CN107093455B - 内容可寻址存储器芯片 - Google Patents

内容可寻址存储器芯片 Download PDF

Info

Publication number
CN107093455B
CN107093455B CN201611160417.XA CN201611160417A CN107093455B CN 107093455 B CN107093455 B CN 107093455B CN 201611160417 A CN201611160417 A CN 201611160417A CN 107093455 B CN107093455 B CN 107093455B
Authority
CN
China
Prior art keywords
match
circuit
content addressable
addressable memory
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201611160417.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN107093455A (zh
Inventor
岸田正信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of CN107093455A publication Critical patent/CN107093455A/zh
Application granted granted Critical
Publication of CN107093455B publication Critical patent/CN107093455B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
CN201611160417.XA 2012-03-27 2013-03-27 内容可寻址存储器芯片 Active CN107093455B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012-071700 2012-03-27
JP2012071700A JP5893465B2 (ja) 2012-03-27 2012-03-27 連想記憶装置
CN201310102743.5A CN103366808B (zh) 2012-03-27 2013-03-27 内容可寻址存储器芯片

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201310102743.5A Division CN103366808B (zh) 2012-03-27 2013-03-27 内容可寻址存储器芯片

Publications (2)

Publication Number Publication Date
CN107093455A CN107093455A (zh) 2017-08-25
CN107093455B true CN107093455B (zh) 2021-01-15

Family

ID=49234824

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201611160417.XA Active CN107093455B (zh) 2012-03-27 2013-03-27 内容可寻址存储器芯片
CN201310102743.5A Active CN103366808B (zh) 2012-03-27 2013-03-27 内容可寻址存储器芯片

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201310102743.5A Active CN103366808B (zh) 2012-03-27 2013-03-27 内容可寻址存储器芯片

Country Status (3)

Country Link
US (2) US8804392B2 (enExample)
JP (1) JP5893465B2 (enExample)
CN (2) CN107093455B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103778957B (zh) * 2014-01-30 2017-07-21 大连理工大学 一种区间匹配cam单元电路及其组成的rcam存储器
JP6533129B2 (ja) * 2015-08-28 2019-06-19 ルネサスエレクトロニクス株式会社 半導体装置
TWI681388B (zh) * 2016-04-21 2020-01-01 聯華電子股份有限公司 半導體記憶體裝置及操作半導體記憶體裝置的方法
KR20180028020A (ko) * 2016-09-07 2018-03-15 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치
JP6840621B2 (ja) * 2017-05-24 2021-03-10 ルネサスエレクトロニクス株式会社 内容参照メモリ
JP6840625B2 (ja) * 2017-05-30 2021-03-10 ルネサスエレクトロニクス株式会社 内容参照メモリ
JP2018206452A (ja) * 2017-05-30 2018-12-27 ルネサスエレクトロニクス株式会社 内容参照メモリ及び半導体装置
CN107967925B (zh) * 2017-12-13 2020-07-24 大连理工大学 一种工艺变化自适应的低功耗cam匹配线敏感装置
CN110729013B (zh) * 2018-07-16 2021-10-29 蓝枪半导体有限责任公司 用于三态内容寻址存储器的控制电路
US11158364B2 (en) 2019-05-31 2021-10-26 Micron Technology, Inc. Apparatuses and methods for tracking victim rows
US11158373B2 (en) 2019-06-11 2021-10-26 Micron Technology, Inc. Apparatuses, systems, and methods for determining extremum numerical values
US10964378B2 (en) * 2019-08-22 2021-03-30 Micron Technology, Inc. Apparatus and method including analog accumulator for determining row access rate and target row address used for refresh operation
CN110993005B (zh) * 2019-12-11 2021-03-26 海光信息技术股份有限公司 电路结构、芯片、训练方法及训练装置
JP7475080B2 (ja) 2020-04-01 2024-04-26 義憲 岡島 曖昧検索回路
CN111933198B (zh) * 2020-09-14 2021-02-05 新华三半导体技术有限公司 内容寻址存储器cam的匹配线检测电路
US11462291B2 (en) 2020-11-23 2022-10-04 Micron Technology, Inc. Apparatuses and methods for tracking word line accesses
US11482275B2 (en) 2021-01-20 2022-10-25 Micron Technology, Inc. Apparatuses and methods for dynamically allocated aggressor detection
US12165687B2 (en) 2021-12-29 2024-12-10 Micron Technology, Inc. Apparatuses and methods for row hammer counter mat

