TWI530753B - Method of manufacturing a multi-tone photomask, multi-tone photomask and method of manufacturing a display device - Google Patents
Method of manufacturing a multi-tone photomask, multi-tone photomask and method of manufacturing a display device Download PDFInfo
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- TWI530753B TWI530753B TW103125593A TW103125593A TWI530753B TW I530753 B TWI530753 B TW I530753B TW 103125593 A TW103125593 A TW 103125593A TW 103125593 A TW103125593 A TW 103125593A TW I530753 B TWI530753 B TW I530753B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/28—Phase shift masks [PSM]; PSM blanks; Preparation thereof with three or more diverse phases on the same PSM; Preparation thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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Description
本發明係關於一種對製造以液晶或有機EL(Electro Luminescence，電致發光)為代表之顯示裝置有用之多調式光罩及其製造方法、以及使用該多調式光罩之顯示裝置之製造方法。 The present invention relates to a multi-tone mask useful for manufacturing a display device typified by liquid crystal or organic EL (electroluminescence), a method of manufacturing the same, and a method of manufacturing a display device using the multi-tone mask.
先前，已知有一種具備將形成於透明基板上之遮光膜及半透光膜分別圖案化而成之轉印用圖案的多調式光罩。 Conventionally, a multi-tone mask having a transfer pattern in which a light-shielding film and a semi-transmissive film formed on a transparent substrate are respectively patterned is known.
例如於專利文獻1中記載有一種即便不設置蝕刻終止膜，亦可由蝕刻特性相同或近似之膜材料構成遮光膜及半透光膜，且可防止半透光部之圖案偏差的半色調(halftone)膜型灰階光罩(graytone mask)及其製造方法。 For example, Patent Document 1 discloses a halftone (halftone) in which a light-shielding film and a semi-transmissive film are formed of a film material having the same or similar etching characteristics, and a pattern deviation of the semi-transmissive portion can be prevented, even if an etching stopper film is not provided. A film type grayscale mask and a method of manufacturing the same.
[專利文獻1]日本專利特開2005-257712號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-257712
使用半透光膜之多調式光罩(灰階光罩)由於可減少顯示裝置等之製造中所需之光罩之片數，故而對提高生產效率有用。此處，如專利 文獻1般使用半色調膜之多調式光罩具有將施行過圖案化之複數片膜(遮光膜、或使曝光之光透過一部分之半透光膜等)積層而成之轉印用圖案。於製造此種多調式光罩時，若利用專利文獻1所記載之製造方法，則無需選擇膜素材中相互具有蝕刻選擇性者，因此，有素材之選擇範圍廣泛之優點。 A multi-tone mask (gray-scale mask) using a semi-transparent film is useful for improving production efficiency because the number of masks required for manufacturing a display device or the like can be reduced. Here, such as a patent The multi-tone mask using a halftone film as in the literature 1 has a transfer pattern in which a plurality of patterned films (a light-shielding film or a semi-transmissive film that transmits a part of the light to be transmitted) are laminated. When manufacturing such a multi-mode mask, when the manufacturing method described in Patent Document 1 is used, it is not necessary to select an etching selectivity between the film materials. Therefore, there is an advantage in that the material selection range is wide.
於專利文獻1所記載之製造方法中，藉由圖2所記載之步驟製造圖2(i)所示之灰階光罩300。具體而言，首先，準備空白光罩200，該空白光罩200係於透明基板201上形成遮光膜202，且於其上塗佈正型抗蝕劑而形成抗蝕膜203(圖2(a))。 In the manufacturing method described in Patent Document 1, the gray scale mask 300 shown in Fig. 2(i) is produced by the procedure described in Fig. 2 . Specifically, first, a blank mask 200 is formed which is formed on the transparent substrate 201 to form a light shielding film 202, and a positive resist is applied thereon to form a resist film 203 (FIG. 2 (a) )).
繼而，使用雷射繪圖機等對上述空白光罩200進行繪圖(第1繪圖)，並進行顯影。藉此於形成半透光部之區域(圖2之A區域)去除抗蝕膜，於形成遮光部之區域(圖2之B區域)及形成透光部之區域(圖2之C區域)，形成抗蝕膜殘存之抗蝕圖案203a(圖2(b))。 Then, the blank mask 200 is drawn (first drawing) using a laser plotter or the like, and development is performed. Thereby, the resist film is removed in the region where the semi-transmissive portion is formed (the region A in FIG. 2), the region where the light-shielding portion is formed (the region B in FIG. 2), and the region where the light-transmitting portion is formed (the region C in FIG. 2). A resist pattern 203a remaining in the resist film is formed (Fig. 2(b)).
繼而，將所形成之抗蝕圖案203a作為掩膜(mask)，對遮光膜202進行蝕刻(第1蝕刻)，而於與遮光部(B區域)及透光部(C區域)相對應之區域形成遮光膜圖案202a(圖2(c))。繼而，將抗蝕圖案203a去除(圖2(d))。 Then, the formed resist pattern 203a is used as a mask to etch the light-shielding film 202 (first etching), and is in a region corresponding to the light-shielding portion (B region) and the light-transmitting portion (C region). The light shielding film pattern 202a is formed (Fig. 2(c)). Then, the resist pattern 203a is removed (Fig. 2(d)).
藉由以上所說明之第一次光微影步驟，而劃定與半透光部相對應之區域(A區域)，於該時點未劃定遮光部(B區域)及透光部(C區域)。 The region corresponding to the semi-transmissive portion (A region) is defined by the first photolithography step described above, at which point the shading portion (B region) and the transmissive portion (C region are not defined) ).
繼而，於藉由以上步驟而獲得之附有遮光膜圖案之基板之整個面成膜半透光膜204(圖2(e))。藉此，形成A區域之半透光部。 Then, the semi-transmissive film 204 is formed on the entire surface of the substrate with the light-shielding film pattern obtained by the above steps (Fig. 2(e)). Thereby, the semi-transmissive portion of the A region is formed.
進而，於半透光膜204之整個面塗佈正型抗蝕劑而形成抗蝕膜205(圖2(f))，並進行繪圖(第2繪圖)。於顯影後，在透光部(C區域)去除抗蝕膜205，而於遮光部(B區域)及半透光部(A區域)形成抗蝕膜殘存之抗蝕圖案205a(圖2(g))。 Further, a positive resist is applied to the entire surface of the semi-transmissive film 204 to form a resist film 205 (Fig. 2(f)), and a drawing (second drawing) is performed. After the development, the resist film 205 is removed in the light transmitting portion (C region), and the resist pattern 205a remaining in the resist film is formed in the light shielding portion (B region) and the semi-light transmitting portion (A region) (FIG. 2 (g) )).
將所形成之抗蝕圖案205a作為掩膜，對成為透光部之C區域之半 透光膜204與遮光膜圖案202a進行蝕刻(第2蝕刻)而將其等去除(圖2(h))。此處，半透光膜與遮光膜之蝕刻特性相同或近似，藉此可連續地進行蝕刻。繼而，於上述第2蝕刻之後，去除抗蝕圖案205a而完成灰階光罩300(圖2(i))。 Using the formed resist pattern 205a as a mask, the half of the C region which becomes the light transmitting portion The light-transmissive film 204 and the light-shielding film pattern 202a are etched (second etching), and are removed (FIG. 2(h)). Here, the etching characteristics of the semi-transmissive film and the light-shielding film are the same or similar, whereby etching can be continuously performed. Then, after the second etching, the resist pattern 205a is removed to complete the gray scale mask 300 (Fig. 2(i)).
根據以上所說明之製造方法，藉由2次光微影步驟，將遮光膜及半透光膜分別圖案化，而製造包含遮光部、透光部、及半透光部之灰階光罩。 According to the manufacturing method described above, the light-shielding film and the semi-transmissive film are each patterned by the secondary photolithography step, and a gray scale mask including a light shielding portion, a light transmitting portion, and a semi-light transmitting portion is produced.
於該製造方法中，有如下優勢：由於以第一次光微影步驟確保半透光部之圖案尺寸及半透光部與遮光部之位置關係，故而可不產生圖案偏差地形成TFT(Thin Film Transistor，薄膜電晶體)之特性上重要之通道部。 In the manufacturing method, since the pattern size of the semi-transmissive portion and the positional relationship between the semi-transmissive portion and the light-shielding portion are ensured by the first photolithography step, the TFT can be formed without pattern deviation (Thin Film) Transistor, thin film transistor) is an important channel part of the characteristics.
