JP2011215197A5

JP2011215197A5 -

Info

Publication number: JP2011215197A5
Application number: JP2010080506A
Authority: JP
Filing date: 2010-03-31
Publication date: 2013-04-04

Description

本発明のフォトマスクにおいて、転写パターンは、ウェットエッチングによる透明導電膜形成用であることが好ましい。 In the photomask of the present invention, the transfer pattern is preferably for forming a transparent conductive film by wet etching.

転写パターン部１０２は、透明基板１０１上に成膜された半透光膜をパターニングすることにより形成された透光部と半透光部で形成することができる。転写パターン部１０２を、ライン・アンド・スペース・パターンで形成する場合には、ラインパターンを半透光部１０２ａで形成し、スペースパターンを透光部１０２ｂで形成すればよい。 The transfer pattern part 102 can be formed of a translucent part and a semi-transparent part formed by patterning a semi-transparent film formed on the transparent substrate 101. The transfer pattern portion 102, in the case of forming a line-and-space pattern, line pattern formed by the semi-light-transmitting portion 102a, may be formed a space pattern with transparent portion 102b.

一方で、図５に示すように、フォトマスク５００のラインパターンを遮光部ではなく半透光部５０１で形成することにより、フォトマスク５００のライン・アンド・スペース・パターンのピッチ幅が小さくなった場合であっても、透光部５０２（スペースパターン）を介してレジスト膜５０４に照射される透過光の強度が低下することを抑制し、現像後に透光部５０２を介して露光されたレジスト膜５０４を除去することができる。これは、ラインパターンを半透光部５０１で形成することにより、フォトリソグラフィ工程における露光量を増加させるのと同等の効果が得られるためである。これにより、従来フォトリソグラフィ工程で適用可能である露光量で（露光量を変えることなく、又はより少ない露光量で）、所望の微細パターンを形成することが可能となる。 On the other hand, as shown in FIG. 5, the pitch width of the line and space pattern of the photomask 500 is reduced by forming the line pattern of the photomask 500 with the semi-translucent portion 501 instead of the light shielding portion. Even in this case, it is possible to suppress a reduction in the intensity of transmitted light applied to the resist film 504 through the light transmitting part 50 2 (space pattern), and to expose the resist exposed through the light transmitting part 502 after development. The film 504 can be removed. This is because forming the line pattern by the semi-translucent portion 501 provides the same effect as increasing the exposure amount in the photolithography process. This makes it possible to form a desired fine pattern with an exposure amount that can be applied in a conventional photolithography process (without changing the exposure amount or with a smaller exposure amount).

また、被加工体５０３のエッチング加工として、ウェットエッチングを適用する場合には、ドライエッチングと比較して被加工体５０３が等方的にエッチングされる。つまり、エッチングの際に、レジストパターン５０５と重畳する被加工体５０３の側面もエッチング（サイドエッチング）される（図５（Ｃ）参照）。そのため、フォトマスク５００のライン・アンド・スペース・パターンのライン幅（半透光部５０１の幅）をＬＭ、スペース幅（透光部５０２の幅）をＳＭとするとき、エッチング加工後に被加工体５０３に形成されるライン・アンド・スペース・パターンのライン幅ＬＰはＬＭより小さくなり、スペース幅ＳＰはＳＭより大きくなる。 Further, when wet etching is applied as an etching process for the workpiece 503, the workpiece 503 is isotropically etched as compared with dry etching. That is, during etching, the side surface of the workpiece 503 that overlaps with the resist pattern 505 is also etched (side-etched) (see FIG. 5C). Therefore, when the line width of the line and space pattern of the photomask 500 (the width of the semi-translucent portion 501) is LM and the space width (the width of the translucent portion 502) is SM, the object to be processed after the etching process. The line width LP of the line and space pattern formed in 503 is smaller than LM, and the space width SP is larger than SM.

