CN105022223A - Multi-gray scale photomask, manufacturing method thereof, and method of manufacturing display device - Google Patents
Multi-gray scale photomask, manufacturing method thereof, and method of manufacturing display device Download PDFInfo
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- CN105022223A CN105022223A CN201410389535.2A CN201410389535A CN105022223A CN 105022223 A CN105022223 A CN 105022223A CN 201410389535 A CN201410389535 A CN 201410389535A CN 105022223 A CN105022223 A CN 105022223A
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- transparent film
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- photo mask
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/28—Phase shift masks [PSM]; PSM blanks; Preparation thereof with three or more diverse phases on the same PSM; Preparation thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Abstract
The present invention provides a multi-gray scale photomask, the method and the wet etching is not generated by the misalignment caused by the deterioration of a pattern, a high precision is formed having a light-transmitting portion and the light-shielding portion between the boundary and the semipermeable transferring the boundary between the light portion and the opaque portion with a pattern device fabrication of multi-tone photomask method of manufacturing a display. It includes a light-shielding portion having a transfer, the semi-transparent portion and the transparent portion is formed on a transparent substrate by the light-shielding film and a semitransparent film were patterned to form a pattern with a multi-tone photomask manufacturing method, the portion having a transfer pattern and said semi-light-transmitting portion of the light blocking portion and said light-transmitting portion and the adjacent portion of the translucent portion adjacent. This method has a predetermined step.
Description
Technical field
The present invention relates to liquid crystal, organic EL (electroluminescence: Electro Luminescence) for the useful multilevel greyscale photo mask of the manufacture of the display device of representative and its manufacture method and the manufacture method of display device employing this multilevel greyscale photo mask.
Background technology
Conventionally, there is known possess the multilevel greyscale photo mask of the transfer printing pattern that the photomask that formed on the transparent substrate and semi-transparent film are patterned respectively.
Etching barrier film is not set even if such as record in patent documentation 1 also can forms photomask and semi-transparent film with the identical or close membrane material of etching characteristic and gray mask and the manufacture method thereof of the shadow tone membranous type of the pattern shift of semi light transmitting part can be prevented.
Patent documentation 1: Japanese Unexamined Patent Publication 2005-257712 publication
The multilevel greyscale photo mask (gray mask) employing semi-transparent film can reduce the number of required photomask, so useful to the lifting of production efficiency in the manufacture process of display device etc.Here, as described in patent document 1, which, the multilevel greyscale photo mask employing shadow tone film has the transfer printing pattern that multiple films (photomask, make the semi-transparent film etc. that passes through of an exposure light part) of implementing patterning are laminated.When manufacturing such multilevel greyscale photo mask, the manufacture method according to patent documentation 1, because do not need the starting material selecting mutually to have etching selectivity in film starting material, has the wide advantage of raw-material range of choice.
In the manufacture method described in patent documentation 1, by the operation described in Fig. 2, the gray mask 300 shown in (i) of shop drawings 2.Specifically, first prepare to define on transparency carrier 201 photomask 202 and apply eurymeric resist thereon and define the photo blanks 200 ((a) of Fig. 2) of resist film 203.
Then, use laser description machine etc. to carry out describing (first describes), and develop.Thus in the region (a-quadrant of Fig. 2) forming semi light transmitting part, resist film is removed, and forms in the region (the C region of Fig. 2) in the region (the B region of Fig. 2) and formation transmittance section that form light shielding part the Resist patterns 203a ((b) of Fig. 2) remaining resist film.
Next, using the Resist patterns 203a of formation as mask, photomask 202 is etched (the first etching), forms photomask pattern 202a ((c) of Fig. 2) in the region corresponding with light shielding part (B region) and transmittance section (C region).Then, Resist patterns 203a ((d) of Fig. 2) is removed.
By primary photo-mask process described above, the region (a-quadrant) corresponding with semi light transmitting part delimited, and in this moment, light shielding part (B region) and transmittance section (C region) delimited.
Next, semi-transparent film 204 ((e) of Fig. 2) is formed to the whole surface by the substrate processing the band photomask pattern obtained above.Thus, the semi light transmitting part of a-quadrant is formed.
Then, the whole surface application eurymeric resist of double light-transmissive film 204 forms resist film 205 ((f) of Fig. 2), and carries out describing (second describes).After development, remove resist film 205 in transmittance section (C region), formed at light shielding part (B region) and semi light transmitting part (a-quadrant) and remain resist film Resist patterns 205a ((g) of Fig. 2).
Using the Resist patterns 205a that formed as mask, (the second etching) is etched to the semi-transparent film 204 in C region and photomask pattern 202a becoming transmittance section and removes ((h) of Fig. 2).Here, because semi-transparent film is identical with the etching characteristic of photomask or close, therefore, it is possible to etch continuously.Then, above-mentioned second etching after, removing Resist patterns 205a thus gray mask 300 complete ((i) of Fig. 2).
According to manufacture method described above, by Twi-lithography operation thus photomask and semi-transparent film be patterned respectively, thus have light shielding part, transmittance section and semi light transmitting part gray mask manufactured go out.
In this manufacture method, the pattern dimension of semi light transmitting part and the position relationship between semi light transmitting part and light shielding part are guaranteed by first time photo-mask process, so have be formed in groove important in the characteristic of TFT (thin film transistor (TFT): Thin Film Transistor) advantage with can not producing pattern shift.
