CN102084467A - 制作纳米线阵列的方法 - Google Patents
制作纳米线阵列的方法 Download PDFInfo
- Publication number
- CN102084467A CN102084467A CN2009801220858A CN200980122085A CN102084467A CN 102084467 A CN102084467 A CN 102084467A CN 2009801220858 A CN2009801220858 A CN 2009801220858A CN 200980122085 A CN200980122085 A CN 200980122085A CN 102084467 A CN102084467 A CN 102084467A
- Authority
- CN
- China
- Prior art keywords
- silicon
- described method
- nano
- array
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 72
- 239000002070 nanowire Substances 0.000 title claims abstract description 65
- 230000008569 process Effects 0.000 title abstract description 7
- 238000003491 array Methods 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 86
- 239000010703 silicon Substances 0.000 claims abstract description 86
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 82
- 238000005530 etching Methods 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000002105 nanoparticle Substances 0.000 claims abstract description 21
- 239000007800 oxidant agent Substances 0.000 claims abstract description 19
- 239000007864 aqueous solution Substances 0.000 claims abstract 2
- 238000001465 metallisation Methods 0.000 claims description 14
- 230000001590 oxidative effect Effects 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 229910001416 lithium ion Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 150000003376 silicon Chemical class 0.000 claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 230000009257 reactivity Effects 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 230000005587 bubbling Effects 0.000 claims description 2
- 230000002708 enhancing effect Effects 0.000 claims description 2
- 239000013081 microcrystal Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- 239000000243 solution Substances 0.000 claims 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 1
- 239000011358 absorbing material Substances 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 229910052744 lithium Inorganic materials 0.000 claims 1
- 239000005543 nano-size silicon particle Substances 0.000 claims 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 12
- 239000002086 nanomaterial Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000004793 Polystyrene Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 229920002223 polystyrene Polymers 0.000 description 7
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000006210 lotion Substances 0.000 description 4
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000006555 catalytic reaction Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 2
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241000252506 Characiformes Species 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 2
- 239000005642 Oleic acid Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005518 electrochemistry Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- XXQBEVHPUKOQEO-UHFFFAOYSA-N potassium superoxide Chemical compound [K+].[K+].[O-][O-] XXQBEVHPUKOQEO-UHFFFAOYSA-N 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- BZSXEZOLBIJVQK-UHFFFAOYSA-N 2-methylsulfonylbenzoic acid Chemical compound CS(=O)(=O)C1=CC=CC=C1C(O)=O BZSXEZOLBIJVQK-UHFFFAOYSA-N 0.000 description 1
- GDDNTTHUKVNJRA-UHFFFAOYSA-N 3-bromo-3,3-difluoroprop-1-ene Chemical compound FC(F)(Br)C=C GDDNTTHUKVNJRA-UHFFFAOYSA-N 0.000 description 1
