JP2015212720A5 - - Google Patents

Download PDF

Info

Publication number
JP2015212720A5
JP2015212720A5 JP2014094482A JP2014094482A JP2015212720A5 JP 2015212720 A5 JP2015212720 A5 JP 2015212720A5 JP 2014094482 A JP2014094482 A JP 2014094482A JP 2014094482 A JP2014094482 A JP 2014094482A JP 2015212720 A5 JP2015212720 A5 JP 2015212720A5
Authority
JP
Japan
Prior art keywords
light
semi
film
shielding
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014094482A
Other languages
Japanese (ja)
Other versions
JP2015212720A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2014094482A priority Critical patent/JP2015212720A/en
Priority claimed from JP2014094482A external-priority patent/JP2015212720A/en
Priority to KR1020140094104A priority patent/KR101640082B1/en
Priority to TW105104327A priority patent/TWI617876B/en
Priority to TW103125593A priority patent/TWI530753B/en
Priority to CN201410389535.2A priority patent/CN105022223A/en
Publication of JP2015212720A publication Critical patent/JP2015212720A/en
Publication of JP2015212720A5 publication Critical patent/JP2015212720A5/ja
Priority to KR1020160087056A priority patent/KR101869598B1/en
Pending legal-status Critical Current

Links

Claims (18)