In addition, in the display device being equipped with liquid crystal, organic EL, in the many-side such as brightness, clarity, reaction velocity, the reduction of power consumption, further cost reduction of image, require increasing technique improvement.Under this situation, to the photomask for the manufacture of these equipment, require that there is following function: exquisiter can not only form trickle pattern to compare in the past, and with low cost, pattern can also be transferred to transfer printing body (display panel substrate etc.).In addition, the design of required transfer printing pattern is also diversified, complicated.
In this condition, according to the discussion of the present inventors, find new problem.
According to the operation of above-mentioned patent documentation 1, by the second etching, continuously 1 operation etching semi-transparent film of removing and these 2 films ((h) of Fig. 2) of photomask.Here, such as, if set photomask to be with the film of chromium (Cr) as major component, semi-transparent film is the film be made up of chromium compound, if the former etching required time is X (such as 50 seconds), the etching required time of the latter is Y (such as 10 seconds), then in the second etching, need the etching period (such as 60 seconds) of (X+Y), compared with when etching photomask or this single film of semi-transparent film, become long-time.
In addition, here as engraving method, Wet-type etching is suitable for.This is because Wet-type etching highly advantageously can be applicable to display device manufacture photomask.This is because for Area comparison large (being more than 300mm on one side) and for the display device manufacture photomask that there is the substrate of multiple size, no matter Wet-type etching, compared with the dry-etching needing vacuum plant, is that equipment aspect or efficiency aspect are all greatly favourable.
For Wet-type etching, the character of isotropic etching is comparatively strong, not only by the depth direction of etching-film, with by parallel direction, etching-film surface, etching is also in progress.Generally speaking, when the longer etching period of needs, there is the trend that in the face of etch quantity deviation expands, thus along with the time of Wet-type etching elongated, side etching quantity increases, and the deviation of this amount in face also increases.Therefore, in these cases, live width (meaning below as the live width of pattern uses for CD, critical dimension: the CriticalDimension) precision of the transfer printing pattern of formation is easy to worsen.That is, for the second etching needing above-mentioned (X+Y) (second), have problems at that point.In addition, elongated along with etching period, the use amount of etchant also increases, and the burden comprising the liquid waste processing of heavy metal also increases.
In addition, complicated in the design of transfer printing pattern, when being the pattern of fine dimension (CD), the present inventors pay close attention to the possibility producing following problem like that further.
Notationally state in (i) of Fig. 2 of the manufacture method of patent documentation 1, be formed with the pattern comprising the part that semi light transmitting part and light shielding part adjoin, but except such pattern, in the transfer printing pattern of the photomask of nearest display device manufacture, also comprise more complicated pattern.Such as, there are the needs of the transfer printing pattern also except above-mentioned adjacent part with the part that transmittance section and semi light transmitting part adjoin etc.
Therefore, the transfer printing pattern such as considering shown in above-mentioned Fig. 2 also has the situation ((i) with reference to Fig. 3) of the part that transmittance section and semi light transmitting part adjoin.Here, the point that a-quadrant is in figure 3 semi light transmitting part, B region is light shielding part is identical with the operation of above-mentioned Fig. 2.In addition, in figure 3, the transmittance section adjacent with light shielding part is set to C1 region, the transmittance section adjacent with semi light transmitting part is set to C2 region.
The operation (the first photo-mask process) of (a) ~ (d) of Fig. 3 is corresponding with (a) ~ (d) of Fig. 2 respectively, and the operation (the second photo-mask process) of (e) ~ (i) of Fig. 3 is corresponding with (e) ~ (i) of Fig. 2 respectively.Here, in the step of Fig. 3 (h) of expression second etching, becoming the region of transmittance section C1, the etching semi-transparent film 204 of removing and photomask pattern 202a, becoming the region of transmittance section C2, and only semi-transparent film 204 is by etching removing.
At this moment, the setting of the required time of the second etching becomes difficulty.Because the part of transmittance section C1 needs above-mentioned (X+Y) etching period, and just much of that in the etching period that the part becoming transmittance section C2 is suitable with above-mentioned Y.
Therefore, at the end of the etching for the formation of transmittance section C1, in the part of C2, etching is excessively carried out, semi-transparent film 204 under Resist patterns 205a, lateral erosion progress (in (h) of Fig. 3, the marginal portion of the semi-transparent film represented with label 210).Its result, the size of semi-transparent film figure 204a becomes different from the size of Resist patterns 205a.
Therefore, need to consider that this side etching quantity is reflected in advance to be described in data in advance.Namely, implement according to the mode etching minimizing (side that etch quantity is few) slightly the sizing (sizing) describing data in advance as description data, lateral erosion progress as a result, become (as designed) size of just design.But, even if adopt this gimmick, deviation in the face that can not solve above-mentioned etch quantity.
Further, if set side etching quantity as S μm ((h) with reference to Fig. 3), then in above-mentioned sizing, for the size of the transmittance section C2 wished to get, must describe on narrow 2S (μm) amount ground in advance.Therefore, the size based on the transmittance section C2 describing data significantly attenuates micro-, close to the live width boundary that drawing apparatus ensures, is difficult to obtain stable CD precision.In addition, the transmittance section C2 with the live width less than 2S (μm) then becomes and can not be formed.
