JP6800779B2 - 転写用マスクの製造方法、および半導体デバイスの製造方法 - Google Patents

転写用マスクの製造方法、および半導体デバイスの製造方法 Download PDF

Info

Publication number
JP6800779B2
JP6800779B2 JP2017041418A JP2017041418A JP6800779B2 JP 6800779 B2 JP6800779 B2 JP 6800779B2 JP 2017041418 A JP2017041418 A JP 2017041418A JP 2017041418 A JP2017041418 A JP 2017041418A JP 6800779 B2 JP6800779 B2 JP 6800779B2
Authority
JP
Japan
Prior art keywords
film
pattern
mask
transfer
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017041418A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018146760A5 (enExample
JP2018146760A (ja
Inventor
孝浩 廣松
孝浩 廣松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2017041418A priority Critical patent/JP6800779B2/ja
Publication of JP2018146760A publication Critical patent/JP2018146760A/ja
Publication of JP2018146760A5 publication Critical patent/JP2018146760A5/ja
Application granted granted Critical
Publication of JP6800779B2 publication Critical patent/JP6800779B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2017041418A 2017-03-06 2017-03-06 転写用マスクの製造方法、および半導体デバイスの製造方法 Active JP6800779B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2017041418A JP6800779B2 (ja) 2017-03-06 2017-03-06 転写用マスクの製造方法、および半導体デバイスの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017041418A JP6800779B2 (ja) 2017-03-06 2017-03-06 転写用マスクの製造方法、および半導体デバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2018146760A JP2018146760A (ja) 2018-09-20
JP2018146760A5 JP2018146760A5 (enExample) 2020-03-12
JP6800779B2 true JP6800779B2 (ja) 2020-12-16

Family

ID=63591110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017041418A Active JP6800779B2 (ja) 2017-03-06 2017-03-06 転写用マスクの製造方法、および半導体デバイスの製造方法

Country Status (1)

Country Link
JP (1) JP6800779B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021048329A (ja) 2019-09-19 2021-03-25 キオクシア株式会社 パターン形成方法及びテンプレートの製造方法
KR102444967B1 (ko) * 2021-04-29 2022-09-16 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR102392332B1 (ko) * 2021-06-08 2022-04-28 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1452009A (zh) * 2002-04-16 2003-10-29 林心迪 形成微影制程的相偏移光罩的方法
US7482280B2 (en) * 2005-08-15 2009-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming a lithography pattern
JP5144127B2 (ja) * 2007-05-23 2013-02-13 キヤノン株式会社 ナノインプリント用のモールドの製造方法
US9791779B2 (en) * 2014-10-16 2017-10-17 Tokyo Electron Limited EUV resist etch durability improvement and pattern collapse mitigation

Also Published As

Publication number Publication date
JP2018146760A (ja) 2018-09-20

Similar Documents

Publication Publication Date Title
TWI810176B (zh) 反射型光罩基底、反射型光罩及其製造方法、與半導體裝置之製造方法
TWI599841B (zh) Half-tone phase shift type mask blank, half-tone phase shift type mask and pattern exposure method
JP2022009220A (ja) 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
JP5317310B2 (ja) マスクブランク及び転写用マスクの製造方法
US8021806B2 (en) Photomask blank, photomask, and methods of manufacturing the same
KR20180048573A (ko) 마스크 블랭크, 위상 시프트 마스크 및 그 제조 방법, 그리고 반도체 디바이스의 제조 방법
JP2011164598A (ja) マスクブランク及び転写用マスクの製造方法
JP7106492B2 (ja) マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6271780B2 (ja) マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
CN110383167A (zh) 掩模坯料、转印用掩模的制造方法、以及半导体器件的制造方法
KR20170122181A (ko) 마스크 블랭크, 전사용 마스크, 전사용 마스크의 제조방법 및 반도체 디바이스의 제조방법
KR20220161165A (ko) 합금 기반 흡수재를 사용한 극자외선 마스크
TW201831987A (zh) 反射型光罩基底、反射型光罩及其製造方法、與半導體裝置之製造方法
WO2019230313A1 (ja) マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
KR20220157368A (ko) 마스크 블랭크 및 전사용 마스크의 제조 방법
WO2019230312A1 (ja) マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6800779B2 (ja) 転写用マスクの製造方法、および半導体デバイスの製造方法
JP6490786B2 (ja) マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
US20240069431A1 (en) Method of manufacturing photo masks
JP2022028476A (ja) マスクブランク、及びマスクの製造方法
JP2020042208A (ja) マスクブランク、転写用マスクおよび半導体デバイスの製造方法
JP6944255B2 (ja) 転写用マスクの製造方法、および半導体デバイスの製造方法
JP6991012B2 (ja) マスクブランク、マスクブランクの製造方法、および転写用マスクの製造方法
KR20240031182A (ko) 포토 마스크를 제조하는 방법
CN117348330A (zh) 制造光掩模的方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200127

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200127

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20201021

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20201117

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20201125

R150 Certificate of patent or registration of utility model

Ref document number: 6800779

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250