- XWNSFEAWWGGSKJ-UHFFFAOYSA-N 4-acetyl-4-methylheptanedinitrile Chemical compound N#CCCC(C)(C(=O)C)CCC#N XWNSFEAWWGGSKJ-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZKQDCIXGCQPQNV-UHFFFAOYSA-N Calcium hypochlorite Chemical compound [Ca+2].Cl[O-].Cl[O-] ZKQDCIXGCQPQNV-UHFFFAOYSA-N 0.000 description 1
- 244000025254 Cannabis sativa Species 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical group O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- SPAGIJMPHSUYSE-UHFFFAOYSA-N Magnesium peroxide Chemical compound [Mg+2].[O-][O-] SPAGIJMPHSUYSE-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004153 Potassium bromate Substances 0.000 description 1
- 235000019593 adhesiveness Nutrition 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- ZJRXSAYFZMGQFP-UHFFFAOYSA-N barium peroxide Chemical compound [Ba+2].[O-][O-] ZJRXSAYFZMGQFP-UHFFFAOYSA-N 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 230000004071 biological effect Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- YALMXYPQBUJUME-UHFFFAOYSA-L calcium chlorate Chemical compound [Ca+2].[O-]Cl(=O)=O.[O-]Cl(=O)=O YALMXYPQBUJUME-UHFFFAOYSA-L 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 229940117975 chromium trioxide Drugs 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N chromium trioxide Inorganic materials O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- GAMDZJFZMJECOS-UHFFFAOYSA-N chromium(6+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+6] GAMDZJFZMJECOS-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- LZDSILRDTDCIQT-UHFFFAOYSA-N dinitrogen trioxide Chemical compound [O-][N+](=O)N=O LZDSILRDTDCIQT-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- -1 nitric acid propyl diester Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 235000019396 potassium bromate Nutrition 0.000 description 1
- 229940094037 potassium bromate Drugs 0.000 description 1
- VKJKEPKFPUWCAS-UHFFFAOYSA-M potassium chlorate Chemical compound [K+].[O-]Cl(=O)=O VKJKEPKFPUWCAS-UHFFFAOYSA-M 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 description 1
- 229960002218 sodium chlorite Drugs 0.000 description 1
- BAZAXWOYCMUHIX-UHFFFAOYSA-M sodium perchlorate Chemical compound [Na+].[O-]Cl(=O)(=O)=O BAZAXWOYCMUHIX-UHFFFAOYSA-M 0.000 description 1
- 229910001488 sodium perchlorate Inorganic materials 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
- B01J20/02—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material
- B01J20/10—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material comprising silica or silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
- B01J20/28—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties
- B01J20/28002—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties characterised by their physical properties
- B01J20/28004—Sorbent size or size distribution, e.g. particle size
- B01J20/28007—Sorbent size or size distribution, e.g. particle size with size in the range 1-100 nanometers, e.g. nanosized particles, nanofibers, nanotubes, nanowires or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/049—Manufacturing of an active layer by chemical means
- H01M4/0492—Chemical attack of the support material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/134—Electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/362—Composites
- H01M4/366—Composites as layered products
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
- H01M2004/027—Negative electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