Therefore, in the method for figure 3 known, when for manufacturing the trickleer and multilevel greyscale photo mask of higher CD precision, still remain problem.
In addition, in first description of (b) of Fig. 3, the description data importing for the formation of transmittance section C1 is shaped.Namely, premised between describing in the first description, second, generation aligning misplaces mutually, describe according to producing the mode (according to etching the mode reduced) considering the opening of the Resist patterns of the size quantity that aligning misplaces less of the size (the longitudinal dotted line with reference to (b) of Fig. 3) of desired transmittance section C1.If do not carry out this, then can due to the second description, development, the part in the region becoming transmittance section C1 remains Resist patterns, produces the defective mode forming unwanted semi light transmitting part.Be explained referring to Fig. 4.
That is, on transparency carrier 201, form photomask pattern 202a by first photo-mask process of (a) ~ (d) of Fig. 4, and on them, form semi-transparent film 204 ((e) of Fig. 4).Then apply photoresist thereon and form resist film 205 ((f) of Fig. 4).
Then, as (f) of Fig. 4, carry out for describing in second of C1 region and formation transmittance section, C2 region, and develop.But, in reality, aligning dislocation to a certain degree can be produced between first describes and second describes, so do not form the opening of Resist patterns 205a in Fig. 4 (f) with lucky (as shown) position that longitudinal dotted line represents, but the edge of opening forming Resist patterns with the position that dotted-line ellipse represents of (g) at Fig. 4.
Then, if carry out etching removing ((h) of Fig. 4) of semi-transparent film 204 based on this Resist patterns 205a, removing Resist patterns 205a ((i) of Fig. 4), then produce the unfavorable condition at the position that should become transmittance section (C1) residual unwanted semi-transparent film 206.
As practical problems, make the pattern position based on twice description completely the same more difficult, so need the sizing shown in 3 (b) of figure, in this case, result produces the problems referred to above because wet type lateral erosion causes.
As from intelligible above, when being suitable for Wet-type etching to be formed the transfer printing pattern with the border between transmittance section and light shielding part and the border between semi light transmitting part and light shielding part, it is desirable to not produce made transmittance section (C1 and C2) by Wet-type etching and aiming at CD precision improvement with misplacing the patterns deteriorates that causes.
Summary of the invention
Given this, the object of the present invention is to provide a kind of do not produce by Wet-type etching and aim at misplace cause patterns deteriorates ground do not formed accurately there is the border between transmittance section and light shielding part and the border between semi light transmitting part and light shielding part transfer printing pattern to manufacture the method for the multilevel greyscale photo mask of display device manufacture.
Main idea of the present invention is as follows.
The manufacture method of a <1> multilevel greyscale photo mask, it is the manufacture method of the multilevel greyscale photo mask with transfer printing pattern, above-mentioned transfer printing pattern possesses the light shielding part being patterned respectively by forming photomask on the transparent substrate and semi-transparent film and being formed, semi light transmitting part and transmittance section, it is characterized in that, above-mentioned transfer printing pattern has the adjacent part of part and above-mentioned semi light transmitting part that above-mentioned light shielding part and above-mentioned transmittance section adjoin and above-mentioned transmittance section, the manufacture method of above-mentioned multilevel greyscale photo mask has: the operation preparing the photo blanks being formed with above-mentioned photomask on above-mentioned transparency carrier, the region that etching removing becomes above-mentioned light shielding part is with the photomask of exterior domain thus form the operation of above-mentioned light shielding part, the above-mentioned transparency carrier being formed with above-mentioned light shielding part is formed the operation of above-mentioned semi-transparent film, above-mentioned semi-transparent film is formed in the Resist patterns formation process that the region comprising the region becoming above-mentioned transmittance section has the Resist patterns of opening, using the semi-transparent film etching work procedure that above-mentioned Resist patterns etches as mask above-mentioned semi-transparent film, and remove the operation of above-mentioned Resist patterns, in above-mentioned Resist patterns formation process, form the Resist patterns with opening, the size of above-mentioned opening adds the size after alignment edges to the size becoming the region of above-mentioned transmittance section adjoined with above-mentioned light shielding part, in above-mentioned semi-transparent film etching work procedure, in the opening of above-mentioned Resist patterns, the above-mentioned transparency carrier becoming the region of above-mentioned transmittance section exposes, and in the marginal portion adjacent with above-mentioned transmittance section of above-mentioned light shielding part, above-mentioned semi-transparent film on above-mentioned photomask is etched in a thickness direction at least partially.
The manufacture method of the multilevel greyscale photo mask of <2> according to <1>, it is characterized in that, in above-mentioned semi-transparent film etching work procedure, in above-mentioned light shielding part above-mentioned semi-transparent film in a thickness direction at least partially etched marginal portion, be more than 2 relative to the optical density (OD) (OD, Optical Density) of the exposure light of above-mentioned multilevel greyscale photo mask.
The manufacture method of the multilevel greyscale photo mask of <3> according to <1> or <2>, it is characterized in that, above-mentioned semi-transparent film and above-mentioned photomask are by can forming with the material that same etching solution carries out etching.
