JP5893465B2 - 連想記憶装置 - Google Patents

連想記憶装置 Download PDF

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Publication number
JP5893465B2
JP5893465B2 JP2012071700A JP2012071700A JP5893465B2 JP 5893465 B2 JP5893465 B2 JP 5893465B2 JP 2012071700 A JP2012071700 A JP 2012071700A JP 2012071700 A JP2012071700 A JP 2012071700A JP 5893465 B2 JP5893465 B2 JP 5893465B2
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circuit
match
memory device
output
threshold value
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Japanese (ja)
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JP2013206484A5 (enExample
JP2013206484A (ja
Inventor
正信 岸田
正信 岸田
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2012071700A priority Critical patent/JP5893465B2/ja
Priority to US13/839,191 priority patent/US8804392B2/en
Priority to CN201310102743.5A priority patent/CN103366808B/zh
Priority to CN201611160417.XA priority patent/CN107093455B/zh
Publication of JP2013206484A publication Critical patent/JP2013206484A/ja
Priority to US14/320,850 priority patent/US8947901B2/en
Publication of JP2013206484A5 publication Critical patent/JP2013206484A5/ja
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Publication of JP5893465B2 publication Critical patent/JP5893465B2/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements

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  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2012071700A 2012-03-27 2012-03-27 連想記憶装置 Active JP5893465B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012071700A JP5893465B2 (ja) 2012-03-27 2012-03-27 連想記憶装置
US13/839,191 US8804392B2 (en) 2012-03-27 2013-03-15 Content addressable memory chip
CN201310102743.5A CN103366808B (zh) 2012-03-27 2013-03-27 内容可寻址存储器芯片
CN201611160417.XA CN107093455B (zh) 2012-03-27 2013-03-27 内容可寻址存储器芯片
US14/320,850 US8947901B2 (en) 2012-03-27 2014-07-01 Content addressable memory chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012071700A JP5893465B2 (ja) 2012-03-27 2012-03-27 連想記憶装置

Publications (3)

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JP2013206484A JP2013206484A (ja) 2013-10-07
JP2013206484A5 JP2013206484A5 (enExample) 2014-10-02
JP5893465B2 true JP5893465B2 (ja) 2016-03-23

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JP2012071700A Active JP5893465B2 (ja) 2012-03-27 2012-03-27 連想記憶装置

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US (2) US8804392B2 (enExample)
JP (1) JP5893465B2 (enExample)
CN (2) CN107093455B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11942152B2 (en) 2020-04-01 2024-03-26 Yoshinori Okajima Fuzzy string search circuit

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CN103778957B (zh) * 2014-01-30 2017-07-21 大连理工大学 一种区间匹配cam单元电路及其组成的rcam存储器
JP6533129B2 (ja) * 2015-08-28 2019-06-19 ルネサスエレクトロニクス株式会社 半導体装置
TWI681388B (zh) * 2016-04-21 2020-01-01 聯華電子股份有限公司 半導體記憶體裝置及操作半導體記憶體裝置的方法
KR20180028020A (ko) * 2016-09-07 2018-03-15 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치
JP6840621B2 (ja) * 2017-05-24 2021-03-10 ルネサスエレクトロニクス株式会社 内容参照メモリ
JP6840625B2 (ja) * 2017-05-30 2021-03-10 ルネサスエレクトロニクス株式会社 内容参照メモリ
JP2018206452A (ja) * 2017-05-30 2018-12-27 ルネサスエレクトロニクス株式会社 内容参照メモリ及び半導体装置
CN107967925B (zh) * 2017-12-13 2020-07-24 大连理工大学 一种工艺变化自适应的低功耗cam匹配线敏感装置
CN110729013B (zh) * 2018-07-16 2021-10-29 蓝枪半导体有限责任公司 用于三态内容寻址存储器的控制电路
US11158364B2 (en) 2019-05-31 2021-10-26 Micron Technology, Inc. Apparatuses and methods for tracking victim rows
US11158373B2 (en) 2019-06-11 2021-10-26 Micron Technology, Inc. Apparatuses, systems, and methods for determining extremum numerical values
US10964378B2 (en) * 2019-08-22 2021-03-30 Micron Technology, Inc. Apparatus and method including analog accumulator for determining row access rate and target row address used for refresh operation
CN110993005B (zh) * 2019-12-11 2021-03-26 海光信息技术股份有限公司 电路结构、芯片、训练方法及训练装置
CN111933198B (zh) * 2020-09-14 2021-02-05 新华三半导体技术有限公司 内容寻址存储器cam的匹配线检测电路
US11462291B2 (en) 2020-11-23 2022-10-04 Micron Technology, Inc. Apparatuses and methods for tracking word line accesses
US11482275B2 (en) 2021-01-20 2022-10-25 Micron Technology, Inc. Apparatuses and methods for dynamically allocated aggressor detection
US12165687B2 (en) 2021-12-29 2024-12-10 Micron Technology, Inc. Apparatuses and methods for row hammer counter mat

