JP2013206484A5 - - Google Patents
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- JP2013206484A5 JP2013206484A5 JP2012071700A JP2012071700A JP2013206484A5 JP 2013206484 A5 JP2013206484 A5 JP 2013206484A5 JP 2012071700 A JP2012071700 A JP 2012071700A JP 2012071700 A JP2012071700 A JP 2012071700A JP 2013206484 A5 JP2013206484 A5 JP 2013206484A5
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- memory device
- match
- match line
- associative memory
- Prior art date
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- 230000004913 activation Effects 0.000 claims 3
- 239000011159 matrix material Substances 0.000 claims 3
- 239000003990 capacitor Substances 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012071700A JP5893465B2 (ja) | 2012-03-27 | 2012-03-27 | 連想記憶装置 |
| US13/839,191 US8804392B2 (en) | 2012-03-27 | 2013-03-15 | Content addressable memory chip |
| CN201310102743.5A CN103366808B (zh) | 2012-03-27 | 2013-03-27 | 内容可寻址存储器芯片 |
| CN201611160417.XA CN107093455B (zh) | 2012-03-27 | 2013-03-27 | 内容可寻址存储器芯片 |
| US14/320,850 US8947901B2 (en) | 2012-03-27 | 2014-07-01 | Content addressable memory chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012071700A JP5893465B2 (ja) | 2012-03-27 | 2012-03-27 | 連想記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013206484A JP2013206484A (ja) | 2013-10-07 |
| JP2013206484A5 true JP2013206484A5 (enExample) | 2014-10-02 |
| JP5893465B2 JP5893465B2 (ja) | 2016-03-23 |
Family
ID=49234824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012071700A Active JP5893465B2 (ja) | 2012-03-27 | 2012-03-27 | 連想記憶装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US8804392B2 (enExample) |
| JP (1) | JP5893465B2 (enExample) |
| CN (2) | CN107093455B (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103778957B (zh) * | 2014-01-30 | 2017-07-21 | 大连理工大学 | 一种区间匹配cam单元电路及其组成的rcam存储器 |
| JP6533129B2 (ja) * | 2015-08-28 | 2019-06-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| TWI681388B (zh) * | 2016-04-21 | 2020-01-01 | 聯華電子股份有限公司 | 半導體記憶體裝置及操作半導體記憶體裝置的方法 |
| KR20180028020A (ko) * | 2016-09-07 | 2018-03-15 | 르네사스 일렉트로닉스 가부시키가이샤 | 반도체 장치 |
| JP6840621B2 (ja) * | 2017-05-24 | 2021-03-10 | ルネサスエレクトロニクス株式会社 | 内容参照メモリ |
| JP6840625B2 (ja) * | 2017-05-30 | 2021-03-10 | ルネサスエレクトロニクス株式会社 | 内容参照メモリ |
| JP2018206452A (ja) * | 2017-05-30 | 2018-12-27 | ルネサスエレクトロニクス株式会社 | 内容参照メモリ及び半導体装置 |
| CN107967925B (zh) * | 2017-12-13 | 2020-07-24 | 大连理工大学 | 一种工艺变化自适应的低功耗cam匹配线敏感装置 |
| CN110729013B (zh) * | 2018-07-16 | 2021-10-29 | 蓝枪半导体有限责任公司 | 用于三态内容寻址存储器的控制电路 |
| US11158364B2 (en) | 2019-05-31 | 2021-10-26 | Micron Technology, Inc. | Apparatuses and methods for tracking victim rows |
| US11158373B2 (en) | 2019-06-11 | 2021-10-26 | Micron Technology, Inc. | Apparatuses, systems, and methods for determining extremum numerical values |
| US10964378B2 (en) * | 2019-08-22 | 2021-03-30 | Micron Technology, Inc. | Apparatus and method including analog accumulator for determining row access rate and target row address used for refresh operation |
| CN110993005B (zh) * | 2019-12-11 | 2021-03-26 | 海光信息技术股份有限公司 | 电路结构、芯片、训练方法及训练装置 |
| JP7475080B2 (ja) | 2020-04-01 | 2024-04-26 | 義憲 岡島 | 曖昧検索回路 |
| CN111933198B (zh) * | 2020-09-14 | 2021-02-05 | 新华三半导体技术有限公司 | 内容寻址存储器cam的匹配线检测电路 |
| US11462291B2 (en) | 2020-11-23 | 2022-10-04 | Micron Technology, Inc. | Apparatuses and methods for tracking word line accesses |
| US11482275B2 (en) | 2021-01-20 | 2022-10-25 | Micron Technology, Inc. | Apparatuses and methods for dynamically allocated aggressor detection |
| US12165687B2 (en) | 2021-12-29 | 2024-12-10 | Micron Technology, Inc. | Apparatuses and methods for row hammer counter mat |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60220959A (ja) * | 1984-04-17 | 1985-11-05 | Matsushita Electric Ind Co Ltd | 電子回路 |
| JPS62109430A (ja) * | 1985-11-07 | 1987-05-20 | Nec Corp | 半導体回路 |
| JPH04343519A (ja) * | 1991-05-20 | 1992-11-30 | Nec Corp | 入力回路 |
| JP3560166B2 (ja) | 1993-06-22 | 2004-09-02 | 川崎マイクロエレクトロニクス株式会社 | 半導体記憶装置 |
| JPH07282587A (ja) | 1994-04-06 | 1995-10-27 | Hitachi Ltd | 半導体集積回路 |
| US6188629B1 (en) * | 1999-11-05 | 2001-02-13 | Cecil H. Kaplinsky | Low power, static content addressable memory |
| US6539466B1 (en) * | 2000-02-21 | 2003-03-25 | Hewlett-Packard Company | System and method for TLB buddy entry self-timing |
| US6512684B2 (en) * | 2001-06-11 | 2003-01-28 | International Business Machines Corporation | Content addressable memory having cascaded sub-entry architecture |
| EP1271548B1 (en) * | 2001-06-22 | 2008-05-14 | STMicroelectronics Limited | Associative memory with AND gate match signal combining circuitry |
| US6760242B1 (en) * | 2002-04-10 | 2004-07-06 | Integrated Device Technology, Inc. | Content addressable memory (CAM) devices having speed adjustable match line signal repeaters therein |
| US7009861B2 (en) * | 2003-02-20 | 2006-03-07 | Stmicroelectronics Pvt. Ltd. | Content addressable memory cell architecture |
| JP3906178B2 (ja) * | 2003-04-18 | 2007-04-18 | 株式会社東芝 | 強誘電体メモリ |
| JP5057490B2 (ja) * | 2004-01-13 | 2012-10-24 | 株式会社日立製作所 | 半導体記憶装置 |
| JP4541077B2 (ja) * | 2004-01-13 | 2010-09-08 | 株式会社日立超エル・エス・アイ・システムズ | 半導体記憶装置 |
| KR100532508B1 (ko) * | 2004-03-12 | 2005-11-30 | 삼성전자주식회사 | 고속 동작이 가능한 캠 |
| JP2006059479A (ja) * | 2004-08-23 | 2006-03-02 | Renesas Technology Corp | 連想記憶装置 |
| US7317628B1 (en) * | 2005-10-24 | 2008-01-08 | Netlogic Microsystems, Inc. | Memory device and sense amplifier circuit with faster sensing speed and improved insensitivities to fabrication process variations |
| US20070247885A1 (en) * | 2006-04-25 | 2007-10-25 | Renesas Technology Corp. | Content addressable memory |
| KR100780623B1 (ko) * | 2006-06-30 | 2007-11-29 | 주식회사 하이닉스반도체 | 반도체 소자의 내부전압 생성장치 |
| JP2009026350A (ja) | 2007-07-17 | 2009-02-05 | Renesas Technology Corp | 半導体装置 |
| US7911818B2 (en) * | 2009-03-16 | 2011-03-22 | Netlogic Microsystems, Inc. | Content addressable memory having bidirectional lines that support passing read/write data and search data |
| JP5477621B2 (ja) * | 2009-08-03 | 2014-04-23 | ルネサスエレクトロニクス株式会社 | 連想メモリ |
| JP2011181147A (ja) * | 2010-03-02 | 2011-09-15 | Renesas Electronics Corp | 連想記憶装置 |
-
2012
- 2012-03-27 JP JP2012071700A patent/JP5893465B2/ja active Active
-
2013
- 2013-03-15 US US13/839,191 patent/US8804392B2/en active Active
- 2013-03-27 CN CN201611160417.XA patent/CN107093455B/zh active Active
- 2013-03-27 CN CN201310102743.5A patent/CN103366808B/zh active Active
-
2014
- 2014-07-01 US US14/320,850 patent/US8947901B2/en active Active
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