The manufacture method of the multilevel greyscale photo mask of <4> according to any one of <1> ~ <3>, it is characterized in that, above-mentioned semi-transparent film and above-mentioned photomask are by can forming with the material that same etching solution carries out etching, and above-mentioned semi-transparent film and above-mentioned photomask are 5:1 ~ 50:1 relative to the etch-rate ratio of above-mentioned same etching solution.
The manufacture method of the multilevel greyscale photo mask of <5> according to any one of <1> ~ <4>, it is characterized in that, above-mentioned alignment edges is 0.25 ~ 0.75 μm.
The manufacture method of the multilevel greyscale photo mask of <6> according to any one of <1> ~ <5>, it is characterized in that, above-mentioned semi-transparent film is 1:5 ~ 1:50 with the ratio of the etching required time of above-mentioned photomask.
<7> multilevel greyscale photo mask, it is the multilevel greyscale photo mask with transfer printing pattern, above-mentioned transfer printing pattern possesses the light shielding part being patterned respectively by forming photomask on the transparent substrate and semi-transparent film and being formed, semi light transmitting part and transmittance section, the feature of above-mentioned multilevel greyscale photo mask is, above-mentioned transfer printing pattern has the adjacent part of part and above-mentioned semi light transmitting part that above-mentioned light shielding part and above-mentioned transmittance section adjoin and above-mentioned transmittance section, in above-mentioned transmittance section, above-mentioned transparency carrier exposes, in above-mentioned semi light transmitting part, the above-mentioned semi-transparent film that above-mentioned transparency carrier is formed exposes, above-mentioned light shielding part has above-mentioned semi-transparent film on the laminated portions of above-mentioned photomask and above-mentioned semi-transparent film-stack and above-mentioned photomask in a thickness direction at least partially by the marginal portion that etched, above-mentioned marginal portion and above-mentioned transmittance section adjoin, the width of above-mentioned marginal portion is 0.25 ~ 0.75 μm, and the optical density (OD) relative to exposure light of above-mentioned marginal portion (OD) is more than 2.
The multilevel greyscale photo mask of <8> according to <7>, it is characterized in that, above-mentioned transfer printing pattern possesses the above-mentioned transmittance section clamped by above-mentioned semi light transmitting part and the above-mentioned transmittance section clamped by above-mentioned light shielding part.
The multilevel greyscale photo mask of <9> according to <7> or <8>, it is characterized in that, above-mentioned semi-transparent film and above-mentioned photomask are by can forming with the material that same etching solution carries out etching.
The multilevel greyscale photo mask of <10> according to <8> or <9>, it is characterized in that, above-mentioned semi-transparent film and above-mentioned photomask are by can forming with the material that same etching solution carries out etching, and above-mentioned semi-transparent film and above-mentioned photomask are 5:1 ~ 50:1 relative to the etch-rate ratio of above-mentioned same etching solution.
The manufacture method of a <11> display device, it is characterized in that having: the operation preparing the multilevel greyscale photo mask according to any one of <7> ~ <10>; And utilize exposure device to expose above-mentioned multilevel greyscale photo mask and above-mentioned transfer printing pattern be transferred to the operation of transfer printing body.
According to the present invention, the patterns deteriorates ground do not produced by Wet-type etching and aligning dislocation generation is provided to form the transfer printing pattern thus the method for the multilevel greyscale photo mask of manufacture display device manufacture with the border between transmittance section and light shielding part and the border between semi light transmitting part and light shielding part accurately.And according to the present invention, such as, provide the manufacture method of the multilevel greyscale photo mask manufactured by the method and the display device employing this multilevel greyscale photo mask.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of each operation of the manufacture method representing multilevel greyscale photo mask of the present invention.
Fig. 2 is the schematic diagram of each operation of the manufacture method representing the gray mask shown in patent documentation 1.
Fig. 3 be represent as a reference example, the schematic diagram of each operation of the manufacture method of the multilevel greyscale photo mask with the transfer printing pattern comprising part and transmittance section that transmittance section and semi light transmitting part adjoin and the part that light shielding part adjoins.
Fig. 4 be represent as a reference example, the schematic diagram of each operation of the manufacture method of multilevel greyscale photo mask when not importing alignment edges.
Description of reference numerals:
10 ... multilevel greyscale photo mask; 12,201 ... transparency carrier; 14,202 ... photomask; 14a, 202a ... photomask pattern; 16,204 ... semi-transparent film; 16a, 204a ... semi-transparent film figure; 20 ... the marginal portion of semi-transparent film; 22 ... the marginal portion of light shielding part; 24 ... trace lateral erosion position; 30 ... first resist film; 30a ... first Resist patterns; 32 ... second resist film; 32a ... second Resist patterns; 200 ... photo blanks; 203 ... resist film; 203a ... Resist patterns; 205 ... resist film; 205a ... Resist patterns; 206 ... unwanted semi-transparent film; 210 ... the marginal portion of semi-transparent film; 300 ... gray mask.
Embodiment
Below, successively the manufacture method of the manufacture method (hereinafter also referred to as " manufacture method of the present invention ") of multilevel greyscale photo mask of the present invention, multilevel greyscale photo mask of the present invention and display device of the present invention is described.