- H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/66—Selection of materials
- H01M4/661—Metal or alloys, e.g. alloy coatings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Composite Materials (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Plasma & Fusion (AREA)
- Silicon Compounds (AREA)
- Weting (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
提供了一种蚀刻含硅基底来形成纳米线阵列的方法。在该方法中,以这样的方式来将纳米粒子和金属膜沉积到基底上,即,该金属在期望蚀刻之处存在和与硅接触,并且在其他地方被阻止与硅接触或者不存在。将该金属化基底浸入到含有HF和氧化剂的蚀刻剂水溶液中。以此方式来生产具有受控的直径和长度的纳米线阵列。
Description
交叉引用的相关申请。
本申请要求2008年4月14日申请的US临时申请No.61/044573和2008年12月29日申请的61/141082的优先权。这些申请在此引入作为参考。
技术领域
本申请涉及纳米技术领域。
背景技术
结构化和图案化硅的能力对于许多应用来说是重要的。特别令人感兴趣的是图案化硅来制造纳米结构。关于本领域技术人员已知的硅制作方法的相关信息可以例如在Sami Franssila,Introduction-Microfabrication(John Wiley & Sons,2004)中找到,并且在此引入作为参考。
在过去的十年内,半导体纳米线已经成为研究的焦点,这归因于它们令人感兴趣的物理,化学和生物性能。特别令人感兴趣的是硅纳米线,因为硅是地壳中最丰富的原料之一,并且已经变成了许多基于其设计的电子,光电,电化学和电机械装置的基石。
今天,许多纳米体系并未得到商业应用,这归因于与制作有关的大的成本,和纳米线合成的可缩放性的限制。纳米线是使用分子束外延(MBE),金属-有机化学气相沉积(MOCVD),和物理气相沉积(PVD)来从下向上生长的。它们还可以使用技术例如反应性离子蚀刻(RIE)和感应耦合等离子体(ICP)来从上向下来制作。这些系统需要高温和/或低压,这是导致高成本的主因。向前推动的解决方案(其基于能够在环境条件运行的技术)对于产生它们的低成本,简单设计和易于使用来说是重要的。
最近的工作已经证实了可以使用由金属盐和强酸(典型的AgNO3和HF)构成的溶液来制作硅纳米线。(参见参考文献(a))。通过控制溶液中每种成分的浓度,硅能够正常的蚀刻到晶片的平面上,形成平均直径150nm,直径范围为20-300nm的垂直对准的硅纳米线。通过实现了将银从溶液中沉淀出来,并且催化该硅的蚀刻,该技术已经改进为将H2O2加入到化学浴中和Ag金属直接沉积到硅上二者的组合。在Ag沉积之前,将均匀尺寸的聚苯乙烯球进行分散,目的是使用它们作为蚀刻掩模和限定该纳米线。(参见参考文献(e))。结果,证实了具有均匀直径和长度的硅纳米线的有序阵列。
用这种技术所实现的最终直径是受限的。达到亚-100nm尺寸的能力对于多种电子,光电,电化学和电机械应用来说是有价值的。例如,处于亚-100nm范围中时,硅开始表现出不同于体硅(bulk silicon)的新的性能。另外,在低纳米尺寸的表面积的增加是有价值的。
发明内容
提供了一种蚀刻含硅基底来形成纳米线阵列的方法。在这种方法中,以如下方式来将纳米粒子和金属膜沉积到基底上,即,该金属在期望蚀刻之处存在和与硅接触,并且在其他地方被阻止与硅接触或者不存在。将该金属化基底浸入到含有HF和氧化剂的蚀刻剂水溶液中。以此方式来生产具有受控的直径和长度的纳米线阵列。
附图说明
图1表示了使用本发明的一种实施方案,来获得直径为12-70nm的纳米线的结果。
图2表示了使用下面的部分B中所示的一种可选择的一种实施方案,来获得纳米线的结果。
图3示意性地表示了一种装置,用于进行本发明的方法,使用氧气作为氧化剂。
图4表示了对硅使用金属增强的蚀刻,来在硅晶片上获得微结构化的结果。无意(unintentional)线是在沟槽中形成的。
具体实施方式
在本发明的一方面,提供了一种蚀刻含硅基底,来形成纳米结构的方法。在这种方法中,以如下方式来在基底上沉积和图案化金属膜,即,该金属在期望蚀刻之处存在和与硅接触,并且在其他地方被阻止与硅接触或者不存在。将该金属化基底浸入到含有大约4-大约49重量%HF和氧化剂的蚀刻剂水溶液中。
在上述方法中,为了达到亚-100nm的纳米线,可以使用亚-100nm的纳米粒子来将银与硅隔开。该纳米粒子可以由多种物质制成,例如二氧化硅,氧化铁或者聚合物。
A.第一示例性方法。
一种示例性方法使用了SiO2纳米粒子均匀分散在异丙醇中的溶液(在IPA中5wt%的SiO2)的旋涂,该纳米粒子的粒度是12-30nm,旋涂转速是4000RPM。在旋涂之后,将该样品在高温加热,导致溶剂蒸发。一旦该样品干燥,则将40nm的Ag溅射沉积到上面,目的是包敷该SiO2纳米粒子以及其之间的裸露硅空间。将样品在HF/H2O2溶液中浸渍10分钟的时间。蚀刻反应在Ag/Si界面开始,并且该纳米粒子充当了屏障物,通过其来掩蔽和定义纳米结构。纳米粒子的尺寸(其是根据期望的应用来选择的)影响所形成的一维纳米结构的尺寸和形状。一些聚团在SiO2纳米粒子之间发生,产生了单个聚团量级的尺寸。通过选择该粒子在溶液中的浓度以及沉积/旋涂该粒子的方法,能够将形成纳米线的聚团限制到12-70nm。结果表示在图1中。
B.第一选项。
在上述方法的一种变化中,使用氧化铁纳米粒子(5-10nm),其的表面已经用油酸进行了预处理,并且其分散在氯仿中。进行这种表面处理的目的是防止聚团和保持稳定的纳米粒子悬浮液。在这种情况中,旋涂不是必需的。纳米粒子在硅基底上的沉积是如下来实现的:将几滴溶液在静态条件(无旋转)滴到所述表面上。在室温的快速蒸发产生了氧化铁粒子在硅基底上的单分散层,具有很少到没有的聚团。不希望受限于理论,据信该单分散层至少部分的是由预先设计的表面张力性能和溶剂的高蒸气压形成的。
在这种可选择的方法中,将Ag溅射沉积到所述表面上,并且向该基底及其之间的空间涂覆氧化铁粒子。将该样品浸入类似的HF/H2O2溶液中,目的是开始蚀刻反应和形成纳米线。该结果的一个例子从图2中可见。这里由于该干燥方法而出现了一些集束,使得难以精确的确定实际的纳米线尺寸。但是,全部可测量的结构的直径小于30nm。
C.第二选项。
在所述方法另外一种变化中,可以使用其他氧化剂来代替H2O2-HF蚀刻剂溶液中的H2O2。氧化剂是这样一种物质,其容易转化氧原子或者在氧化还原化学反应中倾向于获得电子。一种这样的氧化剂是纯氧,其可以通过将氧气鼓泡通过HF来引入。其他氧化剂包括:臭氧,氯,碘,高氯酸铵,高锰酸铵,过氧化钡,溴,氯酸钙,次氯酸钙,三氟化氯,铬酸,三氧化铬(铬酸酐),过氧化物例如过氧化氢,过氧化镁,过氧化二苯甲酰和过氧化钠,三氧化二氮,氟,高氯酸,溴酸钾,氯酸钾,过氧化钾,硝酸丙基酯,氯酸钠,亚氯酸钠和高氯酸钠。
令人期望的是可以使用较低反应性的可选择的氧化剂来代替H2O2。比较朝着沉积的金属(例如,银)的反应性,在氧化剂的选择中硅或者二氧化硅是令人感兴趣的。反应性可以例如如下来测量:通过在具体的时间期间内,反应进行的程度来测量,或者如物理化学和化学动力学教科书中所讨论的那样,通过测量反应速率来测量。(参见例如,Peter W.Atkins & Julio de Paula,Atkins' Physical Chemistry(第8版,2006),特别是第22和23章)。测量可以在这样的条件下进行,例如在类似于蚀刻方法的这些温度和压力进行。
一种示例性的方法如下:
选择电阻率大于20 ohm-cm的硅材料,其的表面具有(100),(110),(111)或者任何可利用的取向。如果进行下面的方法,则无定形的和/或微晶材料也将产生垂直取向的纳米线。
