JP2013206992A - 基板洗浄装置およびそれを備えた基板処理装置 - Google Patents
基板洗浄装置およびそれを備えた基板処理装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 450
- 238000012545 processing Methods 0.000 title claims abstract description 225
- 238000004140 cleaning Methods 0.000 title claims abstract description 180
- 230000007246 mechanism Effects 0.000 claims description 62
- 239000007788 liquid Substances 0.000 claims description 28
- 238000012546 transfer Methods 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract description 13
- 238000010438 heat treatment Methods 0.000 description 45
- 238000011161 development Methods 0.000 description 42
- 230000002093 peripheral effect Effects 0.000 description 34
- 238000000034 method Methods 0.000 description 28
- 230000008569 process Effects 0.000 description 25
- 238000001816 cooling Methods 0.000 description 20
- 239000013256 coordination polymer Substances 0.000 description 20
- 239000012530 fluid Substances 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 239000007888 film coating Substances 0.000 description 9
- 238000009501 film coating Methods 0.000 description 9
- 230000007723 transport mechanism Effects 0.000 description 8
- 102100030373 HSPB1-associated protein 1 Human genes 0.000 description 7
- 101000843045 Homo sapiens HSPB1-associated protein 1 Proteins 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 6
- 238000005192 partition Methods 0.000 description 6
- 239000003595 mist Substances 0.000 description 5
- 238000012856 packing Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PHKJVUUMSPASRG-UHFFFAOYSA-N 4-[4-chloro-5-(2,6-dimethyl-8-pentan-3-ylimidazo[1,2-b]pyridazin-3-yl)-1,3-thiazol-2-yl]morpholine Chemical compound CC=1N=C2C(C(CC)CC)=CC(C)=NN2C=1C(=C(N=1)Cl)SC=1N1CCOCC1 PHKJVUUMSPASRG-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 102100021752 Corticoliberin Human genes 0.000 description 2
- 101000895481 Homo sapiens Corticoliberin Proteins 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 101100346171 Arabidopsis thaliana MORC3 gene Proteins 0.000 description 1
- 101100346174 Arabidopsis thaliana MORC4 gene Proteins 0.000 description 1
- 101100346177 Arabidopsis thaliana MORC5 gene Proteins 0.000 description 1
- 101100346178 Arabidopsis thaliana MORC6 gene Proteins 0.000 description 1
- 101100346179 Arabidopsis thaliana MORC7 gene Proteins 0.000 description 1
- 101100168604 Candida albicans (strain SC5314 / ATCC MYA-2876) CRH12 gene Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 101100168607 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) UTR2 gene Proteins 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
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- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
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Abstract
【解決手段】筐体900内の上部にULPAフィルタFが配置される。筐体900の外部の空気がダクト820を通してULPAフィルタFに供給される。ULPAフィルタFを通過した清浄な空気が、流路形成部材850、接続部材240、台座220、モータ支持部材200sおよびスピンモータ200の回転軸210を通してスピンプレート520の開口520hに導かれる。スピンチャック600により基板Wが保持されることにより、基板Wの上面がスピンプレート520に対向する。この状態で、スピンモータ200が動作することによりスピンプレート520が回転し、回転する基板Wの下面が洗浄ブラシ630により洗浄される。
【選択図】図5
Description
図1は、本発明の一実施の形態に係る基板処理装置の平面図である。本実施の形態に係る基板処理装置500は、例えばクリーンルーム内に設置される。なお、図1ならびに後述する図2〜図4には、位置関係を明確にするために互いに直交するX方向、Y方向およびZ方向を示す矢印を付している。X方向およびY方向は水平面内で互いに直交し、Z方向は鉛直方向に相当する。
次に、本実施の形態に係る基板処理装置500の動作について図1〜図4を参照しながら説明する。
まず、インデクサブロック9から現像処理ブロック12までの動作について簡単に説明する。
次に、インターフェースブロック15の動作について詳細に説明する。