[manufacture method of multilevel greyscale photo mask]
Multilevel greyscale photo mask of the present invention by via each operation illustrated in above-mentioned [summary of the invention] <1>, the operation namely preparing photo blanks, etching removing photo blanks photomask thus form the operation of light shielding part, the operation forming semi-transparent film, the operation that this semi-transparent film is formed Resist patterns, the operation that above-mentioned semi-transparent film is etched and the operation that removes above-mentioned Resist patterns manufactures.Below, with reference to Fig. 1, these each operations are described.
< prepares photo blanks operation ((a) of Fig. 1) >
Fig. 1 is the schematic diagram of each operation of the manufacture method representing multilevel greyscale photo mask of the present invention.In manufacture method of the present invention, first prepare the photo blanks defining photomask 14 on the transparency carrier 12 of the glass etc. of the regulation shape corresponding with the flat shape of multilevel greyscale photo mask for manufacturing.
The starting material of photomask 14 used here are not particularly limited, but preferably can use following starting material.Such as, as the starting material of photomask 14, except Cr or Cr compound (oxide, nitride, carbonide, oxides of nitrogen, nitrogen-oxygen carbide etc. of Cr), also preferably can use Ta, Mo, W and their compound (such as, the metal silicide such as TaSi, MoSi, WSi or their nitride, oxides of nitrogen) etc.In addition, these materials both can a kind be used alone, also can two or more combinationally use.
Photomask 14 can be the film be such as formed in by known methods such as sputtering methods on transparency carrier 12.For the thickness of photomask 14, the optical density (OD) (OD) of photomask 14 is more than 2 relative to the exposure light used for the multilevel greyscale photo mask manufactured, is preferably more than 3.
Further, photomask 14 can have anti-reflection layer, etch the functional layers such as deceleration layer on the top layer of its face side (with transparency carrier 12 opposition side).Above-mentioned anti-reflection layer can improve description precision by the reflection suppressing resist film to describe light.In addition, above-mentioned etching deceleration layer has following effect: when semi-transparent film etching work procedure described later, the speed making the marginal portion 20 ((g) with reference to Fig. 1) of light shielding part accept etching declines, thus suppresses the damage of photomask 14 in this part.
Such as when photomask 14 comprises Cr, above-mentioned anti-reflection layer can be arranged at least to comprise in the oxide of Cr, nitride, carbonide, oxides of nitrogen, nitrogen carbide any one layer.
In addition, above-mentioned etching deceleration layer can carry out by the etching solution of photomask 14 material that etches, and compared with the composition (or film quality) of the thickness direction inside with photomask 14, etch the material that composition (or film quality) slowly forms.Such as, when forming photomask 14 with the starting material containing Cr, as the starting material of etch sputtered layer, at least one selected from the oxide, nitride, carbonide, oxides of nitrogen, nitrogen-oxygen carbide etc. of Cr can be adopted.In addition, anti-reflection layer also can double as etching deceleration layer.
Anti-reflection layer and/or etching deceleration layer can be formed according to the mode that the composition of the depth direction upper epidermis part at photomask 14 is different from inboard portion.The border clearly of composition can be there is between the surface part of photomask 14 and inboard portion, composition also can be made to change continuously or periodically at the depth direction of photomask 14.
In addition, photomask 14 for the above-described, even if be in the state eliminating above-mentioned anti-reflection layer or etching deceleration layer, the optical density (OD) OD of the exposure light used for the multilevel greyscale photo mask that will manufacture also is usual more than 2, preferably more than 3.
Further, can use such as on above-mentioned photomask 14, apply photoresist (hereinafter also referred to as " resist ") by known applying device (coating machine, coater) thus formed the first resist film 30, band resist photo blanks ((a) with reference to Fig. 1).
< light shielding part formation process ((b) ~ (d) of Fig. 1) >
In this operation, by forming photomask pattern 14a, delimit light shielding part.
Specifically, by carrying out the first description with description machine to the first resist film 30 and then develop, the first Resist patterns 30a ((b) of Fig. 1) is formed.Can negative resist be used, but here to use the mode of eurymeric resist to be described.
At this moment, create description data in the following manner, and describe based on these description data: at residual first resist film in the region (the B region of Fig. 1) becoming light shielding part, the part in the region beyond this, first resist film is removed by development, thus at this part first Resist patterns 30a opening.
Such formation first Resist patterns 30a, etches (the first etching) thus formation photomask pattern 14a ((c) of Fig. 1) as mask to photomask 14.Then, the first Resist patterns 30a is removed.Thus, light shielding part ((d) of Fig. 1) delimited.
As above-mentioned etching, be preferably suitable for Wet-type etching.Known etching solution can be used, such as, if the photomask containing Cr, then can use the mixed solution of cerous nitrate (IV) aqueous ammonium and perchloric acid.
< semi-transparent film film formation process ((e) of Fig. 1) >
Semi-transparent film 16 ((e) of Fig. 1) is formed to the whole surface be formed on the above-mentioned transparency carrier 12 of photomask pattern 14a.The film forming of semi-transparent film 16 can utilize the known methods such as sputtering method to implement.
Semi-transparent film 16 can be made relative to representative wavelength (any wavelength comprised in exposure light of the exposure light used for multilevel greyscale photo mask.Such as i light) transmitance be 20 ~ 80%.Transmitance is preferably 20 ~ 70%, is more preferably 30 ~ 60%.