使用一系列的溶剂,通过将每个在丙酮、甲醇和异丙醇中超声波清洗3分钟,来对所述基底进行预清洁。然后将该基底在流动的去离子水(DI)的储槽中冲洗3分钟,来除去溶剂清洁中剩余的任何残留物。将该硅置于由3份96%H2SO4和1份30wt%H2O2构成的食人鱼洗液(Piranha solution)中15分钟,目的是除去任何另外的有机物和产生亲水表面。然后从浴液中取出该基底,并且再次置于流动的去离子水(DI)的储槽中3分钟,来除去任何残留的酸。取出该基底,并且用氮气吹干。
10nm氧化铁纳米粒子在氯仿中的胶体悬浮液是通过将来自OceanNanotech的产品#SOR-10-0050稀释到1mg/mL的浓度来制备的。如下来用氧化铁涂覆所述的硅晶片:将所述的硅浸入到该胶体悬浮液中,然后除去基底,以使得表面通常垂直于运动的垂直方向,来使得氯仿铺展在该表面上。亲水表面和油酸官能化的氧化铁纳米粒子性质的组合,产生了一种自然的自组装,其限制了聚团,并且给粒子带来了一些合理的空间。然后将该样品在80℃的轻便电炉上焙烤2分钟,并且在金属沉积之前,使用原位O2等离子体进行清洁。
另外氧化铁纳米粒子之外,100nm聚苯乙烯球也在这种方法中连续使用。在这种情况中,亲水表面是在上述的硅基底上产生的。将聚苯乙烯球(购自Duke Scientific Corporation)稀释到1%的浓度,并且以500RPM速度旋涂到基底上5s,然后升高到2000RPM旋涂40s。该聚苯乙烯球在所述表面上产生了单个的单层。在将该样品插入到金属沉积工具(30W,200mTorr)之前,使用O2等离子体来降低等离子去胶机中的聚苯乙烯球的尺寸和空间。在等离子体清洁过程中加热所述样品,这会改变聚苯乙烯的性能(或者熔融),使得它难以继续该收缩过程。为了解决这个问题,将聚苯乙烯使用1分钟的短间隔进行蚀刻,从工具上除去基底,并且在下一个1分钟蚀刻之前,将它冷却到室温。优选该收缩方法是在用Ar或者O2的金属沉积之前,在原位进行的(在金属沉积工具内)。
银(Ag)是经由物理气相沉积,在溅射器,热蒸发器或者电子束蒸发器中沉积的。令人期望的是产生连续的膜,这里没有破裂或者裂缝,该破裂或者裂缝会使得膜的一部分变成与其余部分分开。因为HF浓度是变化的,因此最佳膜厚必需变化。
一旦所述晶片涂覆了适当的Ag膜,则在开始蚀刻反应之后,将该HF溶液是陈化。HF的浓度可以从饱和浓度(大约49wt%)一直降低到非常低的名义浓度。初始的观察表明,所形成的纳米结构的长度随着HF浓度的降低而增大。可以使用低到2wt%和更低的浓度。例如可以使用8wt%的HF溶液。
将O2气流入到所述浴液中,来产生强力的鼓泡,持续10分钟。一旦该浴液陈化,则浸入所述样品。在该蚀刻完成时,除去样品,并且放入流动的DI水储槽中,用N2吹干。在这个时间点,表面上剩余的Ag可以用银蚀刻剂,例如由Transene Corporation提供的蚀刻剂来除去。
图3表示了一种装置,使用氧气作为氧化剂。这里有存储HF蚀刻剂40的容器。在该容器中,存在着银/硅基底42。这里有氧气源44,其产生氧气泡例如46和48。该氧气源入口可以置于基底水平线之处、之上或者之下。使用这种不太强的氧化剂,全部的线是通过有意设计的纳米粒子掩模来形成的,其旋涂到所述表面的上面。很显然,在蚀刻过程中在该金属膜中没有形成缺陷。
使用可选择的氧化剂的方法的一种优点是它们能够消除在上述方法的一些变化中所形成的无意纳米线(“草”),同时仍然产生令人期望的亚-100nm纳米线,同时使用薄的连续金属层,用于硅的催化蚀刻。图4表示了无意纳米线。避免这些无意纳米线既节约了用于消除它们的蚀刻步骤,还避免了这样的蚀刻步骤所导致的纳米结构的角落和边缘的圆化。
虽然不希望受限于理论,但是据信在本发明这些方法中所用的一些可选择的氧化剂不侵袭金属,或者对金属的侵袭程度远低于H2O2。这可能是为什么使用可选择的氧化剂的方法避免了无意纳米线形成的原因。为此原因,令人期望的是使用这样的氧化剂,其与金属的反应没有H2O2那样容易,或者与金属的反应速率低于H2O2。
为了避免无意线,令人期望的是该金属膜没有小的无意空穴,并且沉积在没有氧化物的清洁的硅表面上。
本发明方法另外一种优点是它们能够在特定的晶体取向上延伸。使用本发明的至少一些方法,不管硅表面的晶体取向如何,该纳米线将至少大致垂直于所述表面进行蚀刻。为了实现这样的目的,令人期望的是该金属膜不具有破裂或者裂缝,该破裂或者裂缝会导致膜的一部分与其余部分分开。还令人期望的是该金属膜具有足够的粘附性,并且沉积在清洁的硅表面上。在纳米线轴和垂直于基底的矢量之间期望的角度可以例如小于大约0.25度,大约0.5度,大约1度或者大约2度。
使用本发明的方法,可以制造具有明显锥度的线,这导致该线的直径随着蚀刻的进行稍有增加。已经发现该锥度随着HF浓度的增加而增加。对于某些应用来说,该锥度不是令人期望的。但是,对于光伏应用来说,锥度会是有益的。例如,使用微小的锥度,纳米线中的游离载体将冲出所述线的边缘,并因此倾向于向下蔓延向基底。如果该光伏电池的p-n结处于基底中,而非纳米线中,则可以预期这种朝着基底提高的扩散会提高电池的效率。令人期望的锥角可以是例如不大于大约0.5度,大约1度,大约2度或者大约4度,或者是大约0.5度到大约1度,大约2度或者大约4度。
使用本发明的方法,能够实现纳米线的平均直径(例如,具有平均值或者中值)低于大约150nm,低于大约125nm,低于大约100nm,低于大约70nm或者低于大约50nm。小的纳米线在某些应用中是重要的,例如其中该小的尺寸改变了硅的带结构的应用中。期望的是例如大部分的或者至少大约75%或者大约90%或者大约95%的纳米线的直径小于所选择的尺寸例如上述的这些尺寸。
D.应用。
本发明的方法用于将硅构造成光电装置(参见参考文献(i))。它们可以用于利用光电子或者光伏效应的装置中,例如太阳能电池(参见例如参考文献(j)和(k)),光电探测器,光电二极管(参见参考文献(a)),光电晶体管,光电倍增器和集成的光学电路。经由这种方法制作的硅纳米线阵列或者单个的纳米线可以用于这些应用的每个中。
本发明的方法可以用于生产用多晶硅制造的或者包含多晶硅的装置。本发明包括这样的方法,其能够与任何晶体取向的硅一起使用。这样的方法可以用于对多晶硅的表面进行纹理化和/或形成纳米线。多晶硅是一种比晶体硅更便宜的材料,但是它典型的比单晶硅更难以纹理化和结构化,这归因于所述晶粒的无规取向。本发明的方法同样能够用来在无定形硅中形成纳米线。
硅纳米线阵列可以用于这样的应用中,在其中硅将经历应力或者应变,在这里该纳米结构能够吸收和松弛这种应力或者应变。例如,纳米线能够充当体硅与另外一种在其上面生长的材料(其与体硅之间不是晶格匹配的)之间的界面层。
本发明的方法还能够应用于锂离子电池工艺。已经观察到硅是锂离子电池中的阳极材料的一种期望的备选品,这归因于它低的放电势和高的带电能力。它在过去的应用是有限的,这归因于与离子插入和离子抽出有关的体积大的变化。在硅中形成的大量的应力和应变导致硅层降解,产生了非常短的性能寿命。由于纳米线能够经受这些应力和应变,因此对它们进行了研究开发(参见参考文献(1))。在锂离子电池阳极的制造中,本发明方法所提供的这样的能力是有利的,即,形成良好有序的和对准的纳米结构,并且对所形成的直径和它们之间的空隙间隔进行有力控制这样的能力。另外,这样的事实,即,多孔硅(纳米孔或者微孔)还可以经由本发明的方法来制作这样的事实,将使得人们能够制作另外一种阳极几何结构,该结构能够经受锂离子电池应用中的离子插入/抽出的应力和应变。
另外还可以形成特定类型的硅(所谓的n类型)之外的多孔模板或者硅纳米线阵列,并且利用备选的技术例如蒸气,液体,固体(VLS)方法来用p类型的硅纳米线填充所述的孔,产生新的n/p结的构造,其能够用于广泛的多种光电的(LED,光伏的)和电子的(晶体管)应用。(关于VLS方法的一些总说明,参见参考文献(p))。这种方法是特别有利的,因为Ag粒子(其催化了硅基底的蚀刻,来形成模板)还能够用于催化孔底部的线的生长(例如,在VLS或者VSS这),来合成该线。另外,该Ag粒子能够充当用于所述装置的电接线。不同于硅的广泛的多种材料也可以在模板中形成。几个例子是Bi,Ge,GaN,ZnO,和GaAs。