透明基板上に形成された遮光膜及び半透光膜がそれぞれパターニングされることによって形成された、遮光部、半透光部、及び透光部を備えた転写用パターンを有する、多階調フォトマスクの製造方法において、
前記転写用パターンは、前記遮光部と透光部が隣接する部分と、前記半透光部と透光部が隣接する部分とを有し、
前記透明基板上に前記遮光膜が形成されたフォトマスクブランクを用意する工程と、
前記遮光部となる領域以外の領域の遮光膜をエッチング除去して前記遮光部を形成する工程と、
前記遮光部が形成された前記透明基板上に、前記半透光膜を成膜する工程と、
前記半透光膜上において、透光部となる領域を含む領域に開口をもつレジストパターンを形成するレジストパターン形成工程と、
前記レジストパターンをマスクとして、前記半透光膜をエッチングする、半透光膜エッチング工程と、
前記レジストパターンを除去する工程とを有し、
前記レジストパターン形成工程では、前記遮光部と隣接する透光部となる領域の寸法に、アライメントマージンを加えた寸法の開口をもつレジストパターンを形成し、
前記半透光膜エッチング工程では、前記レジストパターンの開口内において、前記透光部となる領域の透明基板が露出し、かつ、前記遮光部の、前記透光部と隣接するエッジ部分において、前記遮光膜上の前記半透光膜が、厚さ方向に少なくとも一部エッチングされることを特徴とする、多階調フォトマスクの製造方法。 A multi-tone photo having a light-shielding part, a semi-transparent part, and a transfer pattern having a translucent part, formed by patterning a light-shielding film and a semi-transparent film formed on a transparent substrate, respectively. In the mask manufacturing method,
The transfer pattern has a portion where the light-shielding portion and the light-transmitting portion are adjacent to each other, and a portion where the semi-light-transmitting portion and the light-transmitting portion are adjacent to each other,
Preparing a photomask blank in which the light-shielding film is formed on the transparent substrate;
Etching the light shielding film in a region other than the region to be the light shielding portion to form the light shielding portion;
Forming the semi-transparent film on the transparent substrate on which the light shielding portion is formed;
On the semi-transparent film, a resist pattern forming step of forming a resist pattern having an opening in a region including a region to be a light transmitting portion;
Etching the semi-transparent film using the resist pattern as a mask, a semi-transparent film etching step,
Removing the resist pattern,
In the resist pattern forming step, a resist pattern having an opening having a dimension obtained by adding an alignment margin to a dimension of a light transmitting part adjacent to the light shielding part,
In the semi-transparent film etching step, in the opening of the resist pattern, a transparent substrate in a region to be the light transmitting portion is exposed, and in the edge portion of the light shielding portion adjacent to the light transmitting portion, A method for producing a multi-tone photomask, wherein the semi-transparent film on a light shielding film is at least partially etched in a thickness direction. 前記半透光膜エッチング工程において、前記半透光膜が厚さ方向に少なくとも一部エッチングされた遮光部のエッジ部分の、前記多階調フォトマスクの露光光に対する光学密度（OD）が２以上であることを特徴とする、請求項１に記載の多階調フォトマスクの製造方法。   In the semi-transparent film etching step, the optical density (OD) with respect to the exposure light of the multi-tone photomask at the edge portion of the light shielding portion where the semi-transparent film is at least partially etched in the thickness direction is 2 or more. The method of manufacturing a multi-tone photomask according to claim 1, wherein: 前記半透光膜及び前記遮光膜が、同一のエッチング液によってエッチングされうる材料からなることを特徴とする、請求項１又は２に記載の多階調フォトマスクの製造方法。   The method for manufacturing a multi-tone photomask according to claim 1, wherein the semi-transparent film and the light-shielding film are made of a material that can be etched by the same etching solution. 前記半透光膜及び前記遮光膜が、同一のエッチング液によってエッチングされうる材料からなり、前記同一のエッチング液に対する、前記半透光膜と前記遮光膜のエッチングレート比が、５：１〜５０：１であることを特徴とする、請求項１〜３のいずれかに記載の多階調フォトマスクの製造方法。   The semi-transparent film and the light-shielding film are made of a material that can be etched by the same etching solution, and the etching rate ratio of the semi-transparent film and the light-shielding film to the same etching solution is 5: 1 to 50. The method for producing a multi-tone photomask according to any one of claims 1 to 3, wherein: 1. 前記アライメントマージンが0.25〜0.75μmであることを特徴とする、請求項１〜４のいずれかに記載の多階調フォトマスクの製造方法。   The method of manufacturing a multi-tone photomask according to claim 1, wherein the alignment margin is 0.25 to 0.75 μm. 前記半透光膜と前記遮光膜のエッチング所要時間の比が1：5〜1：50であることを特徴とする、請求項１〜５のいずれかに記載の多階調フォトマスクの製造方法。   6. The method of manufacturing a multi-tone photomask according to claim 1, wherein a ratio of etching time of the semi-transparent film and the light shielding film is 1: 5 to 1:50. . 前記半透光膜エッチング工程では、前記レジストパターンの開口内において、前記透光部となる領域の前記透明基板が露出し、かつ、前記遮光部の、前記透光部と隣接するエッジ部分において、前記遮光膜上の前記半透光膜が、エッチングにより除去されることを特徴とする、請求項１〜６のいずれかに記載の多階調フォトマスクの製造方法。In the semi-transparent film etching step, in the opening of the resist pattern, the transparent substrate in a region to be the translucent part is exposed, and in the edge part of the light shielding part adjacent to the translucent part, The method for manufacturing a multi-tone photomask according to claim 1, wherein the semi-transparent film on the light shielding film is removed by etching. 前記半透光膜エッチング工程において、前記遮光膜上の前記半透光膜が除去された前記エッジ部分は、前記多階調フォトマスクの露光光に対する光学密度（OD）を２以上とする範囲で、前記遮光膜がエッチングによる損傷を受けることを特徴とする、請求項７に記載の多階調フォトマスクの製造方法。In the semi-transparent film etching step, the edge portion from which the semi-transparent film on the light-shielding film is removed has an optical density (OD) with respect to the exposure light of the multi-tone photomask within a range of 2 or more. The method of manufacturing a multi-tone photomask according to claim 7, wherein the light shielding film is damaged by etching. 前記半透光膜エッチング工程においては、前記遮光部に隣接する前記透光部、及び、前記半透光部に隣接する前記透光部に相当する部分の半透光膜が除去されることを特徴とする、請求項１〜８のいずれかに記載の多階調フォトマスクの製造方法。In the semi-transparent film etching step, the translucent part adjacent to the light-shielding part and the semi-transparent film corresponding to the translucent part adjacent to the semi-transparent part are removed. The method for producing a multi-tone photomask according to claim 1, wherein the method is characterized in that: 前記半透光膜エッチング工程は、ウェットエッチングを適用することを特徴とする、請求項１〜９のいずれかに記載の多階調フォトマスクの製造方法。The method of manufacturing a multi-tone photomask according to claim 1, wherein wet etching is applied to the semi-translucent film etching step. 透明基板上に形成された遮光膜及び半透光膜がそれぞれパターニングされることによって形成された、遮光部、半透光部、及び透光部を備えた転写用パターンを有する、多階調フォトマスクにおいて、
