JP2016126319A5 - - Google Patents

Claims (11)

A reflective mask blank in which a conductive base film, a multilayer reflective film that reflects exposure light, and an absorber film that absorbs exposure light are laminated on a substrate,
The reflective mask blank, wherein the conductive base film is provided adjacent to the multilayer reflective film and is made of a tantalum-based material having a thickness of 1 nm to 10 nm. A reflective mask blank in which a conductive base film, a multilayer reflective film that reflects exposure light, and an absorber film that absorbs exposure light are laminated on a substrate,
The conductive base film is a tantalum-based material layer having a thickness of 1 nm to 10 nm provided adjacent to the multilayer reflective film, and a conductive material provided between the tantalum-based material layer and the substrate. A reflective mask blank comprising a laminated film including a layer.   The reflective mask blank according to claim 1, wherein the tantalum material contains at least one of nitrogen and oxygen.   The reflective mask blank according to any one of claims 1 to 3, wherein a protective film is formed on the multilayer reflective film, and the protective film is made of a ruthenium-based material.   The multilayer reflective film is formed by alternately laminating first layers containing silicon and second layers containing molybdenum, and the lowest layer of the multilayer reflective film in contact with the conductive base film is the first layer. The reflective mask blank according to claim 1, wherein the reflective mask blank is a layer.   The multilayer reflective film is formed by alternately laminating first layers containing silicon and second layers containing molybdenum, and the lowest layer of the multilayer reflective film in contact with the conductive base film is the second layer. The reflective mask blank according to claim 1, wherein the reflective mask blank is a layer.   A reflective mask produced by the reflective mask blank according to any one of claims 1 to 6. Preparing a reflective mask blank according to any one of claims 1 to 6;
Forming a resist pattern on the absorber film and forming the absorber pattern by etching using the resist pattern as a mask, or forming a resist pattern after forming a hard mask film for etching on the absorber film; A step of transferring the resist pattern to the absorber film by etching through the hard mask film to form an absorber pattern;
And a step of dry-etching a part of the multilayer reflective film with a chlorine-based gas containing oxygen gas.   9. The method of manufacturing a reflective mask according to claim 8, wherein the portion where the part of the multilayer reflective film is etched is a light-shielding band region provided so as to surround the circuit pattern region.   10. A reflective mask according to claim 8, wherein a protective film made of a ruthenium-based material is formed on the multilayer reflective film, and the protective film and the multilayer reflective film are continuously dry-etched. Method.   The reflective mask according to claim 7 or the reflective mask manufactured by the method of manufacturing a reflective mask according to any one of claims 8 to 10 is used to form the reflective mask. A method of manufacturing a semiconductor device, comprising: exposing and transferring a pattern to a resist film formed on a semiconductor substrate.