In addition, the light transmission rate that semi-transparent film 16 has has wavelength dependency sometimes.Therefore, preferably when set relative to i light (365nm) transmitance as Tr (i) (%), be Tr (g) (%) relative to the transmitance of g light (436nm) time, meet 0≤Tr (g)-Tr (i)≤5 (%).In this situation, can with the individual difference of exposure device light source, change independently stable maintenance transferability.
In addition, semi-transparent film 16 be preferably less than 90 degree relative to the above-mentioned phase-shift phase representing wavelength Bo Long, be more preferably less than 60 degree.If phase-shift phase is close to 180 degree, border then between the semi light transmitting part of a-quadrant in FIG and the transmittance section in C2 region, the phase reversal of exposure light, mutual interference, thus exposure light offsets, the three-dimensional shape that there is the Resist patterns that be formed on transfer printing body produces the risk of unwanted protuberance.
As the starting material of this semi-transparent film 16, exemplify following starting material.Such as, as the starting material of semi-transparent film 16, Cr compound (oxide, nitride, carbonide, oxides of nitrogen, nitrogen-oxygen carbide etc. of Cr), Si compound (SiO can be used
2, SOG (spin-coating glass: Spin on Glass)), the Ti compound such as metal silicide (TaSi, MoSi, WSi or their nitride, oxides of nitrogen etc.) and TiON.These starting material both can be a kind and be used alone, and also can two or more combinationally use.
In addition, when the material of photomask 14 and semi-transparent film 16 has mutual etching selectivity and when not there is mutual etching selectivity, manufacture method of the present invention can be suitable for.That is, photomask 14 and semi-transparent film 16 have the situation of resistance relative to mutual etching solution and do not have the situation of resistance.But, for manufacture method of the present invention, to produce when photomask 14 does not have etching selectivity with semi-transparent film 16 (namely, when can be undertaken etching by same etching solution) advantage, and Be very effective in solution problem, so be here described in like fashion.
Preferred photomask 14, semi-transparent film 16 comprise same metal mutually, and in addition, the preferred example of this metal is Cr.
But preferred photomask 14 is mutually different from the etch-rate of semi-transparent film 16.Etch-rate refers to the etch quantity of the time per unit when being etched by etching solution.This is decided by the respective raw-material composition forming film, film quality.Such as, even if containing common metal, it is poor relative to the etch-rate generation of common etching solution also to make because other compositions are different.
In manufacture method of the present invention, preferably relative to same etching solution, the etch-rate (HR) of semi-transparent film 16 is larger than the etch-rate (OR) of photomask 14.Specifically, preferred HR/OR >=5, more preferably 50 >=HR/OR >=5.That is, preferably compare for 5:1 ~ 50:1 relative to the semi-transparent film 16 of same etching solution and the etch-rate of photomask 14.
Further, preferred semi-transparent film 16 is 1:5 ~ 1:50 with the ratio of the etching required time of photomask 14.Thereby, it is possible to suppress the etch quantity of the marginal portion described later 20 etching the light shielding part carried out by second, and can maintain and etch the marginal portion 22 that the formed shade function as light shielding part, so preferably by second.
< Resist patterns formation process ((f) ~ (g) of Fig. 1) >
Semi-transparent film 16 applies photoresist to be formed the second resist film 32 ((f) of Fig. 1).
Then, as shown in (g) of Fig. 1, carry out describing (second describes), and develop, form the second Resist patterns 32a thus.Second Resist patterns 32a has opening in the part corresponding with region C1 and C2 becoming transmittance section.
But, in describing second, be created in the description data that the adjacent part in light shielding part and transmittance section implements the sizing that alignment edges Q (μm) measures, carry out the second description (the longitudinal dotted line with reference to (f) of Fig. 1) based on these description data.The size that the size of alignment edges Q misplaces based on the aligning caused by drawing apparatus decides, preferably 0.25 ~ 0.75 μm (as shown in (g) of Fig. 1, the side relative to Resist patterns).Or, aiming in excellent drawing apparatus, alignment edges Q also can be established to be of a size of 0.2 ~ 0.5 μm.
In addition, in this operation, about the region (the C2 region in Fig. 1) becoming the transmittance section adjoined with semi light transmitting part, can not need to consider the sizing of alignment edges, the description data the size being set as the transmittance section as wished to get.This is because the size of the transmittance section in C2 region is only described to determine by second.
Or, also can consider a little side etching quantity (such as, less than 0.1 μm, the micro-lateral erosion position 24 with reference to (h) of Fig. 1) along with Wet-type etching, make it be reflected in description data.In this case, because side etching quantity is less, the shortcoming that in face, deviation expands also can not be produced in the present invention.
According to the method, do not produce the operation of CD deteriorated accuracy because etching for a long time.Further, because there is no need prediction large side etching quantity and in advance by the description data correction of transmittance section to reducing side, so the risk that trickle pattern is modified into the width that can not differentiate can be eliminated.
< semi-transparent film etching work procedure ((h) of Fig. 1) >
After formation second Resist patterns 32a, with this Resist patterns for mask, etch and remove the part (the second etching, (h) of Fig. 1) that semi-transparent film 16 exposes.Etching period is etched the time of removing for benchmark with the semi-transparent film 16 in the C2 region in Fig. 1.That is, as Fig. 3 (h), do not carry out the etching of (Ⅹ+Y) (second), but Y (second) left and right.Therefore the serious problems caused by lateral erosion that conventional art is such can not be produced.