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6188629B1 (en) * 1999-11-05 2001-02-13 Cecil H. Kaplinsky Low power, static content addressable memory
US20020196670A1 (en) * 2001-06-22 2002-12-26 William Barnes Associative memory
US20050152167A1 (en) * 2004-01-13 2005-07-14 Hitachi, Ltd. Semiconductor memory device
US20060039173A1 (en) * 2004-08-23 2006-02-23 Renesas Technology Corp. Content addressable memory
CN101989452A (zh) * 2009-08-03 2011-03-23 瑞萨电子株式会社 内容可寻址存储器
US20110216569A1 (en) * 2010-03-02 2011-09-08 Renesas Electronic Corporation Content addressable memory device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60220959A (ja) * 1984-04-17 1985-11-05 Matsushita Electric Ind Co Ltd 電子回路
JPS62109430A (ja) * 1985-11-07 1987-05-20 Nec Corp 半導体回路
JPH04343519A (ja) * 1991-05-20 1992-11-30 Nec Corp 入力回路
JP3560166B2 (ja) 1993-06-22 2004-09-02 川崎マイクロエレクトロニクス株式会社 半導体記憶装置
JPH07282587A (ja) 1994-04-06 1995-10-27 Hitachi Ltd 半導体集積回路
US6539466B1 (en) * 2000-02-21 2003-03-25 Hewlett-Packard Company System and method for TLB buddy entry self-timing
US6512684B2 (en) * 2001-06-11 2003-01-28 International Business Machines Corporation Content addressable memory having cascaded sub-entry architecture
US6760242B1 (en) * 2002-04-10 2004-07-06 Integrated Device Technology, Inc. Content addressable memory (CAM) devices having speed adjustable match line signal repeaters therein
US7009861B2 (en) * 2003-02-20 2006-03-07 Stmicroelectronics Pvt. Ltd. Content addressable memory cell architecture
JP3906178B2 (ja) * 2003-04-18 2007-04-18 株式会社東芝 強誘電体メモリ
JP5057490B2 (ja) * 2004-01-13 2012-10-24 株式会社日立製作所 半導体記憶装置
KR100532508B1 (ko) * 2004-03-12 2005-11-30 삼성전자주식회사 고속 동작이 가능한 캠
US7317628B1 (en) * 2005-10-24 2008-01-08 Netlogic Microsystems, Inc. Memory device and sense amplifier circuit with faster sensing speed and improved insensitivities to fabrication process variations
US20070247885A1 (en) * 2006-04-25 2007-10-25 Renesas Technology Corp. Content addressable memory
KR100780623B1 (ko) * 2006-06-30 2007-11-29 주식회사 하이닉스반도체 반도체 소자의 내부전압 생성장치
JP2009026350A (ja) 2007-07-17 2009-02-05 Renesas Technology Corp 半導体装置
US7911818B2 (en) * 2009-03-16 2011-03-22 Netlogic Microsystems, Inc. Content addressable memory having bidirectional lines that support passing read/write data and search data

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6188629B1 (en) * 1999-11-05 2001-02-13 Cecil H. Kaplinsky Low power, static content addressable memory
US20020196670A1 (en) * 2001-06-22 2002-12-26 William Barnes Associative memory
US20050152167A1 (en) * 2004-01-13 2005-07-14 Hitachi, Ltd. Semiconductor memory device
US20060039173A1 (en) * 2004-08-23 2006-02-23 Renesas Technology Corp. Content addressable memory
CN101989452A (zh) * 2009-08-03 2011-03-23 瑞萨电子株式会社 内容可寻址存储器
US20110216569A1 (en) * 2010-03-02 2011-09-08 Renesas Electronic Corporation Content addressable memory device

Also Published As

Publication number Publication date
CN103366808B (zh) 2017-07-14
US8804392B2 (en) 2014-08-12
CN103366808A (zh) 2013-10-23
US20140313808A1 (en) 2014-10-23
US20130258739A1 (en) 2013-10-03
CN107093455A (zh) 2017-08-25
JP5893465B2 (ja) 2016-03-23
US8947901B2 (en) 2015-02-03
JP2013206484A (ja) 2013-10-07

Similar Documents

Publication Publication Date Title
CN107093455B (zh) 内容可寻址存储器芯片
US9799396B2 (en) Semiconductor device
US6556471B2 (en) VDD modulated SRAM for highly scaled, high performance cache
US6804153B2 (en) Semiconductor memory device internally generating internal data read timing
US8659963B2 (en) Enhanced power savings for memory arrays
JP5308320B2 (ja) Ｐ型評価を有するレジスタ・ファイル回路
Tsai et al. Automatic charge balancing content addressable memory with self-control mechanism
Mahendra et al. Low match-line voltage swing technique for content addressable memory
US11810619B2 (en) Semiconductor device having a contents addressable memory
CN112712843B (zh) 存储器和包括存储器的半导体设备
JP2588936B2 (ja) 半導体記憶装置
KR101149816B1 (ko) 캐쉬 메모리의 캐쉬 히트 로직
US8320201B2 (en) Method of reading memory cell
WO2010050283A1 (ja) メモリセル及びそれを用いた連想記憶装置
TWI523010B (zh) 記憶體電路及其操作方法
US10839865B1 (en) Self-timed memory with adaptive voltage scaling
US8233331B2 (en) Single clock dynamic compare circuit
US7136317B1 (en) DRAM with self-resetting data path for reduced power consumption
US7142465B2 (en) Semiconductor memory
US20060203583A1 (en) Semiconductor memory and data read method of the same
KR101337240B1 (ko) 의사 정적 동적 비트 라인 칩 및 방법
US20140071783A1 (en) Memory device with clock generation based on segmented address change detection

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant