-06 | Manufacturing method of transfer mask and manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017041418A JP6800779B2 (en) | 2017-03-06 | 2017-03-06 | Manufacturing method of transfer mask and manufacturing method of semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018146760A JP2018146760A (en) | 2018-09-20 |
| JP2018146760A5 true JP2018146760A5 (en) | 2020-03-12 |
| JP6800779B2 JP6800779B2 (en) | 2020-12-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017041418A Active JP6800779B2 (en) | 2017-03-06 | 2017-03-06 | Manufacturing method of transfer mask and manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
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| JP (1) | JP6800779B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021048329A (en) | 2019-09-19 | 2021-03-25 | キオクシア株式会社 | Pattern formation method and template manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1452009A (en) * | 2002-04-16 | 2003-10-29 | 林心迪 | Method for forming phase deviation optical mask of microimage mfg. process |
| US7482280B2 (en) * | 2005-08-15 | 2009-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming a lithography pattern |
| JP5144127B2 (en) * | 2007-05-23 | 2013-02-13 | キヤノン株式会社 | Method for producing mold for nanoimprint |
| US9791779B2 (en) * | 2014-10-16 | 2017-10-17 | Tokyo Electron Limited | EUV resist etch durability improvement and pattern collapse mitigation |
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