JP2009139975A5 - - Google Patents

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Publication number
JP2009139975A5
JP2009139975A5 JP2009027526A JP2009027526A JP2009139975A5 JP 2009139975 A5 JP2009139975 A5 JP 2009139975A5 JP 2009027526 A JP2009027526 A JP 2009027526A JP 2009027526 A JP2009027526 A JP 2009027526A JP 2009139975 A5 JP2009139975 A5 JP 2009139975A5
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Japan
Prior art keywords
film
gray
semi
transparent
manufacturing
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JP2009027526A
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Japanese (ja)
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JP2009139975A (en
JP4878379B2 (en
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Priority to JP2009027526A priority Critical patent/JP4878379B2/en
Priority claimed from JP2009027526A external-priority patent/JP4878379B2/en
Publication of JP2009139975A publication Critical patent/JP2009139975A/en
Publication of JP2009139975A5 publication Critical patent/JP2009139975A5/ja
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Publication of JP4878379B2 publication Critical patent/JP4878379B2/en
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Claims (9)

遮光部と、
前記遮光部と隣接する部分を有する透光部と、
露光光の一部を透過するグレートーン部とを有するグレートーンマスクの製造方法であって、
該グレートーン部を通過する光を低減し、露光したフォトレジストの膜厚を選択的に変えたのち、該フォトレジストの残存しない部分で被加工基板の第１のエッチングを行い、該グレートーン部に対応する、薄いフォトレジストの部分をアッシングにより除去してこの部分で第２のエッチングを行うことにより、一枚のマスクでマスク二枚分のエッチング工程を行えるものである大型LCD用のグレートーンマスクの製造方法において、
透明基板上に、少なくとも半透光膜、エッチングストッパー膜、遮光膜が順次形成され、レジスト膜が形成されたマスクブランクを準備する工程と、
前記レジスト膜に露光し、現像処理を行い、レジスト膜を加工する工程と、
レジストが除去された領域に露出する遮光膜をエッチングして除去する工程と、
透光部を形成すべき部分上の半透光膜と、半透光部を形成すべき部分上の遮光膜を同時に除去する工程と、
残ったレジスト膜を除去する工程を含む、
グレートーンマスクの製造方法。 A light shielding part;
A light-transmitting portion having a portion adjacent to the light-shielding portion;
A gray-tone mask manufacturing method having a gray-tone portion that transmits a part of exposure light,
After reducing the light passing through the gray tone portion and selectively changing the film thickness of the exposed photoresist, first etching of the substrate to be processed is performed on the portion where the photoresist does not remain, and the gray tone portion The gray tone for large LCDs that can be etched by two masks with one mask by removing the thin photoresist portion corresponding to the above by ashing and performing the second etching on this portion In the mask manufacturing method,
On the transparent substrate, at least a semi-transparent film, an etching stopper film, a light shielding film are sequentially formed, and a step of preparing a mask blank in which a resist film is formed;
Exposing the resist film, developing the resist film, and processing the resist film;
Etching and removing the light shielding film exposed in the region where the resist has been removed;
Removing the semi-transparent film on the portion where the translucent portion is to be formed and the light-shielding film on the portion where the semi-transparent portion is to be formed simultaneously;
Including a step of removing the remaining resist film,
A method for manufacturing a gray-tone mask. 前記透光部を形成すべき部分上の半透光膜と、半透光部を形成すべき部分上の遮光膜を同時に除去する工程は、エッチング液によるエッチングによることを特徴とする、請求項１記載のグレートーンマスクの製造方法。 The step of simultaneously removing the semi-transparent film on the portion where the translucent portion is to be formed and the light-shielding film on the portion where the semi-transparent portion is to be formed is performed by etching with an etchant. 2. A method for producing a gray-tone mask according to 1 . 前記半透光膜又は前記遮光膜は、クロム、クロム化合物、ＭｏＳｉ、Ｓｉ、Ｗ、Ａｌから選択されるいずれかを含むことを特徴とする、請求項１または２記載のグレートーンマスクの製造方法。 3. The method of manufacturing a gray-tone mask according to claim 1, wherein the semi-transparent film or the light-shielding film includes any one selected from chromium, a chromium compound, MoSi, Si, W, and Al. . 前記遮光膜と前記半透光膜は、クロムを含む材料からなることを特徴とする、請求項１〜３のいずれかに記載のグレートーンマスクの製造方法。 The method for manufacturing a gray-tone mask according to claim 1, wherein the light shielding film and the semi-transparent film are made of a material containing chromium . 前記遮光膜及び前記半透光膜は、クロムを含む材料からなり、前記クロム化合物は、酸化クロム、窒化クロム、酸窒化クロム、フッ化クロム、およびこれらに炭素又は水素を含むものから選ばれることを特徴とする、請求項1〜４のいずれか記載のグレートーンマスクの製造方法。 The light shielding film and the semi-transparent film are made of a material containing chromium, and the chromium compound is selected from chromium oxide, chromium nitride, chromium oxynitride, chromium fluoride, and those containing carbon or hydrogen. The method for producing a gray-tone mask according to claim 1, wherein: 前記グレートーンマスクの遮光部は、透明基板上に形成された半透光膜、エッチングストッパー膜、及び遮光膜を含み
前記グレートーン部は、前記透明基板上に形成された半透光膜を含むことを特徴とする、請求項１〜５のいずれか記載のグレートーンマスクの製造方法。 The light shielding part of the gray tone mask includes a semi-transparent film, an etching stopper film, and a light shielding film formed on a transparent substrate.
6. The method of manufacturing a gray tone mask according to claim 1, wherein the gray tone portion includes a semi-transparent film formed on the transparent substrate . 前記半透光膜は、透過率が２０〜５０％となる膜厚であることを特徴とする、請求項１〜６のいずれか記載のグレートーンマスクの製造方法。 The method of manufacturing a gray-tone mask according to claim 1, wherein the translucent film has a thickness of 20 to 50% . 前記エッチングストッパー膜が、ＳｉＯ2又はＳＯＧであることを特徴とする、請求項１〜７のいずれか記載のグレートーンマスクの製造方法。 The method for manufacturing a gray-tone mask according to claim 1, wherein the etching stopper film is made of SiO 2 or SOG . 前記グレートーンマスクがLCD用マスク又はPDP用マスクであることを特徴とする、請求項１〜８のいずれか記載のグレートーンマスクの製造方法。 9. The method of manufacturing a gray tone mask according to claim 1, wherein the gray tone mask is an LCD mask or a PDP mask .
JP2009027526A 2009-02-09 2009-02-09 Manufacturing method of gray tone mask Expired - Lifetime JP4878379B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009027526A JP4878379B2 (en) 2009-02-09 2009-02-09 Manufacturing method of gray tone mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009027526A JP4878379B2 (en) 2009-02-09 2009-02-09 Manufacturing method of gray tone mask