次に、裏面洗浄処理ユニットBCについて図面を用いて詳細に説明する。図5は、裏面洗浄処理ユニットBCの構成を示す側面図である。裏面洗浄処理ユニットBCは、略直方体形状を有する筐体900を備え、その筐体900の内部に以下の構成要素が設けられる。
図5のスピンプレート520の開口520hに空気を供給するための構成要素の詳細について説明する。図8は、主として図5の回転軸210、台座220、接続部材240、ダクト820、フィルタ収容部材840および流路形成部材850の構造を示す縦断面図である。図9(a)は図8のフィルタ収容部材840および流路形成部材850の側面図であり、図9(b)は図8のフィルタ収容部材840および流路形成部材850をスピンチャック600の位置から見た場合の平面図である。
スピンチャック600による基板Wの保持動作について説明する。図10および図11は、スピンチャック600による基板Wの保持動作を説明するための図である。
図12および図13は、基板Wの裏面洗浄処理について説明するための側面図である。
(7−1)本実施の形態に係る裏面洗浄処理ユニットBCにおいては、ファン810が動作することにより、基板処理装置500の外部の空気がダクト820を通してULPAフィルタFに供給される。ULPAフィルタFを通過した清浄な空気が、流路形成部材850、接続部材240、台座220、モータ支持部材200sおよびスピンモータ200の回転軸210を通してスピンプレート520の開口520hに導かれる。
(8−1)裏面洗浄処理ユニットBCには、モータ支持部材200sの貫通孔200h、スピンモータ200の回転軸210の内部およびプレート支持部材510の内部を通るように、流体供給管が設けられてもよい。また、スピンプレート520の下面に円板状の遮断板が取り付けられてもよい。
以下、請求項の各構成要素と実施の形態の各要素との対応の例について説明するが、本発明は下記の例に限定されない。
10 反射防止膜用処理ブロック
11 レジスト膜用処理ブロック
12 現像処理ブロック
15 インターフェースブロック
16 露光装置
16a 基板搬入部
16b 基板搬出部
30 メインコントローラ
40 キャリア載置台
50 反射防止膜用塗布処理部
60 レジスト膜用塗布処理部
70 現像処理部
100,101 反射防止膜用熱処理部
110,111 レジスト膜用熱処理部
120 現像用熱処理部
121 露光後ベーク用熱処理部
200 スピンモータ
200h,842 貫通孔
200s モータ支持部材
210 回転軸
220 台座
240 接続部材
241 空気流入口
242 空気流出口
250 パッキン
290 モータ固定部
420 流体供給管
430 ガイド管
430f フランジ
500 基板処理装置
510 プレート支持部材
510F フランジ
510h 内周面
511 ねじ受け部
512 パッド固定片
520 スピンプレート
520h,821,843 開口
600 スピンチャック
614a,614b マグネットプレート
617a,617b マグネット昇降機構
618 ガード
618a ガード昇降機構
620 基板受け渡し機構
621 昇降回転駆動部
622 回転軸
623 アーム
624 保持ピン
630 洗浄ブラシ
631 ブラシ保持部材
632 ブラシ移動機構
633 洗浄ノズル
635 支持軸
700 基板保持機構
710 保持ピン
720 支持部
730 軸部
790 マグネット
810 ファン
820 ダクト
840 フィルタ収容部材
840a〜840d 側壁
841 枠部
850 流路形成部材
851 流路制限部
852 流路部
853 空気流出口
900 筐体
900b 底面
900t 天井
990 排気装置
BARC,RES 塗布ユニット
BC 裏面洗浄処理ユニット
C キャリア
CP 冷却ユニット
CR1 第1のセンターロボット
CR2 第2のセンターロボット
CR3 第3のセンターロボット
CR4 第4のセンターロボット
CRH1〜CRH8 ハンド
DEV 現像処理ユニット
EEW エッジ露光部
F ULPAフィルタ
H1 ハンド
HP 加熱ユニット
IFR インターフェース用搬送機構
IR インデクサロボット
IRH ハンド
P−CP 載置兼冷却ユニット
PASS1〜PASS9 基板載置部
RBF 戻りバッファ部
SBF 送りバッファ部
W 基板
Claims (8)
- 基板の下面を洗浄する基板洗浄装置であって、
鉛直方向に沿う回転軸線の周りで回転可能に設けられかつ中央部に開口を有する回転部材と、
前記回転部材の上側に設けられ、前記回転部材を回転させる回転駆動装置と、
前記回転部材の下側に設けられ、基板の上面が前記回転部材に対向する状態で基板を保持する保持部材と、
前記保持部材により保持される基板と前記回転部材との間に、前記回転部材の開口を通して空気を供給する空気供給機構と、
前記保持部材により保持される基板の下面を洗浄する洗浄機構とを備え、
前記空気供給機構は、
フィルタと、
前記フィルタに空気を供給する空気供給部と、
前記フィルタを通過した空気を前記回転部材の開口に導くように構成される空気経路とを含む、基板洗浄装置。 - 前記空気供給機構の少なくとも一部、前記回転部材、前記回転駆動装置、前記保持部材および前記洗浄機構を収容する筐体をさらに備え、
前記フィルタは、前記空気供給部により供給される空気を上方から下方に通過させるように前記筐体内の上部に配置され、
前記空気経路は、前記フィルタを通過した一部の空気を前記回転部材の開口に導くように構成され、
前記フィルタを通過した残りの空気は、前記筐体内に供給される、請求項1記載の基板洗浄装置。 - 前記空気供給部は、前記フィルタの上側に設けられ、前記筐体の外部から供給される空気を前記フィルタに導くダクトを含む、請求項2記載の基板洗浄装置。
- 前記空気経路は、前記フィルタから前記回転部材の前記開口へ漸次減少する断面積を有するように構成された、請求項1〜3のいずれか一項に記載の基板洗浄装置。
- 前記回転駆動装置は、前記空気経路の一部を構成しかつ鉛直方向に延びる中空の回転軸を有し、
前記回転部材は、前記回転軸の内部空間が前記開口を通して前記回転部材の下方の空間に連通するように、前記回転軸の下端部に取り付けられた、請求項1〜4のいずれか一項に記載の基板洗浄装置。 - 前記洗浄機構は、
前記保持部材により保持される基板の下面を洗浄するための洗浄具と、
前記保持部材により保持される基板の下面に洗浄液を供給する洗浄液供給部とを備える、請求項1〜5のいずれか一項に記載の基板洗浄装置。 - 露光装置に隣接するように配置され、基板に処理を行う基板処理装置であって、
基板に処理を行うための処理部と、
前記処理部と前記露光装置との間で基板の受け渡しを行うための受け渡し部とを備え、
前記処理部および前記受け渡し部の少なくとも一方は、前記露光装置による露光処理前の基板の下面を洗浄する請求項1〜6のいずれか一項に記載の基板洗浄装置とを含む、基板処理装置。 - 前記処理部は、基板の上面に感光性材料からなる感光性膜を形成するように構成された感光性膜形成ユニットを含み、
前記基板洗浄装置は、前記感光成膜形成ユニットによる感光性膜の形成後かつ前記露光装置による露光処理前または露光処理後の基板の下面を洗浄するように構成された、請求項7記載の基板処理装置。
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TW101150669A TWI525675B (zh) | 2012-03-27 | 2012-12-27 | 基板清潔裝置及具備其之基板處理裝置 |
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KR101966245B1 (ko) | 2013-12-23 | 2019-04-08 | 한국화학연구원 | 무/유기 하이브리드 페로브스카이트 화합물 전구물질 |
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