本发明的方法可以用来产生纳米结构,其使得硅进入到中间带光伏材料(IBPV)中。(参见参考文献(n))。硅具有用于IBPV的优异的带结构,限定能够增强具体的电子跃迁的强度。进行此的唯一方式是形成硅纳米线的致密阵列,并且具体控制线的直径,掺杂和晶体取向,如参考文献(i)所述。本发明的方法可以用于制造这样的纳米线阵列。
下面的参考文献是与本申请有关的和令人感兴趣的:
(a)K.Peng,Z.Huang,和J.Zhu,Adv.Mater.16(1)(2004)73-76;
(b)T.Qiu,X.L.Wu,X.Yang,G.S.Huang,和Z.Y.Zhang,App.Phys.Lett.,84(19)(2004)3867;
(c)H.Fang,Y.Wu,J.Zhao,和J.Zhu,Nanometer technology17(2006)3768和Y.Yang,P.Chu,Z.Wu,S.Pu,T.Hung,K.Huo,G.Qian,W.Zhang,X.Wu,Appl.Surf.Sci.254(2008)3061和X.Li和P.Bohn,Appl.Phys.Lett.77(16)(2000)2572和H.Asoh,F.Arai,S.Ono,Electrochem.Comm.9(2007)535;
(d)K.Peng,J.Hu,Y.Yan,Y.Wu,H.Fang,Y.Xu,S.Lee,和J.Zhu Adv.Mat.16(2006)387;
(e)Z.Huang,H.Fang,J.Zhu,Adv.Fun.Mat.19(2007)pg.744;
(f)K.Peng,M.Zhang,A.Lu,N.Wong,R.Zhang,S.Lee,App.Phys.Lett.90(2007)163123;
(g)US临时专利申请No.61/044573,2008年4月14日申请;
(h)US临时专利申请No.61/195872,2008年10月9日申请;
(i)US专利申请公开No.2007/0278476,2007年2月27日申请;
(j)L.Tsakalakos,J.Balch,J.Fronheiser等人 App.Phys.Lett.91(23)(2007)233117;
(k)M.D.Kelzenberg,D.B.Turner-Evans,B.M.Kayes等人,Nano Lett.8(2)(2008)710-714;
(l)C.K.Chan,H.Peng,G.Liu,K.McIlwrath,X.F.Zhang,R.A.Huggins,和Y.Cui Nature Nanotech.3(2008)31-35;
(m)US公开专利申请No.2007/0190542,2006年10月3日申请;
(n)A.Luque,A.Marti,Phys.Rev.Lett.78(26)(1997)5014-5017;
(o)Q.Shao,A.A.Balandin,App.Phys.Lett.91(2007)163503;
(p)Y.Cui等人,App.Phys.Lett.78(2001)2214-2216。
全部的专利,专利申请和其中所提及的公开文献在此以它们全部引入作为参考。但是,在将包含措词定义的专利,专利申请或者公开文献引入作为参考的情况中,这些措词定义应当理解为可以应用于它们存在于其中的所引入的专利,专利申请或者公开文献中,并且不可应用于该申请文本的其他部分中,特别是该申请的权利要求中。
Claims (32)
1.一种对准的硅纳米线阵列,该硅纳米线在基底的晶体硅表面上附着到该基底上,其中大部分的该纳米线的直径不大于大约150nm,并且至少大致垂直地附着到该基底上,其中在该阵列附着之处的晶体硅表面是处于不同于(100)和(111)的取向上的晶体平面。
2.权利要求1所述的阵列,其中该硅表面的至少一部分涂覆有银。
3.权利要求1所述的阵列,其中大部分的纳米线的直径低于硅中的电子或者空穴的相干长度。
4.权利要求1所述的阵列,其中大部分的纳米线的直径低于硅的电子或者空穴的德布罗意波长。
5.一种蚀刻的纳米线阵列,其中至少大约75%的纳米线的直径低于大约150nm。
6.权利要求5的纳米线阵列,其中该蚀刻是在反应性低于H2O2的氧化剂存在下进行的。
7.一种纳米线阵列,其包含多晶硅。
8.权利要求7的纳米线阵列,其中该阵列是通过蚀刻基底来形成的,该基底主要包含无定形的或者多晶硅。
9.权利要求8的纳米线阵列,其中该阵列中的大部分纳米线的直径不大于150nm。
10.一种蚀刻含硅基底来形成结构的方法,其包含步骤:
(a)将纳米粒子沉积到含硅基底的表面上,
(b)以如下方式将金属沉积到该纳米粒子和硅的上面,即,该金属在期望蚀刻之处存在和与硅接触,并且在其他地方被阻止与硅接触或者不存在,和
(c)将该金属化基底与蚀刻剂水溶液接触,该水溶液包含大约2-大约49重量%的HF和氧化剂,
其中该方法得到纳米线阵列,其中纳米线的平均直径小于大约125nm。
11.权利要求10所述的方法,其中该氧化剂是鼓泡通过该蚀刻剂水溶液的氧气。
12.权利要求10所述的方法,其中在步骤(b)中沉积和图案化的金属是银。
13.权利要求12所述的方法,其中银的厚度小于大约50nm。
14.权利要求10所述的方法,其中步骤(a)-(c)得到纳米线阵列,其中平均纳米线直径小于大约100nm。
15.权利要求14所述的方法,其中步骤(a)-(c)得到纳米线阵列,其中所述纳米线直径小于大约50nm。
16.权利要求10所述的方法,其中步骤(a)-(c)得到锥形的纳米线阵列,以使得纳米线的底部大于尖端。
17.权利要求10所述的方法,其中该纳米粒子充当了所述金属和含硅基底之间的屏障物,来防止该金属与基底的某些区域中的硅接触。
18.权利要求10所述的方法,其中使用该纳米粒子来除去不期望蚀刻之处的金属,并且暴露出硅表面。
19.权利要求10所述的方法,其中在金属沉积之前,该含硅基底是体硅晶片。
20.权利要求10所述的方法,其中在金属沉积之前,该含硅基底是在绝缘体上的硅晶片。
21.权利要求10所述的方法,其中在金属沉积之前,该含硅基底包含多晶硅或者微晶硅。
22.权利要求10所述的方法,其中在金属沉积之前,该含硅基底包含外延生长的硅。
23.权利要求10所述的方法,其中在金属沉积之前,该含硅基底包含在硅上的锗或者在硅上的氧化物上的锗。
24.权利要求10所述的方法,其中将步骤(a)-(c)的产品进一步加工,来生产光电装置。
25.权利要求24所述的方法,其中该光电装置是发光二极管。
26.权利要求10所述的方法,其中将步骤(a)-(c)的产品进一步加工,来生产光元件和/或波导管。
27.权利要求10所述的方法,其中将步骤(a)-(c)的产品进一步加工,来生产光伏或者太阳能电池装置。
28.权利要求10所述的方法,其中将步骤(a)-(c)所产生的图案与在图案化和蚀刻的含硅基底中的电子态进行混合。
29.权利要求10所述的方法,其中可以选择所述的硅,来具有任何期望的晶体取向。
30.权利要求10所述的方法,其进一步包含步骤:使用步骤(a)-(c)所产生的图案,来作为锂离子电池的锂吸收部件。
31.权利要求10所述的方法,其中继续步骤(b)的金属沉积,以使得不存在会使膜的一部分变得与其余部分分开的破裂或者裂缝。
32.一种锂离子吸收材料,其包含硅纳米线,该硅纳米线是通过硅的金属增强的蚀刻来制成的。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US4457308P | 2008-04-14 | 2008-04-14 | |
US61/044573 | 2008-04-14 | ||
US14108208P | 2008-12-29 | 2008-12-29 | |
US61/141082 | 2008-12-29 | ||
