JP2013197531A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP2013197531A
JP2013197531A JP2012066194A JP2012066194A JP2013197531A JP 2013197531 A JP2013197531 A JP 2013197531A JP 2012066194 A JP2012066194 A JP 2012066194A JP 2012066194 A JP2012066194 A JP 2012066194A JP 2013197531 A JP2013197531 A JP 2013197531A
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JP
Japan
Prior art keywords
resin
semiconductor chip
semiconductor device
protective resin
bonding wire
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Pending
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JP2012066194A
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English (en)
Japanese (ja)
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JP2013197531A5 (https=
Inventor
Takayuki Mihara
敬之 三原
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Sharp Corp
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Sharp Corp
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Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2012066194A priority Critical patent/JP2013197531A/ja
Publication of JP2013197531A publication Critical patent/JP2013197531A/ja
Publication of JP2013197531A5 publication Critical patent/JP2013197531A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/015Manufacture or treatment of bond wires
    • H10W72/01515Forming coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07531Techniques
    • H10W72/07532Compression bonding, e.g. thermocompression bonding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
JP2012066194A 2012-03-22 2012-03-22 半導体装置およびその製造方法 Pending JP2013197531A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012066194A JP2013197531A (ja) 2012-03-22 2012-03-22 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012066194A JP2013197531A (ja) 2012-03-22 2012-03-22 半導体装置およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016165026A Division JP2016195292A (ja) 2016-08-25 2016-08-25 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2013197531A true JP2013197531A (ja) 2013-09-30
JP2013197531A5 JP2013197531A5 (https=) 2014-08-28

Family

ID=49396066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012066194A Pending JP2013197531A (ja) 2012-03-22 2012-03-22 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP2013197531A (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140145403A (ko) * 2013-06-13 2014-12-23 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템
EP3163610A1 (en) * 2015-11-02 2017-05-03 MediaTek Inc. Semiconductor package with coated bonding wires
CN107403782A (zh) * 2016-05-20 2017-11-28 英飞凌科技股份有限公司 芯片封装体、形成芯片封装体的方法和形成电接触结构的方法
FR3058260A1 (fr) * 2016-11-03 2018-05-04 Stmicroelectronics (Grenoble 2) Sas Procede de realisation d'une connexion electrique entre une puce electronique et une plaque de support et dispositif electronique
JP2019009171A (ja) * 2017-06-21 2019-01-17 スタンレー電気株式会社 半導体装置
US10224306B2 (en) 2016-11-03 2019-03-05 Stmicroelectronics (Grenoble 2) Sas Method for forming an electrical connection between an electronic chip and a carrier substrate and electronic device
US10847488B2 (en) 2015-11-02 2020-11-24 Mediatek Inc. Semiconductor package having multi-tier bonding wires and components directly mounted on the multi-tier bonding wires
CN112292766A (zh) * 2018-06-04 2021-01-29 雷莱昂等离子有限责任公司 具有电陶瓷部件的装置

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61111569A (ja) * 1984-11-06 1986-05-29 Shin Etsu Chem Co Ltd 樹脂封止半導体装置
JPS61268464A (ja) * 1985-05-23 1986-11-27 Kyocera Corp サ−マルプリントヘツド
JPS6224650A (ja) * 1985-07-24 1987-02-02 Hitachi Vlsi Eng Corp 半導体装置
JPS6297360A (ja) * 1985-10-24 1987-05-06 Mitsubishi Metal Corp 半導体装置のボンデイングワイヤ用表面被覆高純度銅極細線
JPH0582678A (ja) * 1991-09-24 1993-04-02 Sanyo Electric Co Ltd 混成集積回路
JP2001226565A (ja) * 2000-12-25 2001-08-21 Nitto Denko Corp 半導体装置
JP2003092379A (ja) * 2001-09-18 2003-03-28 Hitachi Ltd 半導体装置
JP2003261576A (ja) * 2002-03-08 2003-09-19 Shin Etsu Chem Co Ltd 有機ケイ素化合物の精製方法及び硬化性シリコーン組成物
JP2004064033A (ja) * 2001-10-23 2004-02-26 Sumitomo Electric Wintec Inc ボンディングワイヤー
JP2006241411A (ja) * 2005-03-07 2006-09-14 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物およびその製法ならびにそれを用いた半導体装置
JP2009263601A (ja) * 2008-04-30 2009-11-12 Hitachi Chem Co Ltd 封止用エポキシ樹脂成形材料及び電子部品装置
JP2010157695A (ja) * 2008-12-29 2010-07-15 Jin Imu Myun チップパッケージ化における保護薄膜コーティング
WO2010147187A1 (ja) * 2009-06-18 2010-12-23 ローム株式会社 半導体装置
WO2011070739A1 (ja) * 2009-12-07 2011-06-16 住友ベークライト株式会社 半導体封止用エポキシ樹脂組成物、その硬化体及び半導体装置