前記転写用パターンは、前記遮光部と透光部が隣接する部分と、前記半透光部と透光部が隣接する部分とを有し、
前記透光部は、前記透明基板が露出し、
前記半透光部は、前記透明基板上に形成された前記半透光膜が露出し、
前記遮光部は、前記遮光膜と前記半透光膜が積層してなる積層部分と、前記遮光膜上の半透光膜が厚さ方向に少なくとも一部エッチングされたエッジ部分とを有し、
前記エッジ部分は、前記透光部に隣接し、前記エッジ部分の露光光に対する光学密度（OD）が２以上であることを特徴とする、多階調フォトマスク。 A multi-tone photo having a light-shielding part, a semi-transparent part, and a transfer pattern having a translucent part, formed by patterning a light-shielding film and a semi-transparent film formed on a transparent substrate, respectively. In the mask
The transfer pattern has a portion where the light-shielding portion and the light-transmitting portion are adjacent to each other, and a portion where the semi-light-transmitting portion and the light-transmitting portion are adjacent to each other,
The transparent part exposes the transparent substrate,
The semi-translucent portion exposes the semi-translucent film formed on the transparent substrate,
The light-shielding portion has a laminated portion formed by laminating the light-shielding film and the semi-transparent film, and an edge portion where the semi-transparent film on the light-shielding film is at least partially etched in the thickness direction,
The multi-tone photomask, wherein the edge portion is adjacent to the light transmitting portion, and an optical density (OD) of the edge portion with respect to exposure light is 2 or more. 前記転写用パターンは、前記半透光部に挟まれた前記透光部と、前記遮光部に挟まれた前記透光部とを備えることを特徴とする、請求項１１に記載の多階調フォトマスク。 The multi-tone according to claim 11 , wherein the transfer pattern includes the translucent portion sandwiched between the semi-translucent portions and the translucent portion sandwiched between the light shielding portions. Photo mask. 前記半透光膜及び前記遮光膜が、同一のエッチング液によってエッチングされうる材料からなることを特徴とする、請求項１１又は１２に記載の多階調フォトマスク。 The multi-tone photomask according to claim 11 or 12 , wherein the semi-transparent film and the light-shielding film are made of a material that can be etched by the same etching solution. 前記半透光膜及び前記遮光膜が、同一のエッチング液によってエッチングされうる材料からなり、前記同一のエッチング液に対する、前記半透光膜と前記遮光膜のエッチングレート比が、５：１〜５０：１であることを特徴とする、請求項１１又は１２に記載の多階調フォトマスク。 The semi-transparent film and the light-shielding film are made of a material that can be etched by the same etching solution, and the etching rate ratio of the semi-transparent film and the light-shielding film to the same etching solution is 5: 1 to 50. : characterized in that it is a 1, multi-tone photo mask according to claim 11 or 12. 前記エッジ部分の幅は０．２５〜０．７５μmであることを特徴とする、請求項１１〜１４のいずれか一項に記載の多階調フォトマスク。The multi-tone photomask according to claim 11, wherein a width of the edge portion is 0.25 to 0.75 μm. 前記エッジ部分は、前記遮光膜上の前記半透光膜がエッチングにより除去されたものであることを特徴とする、請求項１１〜１５のいずれか一項に記載の多階調フォトマスク。The multi-tone photomask according to any one of claims 11 to 15, wherein the edge portion is formed by removing the semi-translucent film on the light shielding film by etching. 前記エッジ部分は、前記遮光膜上の前記半透光膜がエッチングにより除去され、かつ、前記多階調フォトマスクの露光光に対する光学密度（OD）を２以上とする範囲で、前記遮光膜がエッチングによる損傷を受けたものであることを特徴とする、請求項１６に記載の多階調フォトマスク。In the edge portion, the light-shielding film is within a range in which the semi-transparent film on the light-shielding film is removed by etching and the optical density (OD) with respect to the exposure light of the multi-tone photomask is 2 or more. The multi-tone photomask according to claim 16, wherein the multi-tone photomask is damaged by etching. 請求項１１〜１７のいずれかに記載の多階調フォトマスクを用意する工程と、
露光装置によって前記多階調フォトマスクに露光し、前記転写用パターンを、被転写体に転写する工程とを有することを特徴とする、表示装置の製造方法。 Preparing a multi-tone photomask according to any one of claims 11 to 17 ,
A method for manufacturing a display device, comprising: exposing the multi-tone photomask by an exposure device and transferring the transfer pattern onto a transfer target.
JP2014094482A 2014-05-01 2014-05-01 Method of producing multi-gradation photo mask, the multi-gradation photo mask, and method of producing display device Pending JP2015212720A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014094482A JP2015212720A (en) 2014-05-01 2014-05-01 Method of producing multi-gradation photo mask, the multi-gradation photo mask, and method of producing display device
KR1020140094104A KR101640082B1 (en) 2014-05-01 2014-07-24 Manufacturing method of multi-gray scale photomask, multi-gray scale photomask and method of manufacturing display device
TW105104327A TWI617876B (en) 2014-05-01 2014-07-25 Method of manufacturing a multi-tone photomask, multi-tone photomask and method of manufacturing a display device
TW103125593A TWI530753B (en) 2014-05-01 2014-07-25 Method of manufacturing a multi-tone photomask, multi-tone photomask and method of manufacturing a display device
CN201410389535.2A CN105022223A (en) 2014-05-01 2014-08-08 Multi-gray scale photomask, manufacturing method thereof, and method of manufacturing display device
KR1020160087056A KR101869598B1 (en) 2014-05-01 2016-07-08 Manufacturing method of multi-gray scale photomask, multi-gray scale photomask and method of manufacturing display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014094482A JP2015212720A (en) 2014-05-01 2014-05-01 Method of producing multi-gradation photo mask, the multi-gradation photo mask, and method of producing display device