且說，於搭載有液晶或有機EL之顯示裝置中，在圖像之亮度、清晰度、反應速度、消耗電力之減少、進而成本降低等諸多方面，要求技術之進一步改良。於該狀況下，對用以製造該等器件之光罩亦要求如下功能：不僅精緻地形成較先前更微細之圖案，而且能以低成本將圖案轉印至被轉印體(面板基板等)。又，所需之轉印用圖案之設計亦多樣化、複雜化。 In addition, in a display device equipped with a liquid crystal or an organic EL, further improvement of the technique is required in terms of brightness, sharpness, reaction speed, power consumption reduction, and cost reduction of the image. In this case, the photomask for manufacturing the devices also requires a function of not only delicately forming a finer pattern than before, but also transferring the pattern to the object to be transferred (such as a panel substrate) at low cost. . Moreover, the design of the transfer pattern required is also diverse and complicated.
於此種狀況下，本發明者等人藉由研究而發現了新課題。 Under such circumstances, the inventors and the like discovered a new subject by research.
根據上述專利文獻1之步驟，利用第2蝕刻，將半透光膜及遮光膜之2片膜連續地以1個步驟蝕刻去除(圖2(h))。此處，例如若遮光膜為以鉻(Cr)為主成分之膜，半透光膜為包含鉻化合物者，且將前者之蝕刻所需時間設為X(例如50秒)，將後者之蝕刻所需時間設為Y(例如10秒)，則於第2蝕刻中，必需(X+Y)之蝕刻時間(例如60秒)，時間較對遮光膜或半透光膜之單一膜進行蝕刻之情形時長。 According to the procedure of Patent Document 1, two films of the semi-transmissive film and the light-shielding film are continuously removed by etching in one step by using the second etching (Fig. 2(h)). Here, for example, if the light-shielding film is a film containing chromium (Cr) as a main component, and the semi-transmissive film is a chromium-containing compound, and the time required for etching of the former is X (for example, 50 seconds), the latter is etched. When the required time is set to Y (for example, 10 seconds), in the second etching, an etching time of (X+Y) (for example, 60 seconds) is required, and etching is performed on a single film of the light shielding film or the semi-transmissive film. The length of the situation.
再者，此處，作為蝕刻方法，應用濕式蝕刻。因為濕式蝕刻可極其有利地應用於顯示裝置製造用光罩。其原因在於：對面積相對較 大(一邊為300mm以上)且存在多種尺寸之基板之顯示裝置製造用光罩而言，與必需真空裝置之乾式蝕刻相比，濕式蝕刻於設備方面及效率方面均非常有利。 Here, as the etching method, wet etching is applied. The wet etching can be extremely advantageously applied to a photomask for display device manufacturing. The reason is: relatively large area In the case of a photomask for manufacturing a display device having a large number of substrates (300 mm or more on one side) and having a plurality of substrates, wet etching is extremely advantageous in terms of equipment and efficiency as compared with dry etching of a vacuum apparatus.
濕式蝕刻之等向蝕刻之性質較強，不僅向被蝕刻膜之深度方向進行蝕刻，亦向與被蝕刻膜面平行之方向進行蝕刻。一般而言，於必需較長之蝕刻時間之情形時，有蝕刻量之面內不均擴大之傾向，故而隨著濕式蝕刻之時間變長，側面蝕刻量增加，且該量之面內之不均亦增加。因此，於上述情形時，所形成之轉印用圖案之線寬(CD，Critical Dimension(臨界尺寸)，以下以圖案之線寬之含意使用)精度容易劣化。即，必需上述(X+Y)(秒)之第2蝕刻於該方面存在問題。又，隨著蝕刻時間變長，蝕刻劑之使用量亦增加，且包含重金屬之廢液處理之負擔亦增加。 The isotropic etching of the wet etching is strong, and etching is performed not only in the depth direction of the film to be etched but also in a direction parallel to the surface of the film to be etched. In general, when a long etching time is required, there is a tendency that the in-plane unevenness of the etching amount increases, so that as the time of the wet etching becomes longer, the amount of side etching increases, and the amount of the amount is in-plane. Unevenness also increased. Therefore, in the above case, the line width of the formed transfer pattern (CD, Critical Dimension, hereinafter, the meaning of the line width of the pattern) is easily deteriorated. That is, it is necessary that the second etching of (X+Y) (seconds) described above has a problem in this respect. Further, as the etching time becomes longer, the amount of the etchant used also increases, and the burden of disposal of the waste liquid containing heavy metals also increases.
又，於轉印用圖案之設計複雜化，存在微細尺寸(CD)之圖案之情形時，本發明者等人進而著眼於產生如下問題之可能性。 Further, in the case where the design of the transfer pattern is complicated and there is a pattern of a fine size (CD), the inventors of the present invention have further focused on the possibility of causing the following problems.
於表示上述專利文獻1之製造方法之圖2(i)中，形成有包含半透光部與遮光部鄰接之部分之圖案，但除此種圖案以外，於近來之顯示裝置製造用光罩之轉印用圖案中包含更複雜之圖案。例如，有對除具有上述鄰接部分以外還具有透光部與半透光部鄰接之部分之轉印用圖案等之需求。 In Fig. 2(i) showing the manufacturing method of the above-mentioned Patent Document 1, a pattern including a portion in which the semi-transmissive portion and the light-shielding portion are adjacent is formed, but in addition to such a pattern, the mask for manufacturing a display device has recently been used. The transfer pattern contains more complicated patterns. For example, there is a need for a transfer pattern or the like having a portion in which the light transmitting portion and the semi-transmissive portion are adjacent to each other in addition to the adjacent portion.
因此，例如考慮於上述圖2所示之轉印用圖案中進而存在透光部與半透光部鄰接之部分之情形(參照圖3(i))。此處，在圖3中之A區域為半透光部、B區域為遮光部之方面，與上述圖2之步驟相同。又，於圖3中，將鄰接於遮光部之透光部設為C1區域，將鄰接於半透光部之透光部設為C2區域。 Therefore, for example, it is considered that the transfer pattern shown in FIG. 2 has a portion in which the light transmitting portion and the semi-light transmitting portion are adjacent to each other (see FIG. 3(i)). Here, in the case where the region A in FIG. 3 is a semi-transmissive portion and the region B is a light-shielding portion, it is the same as the step of FIG. 2 described above. Moreover, in FIG. 3, the light transmitting portion adjacent to the light shielding portion is referred to as a C1 region, and the light transmitting portion adjacent to the semi-light transmitting portion is referred to as a C2 region.
圖3(a)~(d)之步驟(第1光微影步驟)分別對應於圖2(a)~(d)，圖3(e)~(i)之步驟(第2光微影步驟)分別對應於圖2(e)~(i)。此處，於表 示第2蝕刻之圖3(h)之步驟中，於成為透光部C1之區域，將半透光膜204與遮光膜圖案202a蝕刻去除，於成為透光部C2之區域，僅將半透光膜204蝕刻去除。 The steps (Fig. 3(a) to (d) of Fig. 3 (the first photolithography step) correspond to the steps of Figs. 2(a) to (d), respectively, Figs. 3(e) to (i) (the second photolithography step) ) corresponds to Figures 2(e) to (i) respectively. Here, in the table In the step of FIG. 3(h) showing the second etching, the semi-transmissive film 204 and the light-shielding film pattern 202a are etched and removed in a region to be the light-transmitting portion C1, and only a semi-transparent region is formed in the region of the light-transmitting portion C2. The photo film 204 is etched away.
此時，第2蝕刻之所需時間之設定變得困難。其原因在於：透光部C1之部分需要上述(X+Y)之蝕刻時間，而於成為透光部C2之部分，以相當於上述Y之蝕刻時間則足夠。 At this time, setting of the time required for the second etching becomes difficult. The reason for this is that the etching time of the above (X+Y) is required for the portion of the light transmitting portion C1, and the etching time corresponding to the above Y is sufficient for the portion to be the light transmitting portion C2.
因此，於用以形成透光部C1之蝕刻結束時，C2部分之蝕刻過度進行，而對抗蝕圖案205a下方之半透光膜204進行側面蝕刻(於圖3(h)中為以符號210表示之半透光膜之邊緣部分)。其結果為半透光膜圖案204a之尺寸與抗蝕圖案205a之尺寸不同。 Therefore, at the end of the etching for forming the light transmitting portion C1, the etching of the C2 portion is excessively performed, and the semi-transmissive film 204 under the resist pattern 205a is side-etched (indicated by symbol 210 in FIG. 3(h) The edge portion of the semi-transparent film). As a result, the size of the semi-transmissive film pattern 204a is different from the size of the resist pattern 205a.