PCT/US2009/040552 WO2009137241A2 (en) | 2008-04-14 | 2009-04-14 | Process for fabricating nanowire arrays |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102084467A true CN102084467A (zh) | 2011-06-01 |
Family
ID=41163224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009801220858A Pending CN102084467A (zh) | 2008-04-14 | 2009-04-14 | 制作纳米线阵列的方法 |
Country Status (5)
Country | Link |
---|---|
US (8) | US8143143B2 (zh) |
EP (1) | EP2277045A4 (zh) |
JP (1) | JP2011523902A (zh) |
CN (1) | CN102084467A (zh) |
WO (1) | WO2009137241A2 (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103147125A (zh) * | 2013-02-27 | 2013-06-12 | 中国科学院半导体研究所 | 廉价粉末多晶硅基纳米线的制备方法 |
CN103526299A (zh) * | 2013-10-21 | 2014-01-22 | 北京师范大学 | 一种制备硅纳米结构材料的方法 |
CN103553046A (zh) * | 2013-10-15 | 2014-02-05 | 北京师范大学 | 一种制备多功能硅微纳米结构材料的方法 |
CN103875100A (zh) * | 2011-10-17 | 2014-06-18 | 日产自动车株式会社 | 电气器件用负极活性物质 |
CN104577077A (zh) * | 2013-10-16 | 2015-04-29 | 国家纳米科学中心 | 硅-碳纳米复合薄膜及其制备方法和应用以及锂离子电池 |
CN107777659A (zh) * | 2017-09-28 | 2018-03-09 | 广东工业大学 | 金属折点纳米线阵列的制备方法及其金属折点纳米线阵列 |
CN108459054A (zh) * | 2017-02-20 | 2018-08-28 | 天津大学 | 一种硅纳米线—聚吡咯复合材料的制备方法 |
CN110010864A (zh) * | 2019-03-21 | 2019-07-12 | 中国科学院半导体研究所 | 硅-石墨烯电池负极材料及其制备方法、锂电池 |
CN115430450A (zh) * | 2022-08-30 | 2022-12-06 | 上海交通大学 | Rh纳米颗粒修饰III族氮氧化物Si催化剂的制备方法及其应用 |
Families Citing this family (73)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2277045A4 (en) | 2008-04-14 | 2012-09-19 | Bandgap Eng Inc | METHOD FOR PRODUCING NANODRAHT ARRANGEMENTS |
US8546742B2 (en) | 2009-06-04 | 2013-10-01 | Zena Technologies, Inc. | Array of nanowires in a single cavity with anti-reflective coating on substrate |
US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
US9515218B2 (en) | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
US8507840B2 (en) | 2010-12-21 | 2013-08-13 | Zena Technologies, Inc. | Vertically structured passive pixel arrays and methods for fabricating the same |
US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
US8229255B2 (en) | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
US8519379B2 (en) | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
US8890271B2 (en) | 2010-06-30 | 2014-11-18 | Zena Technologies, Inc. | Silicon nitride light pipes for image sensors |
US8835831B2 (en) | 2010-06-22 | 2014-09-16 | Zena Technologies, Inc. | Polarized light detecting device and fabrication methods of the same |
US8384007B2 (en) | 2009-10-07 | 2013-02-26 | Zena Technologies, Inc. | Nano wire based passive pixel image sensor |
US8269985B2 (en) | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
US9478685B2 (en) | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
US8889455B2 (en) | 2009-12-08 | 2014-11-18 | Zena Technologies, Inc. | Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor |
US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
US9299866B2 (en) | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
US8735797B2 (en) | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
US9082673B2 (en) | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
US8791470B2 (en) | 2009-10-05 | 2014-07-29 | Zena Technologies, Inc. | Nano structured LEDs |
US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
WO2010042209A1 (en) * | 2008-10-09 | 2010-04-15 | Bandgap Engineering, Inc. | Process for structuring silicon |
US20140370380A9 (en) * | 2009-05-07 | 2014-12-18 | Yi Cui | Core-shell high capacity nanowires for battery electrodes |