Then, by above-mentioned etching, form the transmittance section in C2 region, and the semi-transparent film in C1 region is also by etching removing, thus forms transmittance section.At this moment, the marginal portion 20 in the B region (light shielding part) adjacent with C1 region (transmittance section) is exposed from the second Resist patterns 32a, so the semi-transparent film 16 of this part is etched in a thickness direction at least partially, thickness reduces ((h) of Fig. 1).
But etching period is set to the time of removing needed for semi-transparent film 16 as described above, so the impact that the photomask pattern 14a under semi-transparent film 16 is etched hardly, can not cause substantial damage.
In addition, even if photomask 14 sustains damage a little, because also its optical property can be maintained, undesirable condition is not had.This optical property refers to the optical density (OD) (OD) relative to exposure light, is more than 2, preferably more than 3.More preferably make the etch-rate of photomask 14 less than the etch-rate of semi-transparent film 16.
As the etching of semi-transparent film 16 described above, the manufacturing cost from the viewpoint of the manufacture of the multilevel greyscale photo mask of display device, preferably adopts Wet-type etching.When semi-transparent film 16 is containing Cr, as this etching solution, the mixed solution of cerous nitrate (IV) aqueous ammonium and perchloric acid can be used.
< Resist patterns removal step ((i) of Fig. 1) >
After the etching work procedure of semi-transparent film, remove the second Resist patterns 32, complete multilevel greyscale photo mask 10 ((i) of Fig. 1) of the present invention.This multilevel greyscale photo mask 10 on transparency carrier 12, have be patterned respectively by photomask 14 and semi-transparent film 16 and formed light shielding part, transmittance section and semi light transmitting part.
[multilevel greyscale photo mask]
In multilevel greyscale photo mask 10 of the present invention, the laminated portions that B region has photomask and semi-transparent film-stack and the marginal portion 22 decreased at least semi-transparent film surface film thicknesses in the edge of its side, transmittance section.A-quadrant forms by forming semi-transparent film figure 16a on transparency carrier 12.And, expose at C1 and C2 areas transparent substrate 12.Above B region, a-quadrant and C1, C2 region form light shielding part in multilevel greyscale photo mask 10, semi light transmitting part and transmittance section respectively, and multilevel greyscale photo mask of the present invention has the transfer printing pattern having possessed them.
According to the present inventor, they think, the dimensional accuracy of the light shielding part of the multilevel greyscale photo mask manufactured by manufacture method of the present invention is high.This is because as described above, do not need long etching in the second etching, and describe by first, the size of light shielding part substantially delimited.This first describe time, preferably can be used in the photomask that surface has an anti-reflection layer and carry out, even if so compared with describing with the laser under the state that semi-transparent film is placed in upper strata, also can high precision be obtained.
In addition, do not damaging the scope of effect of the present invention, except photomask, semi-transparent film, blooming, functional membrane (etching barrier film etc.) also can be also set.
[manufacture method of display device]
Multilevel greyscale photo mask 10 of the present invention possesses the transfer printing pattern comprising above-mentioned transmittance section, semi light transmitting part and light shielding part.If by this multilevel greyscale photo mask 10, expose on the transfer printing body being formed with optical resist film, then this transfer printing pattern is transferred to transfer printing body, develops to the optical resist film after pattern transfer printing, can form the Resist patterns with regulation three-dimensional shape thus.That is, the transmittance section had through transfer printing pattern is mutually different with the exposure of semi light transmitting part, thus on transfer printing body, can form the mutually different part of resist residual volume, namely have the Resist patterns of jump.
Such multilevel greyscale photo mask is mainly favourable to the manufacture of display device and be utilized.Multilevel greyscale photo mask has the function of two pieces of photomasks, so in the production efficiency, cost of display device, have larger advantage.
Multilevel greyscale photo mask of the present invention 10 like this can be used as the exposure device that LCD (liquid crystal display: Liquid crystal Display) uses or FPD (flat-panel monitor: Flat PanelDisplay) uses and knows to expose.Such as, can use utilize comprise i light, h light, g light exposure light and have that opening number (NA) is 0.08 ~ 0.10, coefficient of coherence (σ) be about 0.7 ~ 0.9 etc. the projection aligner of multiplying power optical system.Certain above-mentioned multilevel greyscale photo mask 10 also can as the photomask of proximity exposure.
Liquid crystal indicator, organic EL display etc. is included by the display device of the manufacture method manufacture of display device of the present invention.In addition, multilevel greyscale photo mask of the present invention also can be used in the formation at each position (S/D (Source/Drain (the source/drain)) layer of thin film transistor (TFT), the light isolation layer etc. of chromatic filter) of these display device.