因此，考慮預先使該側面蝕刻量反映於繪圖資料。即，作為繪圖資料，以蝕刻略微不足(蝕刻量較少之側)之方式，預先實施繪圖資料之定型(sizing)，進行側面蝕刻後，結果成為所設計之恰好之(如設計般之)尺寸。然而，即便採用該手法，亦不能解決上述蝕刻量之面內不均。 Therefore, it is considered that the amount of side etching is reflected in the drawing data in advance. In other words, as the drawing data, the sizing of the drawing data is performed in advance so that the etching is slightly insufficient (the side where the etching amount is small), and the side etching is performed, and the result is the designed (as designed) size. . However, even if this method is employed, the in-plane unevenness of the above etching amount cannot be solved.
進而，若將側面蝕刻量設為S μm(參照圖3(h))，則於上述定型中，必須預先以相對於欲獲得之透光部C2之尺寸窄相當於2S(μm)大小之方式進行繪圖。因此，繪圖資料之透光部C2之尺寸明顯變得微細，接近於繪圖裝置所保證之線寬極限，而不易獲得穩定之CD精度。又，無法形成具有小於2S(μm)之線寬之透光部C2。 Further, when the side etching amount is S μm (see FIG. 3( h )), it is necessary to preliminarily reduce the size of the light transmitting portion C2 to be obtained by a size corresponding to 2 S (μm) in the above-described molding. Make a drawing. Therefore, the size of the light transmitting portion C2 of the drawing data is remarkably fine, which is close to the line width limit guaranteed by the drawing device, and it is not easy to obtain stable CD precision. Further, the light transmitting portion C2 having a line width of less than 2 S (μm) cannot be formed.
因此，可知於圖3之方法中，於欲製造更微細、且更高之CD精度之多調式光罩之情形時，仍存在課題。 Therefore, it can be seen that in the method of FIG. 3, there is still a problem in the case of a multi-tone mask for producing a finer and higher CD precision.
且說，於圖3(b)之第1繪圖中，對用以形成透光部C1之繪圖資料引入定型。即，以在第1、第2繪圖之間相互產生對準偏差為前提，以產生較所期望之透光部C1之尺寸(參照圖3(b)之縱虛線)小相當於考慮到對準偏差之尺寸量之抗蝕圖案之開口之方式(以蝕刻不足之方式)進 行繪圖。若不進行該操作，則會產生如下不良情況：因第2繪圖、顯影而導致於成為透光部C1之區域內之一部分殘存抗蝕圖案，從而形成不需要之半透光部。以下，參照圖4對上述情況進行說明。 Further, in the first drawing of Fig. 3(b), the drawing data for forming the light transmitting portion C1 is introduced and shaped. In other words, it is premised that the first and second patterns are misaligned with each other, so that the size of the desired light-transmitting portion C1 (see the vertical dotted line in FIG. 3(b)) is smaller than that in consideration of alignment. The way of the opening of the resist pattern of the amount of deviation (in the form of insufficient etching) Line drawing. If this operation is not performed, there is a problem in that a resist pattern remains in one of the regions which become the light transmitting portion C1 due to the second drawing and development, and an unnecessary semi-transmissive portion is formed. The above will be described below with reference to Fig. 4 .
即，藉由圖4(a)~(d)之第1光微影步驟於透明基板201上形成遮光膜圖案202a，且於其等上形成半透光膜204(圖4(e))。進而，於半透光膜204上塗佈光阻劑而形成抗蝕膜205(圖4(f))。 That is, the light-shielding film pattern 202a is formed on the transparent substrate 201 by the first photolithography step of FIGS. 4(a) to 4(d), and the semi-transmissive film 204 is formed thereon (FIG. 4(e)). Further, a photoresist is applied onto the semi-transmissive film 204 to form a resist film 205 (Fig. 4(f)).
繼而，如圖4(f)所示，進行用以於C1區域及C2區域形成透光部之第2繪圖，並進行顯影。然而，由於實際上在第1繪圖與第2繪圖之間會產生一定程度之對準偏差，故而不會於圖4(f)中以縱虛線表示之恰好之(如圖所示之)位置形成抗蝕圖案205a之開口，而於圖4(g)之以橢圓虛線表示之位置形成抗蝕圖案之開口邊緣。 Then, as shown in FIG. 4(f), a second drawing for forming a light transmitting portion in the C1 region and the C2 region is performed, and development is performed. However, since a certain degree of alignment deviation is actually generated between the first drawing and the second drawing, it is not formed in the position (as shown) which is indicated by a vertical broken line in FIG. 4(f). The opening of the resist pattern 205a is formed, and the opening edge of the resist pattern is formed at a position indicated by an elliptical dotted line in Fig. 4(g).
繼而，基於該抗蝕圖案205a進行半透光膜204之蝕刻去除(圖4(h))，當將抗蝕圖案205a去除時(圖4(i))，會產生於應成為透光部之位置(C1)殘存不需要之半透光膜206之不良情況。 Then, etching removal of the semi-transmissive film 204 is performed based on the resist pattern 205a (FIG. 4(h)). When the resist pattern 205a is removed (FIG. 4(i)), it is generated as a light transmitting portion. The position (C1) remains a problem of the unnecessary semi-transmissive film 206.
作為實際問題，難以使2次繪圖所形成之圖案位置完全一致，故而需要圖3(b)所示之定型，於此情形時，結果會產生因濕式側面蝕刻引起之上述問題。 As a practical matter, it is difficult to completely match the pattern positions formed by the two times of drawing, and therefore the shape shown in Fig. 3(b) is required. In this case, the above-mentioned problem due to wet side etching occurs.
如根據以上情況所理解般，於應用濕式蝕刻形成具有透光部與遮光部之交界及半透光部與遮光部之交界的轉印用圖案之情形時，期望不產生因濕式蝕刻及對準偏差導致之圖案劣化，而提高透光部(C1及C2)之CD精度。 As can be understood from the above, when wet etching is used to form a transfer pattern having a boundary between the light transmitting portion and the light shielding portion and a boundary between the semi-light transmitting portion and the light shielding portion, it is desirable that no wet etching occurs. The pattern caused by the deviation is deteriorated, and the CD precision of the light transmitting portions (C1 and C2) is improved.
因此，本發明之目的在於提供一種不產生因濕式蝕刻及對準偏差導致之圖案劣化，而高精度地形成具有透光部與遮光部之交界及半透光部與遮光部之交界的轉印用圖案，從而製造顯示裝置製造用之多調式光罩之方法。 Accordingly, an object of the present invention is to provide a high-precision formation of a boundary between a light-transmitting portion and a light-shielding portion and a boundary between a semi-transmissive portion and a light-shielding portion without causing pattern deterioration due to wet etching and misalignment. A method of printing a pattern to manufacture a multi-tone mask for manufacturing a display device.
本發明之主旨如下所述。 The gist of the present invention is as follows.
<1>一種多調式光罩之製造方法，該多調式光罩具有轉印用圖案，該轉印用圖案包括藉由將形成於透明基板上之遮光膜及半透光膜分別圖案化而形成之遮光部、半透光部、及透光部；該多調式光罩之製造方法之特徵在於：上述轉印用圖案包含上述遮光部與上述透光部鄰接之部分、及上述半透光部與上述透光部鄰接之部分；且該多調式光罩之製造方法包括：準備於上述透明基板上形成有上述遮光膜之空白光罩之步驟；將除成為上述遮光部之區域以外之區域之遮光膜蝕刻去除而形成上述遮光部之步驟；於形成有上述遮光部之上述透明基板上，成膜上述半透光膜之步驟；抗蝕圖案形成步驟，其係於上述半透光膜上，在包含成為上述透光部之區域在內之區域形成具有開口之抗蝕圖案；半透光膜蝕刻步驟，其係將上述抗蝕圖案作為掩膜，將上述半透光膜進行蝕刻；及將上述抗蝕圖案去除之步驟；且於上述抗蝕圖案形成步驟中，形成具有如下開口之抗蝕圖案，該開口之尺寸係對成為與上述遮光部鄰接之上述透光部之區域之尺寸加上對準容限所得之尺寸；於上述半透光膜蝕刻步驟中，在上述抗蝕圖案之開口內，成為上述透光部之區域之上述透明基板露出，且於上述遮光部之與上述透光部鄰接之邊緣部分，上述遮光膜上之上述半透光膜於厚度方向上被蝕刻至少一部分。 <1> A method of manufacturing a multi-mode mask having a transfer pattern comprising forming a light-shielding film and a semi-transmissive film formed on a transparent substrate, respectively The light-shielding portion, the semi-transmissive portion, and the light-transmitting portion, wherein the transfer pattern includes a portion of the light-shielding portion adjacent to the light-transmitting portion, and the semi-transmissive portion a portion adjacent to the light transmitting portion; and the method for manufacturing the multi-mode mask includes: a step of preparing a blank mask on which the light shielding film is formed on the transparent substrate; and a region other than the region to be the light shielding portion a step of etching the light-shielding film to form the light-shielding portion; a step of forming the semi-transmissive film on the transparent substrate on which the light-shielding portion is formed; and a resist pattern forming step on the semi-transmissive film Forming a resist pattern having an opening in a region including a region to be the light transmitting portion; and a semi-transmissive film etching step of etching the semi-transmissive film by using the resist pattern as a mask And a step of removing the resist pattern; and in the resist pattern forming step, forming a resist pattern having an opening, the size of the opening being a region of the light transmitting portion adjacent to the light blocking portion a size obtained by aligning the tolerance; in the semi-transmissive film etching step, the transparent substrate in the region of the light-transmitting portion is exposed in the opening of the resist pattern, and is formed in the light-shielding portion The semi-transmissive film on the light shielding film is etched at least in part in the thickness direction at an edge portion adjacent to the light transmitting portion.