Publications (2)

Publication Number Publication Date
JP2015212720A JP2015212720A (en) 2015-11-26
JP2015212720A5 true JP2015212720A5 (en) 2016-06-02

Family

ID=54412291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014094482A Pending JP2015212720A (en) 2014-05-01 2014-05-01 Method of producing multi-gradation photo mask, the multi-gradation photo mask, and method of producing display device

Country Status (4)

Country Link
JP (1) JP2015212720A (en)
KR (2) KR101640082B1 (en)
CN (1) CN105022223A (en)
TW (2) TWI530753B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6514143B2 (en) * 2016-05-18 2019-05-15 Hoya株式会社 METHOD FOR MANUFACTURING PHOTO MASK, PHOTO MASK, AND METHOD FOR MANUFACTURING DISPLAY DEVICE
JP6573591B2 (en) * 2016-09-13 2019-09-11 Hoya株式会社 Photomask manufacturing method, photomask, and display device manufacturing method
TW201823855A (en) * 2016-09-21 2018-07-01 日商Ｈｏｙａ股份有限公司 Method of manufacturing a photomask, photomask, and method of manufacturing a display device
JP6259508B1 (en) * 2016-12-28 2018-01-10 株式会社エスケーエレクトロニクス Halftone mask, photomask blank, and method of manufacturing halftone mask
JP6368000B1 (en) * 2017-04-04 2018-08-01 株式会社エスケーエレクトロニクス Photomask, photomask blank, and photomask manufacturing method
CN108196421B (en) * 2017-12-14 2021-03-05 深圳市路维光电股份有限公司 Method for manufacturing gray-scale mask
CN111367142A (en) * 2018-12-26 2020-07-03 聚灿光电科技（宿迁）有限公司 Novel optical mask plate with different light transmission

