JP2013179348A - イオン性金属溶液を用いて触媒処理されたシリコン表面の反射防止エッチング - Google Patents
イオン性金属溶液を用いて触媒処理されたシリコン表面の反射防止エッチング Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 183
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 172
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 172
- 239000010703 silicon Substances 0.000 title claims abstract description 172
- 229910052751 metal Inorganic materials 0.000 title abstract description 58
- 239000002184 metal Substances 0.000 title abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 104
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- 239000002082 metal nanoparticle Substances 0.000 claims description 8
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- 239000000243 solution Substances 0.000 abstract description 204
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- 229910052737 gold Inorganic materials 0.000 abstract description 35
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
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- 238000000576 coating method Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
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- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
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- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
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- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】シリコン表面を被覆するように、容器に一定量のエッチング溶液を充填する。エッチング溶液には、触媒溶液および酸化剤−エッチング剤溶液、例えば、フッ化水素酸および過酸化水素の水溶液を含む。触媒溶液は、触媒金属の金属含有分子またはイオン種を与える溶液であってよい。シリコン表面を、超音波撹拌などを用いて容器内のエッチング溶液を撹拌することによりエッチングを行い、エッチングには、エッチング溶液の加熱、シリコン表面への光の照射を含むことができる。エッチング中、酸化剤−エッチング剤溶液の存在下において、塩化金酸の希釈溶液などの触媒溶液が、エッチングプロセスを加速または促進する金または銀ナノ粒子などの金属粒子を放出することができる。
【選択図】図1
Description
全体を参照により本明細書に組み込まれた、整理番号NREL07−10で分類された「シリコン表面のナノ粒子系エッチング」と題した同時係属中の米国特許出願第12/053372号に関連する。
米国政府は、ユナイテッド ステイツ デパートメント オブ エナジーとミッドウエスト リサーチ インスティチュートの一部門であるナショナル リニューワブル エナジー ラボラトリーとの間で締結した契約書第DE−AC36−99GO10337号に基づき、本発明の権利を有する。
Claims (10)
- シリコン表面をテクスチャ加工する方法であって、
容器内にシリコン表面を有する基板を位置決めすることと、
前記基板のシリコン表面を覆うように、触媒溶液、およびエッチング剤とシリコン酸化剤とを含む酸化剤−エッチング剤溶液を含む一定量のエッチング溶液を前記容器に充填することと、
前記容器内で前記エッチング溶液を撹拌することにより前記シリコン表面をエッチングすることとを含み、
該エッチング中に、前記触媒溶液が複数の金属ナノ粒子を供給し、
前記エッチングにおいて、前記金属ナノ粒子により前記シリコン表面に複数のトンネルを形成し、
前記トンネルのそれぞれが、直径に対する深さの、高いアスペクト比を有している、
シリコン表面をテクスチャ加工する方法。 - 前記トンネルのそれぞれの前記高いアスペクト比が30ナノメートル未満の直径および50〜300ナノメートルの範囲内の深さを含む請求項1記載の方法。
- 前記トンネルのそれぞれが、200ナノメートルより大きく、かつ、300ナノメートル未満の深さを有する請求項2記載の方法。
- エッチング処理された前記シリコン表面が、350〜1000ナノメートルの範囲の波長において10パーセント未満の反射率となるまで前記エッチングが行われる請求項2記載の方法。
- 前記エッチング剤がHFを含み、前記シリコン酸化剤がH2O2であり、前記金属ナノ粒子が遷移金属ナノ粒子を含む請求項2記載の方法。
- 前記基板が、n型をドープされた、またはリンを拡散されたウエハーを含み、前記エッチング中に、光で前記シリコン表面を照射するために光源を操作することをさらに含む請求項2記載の方法。
- 基板、および、
該基板上に備えられるエッチングされたシリコン表面を含み、
前記エッチングされたシリコン表面は、前記エッチングされたシリコン表面を覆うエッチング溶液を撹拌することを含むエッチングによって形成され、
前記エッチング溶液は、触媒溶液、および、エッチング剤とシリコン酸化剤とを含む酸化剤−エッチング剤溶液を含み、
前記エッチング中に、前記触媒溶液が複数の金属ナノ粒子を供給し、
前記エッチングにおいて、前記シリコン表面に複数のトンネルが形成され、前記トンネルのそれぞれが、直径に対する深さの、高いアスペクト比を有しているシリコンウエハー。 - 前記トンネルのそれぞれが30ナノメートル未満の直径および50〜300ナノメートルの範囲内の深さを有する請求項7記載のシリコンウエハー。
- 前記トンネルのそれぞれが、200ナノメートルより大きく、かつ、300ナノメートル未満の深さを有する請求項8記載のシリコンウエハー。
- 前記エッチングされたシリコン表面が、350〜1000ナノメートルの波長範囲において10パーセント未満の反射率を有している請求項8記載のシリコンウエハー。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/053,445 US20090236317A1 (en) | 2008-03-21 | 2008-03-21 | Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions |
US12/053,445 | 2008-03-21 |
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JP2011500974A Division JP5284458B2 (ja) | 2008-03-21 | 2009-03-20 | イオン性金属溶液を用いて触媒処理されたシリコン表面の反射防止エッチング |
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JP5763709B2 JP5763709B2 (ja) | 2015-08-12 |
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JP2013111962A Active JP5763709B2 (ja) | 2008-03-21 | 2013-05-28 | イオン性金属溶液を用いて触媒処理されたシリコン表面の反射防止エッチング |
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Country Status (5)
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US (1) | US20090236317A1 (ja) |
EP (1) | EP2255380A4 (ja) |
JP (2) | JP5284458B2 (ja) |
CN (1) | CN102007581B (ja) |
WO (1) | WO2009117642A2 (ja) |
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KR101631042B1 (ko) | 2007-08-21 | 2016-06-24 | 더 리전트 오브 더 유니버시티 오브 캘리포니아 | 고성능 열전 속성을 갖는 나노구조체 |
EP2250446B1 (en) | 2008-01-25 | 2020-02-19 | Alliance for Sustainable Energy, LLC | Indirect evaporative cooler |
US8729798B2 (en) | 2008-03-21 | 2014-05-20 | Alliance For Sustainable Energy, Llc | Anti-reflective nanoporous silicon for efficient hydrogen production |
US8815104B2 (en) * | 2008-03-21 | 2014-08-26 | Alliance For Sustainable Energy, Llc | Copper-assisted, anti-reflection etching of silicon surfaces |
US8075792B1 (en) * | 2008-03-21 | 2011-12-13 | Alliance For Sustainable Energy, Llc | Nanoparticle-based etching of silicon surfaces |
WO2009120983A2 (en) * | 2008-03-27 | 2009-10-01 | Rensselaer Polytechnic Institute | Ultra-low reflectance broadband omni-directional anti-reflection coating |
CN102084467A (zh) | 2008-04-14 | 2011-06-01 | 班德加普工程有限公司 | 制作纳米线阵列的方法 |
FR2945663B1 (fr) | 2009-05-18 | 2012-02-17 | Inst Polytechnique Grenoble | Procede de gravure d'un materiau en presence de particules solides. |
WO2011060193A1 (en) * | 2009-11-11 | 2011-05-19 | Alliance For Sustainable Energy, Llc | Wet-chemical systems and methods for producing black silicon substrates |
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CN102007581B (zh) | 2014-03-05 |
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WO2009117642A2 (en) | 2009-09-24 |
JP2011515858A (ja) | 2011-05-19 |
WO2009117642A3 (en) | 2009-11-19 |
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