<2>如<1>之多調式光罩之製造方法，其特徵在於：於上述 半透光膜蝕刻步驟中，上述半透光膜於厚度方向上經蝕刻至少一部分之上述遮光部之邊緣部分相對於上述多調式光罩之曝光之光之光學密度(OD，Optical Density)為2以上。 <2> A method of manufacturing a multi-mode mask according to <1>, characterized in that: In the semi-transmissive film etching step, the semi-transmissive film is etched in the thickness direction, and at least a part of the edge portion of the light-shielding portion has an optical density (OD, Optical Density) of 2 with respect to the exposed light of the multi-mode mask. the above.
<3>如<1>或<2>之多調式光罩之製造方法，其特徵在於：上述半透光膜及上述遮光膜包含可藉由相同蝕刻液予以蝕刻之材料。 <3> The method of manufacturing a multi-mode mask according to <1> or <2>, wherein the semi-transmissive film and the light-shielding film comprise a material which can be etched by the same etching liquid.
<4>如<1>至<3>中任一項之多調式光罩之製造方法，其特徵在於：上述半透光膜及上述遮光膜包含可藉由相同蝕刻液予以蝕刻之材料，且上述半透光膜與上述遮光膜相對於上述相同蝕刻液之蝕刻速率比為5：1~50：1。 The method for manufacturing a multi-modulation reticle according to any one of the aspects of the present invention, wherein the semi-transmissive film and the light-shielding film comprise a material which can be etched by the same etching solution, and The etching rate ratio of the semi-transmissive film to the light-shielding film with respect to the same etching liquid is 5:1 to 50:1.
<5>如<1>至<4>中任一項之多調式光罩之製造方法，其特徵在於：上述對準容限為0.25~0.75μm。 The method of manufacturing a multi-mode mask according to any one of <1> to <4> wherein the alignment tolerance is 0.25 to 0.75 μm.
<6>如<1>至<5>中任一項之多調式光罩之製造方法，其特徵在於：上述半透光膜與上述遮光膜之蝕刻所需時間之比為1：5~1：50。 The method of manufacturing a multi-modulation reticle according to any one of <1> to <5> wherein the ratio of the time required for etching the semi-transmissive film to the light-shielding film is 1:5 to 1 :50.
<7>一種多調式光罩，其具有轉印用圖案，該轉印用圖案包括藉由將形成於透明基板上之遮光膜及半透光膜分別圖案化而形成之遮光部、半透光部、及透光部；該多調式光罩之特徵在於：上述轉印用圖案包含上述遮光部與上述透光部鄰接之部分、及上述半透光部與上述透光部鄰接之部分，於上述透光部露出上述透明基板，於上述半透光部露出形成於上述透明基板上之上述半透光膜，上述遮光部包含上述遮光膜與上述半透光膜積層而成之積層部分、及上述遮光膜上之上述半透光膜於厚度方向上經蝕刻至少一部分之邊緣部分，上述邊緣部分鄰接於上述透光部，其寬度為0.25~0.75μm，並且其相對於曝光之光之光學密度(OD)為2以上。 <7> A multi-mode mask having a transfer pattern comprising a light-shielding portion formed by patterning a light-shielding film and a semi-transmissive film formed on a transparent substrate, respectively, and a semi-transparent And the light transmissive portion, wherein the transfer pattern includes a portion of the light shielding portion adjacent to the light transmitting portion, and a portion of the light transmitting portion adjacent to the light transmitting portion The light-transmitting portion exposes the transparent substrate, and the semi-transmissive film is exposed on the transparent substrate in the semi-transmissive portion, and the light-shielding portion includes a laminated portion in which the light-shielding film and the semi-transmissive film are laminated, and The semi-transmissive film on the light-shielding film is etched at least a portion of an edge portion in a thickness direction, and the edge portion is adjacent to the light-transmitting portion, and has a width of 0.25 to 0.75 μm, and an optical density thereof with respect to the exposed light. (OD) is 2 or more.
<8>如<7>之多調式光罩，其特徵在於：上述轉印用圖案包括夾於上述半透光部之間之上述透光部、及夾於上述遮光部之間之上述透光部。 <8> The multi-modulation photomask according to <7>, wherein the transfer pattern includes the light transmitting portion sandwiched between the semi-transmissive portions, and the light transmission sandwiched between the light shielding portions unit.
<9>如<7>或<8>之多調式光罩，其特徵在於：上述半透光膜及上述遮光膜包含可藉由相同蝕刻液予以蝕刻之材料。 <9> The multi-mode mask of <7> or <8>, wherein the semi-transmissive film and the light-shielding film comprise a material which can be etched by the same etching liquid.
<10>如<8>或<9>之多調式光罩，其特徵在於：上述半透光膜及上述遮光膜包含可藉由相同蝕刻液予以蝕刻之材料，且上述半透光膜與上述遮光膜相對於上述相同蝕刻液之蝕刻速率比為5：1~50：1。 <10> The multi-mode reticle of <8> or <9>, wherein the semi-transmissive film and the light-shielding film comprise a material etchable by the same etching liquid, and the semi-transmissive film and the above The etching rate ratio of the light shielding film to the same etching liquid described above is 5:1 to 50:1.
<11>一種顯示裝置之製造方法，其特徵在於包括如下步驟：準備如<7>至<10>中任一項之多調式光罩；及藉由曝光裝置對上述多調式光罩曝光，而將上述轉印用圖案轉印至被轉印體。 <11> A method of manufacturing a display device, comprising the steps of: preparing a multi-tone mask according to any one of <7> to <10>; and exposing the multi-mode mask by an exposure device, and The transfer pattern described above is transferred to the transfer target.
根據本發明，提供一種不產生因濕式蝕刻及對準偏差導致之圖案劣化，而高精度地形成具有透光部與遮光部之交界及半透光部與遮光部之交界的轉印用圖案，從而製造顯示裝置製造用之多調式光罩之方法。進而，根據本發明，提供一種利用例如該方法製造之多調式光罩、以及使用該多調式光罩之顯示裝置之製造方法。 According to the present invention, it is provided that a transfer pattern having a boundary between a light transmitting portion and a light blocking portion and a boundary between a semi-light transmitting portion and a light blocking portion is formed with high precision without causing pattern deterioration due to wet etching and misalignment. Thus, a method of manufacturing a multi-tone mask for manufacturing a display device. Further, according to the present invention, there is provided a multi-mode mask manufactured by the method, and a method of manufacturing a display device using the multi-mode mask.