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06188270A (en) * 1992-12-15 1994-07-08 Mitsubishi Electric Corp Manufacture of field effect transistor and pattern transfer mask
JPH0798493A (en) * 1993-09-28 1995-04-11 Toppan Printing Co Ltd Phase shift mask and its production
JP4780264B2 (en) * 2001-05-16 2011-09-28 信越化学工業株式会社 Method for forming chromium-based photomask
JP4521694B2 (en) 2004-03-09 2010-08-11 Ｈｏｙａ株式会社 Gray-tone mask and thin film transistor manufacturing method
JP4468093B2 (en) * 2004-07-01 2010-05-26 大日本印刷株式会社 Gradation photomask manufacturing method
JP2006030320A (en) * 2004-07-12 2006-02-02 Hoya Corp Gray tone mask and method for manufacturing gray tone mask
JP4587837B2 (en) * 2005-02-18 2010-11-24 Ｈｏｙａ株式会社 Gray tone mask manufacturing method and gray tone mask
JP4919220B2 (en) * 2005-02-28 2012-04-18 Ｈｏｙａ株式会社 Gray tone mask
JP4693451B2 (en) * 2005-03-22 2011-06-01 Ｈｏｙａ株式会社 Method for manufacturing gray tone mask and method for manufacturing thin film transistor substrate
DE602006021102D1 (en) * 2005-07-21 2011-05-19 Shinetsu Chemical Co Photomask blank, photomask and their manufacturing process
JP4968709B2 (en) * 2006-03-17 2012-07-04 Ｈｏｙａ株式会社 Manufacturing method of gray tone mask
JP4809752B2 (en) * 2006-11-01 2011-11-09 株式会社エスケーエレクトロニクス Halftone photomask and method for manufacturing the same
JP2009080421A (en) * 2007-09-27 2009-04-16 Hoya Corp Mask blank and method for manufacturing mold for imprinting
JP5215019B2 (en) * 2008-03-28 2013-06-19 Ｈｏｙａ株式会社 Multi-tone photomask, manufacturing method thereof, and pattern transfer method
JP2009237491A (en) * 2008-03-28 2009-10-15 Hoya Corp Defect correction method for photomask, manufacturing method of photomask, and pattern transfer method
JP2011159875A (en) * 2010-02-02 2011-08-18 Hitachi Cable Ltd Method of manufacturing tape carrier for semiconductor device
JP2011186506A (en) * 2011-07-01 2011-09-22 Sk Electronics:Kk Halftone photomask
JP6139826B2 (en) * 2012-05-02 2017-05-31 Hoya株式会社 Photomask, pattern transfer method, and flat panel display manufacturing method
JP6081716B2 (en) * 2012-05-02 2017-02-15 Hoya株式会社 Photomask, pattern transfer method, and flat panel display manufacturing method
JP5739375B2 (en) * 2012-05-16 2015-06-24 信越化学工業株式会社 Halftone phase shift mask blank and method of manufacturing halftone phase shift mask

Similar Documents

Publication Publication Date Title
JP2015212720A5 (en)
JP2013134435A5 (en)
JP2014186333A5 (en) Transmission mask blank, transmission mask, and method for manufacturing semiconductor device
JP2011215197A5 (en)
JP2008282046A5 (en)
JP2016164683A5 (en)
JP2009042753A5 (en)
JP2008310367A5 (en)
JP2015212826A5 (en)
JP2005345737A5 (en)
JP2016189002A5 (en)
JP2006267262A5 (en)
JP2014157364A5 (en) Transmission mask blank, transmission mask, and method for manufacturing semiconductor device
JP2015502668A5 (en)
JP2010166038A5 (en)
JP2005530338A5 (en)
JP2011090344A5 (en)
TW200720837A (en) Photomask blank and process for producing the same, process for producing photomask, and process for producing semiconductor device
JP2010198103A5 (en)
JP2015191218A5 (en)
JP2010276724A5 (en)
JP2019053288A5 (en) Manufacturing method of photomask and display device
JP2015222448A5 (en)
JP2019008318A5 (en)
JP2015028537A5 (en) Method for manufacturing light diffusing member