US11996550B2 (en) | 2009-05-07 | 2024-05-28 | Amprius Technologies, Inc. | Template electrode structures for depositing active materials |
US20100285358A1 (en) * | 2009-05-07 | 2010-11-11 | Amprius, Inc. | Electrode Including Nanostructures for Rechargeable Cells |
US8450012B2 (en) | 2009-05-27 | 2013-05-28 | Amprius, Inc. | Interconnected hollow nanostructures containing high capacity active materials for use in rechargeable batteries |
WO2011017173A2 (en) * | 2009-07-28 | 2011-02-10 | Bandgap Engineering Inc. | Silicon nanowire arrays on an organic conductor |
JP5581716B2 (ja) * | 2010-02-05 | 2014-09-03 | ソニー株式会社 | リチウムイオン二次電池用負極、リチウムイオン二次電池、電動工具、電気自動車および電力貯蔵システム |
US9172088B2 (en) | 2010-05-24 | 2015-10-27 | Amprius, Inc. | Multidimensional electrochemically active structures for battery electrodes |
US9780365B2 (en) | 2010-03-03 | 2017-10-03 | Amprius, Inc. | High-capacity electrodes with active material coatings on multilayered nanostructured templates |
CN102844917B (zh) | 2010-03-03 | 2015-11-25 | 安普雷斯股份有限公司 | 用于沉积活性材料的模板电极结构 |
US8940610B2 (en) * | 2010-04-16 | 2015-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Electrode for energy storage device and method for manufacturing the same |
US9142833B2 (en) * | 2010-06-07 | 2015-09-22 | The Regents Of The University Of California | Lithium ion batteries based on nanoporous silicon |
TW201200465A (en) * | 2010-06-29 | 2012-01-01 | Univ Nat Central | Nano/micro-structure and fabrication method thereof |
US20120015247A1 (en) * | 2010-07-14 | 2012-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Silicon crystal body and power storage device using the silicon crystal body |
CN101973517A (zh) * | 2010-10-21 | 2011-02-16 | 东华大学 | 一种低掺杂多孔硅纳米线阵列的制备方法 |
US8945794B2 (en) * | 2010-11-12 | 2015-02-03 | Faris Modawar | Process for forming silver films on silicon |
WO2012067943A1 (en) | 2010-11-15 | 2012-05-24 | Amprius, Inc. | Electrolytes for rechargeable batteries |
US9240328B2 (en) * | 2010-11-19 | 2016-01-19 | Alphabet Energy, Inc. | Arrays of long nanostructures in semiconductor materials and methods thereof |
US8736011B2 (en) | 2010-12-03 | 2014-05-27 | Alphabet Energy, Inc. | Low thermal conductivity matrices with embedded nanostructures and methods thereof |
US20120181502A1 (en) * | 2011-01-18 | 2012-07-19 | Bandgap Engineering, Inc. | Method of electrically contacting nanowire arrays |
EP2727175A4 (en) | 2011-07-01 | 2015-07-01 | Amprius Inc | ELECTRODE TEMPLATE STRUCTURES WITH IMPROVED ADHESION PROPERTIES |
JP6025284B2 (ja) | 2011-08-19 | 2016-11-16 | 株式会社半導体エネルギー研究所 | 蓄電装置用の電極及び蓄電装置 |
CN104145323A (zh) | 2011-09-19 | 2014-11-12 | 班德加普工程有限公司 | 与纳米结构区域的电接触 |
GB201122315D0 (en) | 2011-12-23 | 2012-02-01 | Nexeon Ltd | Etched silicon structures, method of forming etched silicon structures and uses thereof |
WO2013123066A1 (en) | 2012-02-14 | 2013-08-22 | Bandgap Engineering, Inc. | Screen printing electrical contacts to nanowire areas |
KR101327744B1 (ko) | 2012-06-22 | 2013-11-11 | 원광대학교산학협력단 | 고효율의 태양전지 제조방법 |
CN102817084B (zh) * | 2012-08-03 | 2015-06-10 | 华北电力大学 | 一种硅纳米线双层阵列结构材料的制备方法 |
US20150380740A1 (en) * | 2012-12-28 | 2015-12-31 | Advanced Silicon Group, Inc. | Metal backed nanowire arrays |
US9251934B2 (en) | 2013-01-11 | 2016-02-02 | Infineon Technologies Ag | Method for manufacturing a plurality of nanowires |
CN103594535A (zh) * | 2013-01-14 | 2014-02-19 | 江苏大学 | 一种硅纳米线量子阱太阳能电池及其制备方法 |
US20150380583A1 (en) | 2013-01-30 | 2015-12-31 | Advanced Silicon Group, Inc. | Necklaces of silicon nanowires |