10‧‧‧多調式光罩 10‧‧‧Multi-mode mask
12‧‧‧透明基板 12‧‧‧Transparent substrate
14‧‧‧遮光膜 14‧‧‧Shade film
14a‧‧‧遮光膜圖案 14a‧‧‧Shade film pattern
16‧‧‧半透光膜 16‧‧‧Semi-transparent film
16a‧‧‧半透光膜圖案 16a‧‧‧Semi-transparent film pattern
20‧‧‧半透光膜之邊緣部分 20‧‧‧ Edge portion of semi-transparent film
22‧‧‧遮光部之邊緣部分 22‧‧‧The edge of the sunscreen
24‧‧‧微量側面蝕刻部位 24‧‧‧ Trace side etching
30‧‧‧第1抗蝕膜 30‧‧‧1st resist film
30a‧‧‧第1抗蝕圖案 30a‧‧‧1st resist pattern
32‧‧‧第2抗蝕膜 32‧‧‧2nd resist film
32a‧‧‧第2抗蝕圖案 32a‧‧‧2nd resist pattern
200‧‧‧空白光罩 200‧‧‧ Blank mask
201‧‧‧透明基板 201‧‧‧Transparent substrate
202‧‧‧遮光膜 202‧‧‧Shade film
202a‧‧‧遮光膜圖案 202a‧‧‧Shade film pattern
203‧‧‧抗蝕膜 203‧‧‧Resist film
203a‧‧‧抗蝕圖案 203a‧‧‧resist pattern
204‧‧‧半透光膜 204‧‧‧Semi-transparent film
204a‧‧‧半透光膜圖案 204a‧‧‧ Semi-transparent film pattern
205‧‧‧抗蝕膜 205‧‧‧Resist film
205a‧‧‧抗蝕圖案 205a‧‧‧resist pattern
206‧‧‧不需要之半透光膜 206‧‧‧Unneeded semi-transparent film
210‧‧‧半透光膜之邊緣部分 210‧‧‧ Edge portion of semi-transparent film
300‧‧‧灰階光罩 300‧‧‧ Grayscale mask
A‧‧‧區域 A‧‧‧ area
B‧‧‧區域 B‧‧‧Area
C‧‧‧區域 C‧‧‧ area
C1‧‧‧區域 C1‧‧‧ area
C2‧‧‧區域 C2‧‧‧ area
Q‧‧‧對準容限 Q‧‧‧Alignment tolerance
S‧‧‧側面蝕刻量 S‧‧‧ side etching amount
圖1(a)-(i)係表示本發明之多調式光罩之製造方法之各步驟的模式圖。 1(a)-(i) are schematic views showing respective steps of a method of manufacturing a multi-tone mask of the present invention.
圖2(a)-(i)係表示專利文獻1所示之灰階光罩之製造方法之各步驟的模式圖。 2(a) to (i) are schematic views showing respective steps of a method of manufacturing a gray scale mask shown in Patent Document 1.
圖3(a)-(i)係表示具有包含透光部與半透光部鄰接之部分、及透光部與遮光部鄰接之部分之轉印用圖案的多調式光罩之製造方法之作為參考例之各步驟的模式圖。 3(a) to 3(i) show a method of manufacturing a multi-tone mask having a transfer pattern including a portion in which the light transmitting portion is adjacent to the semi-transmissive portion and a portion in which the light transmitting portion and the light blocking portion are adjacent to each other. A schematic diagram of each step of the reference example.
圖4(a)-(i)係表示不引入對準容限之情形時之多調式光罩之製造方法的作為參考例之各步驟的模式圖。 4(a) to (i) are schematic views showing respective steps of a reference example of a method of manufacturing a multi-mode mask when no alignment tolerance is introduced.
以下，依序對本發明之多調式光罩之製造方法(以下，亦簡稱為「本發明之製造方法」)、本發明之多調式光罩、及本發明之顯示裝置之製造方法進行說明。 Hereinafter, a method of manufacturing a multi-mode mask of the present invention (hereinafter, simply referred to as "the method of manufacturing the present invention"), a multi-mode mask of the present invention, and a method of manufacturing the display device of the present invention will be described.
本發明之多調式光罩係藉由經過上述[解決問題之技術手段]<1>中所說明之各步驟、即準備空白光罩之步驟、將空白光罩之遮光膜蝕刻去除而形成遮光部之步驟、成膜半透光膜之步驟、於該半透光膜上形成抗蝕圖案之步驟、對上述半透光膜進行蝕刻之步驟、及將上述抗蝕圖案去除之步驟而製造。以下，一面參照圖1一面對該等各步驟進行說明。 The multi-mode mask of the present invention forms a light-shielding portion by etching the light-shielding film of the blank mask by the steps described in the above [Technical Solution of Problem] <1>, that is, the step of preparing a blank mask. And a step of forming a semi-transmissive film, a step of forming a resist pattern on the semi-transmissive film, a step of etching the semi-transmissive film, and a step of removing the resist pattern. Hereinafter, each step will be described with reference to Fig. 1 .
圖1係表示本發明之多調式光罩之製造方法之各步驟的模式圖。於本發明之製造方法中，首先，準備在與欲製造之多調式光罩之平面形狀相對應之特定形狀之玻璃等透明基板12上形成遮光膜14而成之空白光罩。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the steps of a method of manufacturing a multi-mode mask of the present invention. In the manufacturing method of the present invention, first, a blank mask in which the light shielding film 14 is formed on the transparent substrate 12 such as glass of a specific shape corresponding to the planar shape of the multi-mode mask to be manufactured is prepared.
此處所使用之遮光膜14之素材並無特別限制，但較佳為可使用以下者。例如，作為遮光膜14之素材，除Cr或Cr化合物(Cr之氧化物、氮化物、碳化物、氮氧化物、碳氮氧化物等)以外，可較佳地使用Ta、Mo、W及其等之化合物(例如TaSi、MoSi、WSi或其等之氮化物、氮氧化物等金屬矽化物)等。又，該等材料既可單獨使用1種，亦可組合2種以上使用。 The material of the light shielding film 14 used herein is not particularly limited, but preferably the following can be used. For example, as a material of the light shielding film 14, in addition to Cr or a Cr compound (oxide, nitride, carbide, nitrogen oxide, carbon oxynitride, etc.) of Cr, it is preferable to use Ta, Mo, W and A compound such as a nitride such as TaSi, MoSi, WSi or the like, a metal halide such as an oxynitride, or the like. Further, these materials may be used alone or in combination of two or more.
遮光膜14可設為利用例如濺鍍法等公知之方法而形成於透明基板12上者。遮光膜14之膜厚係使遮光膜14對於針對所製造之多調式光 罩使用之曝光之光之光學濃度(OD)為2以上，較佳為3以上。 The light shielding film 14 can be formed on the transparent substrate 12 by a known method such as sputtering. The film thickness of the light shielding film 14 is such that the light shielding film 14 is directed to the multi-mode light produced The optical density (OD) of the exposed light used for the cover is 2 or more, preferably 3 or more.
進而，遮光膜14可於其表面側(與透明基板12相反之側)之表層具有抗反射層、蝕刻減速層等功能層。上述抗反射層可藉由抑制抗蝕膜繪圖光之反射而提高繪圖精度。又，上述蝕刻減速層具有如下效果：於下述半透光膜蝕刻步驟時，使遮光部之邊緣部分20(參照圖1(g))受到蝕刻之速度降低，而抑制該部分中之遮光膜14之損傷。 Further, the light shielding film 14 may have a functional layer such as an antireflection layer or an etching deceleration layer on the surface layer side (the side opposite to the transparent substrate 12). The anti-reflection layer can improve the drawing precision by suppressing the reflection of the resist film drawing light. Further, the etching deceleration layer has an effect of suppressing the etching speed of the edge portion 20 (see FIG. 1(g)) of the light shielding portion in the semi-transmissive film etching step described below, and suppressing the light shielding film in the portion. 14 damage.
上述抗反射層於例如遮光膜14含有Cr時，可設置為含有Cr之氧化物、氮化物、碳化物、氮氧化物、碳氮化物中之至少任一種之層。 When the light-shielding film 14 contains Cr, for example, the anti-reflection layer may be provided with a layer containing at least one of an oxide, a nitride, a carbide, an oxynitride, and a carbonitride of Cr.
又，上述蝕刻減速層只要為可由遮光膜14之蝕刻液蝕刻之材料、且為包含與遮光膜14之厚度方向內部之組成(或膜質)相比蝕刻變慢之組成(或膜質)者即可。例如，於遮光膜14由含有Cr之素材形成之情形時，作為蝕刻減速層之素材，可採用選自Cr之氧化物、氮化物、碳化物、氮氧化物、碳氮氧化物等之至少一種。又，抗反射層亦可兼作為蝕刻減速層。 Further, the etching deceleration layer may be a material which is etched by the etching liquid of the light shielding film 14 and which has a composition (or film quality) which is slower than the composition (or film quality) in the thickness direction of the light shielding film 14 . For example, when the light shielding film 14 is formed of a material containing Cr, as the material of the etching deceleration layer, at least one selected from the group consisting of oxides of Cr, nitrides, carbides, nitrogen oxides, and oxycarbonitrides may be used. . Further, the antireflection layer can also serve as an etching deceleration layer.
抗反射層及/或蝕刻減速層可設為以於遮光膜14之深度方向上形成為表層部分之組成與內側部分不同者。可於遮光膜14之表層部分與內側部分之間存在組成明確之交界，亦可於遮光膜14之深度方向上組成連續地或階段性地變化。 The antireflection layer and/or the etch deceleration layer may be formed such that the composition of the surface layer portion in the depth direction of the light shielding film 14 is different from the inner portion. A clear boundary may be formed between the surface layer portion and the inner portion of the light shielding film 14, and the composition may be continuously or stepwise changed in the depth direction of the light shielding film 14.