＜参考例２＞
バイアス部：＋０．８μｍ
ライン・アンド・スペース・パターンのピッチ幅：７．０μｍ（ライン幅：４．３μｍ、スペース幅：２．７μｍ）、６．０μｍ（ライン幅：３．８μｍ、スペース幅：２．２μｍ）、５．０μｍ（ライン幅：３．３μｍ、スペース幅：１．７μｍ）
ラインパターンの透過率：３％〜２０％ <Reference Example 2>
Bias part: + 0.8μm
Line-and-space pattern of pitch width: 7. 0 μm (line width: 4.3 μm, space width: 2.7 μm), 6.0 μm (line width: 3.8 μm, space width: 2.2 μm), 5.0 μm (line width: 3.3 μm, space width: 1.7 μm)
Line pattern transmittance: 3% to 20%

Claims

A photomask for manufacturing a liquid crystal display device having a transfer pattern for transferring to a resist film formed on a workpiece to be etched,
In the transfer region of the photomask, a transfer pattern including a line-and-space pattern made up of a translucent part and a semi-transparent part obtained by patterning a semi-transparent film formed on a transparent substrate is provided. Have
A photomask having a mark pattern obtained by patterning a light-shielding film formed on the transparent substrate outside the transfer region of the photomask.

The photomask according to claim 1, wherein the transfer pattern is for forming a transparent conductive film by wet etching.

The photomask forms a line-and-space pattern having the same line width LP and space width SP on the workpiece by etching, and the transfer pattern of the photomask has a line width LM. The photomask according to claim 1, wherein the photomask includes a line and space pattern larger than the space width SM.

4. The photomask according to claim 1, wherein the line-and-space pattern has a pitch, which is a sum of line widths of lines and spaces, of 2 μm or more and less than 7 μm. 5.

5. The photomask according to claim 1, wherein the mark pattern includes a light-transmitting portion from which the transparent substrate is exposed and a light-shielding portion from which the light-shielding film is exposed.

The photo according to any one of claims 1 to 4, wherein the transmissivity of the semi-translucent part is 1% or more and 30% or less when the transmissivity of the translucent part is 100%. mask.

A method for producing a photomask having a transfer pattern including a line and space pattern in a transfer region, and having a mark pattern outside the transfer region,
Forming a light shielding film on a transparent substrate;
Patterning the light shielding film to remove the light shielding film in the transfer region and forming a mark pattern outside the transfer region;
A step of forming a translucent film on the transparent substrate in a state where a mask is provided on the mark pattern;
And a step of patterning the semi-transparent film to form the transfer pattern formed by a translucent part and a semi-translucent part.

A method for producing a photomask having a transfer pattern including a line and space pattern in a transfer region, and having a mark pattern outside the transfer region,
Forming a translucent film on a transparent substrate;
Forming a light shielding film on the semi-transparent film;
A first resist pattern is formed by drawing and developing the transfer pattern and the mark pattern on a resist film formed on the light shielding film, and the light shielding film and the half pattern are formed using the first resist pattern. Forming a laminated pattern of the light-shielding film and the semi-transparent film by patterning the light-transmitting film;
Forming a second resist pattern so as to expose a laminated pattern of the light-shielding film and the semi-transparent film located in the transfer region after removing the first resist pattern;
By removing the light shielding film formed on the semi-transparent film using the second resist pattern, the transfer pattern formed from the translucent part and the semi-translucent part and the translucent part are exposed. And a step of forming a mark pattern formed from the light-shielding film pattern.

A method for producing a photomask having a transfer pattern including a line and space pattern in a transfer region, and having a mark pattern outside the transfer region,
Forming a translucent film with a mask provided outside the transfer region on the transparent substrate; and
Forming a light-shielding film on the semi-transparent film and the exposed transparent substrate;
A first resist pattern is formed by drawing and developing the transfer pattern and the mark pattern on a resist film formed on the light shielding film, and the light shielding film and the half pattern are formed using the first resist pattern. Patterning a light transmissive film to form a laminated pattern of the light shielding film and the semi-light transmissive film in the transfer region, and forming a light shielding film pattern outside the transfer region;
After removing the first resist pattern, forming a second resist pattern so that the laminated pattern of the transfer region is exposed;
By removing the light-shielding film formed on the semi-transparent film using the second resist pattern, a transfer pattern formed from the translucent part and the semi-transparent part, the translucent part and the light-shielding film And a step of forming a mark pattern formed from the pattern.

Using the photomask according to any one of claims 1 to 6 or the photomask according to the manufacturing method according to any one of claims 7 to 9, an i line to g is applied to a resist film on a workpiece. A pattern transfer method characterized in that a pattern having the same line and space width is processed by performing exposure with an exposure machine having an exposure light source in a range of lines and performing wet etching using the obtained resist pattern.