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2007166437A Division JP4700657B2 (en) 2007-06-25 2007-06-25 Gray tone mask and manufacturing method thereof

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010245051A Division JP4840834B2 (en) 2010-11-01 2010-11-01 Gray tone mask and manufacturing method thereof

Publications (3)

Publication Number Publication Date
JP2009139975A JP2009139975A (en) 2009-06-25
JP2009139975A5 true JP2009139975A5 (en) 2009-10-22
JP4878379B2 JP4878379B2 (en) 2012-02-15

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Family Applications (1)

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JP2009027526A Expired - Lifetime JP4878379B2 (en) 2009-02-09 2009-02-09 Manufacturing method of gray tone mask

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JP (1) JP4878379B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6157832B2 (en) * 2012-10-12 2017-07-05 Hoya株式会社 Electronic device manufacturing method, display device manufacturing method, photomask manufacturing method, and photomask
JP6302502B2 (en) * 2016-04-15 2018-03-28 Hoya株式会社 Electronic device manufacturing method, display device manufacturing method, photomask manufacturing method, and photomask

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6318351A (en) * 1986-07-11 1988-01-26 Hitachi Micro Comput Eng Ltd Mask for pattern formation
US4770947A (en) * 1987-01-02 1988-09-13 International Business Machines Corporation Multiple density mask and fabrication thereof
US5213916A (en) * 1990-10-30 1993-05-25 International Business Machines Corporation Method of making a gray level mask
JP2814847B2 (en) * 1992-07-30 1998-10-27 日本電気株式会社 Method for manufacturing multi-stage phase shift reticle
JPH0749410A (en) * 1993-08-06 1995-02-21 Dainippon Printing Co Ltd Gradation mask and its manufacture
JP3438426B2 (en) * 1995-08-22 2003-08-18 ソニー株式会社 Phase shift exposure mask
JPH0980740A (en) * 1995-09-14 1997-03-28 Ricoh Co Ltd Exposure mask and production of semiconductor device
US5914202A (en) * 1996-06-10 1999-06-22 Sharp Microeletronics Technology, Inc. Method for forming a multi-level reticle
JP3080023B2 (en) * 1997-02-20 2000-08-21 日本電気株式会社 Photomask for exposure
JP3064962B2 (en) * 1997-06-19 2000-07-12 日本電気株式会社 Halftone phase shift mask, mask blanks thereof, and method of manufacturing halftone phase shift mask and defect correction method
JP3253590B2 (en) * 1998-08-31 2002-02-04 シャープ株式会社 Manufacturing method of halftone mask
JP2000181048A (en) * 1998-12-16 2000-06-30 Sharp Corp Photomask, its production and exposure method using the same
JP4292350B2 (en) * 1999-04-22 2009-07-08 栄 田中 Liquid crystal display device and manufacturing method thereof

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