JP3438426B2 - Phase shift exposure mask - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] [0001] The present invention relates to:Phase shift exposure
SchoolAbout. The present invention relates to, for example, a semiconductor device manufacturing process.
About the photomask used in the process
You. [0002] 2. Description of the Related Art Conventionally, the phases are different from each other (the
The part that transmits light (ideally, the phase is inverted by 180 °)
So-called phase shift mask that performs exposure with good resolution
Disc technology is known. For example, a light transmitting portion and a semi-light shielding portion (half
Is known.
Have been. This type is a halftone phase shift
It is called a mask. This kind of phase shift mask is
Usually has an opening that forms a light transmission part and a slight light transmittance
And a semi-light-shielding portion.
It is made of a phase shift material so that a phase difference of 0 ° is given.
Phase shift unit (referred to as a shifter)
You. In this way, the resolution is increased by the interference
As well as improving the transmittance other than the openings, for example,
By keeping it at 10%, resolution or registration of this part
To prevent the film from becoming thinner. A halftone type phase shift mask is usually a mask.
Better in resolution, depth of focus, etc.
Demonstrate the characteristics. That is, a halftone type phase shift mask is
Is a mask as shown in FIG. 20 and FIG.
Shifter for inverting the phase around the light transmitting portion 1
(Phase shifter layer 3), thickness of light-shielding body such as Cr
To form a halftone layer 4 by thinning
A semi-transmissive part 2 for transmitting the exposure light
It means a disc. The semi-transmissive portion 2 (shifter portion)
Light 10 is of such intensity that the resist is not exposed.
(For example, a transmittance of 10%) to form the light transmitting portion 1 of the mask.
Interference with light 9 transmitted through the opening (for example, transmittance 100%)
To improve the light intensity distribution and improve the resolution and depth of focus.
Have the function of making. This method is more capable than other methods
EB is superimposed when creating a mask
There is no need for drawing and there is a high degree of freedom in layout
Layer, such as contact holes
Is being put to practical use. [0006] However, in the conventional method,
FIG. 21 (or FIG. 22)
Light transmitted through the transmissive area or semi-transmissive area
The solution is obtained by reflecting at the step and focusing at a certain area.
May be imaged. Such halation and membrane
Desired pattern cannot be obtained due to reduction
There was a problem. That is, this half is used for the actual device pattern.
After applying the tone mask, the exposure
Under the influence of so-called halation, where light is reflected,
Observation of a phenomenon where parts that originally have no pattern are resolved
(FIGS. 21 and 22). 21 and FIG.
Is a resist, 7 is a silicon oxide film to be exposed, 71 is the same.
Si wafer, 72 is a step on the Si wafer, 8
Is lower layer wiring, 9 is transmitted light from the light transmitting portion, 10 is semi-transmitted
Transmitted light from the part, 11 indicates a hole pattern,
9 'indicates reflected light, 12 indicates film reduction due to halation.
You. Halation is a halftone phase shift due to its nature.
May occur even if the mask is not
Normally, the mask has a synergistic effect with the light leaking from the
There is a problem in that the resolution becomes easier than in the above. Actually
Exposure uses a stepper, so the exposure light is
Although the pattern is reduced through the system, in FIG.
The part of the eye is omitted. [0008] SUMMARY OF THE INVENTION The present invention relates to the above prior art.
To solve the problem of the operation,
Contributes to halation, for example, patterning
Halation due to extra transmitted light, and
Resist film loss, etc.
Phase shift exposure mask that can obtain pattern shape
And a method for producing the same. [0009] SUMMARY OF THE INVENTIONPhase shift exposure
The mask has the following configuration.
Exposure maskIt is. [0010] [0011] [0012] [0013] According to the phase shift exposure mask of the present invention, light transmission
Part, and transmission of exposure light from the light transmitting part adjacent to the light transmitting part.
A light-transmitting part and a semi-transmitting part.
Phase shift that allows exposure light to pass through with different phases
In the light exposure mask, the material to be exposed
Corresponding to the part where the amount of light that absorbs the exposure light increases
Light transmittance of the other semi-transmission part
And a phase shift exposure mask. [0015] [0016] The phase shift exposure mask of the present invention and its manufacturing method
According to the method, halftone phase shift mask
To completely block areas that are more than a certain distance from the transmission area
To absorb the exposure light of the material to be exposed.
Of the semi-transmissive part of the part with respect to the part where the amount of light
The light transmittance is smaller than the light transmittance of the other semi-transmission part, and
Is a pattern that makes the phase of the part different from that of the other translucent part.