Claims (11)
1. the manufacture method of a multilevel greyscale photo mask, it is the manufacture method of the multilevel greyscale photo mask with transfer printing pattern, described transfer printing pattern possesses by forming light shielding part that photomask on the transparent substrate and semi-transparent film be patterned respectively and formed, semi light transmitting part and transmittance section, it is characterized in that
Described transfer printing pattern has the adjacent part of part and described semi light transmitting part that described light shielding part and described transmittance section adjoin and described transmittance section,
The manufacture method of described multilevel greyscale photo mask has:
Prepare the operation being formed with the photo blanks of described photomask on described transparency carrier;
The region that etching removing becomes described light shielding part is with the photomask of exterior domain thus form the operation of described light shielding part;
The described transparency carrier being formed with described light shielding part is formed the operation of described semi-transparent film;
Described semi-transparent film is formed in the Resist patterns formation process that the region comprising the region becoming described transmittance section has the Resist patterns of opening;
Using the semi-transparent film etching work procedure that described Resist patterns etches as mask described semi-transparent film; And
Remove the operation of described Resist patterns,
In described Resist patterns formation process, formed and have the Resist patterns of opening, the size of described opening adds the size after alignment edges to the size becoming the region of described transmittance section adjoined with described light shielding part,
In described semi-transparent film etching work procedure, in the opening of described Resist patterns, the described transparency carrier becoming the region of described transmittance section exposes, and in the marginal portion adjacent with described transmittance section of described light shielding part, the described semi-transparent film on described photomask is etched at least partially at thickness direction.
2. the manufacture method of multilevel greyscale photo mask according to claim 1, is characterized in that,
In described semi-transparent film etching work procedure, semi-transparent film described in described light shielding part thickness direction at least partially etched marginal portion, be more than 2 relative to the optical density (OD) of the exposure light of described multilevel greyscale photo mask that is OD.
3. the manufacture method of the multilevel greyscale photo mask according to claims 1 or 2, is characterized in that,
Described semi-transparent film and described photomask are by can forming with the material that same etching solution carries out etching.
4. the manufacture method of the multilevel greyscale photo mask according to claims 1 or 2, is characterized in that,
Described semi-transparent film and described photomask are by can forming with the material that same etching solution carries out etching, and described semi-transparent film and described photomask are 5:1 ~ 50:1 relative to the etch-rate ratio of described same etching solution.
5. the manufacture method of the multilevel greyscale photo mask according to claims 1 or 2, is characterized in that,
Described alignment edges is 0.25 ~ 0.75 μm.
6. the manufacture method of the multilevel greyscale photo mask according to claims 1 or 2, is characterized in that,
Described semi-transparent film is 1:5 ~ 1:50 with the ratio of the etching required time of described photomask.
7. a multilevel greyscale photo mask is the multilevel greyscale photo mask with transfer printing pattern, and described transfer printing pattern possesses by forming light shielding part that photomask on the transparent substrate and semi-transparent film be patterned respectively and formed, semi light transmitting part and transmittance section,
The feature of described multilevel greyscale photo mask is,
Described transfer printing pattern has the adjacent part of part and described semi light transmitting part that described light shielding part and described transmittance section adjoin and described transmittance section,
In described transmittance section, described transparency carrier exposes,
In described semi light transmitting part, the described semi-transparent film that described transparency carrier is formed exposes,
Described light shielding part has described semi-transparent film on the laminated portions of described photomask and described semi-transparent film-stack and described photomask at thickness direction at least partially by the marginal portion that etched,
Described marginal portion and described transmittance section adjoin, and the width of described marginal portion is 0.25 ~ 0.75 μm, and the optical density (OD) relative to exposure light of described marginal portion that is OD are more than 2.
8. multilevel greyscale photo mask according to claim 7, is characterized in that,
Described transfer printing pattern possesses the described transmittance section clamped by described semi light transmitting part and the described transmittance section clamped by described light shielding part.
9. the multilevel greyscale photo mask according to claim 7 or 8, is characterized in that,
Described semi-transparent film and described photomask are by can forming with the material that same etching solution carries out etching.
10. the multilevel greyscale photo mask according to claim 7 or 8, is characterized in that,
Described semi-transparent film and described photomask are by can forming with the material that same etching solution carries out etching, and described semi-transparent film and described photomask are 5:1 ~ 50:1 relative to the etch-rate ratio of described same etching solution.
The manufacture method of 11. 1 kinds of display device, is characterized in that, has:
Prepare the operation of the multilevel greyscale photo mask according to any one of claim 7 ~ 10; And
Utilize exposure device to expose described multilevel greyscale photo mask and described transfer printing pattern be transferred to the operation of transfer printing body.
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| JP2014094482A JP2015212720A (en) | 2014-05-01 | 2014-05-01 | Method of producing multi-gradation photo mask, the multi-gradation photo mask, and method of producing display device |
| JP2014-094482 | 2014-05-01 |
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| CN105022223A true CN105022223A (en) | 2015-11-04 |
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| CN201410389535.2A Pending CN105022223A (en) | 2014-05-01 | 2014-08-08 | Multi-gray scale photomask, manufacturing method thereof, and method of manufacturing display device |
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| JP (1) | JP2015212720A (en) |
| KR (2) | KR101640082B1 (en) |
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Also Published As
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| TWI617876B (en) | 2018-03-11 |
| TW201543136A (en) | 2015-11-16 |
| KR20160085741A (en) | 2016-07-18 |
| KR101869598B1 (en) | 2018-06-20 |
| TW201643541A (en) | 2016-12-16 |
| KR101640082B1 (en) | 2016-07-18 |
| TWI530753B (en) | 2016-04-21 |
| JP2015212720A (en) | 2015-11-26 |
| KR20150126263A (en) | 2015-11-11 |
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