又，關於以上所說明之遮光膜14，即便處於將上述抗反射層或蝕刻減速層去除後之狀態，對於所要製造之多調式光罩使用之曝光之光之光學濃度OD通常仍為2以上，較佳為3以上。 Further, in the light-shielding film 14 described above, even in a state in which the anti-reflection layer or the etching-deceleration layer is removed, the optical density OD of the light used for the multi-mode mask to be manufactured is usually 2 or more. It is preferably 3 or more.
進而，可使用藉由例如公知之塗佈裝置(塗佈機，coater)於上述遮光膜14上塗佈光阻劑(以下，亦簡稱為抗蝕劑)而形成第1抗蝕膜30之附有抗蝕劑之空白光罩(參照圖1(a))。 Further, a photoresist (hereinafter, also simply referred to as a resist) is applied onto the light-shielding film 14 by, for example, a known coating device (coater) to form a first resist film 30. A blank mask with a resist (refer to Fig. 1 (a)).
於本步驟中，藉由形成遮光膜圖案14a，而劃定遮光部。 In this step, the light shielding portion is defined by forming the light shielding film pattern 14a.
具體而言，利用繪圖機對第1抗蝕膜30進行第1繪圖，繼而進行顯影，藉此形成第1抗蝕圖案30a(圖1(b))。亦可使用負型抗蝕劑，但此處設為使用正型抗蝕劑之態樣進行說明。 Specifically, the first resist film 30 is first drawn by a plotter, and then developed, whereby the first resist pattern 30a is formed (FIG. 1(b)). A negative resist may also be used, but the description is made here using a positive resist.
此時，以於成為遮光部之區域(圖1之B區域)殘存第1抗蝕膜，於成為除上述區域以外之區域之部分藉由顯影去除第1抗蝕膜，而於該部分第1抗蝕圖案30a開口之方式製作繪圖資料，且基於該繪圖資料進行繪圖。 At this time, the first resist film remains in the region (the region B in FIG. 1) in which the light shielding portion is formed, and the first resist film is removed by development in a portion other than the region, and the first resist film is removed in the portion. The drawing material is created in such a manner that the resist pattern 30a is opened, and drawing is performed based on the drawing material.
如上所述般形成第1抗蝕圖案30a，且將其作為掩膜對遮光膜14進行蝕刻(第1蝕刻)，藉此形成遮光膜圖案14a(圖1(c))。繼而，將第1抗蝕圖案30a去除。藉此，劃定遮光部(圖1(d))。 The first resist pattern 30a is formed as described above, and the light shielding film 14 is etched (first etching) as a mask, whereby the light shielding film pattern 14a is formed (FIG. 1(c)). Then, the first resist pattern 30a is removed. Thereby, the light shielding portion is defined (Fig. 1 (d)).
作為上述蝕刻，較佳為應用濕式蝕刻。可使用公知之蝕刻液，例如，若為含有Cr之遮光膜，則可使用硝酸鈰銨水溶液與過氯酸之混合水溶液。 As the above etching, wet etching is preferably applied. A known etching liquid can be used. For example, in the case of a light-shielding film containing Cr, a mixed aqueous solution of an aqueous solution of ammonium cerium nitrate and perchloric acid can be used.
於形成有遮光膜圖案14a之上述透明基板12上之整個面成膜半透光膜16(圖1(e))。半透光膜16之成膜可藉由濺鍍法等公知之方法實施。 The semi-transmissive film 16 is formed on the entire surface of the transparent substrate 12 on which the light-shielding film pattern 14a is formed (Fig. 1(e)). The film formation of the semi-transmissive film 16 can be carried out by a known method such as sputtering.
半透光膜16相對於用於多調式光罩之曝光之光之代表波長(包含於曝光之光之任意波長，例如i射線)的透過率可設為20~80%。透過率更佳為20~70%，進而較佳為30~60%。 The transmittance of the semi-transmissive film 16 with respect to the representative wavelength of light for exposure of the multi-mode mask (any wavelength included in the exposed light, for example, i-ray) can be set to 20 to 80%. The transmittance is preferably 20 to 70%, and more preferably 30 to 60%.
再者，存在半透光膜16具有之光透過率具有波長依存性之情形。因此，於將相對於i射線(365nm)之透過率設為Tr(i)(%)，將相對於g射線(436nm)之透過率設為Tr(g)(%)時，較佳為滿足0≦Tr(g)-Tr(i)≦5(%)。於此情形時，不論曝光裝置光源之個別差異或變動，均可穩定地維持轉印性。 Further, there is a case where the light transmittance of the semi-transmissive film 16 has a wavelength dependency. Therefore, when the transmittance with respect to the i-ray (365 nm) is Tr(i) (%) and the transmittance with respect to the g-ray (436 nm) is Tr (g) (%), it is preferable to satisfy 0≦Tr(g)-Tr(i)≦5(%). In this case, the transferability can be stably maintained irrespective of individual differences or variations in the light source of the exposure device.
又，半透光膜16相對於上述代表波長之相位偏移量較佳為90度 以下，更佳為60度以下。若相位偏移量接近於180度，則存在如下危險，即，於圖1中之A區域之半透光部與C2區域之透光部之交界處，曝光之光之相位反轉且相互干涉而使曝光之光抵消，從而於應形成於被轉印體上之抗蝕圖案之立體形狀產生不需要之凸部。 Further, the phase shift amount of the semi-transmissive film 16 with respect to the above representative wavelength is preferably 90 degrees. Hereinafter, it is more preferably 60 degrees or less. If the phase shift amount is close to 180 degrees, there is a risk that the phase of the exposed light is reversed and interferes with each other at the boundary between the semi-transmissive portion of the A region and the light transmitting portion of the C2 region in FIG. On the other hand, the light of the exposure is cancelled, so that the three-dimensional shape of the resist pattern to be formed on the object to be transferred generates an unnecessary convex portion.
作為該半透光膜16之素材，例示以下者。例如，作為半透光膜16之素材，可使用Cr化合物(Cr之氧化物、氮化物、碳化物、氮氧化物、碳氮氧化物等)、Si化合物(SiO2、SOG(Spin on Glass，旋塗式玻璃法))、金屬矽化物(TaSi、MoSi、WSi或其等之氮化物、氮氧化物等)、及TiON等Ti化合物。其等既可單獨使用1種，亦可組合2種以上使用。 The material of the semi-transmissive film 16 is exemplified as follows. For example, as a material of the semi-transmissive film 16, a Cr compound (such as an oxide of a Cr, a nitride, a carbide, an oxynitride, a oxycarbonitride, or the like) or a Si compound (SiO 2 or SOG (Spin on Glass) can be used. Spin-on glass method)), metal halide (TaSi, MoSi, WSi or the like nitride, nitrogen oxide, etc.), and Ti compound such as TiON. These may be used alone or in combination of two or more.
再者，對於遮光膜14與半透光膜16之材料，無論於相互有蝕刻選擇性之情形或於相互無蝕刻選擇性之情形時，本發明之製造方法均可應用。亦即，遮光膜14與半透光膜16既可對相互之蝕刻液具有耐性，亦可不具有耐性。然而，本發明之製造方法一方面發揮遮光膜14與半透光膜16無蝕刻選擇性之情形(亦即，可藉由相同之蝕刻液進行蝕刻之情形)之優勢，另一方面於解決課題之方面，其效果顯著，故而此處以該態樣進行說明。 Furthermore, the materials of the light-shielding film 14 and the semi-transmissive film 16 can be applied regardless of whether they have etching selectivity or when there is no etching selectivity. That is, the light shielding film 14 and the semi-transmissive film 16 may be resistant to each other or may not have resistance. However, the manufacturing method of the present invention exerts the advantage of the fact that the light-shielding film 14 and the semi-transmissive film 16 have no etching selectivity (that is, the case where etching can be performed by the same etching liquid), and on the other hand, solving the problem On the other hand, the effect is remarkable, and therefore, this aspect will be described here.
較佳為遮光膜14、半透光膜16相互包含相同之金屬之情形，又該金屬之較佳之例為Cr。 Preferably, the light shielding film 14 and the semi-transmissive film 16 contain the same metal from each other, and a preferred example of the metal is Cr.
