JP6043205B2 - マスクブランク、及び転写用マスクの製造方法 - Google Patents

マスクブランク、及び転写用マスクの製造方法 Download PDF

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Publication number
JP6043205B2
JP6043205B2 JP2013029741A JP2013029741A JP6043205B2 JP 6043205 B2 JP6043205 B2 JP 6043205B2 JP 2013029741 A JP2013029741 A JP 2013029741A JP 2013029741 A JP2013029741 A JP 2013029741A JP 6043205 B2 JP6043205 B2 JP 6043205B2
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JP
Japan
Prior art keywords
mask blank
thin film
mask
etching
ion
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Active
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JP2013029741A
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English (en)
Japanese (ja)
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JP2013218302A5 (enExample
JP2013218302A (ja
Inventor
鈴木　寿幸
寿幸 鈴木
山田　剛之
剛之 山田
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Hoya Corp
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Hoya Corp
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Publication of JP2013218302A5 publication Critical patent/JP2013218302A5/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2013029741A 2012-03-14 2013-02-19 マスクブランク、及び転写用マスクの製造方法 Active JP6043205B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013029741A JP6043205B2 (ja) 2012-03-14 2013-02-19 マスクブランク、及び転写用マスクの製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012057490 2012-03-14
JP2012057490 2012-03-14
JP2013029741A JP6043205B2 (ja) 2012-03-14 2013-02-19 マスクブランク、及び転写用マスクの製造方法

Publications (3)

Publication Number Publication Date
JP2013218302A JP2013218302A (ja) 2013-10-24
JP2013218302A5 JP2013218302A5 (enExample) 2016-03-10
JP6043205B2 true JP6043205B2 (ja) 2016-12-14

Family

ID=49160801

Family Applications (1)

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JP2013029741A Active JP6043205B2 (ja) 2012-03-14 2013-02-19 マスクブランク、及び転写用マスクの製造方法

Country Status (5)

Country Link
US (1) US20150111134A1 (enExample)
JP (1) JP6043205B2 (enExample)
KR (1) KR101862166B1 (enExample)
TW (1) TWI594064B (enExample)
WO (1) WO2013136882A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150079502A1 (en) * 2012-03-14 2015-03-19 Hoya Corporation Mask blank and method of manufacturing a transfer mask
KR102313892B1 (ko) * 2016-03-29 2021-10-15 호야 가부시키가이샤 마스크 블랭크, 마스크 블랭크의 제조 방법, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
JP6900872B2 (ja) * 2016-12-26 2021-07-07 信越化学工業株式会社 フォトマスクブランク及びその製造方法
JP6900873B2 (ja) * 2016-12-26 2021-07-07 信越化学工業株式会社 フォトマスクブランク及びその製造方法
WO2019058984A1 (ja) * 2017-09-21 2019-03-28 Hoya株式会社 マスクブランク、転写用マスク、及び半導体デバイスの製造方法
JP7379027B2 (ja) * 2019-09-04 2023-11-14 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
US11454876B2 (en) * 2020-12-14 2022-09-27 Applied Materials, Inc. EUV mask blank absorber defect reduction
KR102495224B1 (ko) * 2021-12-20 2023-02-06 에스케이엔펄스 주식회사 적층체의 제조방법 및 적층체

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4604292A (en) * 1985-04-26 1986-08-05 Spire Corporation X-ray mask blank process
JP2658966B2 (ja) * 1995-04-20 1997-09-30 日本電気株式会社 フォトマスク及びその製造方法
JP2003179034A (ja) * 2001-12-12 2003-06-27 Hitachi Ltd 半導体集積回路装置の製造方法
WO2003065433A1 (fr) * 2002-01-28 2003-08-07 Mitsubishi Chemical Corporation Detergent liquide pour substrat de dispositif semi-conducteur et procede de nettoyage
JP4304988B2 (ja) * 2002-01-28 2009-07-29 三菱化学株式会社 半導体デバイス用基板の洗浄方法
JP4061319B2 (ja) * 2002-04-11 2008-03-19 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法
US20070093406A1 (en) * 2005-10-24 2007-04-26 Omoregie Henryson Novel cleaning process for masks and mask blanks
EP2056333B1 (de) * 2007-10-29 2016-08-24 ION-TOF Technologies GmbH Flüssigmetallionenquelle, Sekundärionenmassenspektrometer, sekundärionenmassenspektrometisches Analyseverfahren sowie deren Verwendungen
US20100294306A1 (en) * 2007-12-04 2010-11-25 Mitsubishi Chemical Corporation Method and solution for cleaning semiconductor device substrate
JP5638769B2 (ja) * 2009-02-04 2014-12-10 Hoya株式会社 反射型マスクブランクの製造方法及び反射型マスクの製造方法
EP2453464A1 (en) * 2009-07-08 2012-05-16 Asahi Glass Company, Limited Euv-lithography reflection-type mask blank
JP4739461B2 (ja) * 2009-10-12 2011-08-03 Ｈｏｙａ株式会社 転写用マスクの製造方法及び半導体デバイスの製造方法
JP4797114B2 (ja) * 2009-10-12 2011-10-19 Ｈｏｙａ株式会社 転写用マスクの製造方法及び半導体デバイスの製造方法
JP2011204712A (ja) * 2010-03-24 2011-10-13 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
US8524421B2 (en) * 2010-03-30 2013-09-03 Hoya Corporation Mask blank, transfer mask, methods of manufacturing the same and method of manufacturing a semiconductor device
US8435704B2 (en) * 2010-03-30 2013-05-07 Hoya Corporation Mask blank, transfer mask, and methods of manufacturing the same
JP4688966B2 (ja) * 2010-07-06 2011-05-25 Ｈｏｙａ株式会社 マスクブランクスの製造方法及び転写マスクの製造方法
KR101913431B1 (ko) * 2011-04-06 2018-10-30 호야 가부시키가이샤 마스크 블랭크의 표면 처리 방법, 및 마스크 블랭크의 제조 방법과 마스크의 제조 방법
JP5939662B2 (ja) * 2011-09-21 2016-06-22 Hoya株式会社 マスクブランクの製造方法
US20150079502A1 (en) * 2012-03-14 2015-03-19 Hoya Corporation Mask blank and method of manufacturing a transfer mask

Also Published As

Publication number Publication date
KR20140141579A (ko) 2014-12-10
WO2013136882A1 (ja) 2013-09-19
US20150111134A1 (en) 2015-04-23
JP2013218302A (ja) 2013-10-24
KR101862166B1 (ko) 2018-05-29
TW201351026A (zh) 2013-12-16
TWI594064B (zh) 2017-08-01

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