Does not contribute to patterning by forming
Halation due to excess transmitted light, resist film loss
A good pattern shape by preventing
It will be possible if possible. [0017] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below.
The description will be further given with reference to the drawings of specific embodiments of the present invention.
By reference to the description, preferred embodiments of the present invention are described.
The form will be described in detail. However, it goes without saying that the present invention
The present invention is not limited by the embodiments described below. The phase shift exposure mask of the present invention has a first
A light transmitting portion and a semi-transmitting portion adjacent to the light transmitting portion.
The light transmitting portion and the semi-transmitting portion have different phases from each other.
A phase shift exposure mask that transmits exposure light through
An outer region that does not contribute to the exposure of the semi-transmissive portion is defined as a light-shielding portion.
A phase shift exposure mask, characterized in that
Achieves the above-mentioned objectives by the following:
Such an embodiment can be adopted. According to the phase shift exposure mask of the present invention, the exposure light
Light consisting only of a substrate made of, for example, quartz transparent to
A transmitting portion, a semi-transmitting layer on the substrate around the light transmitting portion,
A position where light is transmitted with a phase different from that of the light transmitting portion.
Phase shifter layer (d = kλ / 2 for wavelength λ of exposure light)
(N-1) (n is the bending of the phase shifter with respect to the exposure wavelength λ.
(Where k is an odd integer)
Layer) and the transmittance is lower than that of the transmission part.
A semi-transmissive phase shifter whose phase is inverted,
The remaining area around the phase shift section is further covered with a light shielding layer.
Cover (completely shaded or further reduced transmittance)
And a light-shielding portion.
This can be done in the form of a mask. The phase shift exposure mask of the present invention can
Exposure light consisting of, for example, a quartz substrate transparent to other light
The light transmitted through the transmission part with a different phase from that of the transmission part (wave of exposure light
D = kλ / 2 (n-1) (where n is quartz exposure)
Refractive index for wavelength λ, k is an odd integer))
Transmissive part and a semi-transmissive layer on the quartz substrate around the transmissive part
The transmittance is lower than that of the transmitting part and the phase is inverted.
A semi-transmissive phase shift section,
The remaining area of the enclosure is further covered by a light-blocking layer (completely
Light-shielding part (which has light or has further reduced the transmittance)
This is implemented in the form of a phase shift exposure mask
can do. Method for manufacturing phase shift exposure mask
Is a semi-transmissive layer, a phase shifter layer and a light shielding layer on a quartz substrate.
And forming an electron beam resist on the light-shielding layer.
To perform pattern drawing and phenomena by electron beam,
Using the obtained resist pattern as a mask, wet etching
Put on the light-shielding layer by etching or dry etching
Transferring the resist and removing the remaining resist;
An electron beam resist is formed on the optical layer pattern and
Pattern drawing and development, and
A resist pattern is formed on the inside by a certain distance
Dry etching using the distaste pattern as a mask
The pattern is sequentially transferred to the phase shifter layer and the semi-transmissive layer,
Removed remaining resist.
can do. Method for manufacturing phase shift exposure mask
Is a semi-transmissive layer, etching stopper layer and
A step of sequentially forming a film and a light shielding layer;
Film resist, electron beam pattern drawing and development
And use the resulting resist pattern as a mask
Light-shielding layer by wet etching or dry etching
Transfer the pattern to
The exposed etching stopper layer is removed, and the remaining resist
Removing the laser beam and electron beam laser on the light shielding layer pattern.
Gist is formed and pattern drawing and development with electron beam are performed.
The inside of the light-shielding layer is
Forming a resist pattern, and using the resist pattern as a mask.
Etching stopper layer by dry etching and
The pattern is sequentially transferred to the semi-transmissive layer, and the remaining resist is removed.
And a removing step. In this case, the semi-transmissive layer and the light-shielding layer are
r can be formed by a reactive sputtering method. is there
Or other high melting point metals or their oxides
Can be formed. In this case, the etching stopper
-Layer as SiO_TwoTo sputtering or CVD
A film can be formed more. Specific examples are described below.
Bell. Embodiment 1 In this embodiment, the present invention is applied to a manufacturing process of a semiconductor device.
Of the photomask structure and its manufacturing method
It is a thing. FIG. 1 shows the structure of the photomask of this embodiment.
FIGS. 2 to 7 are diagrams schematically showing the manufacturing method.
It is. FIG. 8 is an operation explanation for showing the effect of this embodiment.
FIG. FIG. 1 shows a phase shift exposure mask of this embodiment.
(A) shows the upper surface, and FIG. 1 (b) shows the cross section.
Thus, the light transmitting portion 1 'and the half adjacent to the light transmitting portion 1'
A light transmitting portion 1 ', a semi-transmitting portion 2',
Phase shifts the exposure light through
Outside the semi-transmissive portion 2 '
The (outer region not contributing to exposure) is defined as a light shielding portion 13. Further, the phase shift exposure mask of this embodiment
Specifically, as shown in FIGS. 1A and 1B,
Light transmitting portion consisting only of quartz substrate 5 'transparent to light
1 'and a semi-transmissive layer on the quartz substrate 5' around the light transmitting portion
4 '(halftone layer) and exposure light
A phase shifter layer that transmits light with different phases
For a wavelength λ, d = kλ / 2 (n−1) (n is a phase shift
Index of refraction for the exposure wavelength λ, where k is an odd integer)
The phase shifter layer having a thickness d represented by 3)
The transmittance is lower than that of the transmission part and the phase is inverted.
A transflective phase shift unit 2 'and the transflective phase shift unit 2'
The remaining area around the
(Either completely shaded or further reduced transmittance)
An optical unit 13 is provided. Manufacturing method of the phase shift exposure mask of this embodiment
The method is as shown in FIGS. 2 to 7 on a quartz substrate 5 '.
The semi-transmissive layer 4 ', the phase shifter layer 3' and the light-shielding layer 14 are sequentially arranged.
Next, a step of forming a multilayer film (FIG. 2), and
Film resist, electron beam pattern drawing and development
To form a resist pattern 15 (FIG. 3).
Using the resist pattern 15 as a mask,
The light shielding layer 14 by etching or dry etching.
The pattern is transferred to form a light-shielding layer pattern 14 '.
4) removing the remaining resist (FIG. 5);
An electron beam resist is formed on the light shielding layer pattern 14 ',
Perform pattern drawing and development using the sagittal wire, and
The resist is located a certain distance inside the opening of the
A pattern 15 'is formed, and the resist pattern 15'
Phase shifter layer by dry etching as a mask
The pattern is sequentially transferred to the 3 'and the semi-transmissive layer 4' (FIG.
6), a step of removing the remaining resist (FIG. 7)
You. In this case, in this embodiment, the semi-transmissive layer 4 ',
4 "and the light shielding layers 14 and 14 'are formed by reactive sputtering of Cr.
It can be formed by a method. The phase shifter layers 3 'and 3 "are coated
After spin coating glass (SOG), baking
Can be formed. The steps of this embodiment will be described in more detail.
Then, it is as follows. Please refer to FIG. 2 to FIG.
You. First, on the quartz substrate 5 ', there is transparent light for exposure light.
Cr-based halftone film so that the excess ratio is about 10%
4 'is formed by controlling the film thickness by reactive sputtering.
You. Next, SOG is spin-coated and baked on the halftone layer 4 '.
D = kλ / 2 (n−1) with respect to the wavelength λ of the exposure light.
(N is the refractive index of the SOG with respect to the exposure wavelength λ, and k is an odd number
Phase shifter layer so as to have a film thickness d represented by an integer.
3 'is formed. Further, about 10 μm is formed on the phase shifter layer 3 ′.
0 nm Cr-based light shielding film 14 is the same as halftone film 4 ′
Is formed. Thus, the structure shown in FIG. 2 is obtained. An electron beam resist (on this embodiment)
In this example, a positive mold was used) and spin-coated and baked to form a film
After that, pattern drawing, development and baking by electron beam are performed.
To form a desired resist pattern 15
(FIG. 3). However, this resist pattern 15 is half
Mask from tone film pattern 4 ″ (see FIGS. 6 and 7)
An opening is made larger by about 1 μm on one side. And resister
Cerium ammonium nitrate using Turn 15 as a mask
Etching using a system or CCl_Four, CH
_TwoCl_Two, Cl_TwoDry etching using chlorine-based gas such as
A light-shielding pattern 14 'is formed by ching (FIG. 4).
After that, the ashing process using chlorine plasma
The strike 15 is removed (FIG. 5). Next, on this pattern
Electron beam resist coating and film formation, alignment by electron beam
After drawing, developing and baking, the resist pattern
15 'is formed. And this resist pattern 1
CHF with 5 'as a mask_Three/ O_TwoFluorine gas such as
Phase shifter pattern by dry etching
3 ", and then the same method as that for the light shielding layer 14 described above.
The halftone layer 4 'is etched by using
4 "is formed (FIG. 6).
Resist 15 'is removed by ashing
(FIG. 7). Thus, the photomask shown in FIG.
Get. As a result of exposure using this photomask,
Problem with conventional halftone phase shift masks
Halation and film reduction due to reflection 9 'from the base are
The resolution shown in FIG.
By reducing the transmitted light between the patterns as described above,
It becomes possible to suppress. Note that the reference numerals in FIG.
It corresponds to the code of 1. According to this embodiment, the halftone type phase shifter is used.
Reduced the effect of improving the resolution and depth of focus by the shift mask.
Halation due to transmitted light in the semi-transmissive area without causing
・ Effects such as film thinning are suppressed, and fine patterns can be accurately formed.
Can be formed. This structure is a rim type phase shift mask.
The manufacturing method is similar, but the sum of the transmission region and the phase shift region
Stricter accuracy than the rim type phase shift mask
No processing is required and processing is easy. Embodiment 2 Next, a second embodiment of the present invention will be described. FIG.
10 to FIG. 15 and FIG. FIG. 9 shows a phase shift exposure mask of this embodiment.
(A) As shown in (b), the light transmitting portion 1 'and the light transmitting portion 1'
A semi-transmissive portion 2 'adjacent to the portion 1'.
1 ′ and semi-transmissive portion 2 ′ are exposed with different phases.
In a phase shift exposure mask that transmits light,
Light shields the outer area (outer area that does not contribute to exposure) of the transmission part 2 ′
It is referred to as part 13. The phase shift exposure mask of this embodiment
A quartz substrate 5 'transparent to light is exposed to another light transmitting portion.
And a phase different from that of the transmitted light (to the wavelength λ of the exposure light)
On the other hand, d = kλ / 2 (n−1) (n is an exposure wavelength λ of quartz.
Index, k is an odd integer))
A transmissive portion 1 'and a semi-transmissive portion on the quartz substrate 5' around the transmissive portion.
An overlayer 4 '(halftone layer) having a transmittance of the light transmission
Semi-transmission phase shifter whose phase is inverted with respect to the section 1 '
And the remaining portion around the transflective phase shift portion 2 '
The area was further covered with a light-shielding layer 14 (completely shielded from light).
Or the light-shielding part 13 whose transmittance has been further reduced)
Is provided. Manufacturing method of the phase shift exposure mask of this embodiment
As shown in FIGS. 10 to 15, the quartz substrate 5 '
The semi-transmissive layer 4 ', the etching stopper layer 17, and the shielding
A step of sequentially laminating and forming the optical layer 14 (FIG. 10);
An electron beam resist is formed on the layer 14 and patterned by an electron beam.
Pattern drawing and phenomena to form a resist pattern 16
(FIG. 11), using the obtained resist pattern 16 as a mask
Then, as shown in FIG.
Transfer pattern to light shielding layer 14 by dry etching
(The obtained light-shielding layer pattern is indicated by 14 '), and
Etching stopper exposed by dry etching
Layer 17 is removed and the remaining resist 16 is removed.
(FIG. 13) and (partially removed etching stock).
The light-shielding layer pattern is indicated by reference numeral 17 ').
Deposits a beam resist and draws a pattern with an electron beam.
Elephant, and a certain distance inside from the opening of the light shielding layer
A resist pattern 16 'is formed on the substrate (FIG. 14).
Dry etching using the strike pattern 16 'as a mask
The substrate 5 'is dug further to remove the remaining resist.
(FIG. 15). In this case, in this embodiment, the semi-transmissive layer
4 ', 4 "and the light shielding layers 14, 14'
It can be formed by a putter method. Or the
Formed of other refractory metals or their oxides, etc.
Can be In this case, the etching stopper
As the layers 15 and 15 ', SiO_TwoThe sputtering method or
It can be obtained by forming a film by a CVD method. The steps of this embodiment will be described in more detail.
Then, it is as follows. 9 and 10 to 15
See FIG. 9 shows a photomask according to an embodiment of the present invention.
FIGS. 10 to 15 schematically show the manufacturing method.
FIG. FIG. 16 is an operation theory showing the effect of this embodiment.
FIG. First, on the quartz substrate 5 ', there is transparent light for exposure light.
Cr-based halftone film so that the excess ratio is about 10%
4 'is formed by controlling the film thickness by reactive sputtering.
You. Next, an etching stopper is formed on the halftone layer 4 '.