然而，較佳為遮光膜14與半透光膜16之蝕刻速率互不相同。所謂蝕刻速率係指藉由蝕刻液進行蝕刻時之每單位時間之蝕刻量。蝕刻速率由構成各膜之素材之組成或膜質決定。例如，即便含有共用之金屬，因其他成分不同，亦可使對於共用之蝕刻液之蝕刻速率產生差異。 However, it is preferable that the etching rates of the light shielding film 14 and the semi-transmissive film 16 are different from each other. The etching rate refers to the amount of etching per unit time when etching is performed by an etching solution. The etching rate is determined by the composition or film quality of the materials constituting each film. For example, even if a metal is used in common, the etching rate of the common etching solution may be different depending on other components.
於本發明之製造方法中，較佳為對於相同之蝕刻液，半透光膜16之蝕刻速率(HR)大於遮光膜14之蝕刻速率(OR)。具體而言，較佳為 HR/OR≧5，更佳為50≧HR/OR≧5。亦即，更佳為半透光膜16與遮光膜14對於相同蝕刻液之蝕刻速率比為5：1~50：1。 In the manufacturing method of the present invention, it is preferable that the etching rate (HR) of the semi-transmissive film 16 is larger than the etching rate (OR) of the light-shielding film 14 for the same etching liquid. Specifically, it is preferably HR/OR≧5, more preferably 50≧HR/OR≧5. That is, it is more preferable that the etching rate ratio of the semi-transmissive film 16 and the light-shielding film 14 to the same etching liquid is 5:1 to 50:1.
進而，較佳為半透光膜16與遮光膜14之蝕刻所需時間之比為1：5~1：50。繼而，藉此可抑制利用第2蝕刻形成之遮光部之下述邊緣部分20之蝕刻量，且可維持藉由第2蝕刻形成之邊緣部分22之作為遮光部之遮光功能，因此較佳。 Further, it is preferable that the ratio of the time required for etching the semi-transmissive film 16 and the light shielding film 14 is 1:5 to 1:50. Then, it is preferable to suppress the etching amount of the edge portion 20 of the light-shielding portion formed by the second etching and to maintain the light-shielding function of the edge portion 22 formed by the second etching as the light-shielding portion.
於半透光膜16上塗佈光阻劑而形成第2抗蝕膜32(圖1(f))。 A photoresist is applied onto the semi-transmissive film 16 to form a second resist film 32 (Fig. 1 (f)).
繼而，如圖1(g)所示，進行繪圖(第2繪圖)，並進行顯影，藉此形成第2抗蝕圖案32a。第2抗蝕圖案32a於與成為透光部之區域C1及C2相對應之部分具有開口。 Then, as shown in FIG. 1(g), drawing (second drawing) is performed and development is performed, whereby the second resist pattern 32a is formed. The second resist pattern 32a has an opening at a portion corresponding to the regions C1 and C2 which are the light transmitting portions.
其中，於第2繪圖中，製作於遮光部與透光部鄰接之部分實施有對準容限Q(μm)大小之定型之繪圖資料，且基於該繪圖資料進行第2繪圖(參照圖1(f)之縱虛線)。對準容限Q之尺寸係基於由繪圖裝置引起之對準偏差之大小而決定，較佳為設為0.25~0.75μm(如圖1(g)所示般針對抗蝕圖案之單側)。或者，於對準優異之繪圖裝置中，對準容限Q之尺寸亦可設為0.2~0.5μm。 In the second drawing, the drawing data having the size of the alignment tolerance Q (μm) is formed in a portion adjacent to the light-shielding portion and the light-transmitting portion, and the second drawing is performed based on the drawing data (refer to FIG. 1 (refer to FIG. 1 f) The vertical dotted line). The size of the alignment tolerance Q is determined based on the magnitude of the alignment deviation caused by the drawing device, and is preferably set to 0.25 to 0.75 μm (one side of the resist pattern as shown in Fig. 1(g)). Alternatively, in an excellent alignment device, the alignment tolerance Q may be set to 0.2 to 0.5 μm.
再者，於本步驟中，對於成為與半透光部鄰接之透光部之區域(圖1中之C2區域)，無需考慮了對準容限之定型，可製作符合欲獲得之透光部之尺寸之繪圖資料。其原因在於，C2區域之透光部之尺寸僅由第2繪圖決定。 Further, in this step, in the region (the C2 region in FIG. 1) which is a light-transmitting portion adjacent to the semi-transmissive portion, it is possible to prepare the light-transmitting portion in accordance with the desired portion without considering the alignment tolerance. Drawing data of the size. The reason for this is that the size of the light transmitting portion of the C2 region is determined only by the second drawing.
或者，亦可考慮伴隨濕式蝕刻之微小之側面蝕刻量(例如0.1μm以下，參照圖1(h)之微量側面蝕刻部位24)，並將其反映於繪圖資料。於此情形時，由於側面蝕刻量較小，故而於本發明中亦不會產生面內不均擴大之缺點。 Alternatively, a small side etching amount (for example, 0.1 μm or less, see the trace side etching portion 24 of FIG. 1(h)) accompanying the wet etching may be considered and reflected in the drawing data. In this case, since the amount of side etching is small, the disadvantage of in-plane unevenness expansion does not occur in the present invention.
若利用上述方法，則不存在因長時間之蝕刻而導致產生CD精度 劣化之步驟。進而，由於無需將較大之側面蝕刻量估計在內而預先於不足側修正透光部之繪圖資料，故而消除微細之圖案被修正為無法解像之寬度之危險。 If the above method is used, there is no CD accuracy due to long-time etching. The step of degradation. Further, since the drawing data of the light transmitting portion is corrected in advance on the insufficient side without estimating the large side etching amount, the risk that the fine pattern is corrected to the width of the unsolvable image is eliminated.
於形成第2抗蝕圖案32a之後，將該抗蝕圖案作為掩膜，對半透光膜16露出之部分進行蝕刻而將其去除(第2蝕刻，圖1(h))。蝕刻時間係以將圖1中之C2區域之半透光膜16蝕刻去除之時間為基準。亦即，並非如圖3(h)般進行(X+Y)(秒)之蝕刻，而以Y(秒)左右即可。因此，不會產生如先前技術之由側面蝕刻導致之嚴重問題。 After the second resist pattern 32a is formed, the resist pattern is used as a mask, and the exposed portion of the semi-transmissive film 16 is etched and removed (second etching, FIG. 1(h)). The etching time is based on the time during which the semi-transmissive film 16 of the C2 region in FIG. 1 is etched away. That is, etching of (X + Y) (seconds) is not performed as shown in Fig. 3 (h), and it is about Y (seconds). Therefore, serious problems caused by side etching as in the prior art are not caused.
繼而，藉由上述蝕刻，而形成C2區域之透光部，並且亦將C1區域之半透光膜蝕刻去除，而形成透光部。此時，由於鄰接於C1區域(透光部)之B區域(遮光部)之邊緣部分20自第2抗蝕圖案32a露出，故而該部分之半透光膜16於厚度方向上至少一部分被蝕刻，而膜厚減少(圖1(h))。 Then, the light-transmitting portion of the C2 region is formed by the above etching, and the semi-transmissive film of the C1 region is also etched away to form a light transmitting portion. At this time, since the edge portion 20 of the B region (light shielding portion) adjacent to the C1 region (light transmitting portion) is exposed from the second resist pattern 32a, at least a portion of the portion of the semi-transmissive film 16 is etched in the thickness direction. And the film thickness is reduced (Fig. 1(h)).
然而，由於蝕刻時間係如上所述般設為去除半透光膜16所需之時間，故而半透光膜16之下方之遮光膜圖案14a幾乎不會受到蝕刻之影響，而不會造成實質性損傷。 However, since the etching time is set as described above for the time required to remove the semi-transmissive film 16, the light-shielding film pattern 14a under the semi-transmissive film 16 is hardly affected by the etching, and does not cause substantial damage.
又，即便遮光膜14略微受到損傷，亦可維持其光學性能，故而無不良情況。所謂該光學性能係對於曝光之光之光學密度(OD)，為2以上，較佳為3以上。更佳為使遮光膜14之蝕刻速率小於半透光膜16之蝕刻速率。 Moreover, even if the light-shielding film 14 is slightly damaged, the optical performance can be maintained, so that there is no problem. The optical performance is 2 or more, preferably 3 or more, for the optical density (OD) of the exposed light. More preferably, the etching rate of the light shielding film 14 is made smaller than the etching rate of the semi-transmissive film 16.
作為以上所說明之半透光膜16之蝕刻，就顯示裝置用之多調式光罩之製造時的製造成本之觀點而言，較佳地採用濕式蝕刻。於半透光膜16含有Cr之情形時，作為其蝕刻液，可使用硝酸鈰銨水溶液與過氯酸之混合水溶液。 As the etching of the semi-transmissive film 16 described above, wet etching is preferably used from the viewpoint of the manufacturing cost in the manufacture of the multi-mode mask for a display device. When the semi-transmissive film 16 contains Cr, a mixed aqueous solution of an aqueous solution of cerium ammonium nitrate and perchloric acid can be used as the etching liquid.