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61111569A (ja) * 1984-11-06 1986-05-29 Shin Etsu Chem Co Ltd 樹脂封止半導体装置
JPS61268464A (ja) * 1985-05-23 1986-11-27 Kyocera Corp サ−マルプリントヘツド
JPS6224650A (ja) * 1985-07-24 1987-02-02 Hitachi Vlsi Eng Corp 半導体装置
JPS6297360A (ja) * 1985-10-24 1987-05-06 Mitsubishi Metal Corp 半導体装置のボンデイングワイヤ用表面被覆高純度銅極細線
JPH0582678A (ja) * 1991-09-24 1993-04-02 Sanyo Electric Co Ltd 混成集積回路
JP2001226565A (ja) * 2000-12-25 2001-08-21 Nitto Denko Corp 半導体装置
JP2003092379A (ja) * 2001-09-18 2003-03-28 Hitachi Ltd 半導体装置
JP2004064033A (ja) * 2001-10-23 2004-02-26 Sumitomo Electric Wintec Inc ボンディングワイヤー
JP2003261576A (ja) * 2002-03-08 2003-09-19 Shin Etsu Chem Co Ltd 有機ケイ素化合物の精製方法及び硬化性シリコーン組成物
JP2006241411A (ja) * 2005-03-07 2006-09-14 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物およびその製法ならびにそれを用いた半導体装置
JP2009263601A (ja) * 2008-04-30 2009-11-12 Hitachi Chem Co Ltd 封止用エポキシ樹脂成形材料及び電子部品装置
JP2010157695A (ja) * 2008-12-29 2010-07-15 Jin Imu Myun チップパッケージ化における保護薄膜コーティング
WO2010147187A1 (ja) * 2009-06-18 2010-12-23 ローム株式会社 半導体装置
WO2011070739A1 (ja) * 2009-12-07 2011-06-16 住友ベークライト株式会社 半導体封止用エポキシ樹脂組成物、その硬化体及び半導体装置

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140145403A (ko) * 2013-06-13 2014-12-23 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템
KR102063508B1 (ko) 2013-06-13 2020-01-08 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템
EP3163610A1 (en) * 2015-11-02 2017-05-03 MediaTek Inc. Semiconductor package with coated bonding wires
CN106941098A (zh) * 2015-11-02 2017-07-11 联发科技股份有限公司 半导体封装及其制造方法
US11257780B2 (en) 2015-11-02 2022-02-22 Mediatek Inc. Semiconductor package having multi-tier bonding wires and components directly mounted on the multi-tier bonding wires
US10847488B2 (en) 2015-11-02 2020-11-24 Mediatek Inc. Semiconductor package having multi-tier bonding wires and components directly mounted on the multi-tier bonding wires
US10037936B2 (en) 2015-11-02 2018-07-31 Mediatek Inc. Semiconductor package with coated bonding wires and fabrication method thereof
US10461056B2 (en) 2016-05-20 2019-10-29 Infineon Technologies Ag Chip package and method of forming a chip package with a metal contact structure and protective layer, and method of forming an electrical contact
CN107403782A (zh) * 2016-05-20 2017-11-28 英飞凌科技股份有限公司 芯片封装体、形成芯片封装体的方法和形成电接触结构的方法
CN107403782B (zh) * 2016-05-20 2020-05-19 英飞凌科技股份有限公司 芯片封装体
EP3319115A1 (fr) * 2016-11-03 2018-05-09 STMicroelectronics (Grenoble 2) SAS Procédé de réalisation d'une connexion électrique entre une puce électronique et une plaque de support et dispositif électronique
US10224306B2 (en) 2016-11-03 2019-03-05 Stmicroelectronics (Grenoble 2) Sas Method for forming an electrical connection between an electronic chip and a carrier substrate and electronic device
US10643970B2 (en) 2016-11-03 2020-05-05 Stmicroelectronics (Grenoble 2) Sas Method for forming an electrical connection between an electronic chip and a carrier substrate and electronic device
CN108022908A (zh) * 2016-11-03 2018-05-11 意法半导体(格勒诺布尔2)公司 用于形成电连接的方法和电子器件
FR3058260A1 (fr) * 2016-11-03 2018-05-04 Stmicroelectronics (Grenoble 2) Sas Procede de realisation d'une connexion electrique entre une puce electronique et une plaque de support et dispositif electronique
US11557566B2 (en) 2016-11-03 2023-01-17 Stmicroelectronics (Grenoble 2) Sas Method for forming an electrical connection between an electronic chip and a carrier substrate and electronic device
US12170262B2 (en) 2016-11-03 2024-12-17 Stmicroelectronics (Grenoble 2) Sas Method for forming an electrical connection between an electronic chip and a carrier substrate and electronic device
JP2019009171A (ja) * 2017-06-21 2019-01-17 スタンレー電気株式会社 半導体装置
JP7096649B2 (ja) 2017-06-21 2022-07-06 スタンレー電気株式会社 半導体装置
CN112292766A (zh) * 2018-06-04 2021-01-29 雷莱昂等离子有限责任公司 具有电陶瓷部件的装置
JP2021526731A (ja) * 2018-06-04 2021-10-07 レリオン プラズマ ゲーエムベーハー エレクトロセラミック部材を有する装置
JP7402825B2 (ja) 2018-06-04 2023-12-21 レリオン プラズマ ゲーエムベーハー エレクトロセラミック部材を有する装置
US12102009B2 (en) 2018-06-04 2024-09-24 Relyon Plasma Gmbh Device having an electro-ceramic component

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