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JPS60220959A (ja) * 1984-04-17 1985-11-05 Matsushita Electric Ind Co Ltd 電子回路
JPS62109430A (ja) * 1985-11-07 1987-05-20 Nec Corp 半導体回路
JPH04343519A (ja) * 1991-05-20 1992-11-30 Nec Corp 入力回路
JP3560166B2 (ja) 1993-06-22 2004-09-02 川崎マイクロエレクトロニクス株式会社 半導体記憶装置
JPH07282587A (ja) 1994-04-06 1995-10-27 Hitachi Ltd 半導体集積回路
US6188629B1 (en) * 1999-11-05 2001-02-13 Cecil H. Kaplinsky Low power, static content addressable memory
US6539466B1 (en) * 2000-02-21 2003-03-25 Hewlett-Packard Company System and method for TLB buddy entry self-timing
US6512684B2 (en) * 2001-06-11 2003-01-28 International Business Machines Corporation Content addressable memory having cascaded sub-entry architecture
EP1271548B1 (en) * 2001-06-22 2008-05-14 STMicroelectronics Limited Associative memory with AND gate match signal combining circuitry
US6760242B1 (en) * 2002-04-10 2004-07-06 Integrated Device Technology, Inc. Content addressable memory (CAM) devices having speed adjustable match line signal repeaters therein
US7009861B2 (en) * 2003-02-20 2006-03-07 Stmicroelectronics Pvt. Ltd. Content addressable memory cell architecture
JP3906178B2 (ja) * 2003-04-18 2007-04-18 株式会社東芝 強誘電体メモリ
JP5057490B2 (ja) * 2004-01-13 2012-10-24 株式会社日立製作所 半導体記憶装置
JP4541077B2 (ja) * 2004-01-13 2010-09-08 株式会社日立超エル・エス・アイ・システムズ 半導体記憶装置
KR100532508B1 (ko) * 2004-03-12 2005-11-30 삼성전자주식회사 고속 동작이 가능한 캠
JP2006059479A (ja) * 2004-08-23 2006-03-02 Renesas Technology Corp 連想記憶装置
US7317628B1 (en) * 2005-10-24 2008-01-08 Netlogic Microsystems, Inc. Memory device and sense amplifier circuit with faster sensing speed and improved insensitivities to fabrication process variations
US20070247885A1 (en) * 2006-04-25 2007-10-25 Renesas Technology Corp. Content addressable memory
KR100780623B1 (ko) * 2006-06-30 2007-11-29 주식회사 하이닉스반도체 반도체 소자의 내부전압 생성장치
JP2009026350A (ja) 2007-07-17 2009-02-05 Renesas Technology Corp 半導体装置
US7911818B2 (en) * 2009-03-16 2011-03-22 Netlogic Microsystems, Inc. Content addressable memory having bidirectional lines that support passing read/write data and search data
JP5477621B2 (ja) * 2009-08-03 2014-04-23 ルネサスエレクトロニクス株式会社 連想メモリ
JP2011181147A (ja) * 2010-03-02 2011-09-15 Renesas Electronics Corp 連想記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11942152B2 (en) 2020-04-01 2024-03-26 Yoshinori Okajima Fuzzy string search circuit

Also Published As

Publication number Publication date
CN103366808B (zh) 2017-07-14
US8804392B2 (en) 2014-08-12
CN103366808A (zh) 2013-10-23
US20140313808A1 (en) 2014-10-23
US20130258739A1 (en) 2013-10-03
CN107093455A (zh) 2017-08-25
US8947901B2 (en) 2015-02-03
JP2013206484A (ja) 2013-10-07
CN107093455B (zh) 2021-01-15

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