JP2014099602A5 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor device Download PDFInfo
- Publication number
- JP2014099602A5 JP2014099602A5 JP2013215931A JP2013215931A JP2014099602A5 JP 2014099602 A5 JP2014099602 A5 JP 2014099602A5 JP 2013215931 A JP2013215931 A JP 2013215931A JP 2013215931 A JP2013215931 A JP 2013215931A JP 2014099602 A5 JP2014099602 A5 JP 2014099602A5
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- JP
- Japan
- Prior art keywords
- electrode layer
- drain electrode
- source electrode
- conductive film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims 7
- 238000004519 manufacturing process Methods 0.000 title claims 4
- 238000010894 electron beam technology Methods 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
Claims (3)
前記酸化物半導体層上に、第１のソース電極層及び第１のドレイン電極層を形成し、Forming a first source electrode layer and a first drain electrode layer on the oxide semiconductor layer;
前記第１のソース電極層及び前記第１のドレイン電極層上に、導電膜を形成し、Forming a conductive film on the first source electrode layer and the first drain electrode layer;
電子ビーム露光を用いて前記導電膜をエッチングして、第２のソース電極層及び第２のドレイン電極層を形成することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein the conductive film is etched using electron beam exposure to form a second source electrode layer and a second drain electrode layer.
前記酸化物半導体層上に、第１のソース電極層及び第１のドレイン電極層を形成し、Forming a first source electrode layer and a first drain electrode layer on the oxide semiconductor layer;
前記第１のソース電極層及び前記第１のドレイン電極層上に、第１の導電膜を形成し、Forming a first conductive film on the first source electrode layer and the first drain electrode layer;
前記第１の導電膜をエッチングして、前記第１のソース電極層及び前記第１のドレイン電極層を覆う形状となる第２の導電膜を形成し、Etching the first conductive film to form a second conductive film having a shape covering the first source electrode layer and the first drain electrode layer;
電子ビーム露光を用いて前記第２の導電膜をエッチングして、第２のソース電極層及び第２のドレイン電極層を形成することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein the second conductive film is etched using electron beam exposure to form a second source electrode layer and a second drain electrode layer.
前記第１のソース電極層の端部及び前記第１のドレイン電極層の端部は、レジストマスクを後退させる工程とエッチングの工程とを行うことで、階段状に形成することを特徴とする半導体装置の作製方法。An end portion of the first source electrode layer and an end portion of the first drain electrode layer are formed in a step shape by performing a step of retracting a resist mask and an etching step. Device fabrication method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013215931A JP6246549B2 (en) | 2012-10-17 | 2013-10-17 | Method for manufacturing semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012230339 | 2012-10-17 | ||
| JP2012230339 | 2012-10-17 | ||
| JP2013215931A JP6246549B2 (en) | 2012-10-17 | 2013-10-17 | Method for manufacturing semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015246221A Division JP6188775B2 (en) | 2012-10-17 | 2015-12-17 | Semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014099602A JP2014099602A (en) | 2014-05-29 |
| JP2014099602A5 true JP2014099602A5 (en) | 2016-11-10 |
| JP6246549B2 JP6246549B2 (en) | 2017-12-13 |
Family
ID=50941342
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013215931A Expired - Fee Related JP6246549B2 (en) | 2012-10-17 | 2013-10-17 | Method for manufacturing semiconductor device |
| JP2015246221A Expired - Fee Related JP6188775B2 (en) | 2012-10-17 | 2015-12-17 | Semiconductor device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015246221A Expired - Fee Related JP6188775B2 (en) | 2012-10-17 | 2015-12-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JP6246549B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6246549B2 (en) * | 2012-10-17 | 2017-12-13 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| TWI663726B (en) * | 2014-05-30 | 2019-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, module, and electronic device |
| TWI718125B (en) | 2015-03-03 | 2021-02-11 | 日商半導體能源研究所股份有限公司 | Semiconductor device and manufacturing method thereof |
| WO2017006207A1 (en) | 2015-07-08 | 2017-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10504925B2 (en) * | 2016-08-08 | 2019-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| CN110544693B (en) * | 2018-05-29 | 2024-05-17 | 长鑫存储技术有限公司 | Method for manufacturing semiconductor memory cell and semiconductor memory cell |
| JP2020167188A (en) * | 2019-03-28 | 2020-10-08 | 株式会社ジャパンディスプレイ | Display device and manufacturing method thereof |
| WO2023209486A1 (en) * | 2022-04-29 | 2023-11-02 | 株式会社半導体エネルギー研究所 | Semiconductor device, and storage device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5445590B2 (en) * | 2009-11-13 | 2014-03-19 | 株式会社島津製作所 | Thin film transistor manufacturing method |
| KR102089200B1 (en) * | 2009-11-28 | 2020-03-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and manufacturing method thereof |
| KR101097322B1 (en) * | 2009-12-15 | 2011-12-23 | 삼성모바일디스플레이주식회사 | Thin film transistor, method of manufacturing the thin film transistor and organic electroluminiscent device having the thin film transistor |
| TWI562379B (en) * | 2010-11-30 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing semiconductor device |
| KR101995082B1 (en) * | 2010-12-03 | 2019-07-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Oxide semiconductor film and semiconductor device |
| KR20210034703A (en) * | 2011-01-28 | 2021-03-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing semiconductor device and semiconductor device |
| US8709920B2 (en) * | 2011-02-24 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP6246549B2 (en) * | 2012-10-17 | 2017-12-13 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
-
2013
- 2013-10-17 JP JP2013215931A patent/JP6246549B2/en not_active Expired - Fee Related
-
2015
- 2015-12-17 JP JP2015246221A patent/JP6188775B2/en not_active Expired - Fee Related
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