Layer 17 as SiO_TwoBy the bias ECRCVD method
To form a film. Further, on the etching stopper layer 17,
A Cr-based light-shielding film 14 of about 100 nm is replaced with a halftone film 4 '.
Is formed in the same manner as described above. Thus, the structure shown in FIG. 10 is obtained. An electron beam resist (on this embodiment)
In this example, a positive mold was used) and spin-coated and baked to form a film
After that, pattern drawing, development and baking by electron beam are performed.
To form a desired resist pattern 16
(FIG. 11). However, this resist pattern 16 will be described later.
From the halftone film pattern 4 ″ (see FIG. 15).
The opening is made larger by about 1 μm on one side of the work. And resist
Using pattern 16 as a mask, cerium ammonium nitrate
Wet etching using system or CCl_Four, C
H_TwoCl_Two, Cl_TwoDryer using chlorine-based gas such as
After forming the light-shielding pattern 14 'by etching,
CHF_Three/ O_TwoDryer using fluorine-based gas such as
The etching stopper layer 17 exposed by the etching is removed.
Removed (FIG. 12. Etch strike partially removed)
The upper layer is indicated by reference numeral 17 '). A by oxygen plasma
The resist 16 is removed by a washing process (FIG. 1).
3). Next, an electron beam resist is applied on this pattern.
Alignment drawing, development and baking by electron beam
To form a resist pattern 16 '(FIG. 1).
4). Then, this resist pattern 16 'is used as a mask.
Then, the halftone layer is formed in the same manner as the light shielding layer 14 described above.
4 ', followed by CHF_Three/ O_TwoSuch as
Exposed by dry etching using fluorine-based gas
The quartz substrate 5 'is d = k [lambda] / 2 with respect to the wavelength [lambda] of the exposure light.
(N-1) (n is the refractive index of quartz for the exposure wavelength λ, k
Is an odd integer).
The resist 16 'is removed by ashing treatment using plasma.
(FIG. 15). In this way, the font shown in FIG.
Obtain a mask. As a result of exposure using this photomask,
Problem with conventional halftone phase shift masks
Halation and film reduction due to reflection 9 'from the base are
As shown in FIG.
The transmitted light between the patterns is reduced
It becomes possible to suppress. The symbols in FIG.
This corresponds to the reference numeral 21. According to this embodiment, the halftone type phase shifter is used.
Reduced the effect of improving the resolution and depth of focus by the shift mask.
Halation due to transmitted light in the semi-transmissive area without causing
・ Effects such as film thinning are suppressed, and fine patterns can be accurately formed.
Can be formed. This embodiment also has a rim type phase shifter.
The manufacturing method is similar to the mask, but the transmission area and the phase shift area
Area matching is as strict as rim type phase shift mask
Processing is easy without requiring high precision. Embodiment 3 In the present embodiment, as shown in FIG.
The hole pattern 11 is formed on the step 72 using a mask.
When exposing (exposed part)
Due to the irregular reflection of light, for example, reflected light 9 ′ is generated,
A resist as indicated by reference numeral 12 in a portion to be shielded from light
May be exposed (this effect is caused by the underlying structure and resist
Depending on characteristics, halftone phase shift mask
Now, the part that should be shaded has a certain degree of transmittance
The reflected light and transmitted light in synergy
May be greater than this effect).
To reduce the effects of such halation.
You. Here, as a method of reducing such effects,
The photosensitive area due to the above effect is determined by the underlying structure
In the part where it appears, a fine pattern that makes the phase different
In the same way that the area is actually shaded
By doing so, the effect can be reduced. Concrete
Specifically, in the present embodiment, as shown in FIG.
No fine pattern 20 on the mask corresponding to the photosensitive portion
Is realized in the semi-transmissive portion 4 ′. That is
Such a fine pattern 20 is affected by halation.
Place it where it appears. This fine pattern 20 is
4 'means that light is transmitted by changing the phase.
Note that this position is a position where the underlying structure can be considered.
It can be automatically generated on the mask as determined by the emulator.
Wear. The fine pattern 20 is made of, for example, KrF
In the case of exposure with a kisima laser beam, 0.0
If 9μm hole pattern is spread at 1: 1 pitch
Good things have been confirmed. In addition, actually
Is larger than the part where the light intensity increases
Preferably, the critical area is shielded from light by this method. The pattern resulting from the effect of halation is shown in FIG.
In some cases, such as a point as shown in FIG.
It may be a line as shown in (b). If it is a point,
One turn may be used, but in the case of a line,
Make a structure to arrange the turns. Or alignment error
In consideration of
You may. This part can take into account the underlying structure
Can be specified using a simple simulator.