於半透光膜之蝕刻步驟後，將第2抗蝕圖案32a去除，而完成本發明之多調式光罩10(圖1(i))。該多調式光罩10於透明基板12上，具有藉由將遮光膜14及半透光膜16分別圖案化而形成之遮光部、透光部、半透光部。 After the etching step of the semi-transmissive film, the second resist pattern 32a is removed to complete the multi-tone mask 10 of the present invention (Fig. 1(i)). The multi-mode mask 10 has a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion formed by patterning the light-shielding film 14 and the semi-transmissive film 16 on the transparent substrate 12.
於本發明之多調式光罩10中，B區域包含遮光膜與半透光膜積層之積層部分、及於其透光部側之邊緣至少半透光膜表面膜減少而成之邊緣部分22。A區域係於透明基板12上形成半透光膜圖案16a而成。而且，於C1及C2區域，透明基板12露出。以上之B區域、A區域、及C1、C2區域分別形成多調式光罩10中之遮光部、半透光部、及透光部，本發明之多調式光罩具有具備其等之轉印用圖案。 In the multi-mode mask 10 of the present invention, the B region includes a laminated portion of the light-shielding film and the semi-transmissive film layer, and an edge portion 22 at which the surface of the light-transmitting portion is reduced at least by the semi-transmissive film surface film. The A region is formed by forming a semi-transmissive film pattern 16a on the transparent substrate 12. Further, in the regions C1 and C2, the transparent substrate 12 is exposed. The B-zone, the A-region, and the C1 and C2 regions respectively form the light-shielding portion, the semi-transmissive portion, and the light-transmitting portion of the multi-mode mask 10, and the multi-tone mask of the present invention has the transfer for use thereof. pattern.
本發明者等人認為利用本發明之製造方法製造而成之多調式光罩之遮光部之尺寸精度極高。其原因在於：如上所述般於第2蝕刻中無需長時間之蝕刻，除此以外，藉由第1繪圖實質上劃定遮光部之尺寸。於上述第1繪圖時，較佳為可使用表面具有抗反射層之遮光膜進行，故而與將半透光膜置於上層之狀態下之雷射繪圖相比，亦可獲得較高之精度。 The inventors of the present invention considered that the light-shielding portion of the multi-tone mask manufactured by the manufacturing method of the present invention has extremely high dimensional accuracy. This is because, as described above, it is not necessary to etch for a long time in the second etching, and the size of the light shielding portion is substantially defined by the first drawing. In the above-described first drawing, it is preferable to use a light-shielding film having an anti-reflection layer on the surface, so that higher precision can be obtained than in the laser drawing in which the semi-transmissive film is placed on the upper layer.
再者，於不損及本發明之效果之範圍內，除遮光膜或半透光膜以外，亦可進一步設置光學膜或功能膜(蝕刻終止膜等)。 Further, in addition to the light shielding film or the semi-transmissive film, an optical film or a functional film (etching stopper film or the like) may be further provided insofar as the effect of the present invention is not impaired.
本發明之多調式光罩10如上所述般具備包含透光部、半透光部及遮光部之轉印用圖案。若通過該多調式光罩10對形成有光阻膜之被轉印體進行曝光，則該轉印用圖案被轉印至被轉印體，且使經圖案轉印之光阻膜顯影，藉此可製成具有特定之立體形狀之抗蝕圖案。即，藉由使透過轉印用圖案所具有之透光部及半透光部之曝光量互不相同，可於被轉印體上形成具有抗蝕劑殘膜量互不相同之部分、即階差 之抗蝕圖案。 As described above, the multi-tone mask 10 of the present invention includes a transfer pattern including a light transmitting portion, a semi-light transmitting portion, and a light blocking portion. When the transfer target having the photoresist film formed thereon is exposed by the multi-mode mask 10, the transfer pattern is transferred to the transfer target, and the patterned transfer resist film is developed. This makes it possible to form a resist pattern having a specific three-dimensional shape. In other words, by making the exposure amounts of the light transmitting portion and the semi-light transmitting portion of the transmission transfer pattern different from each other, it is possible to form a portion having a different amount of residual resist film on the transfer target, that is, Step difference Resist pattern.
此種多調式光罩主要被有利地利用於顯示裝置之製造。其原因在於：多調式光罩由於具有相當於2片光罩之功能，故而於顯示裝置之生產效率或成本方面優點較大。 Such a multi-mode reticle is primarily advantageously utilized in the manufacture of display devices. The reason for this is that the multi-mode mask has a function equivalent to two masks, and therefore has a large advantage in terms of production efficiency or cost of the display device.
此種本發明之多調式光罩10可使用作為LCD(Liquid crystal Display，液晶顯示器)用、或者FPD(Flat Panel Display，平板顯示器)用而熟知之曝光裝置進行曝光。例如，使用如下投影曝光裝置，該投影曝光裝置使用包含i射線、h射線、g射線之曝光之光，且具有數值孔徑(NA)為0.08~0.10、同調因子(σ)為0.7~0.9左右之等倍光學系統。當然，上述多調式光罩10亦可設為接近式曝光用之光罩。 The multi-mode mask 10 of the present invention can be exposed by using an exposure apparatus known as an LCD (Liquid Crystal Display) or a FPD (Flat Panel Display). For example, a projection exposure apparatus that uses exposure light including i-rays, h-rays, and g-rays and has a numerical aperture (NA) of 0.08 to 0.10 and a homology factor (σ) of about 0.7 to 0.9 is used. Equal magnification optical system. Of course, the multi-tone mask 10 described above can also be used as a photomask for proximity exposure.
利用本發明之顯示裝置之製造方法製造而成之顯示裝置包含液晶顯示裝置、有機EL顯示裝置等。又，本發明之多調式光罩亦可用於該等顯示裝置之各種部位(薄膜電晶體之S/D(Source/Drain，源極/汲極)層、彩色濾光片之感光性間隔件用層等)之形成。 A display device manufactured by the method of manufacturing a display device of the present invention includes a liquid crystal display device, an organic EL display device, and the like. Moreover, the multi-mode mask of the present invention can also be used for various parts of the display device (S/D (Source/Drain) layer of thin film transistor, photosensitive spacer for color filter) Formation of layers, etc.).
10‧‧‧多調式光罩 10‧‧‧Multi-mode mask
12‧‧‧透明基板 12‧‧‧Transparent substrate
14‧‧‧遮光膜 14‧‧‧Shade film
14a‧‧‧遮光膜圖案 14a‧‧‧Shade film pattern
16‧‧‧半透光膜 16‧‧‧Semi-transparent film
16a‧‧‧半透光膜圖案 16a‧‧‧Semi-transparent film pattern
20‧‧‧半透光膜之邊緣部分 20‧‧‧ Edge portion of semi-transparent film
22‧‧‧遮光部之邊緣部分 22‧‧‧The edge of the sunscreen
24‧‧‧微量側面蝕刻部位 24‧‧‧ Trace side etching
30‧‧‧第1抗蝕膜 30‧‧‧1st resist film
30a‧‧‧第1抗蝕圖案 30a‧‧‧1st resist pattern
32‧‧‧第2抗蝕膜 32‧‧‧2nd resist film
32a‧‧‧第2抗蝕圖案 32a‧‧‧2nd resist pattern
A‧‧‧區域 A‧‧‧ area
B‧‧‧區域 B‧‧‧Area
C1‧‧‧區域 C1‧‧‧ area
C2‧‧‧區域 C2‧‧‧ area
Q‧‧‧對準容限 Q‧‧‧Alignment tolerance
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| JP6573591B2 (en) * | 2016-09-13 | 2019-09-11 | Hoya株式会社 | Photomask manufacturing method, photomask, and display device manufacturing method |
| TW201823855A (en) * | 2016-09-21 | 2018-07-01 | 日商Ｈｏｙａ股份有限公司 | Method of manufacturing a photomask, photomask, and method of manufacturing a display device |
| JP6259508B1 (en) * | 2016-12-28 | 2018-01-10 | 株式会社エスケーエレクトロニクス | Halftone mask, photomask blank, and method of manufacturing halftone mask |
| JP6368000B1 (en) * | 2017-04-04 | 2018-08-01 | 株式会社エスケーエレクトロニクス | Photomask, photomask blank, and photomask manufacturing method |
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| CN111367142A (en) * | 2018-12-26 | 2020-07-03 | 聚灿光电科技（宿迁）有限公司 | Novel optical mask plate with different light transmission |
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