Therefore, patterns can be automatically generated.
You. Embodiment 4 This embodiment is different from the third embodiment in that
By reducing the transmittance of the disk,
This was implemented to prevent the effects of Immediately
In other words, the influence of halation as described above is reduced by mask transparency.
It was made to suppress by reducing the excess rate. FIG.
Reference is made to FIG. In this embodiment, the EB drawing
After the pattern is formed, the transmittance is
Create a part with reduced. First, positive resist for EB
Apply 16 "again and form a light-shielding body by EB drawing
Open the part you want. Use this resist as a mask (1) Sputter a light-shielding body such as chrome (reference numeral 18).
a), formed by lift-off, etc. (2) Ga⁺A predetermined amount of ions such as
b) By reducing the transmittance of the quartz substrate By lowering the light transmittance of this part by a method such as
Can be created. FIG. 19 is a diagram showing the sputtering and
Although ion implantation is shown at the same time, both steps are actually separate.
Will be implemented. As described above, according to the present embodiment,
Phase shift method is applied to a pattern on a real device with steps.
It has become possible to use it favorably for forming a film. [0059] According to the present invention, a halftone type phase shifter is provided.
Haft masks, such as paternin
Halation due to extra transmitted light that does not contribute to
This prevents resist film loss, etc.
And a good pattern shape can be obtained.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram illustrating a configuration of a phase shift mask according to a first embodiment. FIG. 2 is a sectional view showing the steps of the first embodiment in order (1). FIG. 3 is a sectional view showing the steps of the first embodiment in order (2). FIG. 4 is a sectional view showing the steps of the first embodiment in order (3). FIG. 5 is a sectional view showing the steps of the first embodiment in order (4). FIG. 6 is a sectional view showing the steps of the first embodiment in order (5). FIG. 7 is a sectional view showing a step of the first embodiment in order (6). FIG. 8 is an operation explanatory view of the first embodiment. FIG. 9 is a diagram illustrating a configuration of a phase shift mask according to a second embodiment. FIG. 10 is a sectional view showing the steps of the second embodiment in order (1). FIG. 11 is a sectional view showing a step of the second embodiment in order (2). FIG. 12 is a sectional view showing the steps of the second embodiment in order (3). FIG. 13 is a sectional view showing a step of Example 2 in order (4). FIG. 14 is a sectional view showing a step of the second embodiment in order (5). FIG. 15 is a sectional view showing a step of Example 2 in order (6). FIG. 16 is an operation explanatory view of the second embodiment. FIG. 17 is a diagram illustrating a configuration of a phase shift mask according to a third embodiment. FIG. 18 is a diagram illustrating a third embodiment. FIG. 19 is a diagram illustrating a fourth embodiment. FIG. 20 is a diagram showing a conventional example. FIG. 21 is a diagram illustrating a problem of a conventional example. FIG. 22 is a diagram illustrating a problem of a conventional example. [Description of Signs] 1 'light transmitting portion 2' semi-transmitting portion 13 light-shielding portion 3 ', 3 "phase shifter layer 4' semi-transmitting layer (halftone layer) 5 'transparent substrate (quartz substrate) 6 resist 6' resist pattern 7 Silicon oxide film 71 Si wafer 72 Step 8 Lower wiring (step) 9 'Reflected light 14 Semi-shielding film 15 Resist pattern 15' Resist pattern 16 Resist pattern 16 'Resist pattern 16 "Resist pattern 17 Etching stopper layer 18a Processing for lowering (sputtering of Cr etc.) 18b Processing for lowering light transmittance (ion implantation of Ga ⁺ etc.) 20 Fine pattern

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-7-128840 (JP, A) JP-A-6-337514 (JP, A) JP-A-3-78747 (JP, A) 209474 (JP, A) JP-A-6-308715 (JP, A) JP-A-7-261375 (JP, A) JP-A-7-281413 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) G03F 1/00-1/16

Claims (1)

(57) Claims: 1. A light transmitting portion, comprising: a semi-transmitting portion adjacent to the light transmitting portion and having a lower transmittance of exposure light than the light transmitting portion; A semi-transmissive part is a phase shift exposure mask that transmits exposure light with different phases from each other. In the semi-transmissive part, the light transmittance of a part corresponding to a part of the material to be exposed corresponding to a part where the amount of light that absorbs exposure light is large. Is smaller than the light transmittance of the other semi-transmissive portion.