US9099481B2 (en) | 2013-03-15 | 2015-08-04 | Semiconductor Components Industries, Llc | Methods of laser marking semiconductor substrates |
US9449855B2 (en) * | 2013-07-12 | 2016-09-20 | Advanced Silicon Group, Inc. | Double-etch nanowire process |
WO2015023760A1 (en) | 2013-08-14 | 2015-02-19 | Board Of Regents, The University Of Texas System | Methods of fabricating silicon nanowires and devices containing silicon nanowires |
WO2015038340A1 (en) * | 2013-09-10 | 2015-03-19 | Bandgap Engineering, Inc. | Metal assisted etch combined with regularizing etch |
CA2829605C (en) | 2013-10-07 | 2016-06-14 | Springpower International Incorporated | A method for mass production of silicon nanowires and/or nanobelts, and lithium batteries and anodes using the silicon nanowires and/or nanobelts |
US9691849B2 (en) | 2014-04-10 | 2017-06-27 | Alphabet Energy, Inc. | Ultra-long silicon nanostructures, and methods of forming and transferring the same |
US9923201B2 (en) | 2014-05-12 | 2018-03-20 | Amprius, Inc. | Structurally controlled deposition of silicon onto nanowires |
DE102014107379A1 (de) * | 2014-05-26 | 2015-11-26 | Ernst-Abbe-Fachhochschule Jena | Halbleiterbauelement und Verfahren zu seiner Herstellung |
WO2015191520A1 (en) | 2014-06-09 | 2015-12-17 | Natcore Technology, Inc. | Emitter diffusion conditions for black silicon |
US20160002096A1 (en) | 2014-07-02 | 2016-01-07 | Corning Incorporated | Silicon and silica nanostructures and method of making silicon and silica nanostructures |
WO2016063281A1 (en) | 2014-10-21 | 2016-04-28 | Ramot At Tel-Aviv University Ltd | High-capacity silicon nanowire based anode for lithium-ion batteries |
WO2016205610A1 (en) * | 2015-06-18 | 2016-12-22 | The University Of Florida Research Foundation, Inc. | 2d tunable nanosphere lithography of nanostructures |
CN104961094A (zh) * | 2015-07-21 | 2015-10-07 | 中国科学院上海微系统与信息技术研究所 | 基于mems工艺的细胞微阵列结构及其制备方法 |
US10507466B2 (en) * | 2016-04-27 | 2019-12-17 | International Business Machines Corporation | Metal assisted chemical etching for fabricating high aspect ratio and straight silicon nanopillar arrays for sorting applications |
WO2018044900A1 (en) * | 2016-08-30 | 2018-03-08 | The Regents Of The University Of California | Ultrafine nanowires as highly efficient electrocatalysts |
EP3545575A4 (en) * | 2016-11-28 | 2020-08-05 | Sila Nanotechnologies Inc. | HIGH CAPACITIVE BATTERY ELECTRODES WITH IMPROVED BINDERS, CONSTRUCTION AND PERFORMANCE |
US11585807B2 (en) | 2019-02-20 | 2023-02-21 | Advanced Silicon Group, Inc. | Nanotextured silicon biosensors |
CN110064347B (zh) * | 2019-05-23 | 2021-09-07 | 中国石油大学(华东) | 基于仿生维管束微结构的多孔气凝胶及其制备方法和应用 |
WO2023220001A1 (en) * | 2022-05-13 | 2023-11-16 | Carnegie Mellon University | Growth of vertically-aligned nanowires on conductive surfaces |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1855552A (zh) * | 2005-03-16 | 2006-11-01 | 通用电气公司 | 高效的无机纳米杆增强的光电装置 |
CN101010780A (zh) * | 2004-04-30 | 2007-08-01 | 纳米系统公司 | 纳米线生长和获取的体系和方法 |
Family Cites Families (135)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2639841C3 (de) | 1976-09-03 | 1980-10-23 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Solarzelle und Verfahren zu ihrer Herstellung |
DE3016498A1 (de) | 1980-04-29 | 1981-11-05 | Siemens AG, 1000 Berlin und 8000 München | Lichtempfindliche halbleiterbauelemente |
DE3308269A1 (de) | 1983-03-09 | 1984-09-13 | Licentia Patent-Verwaltungs-Gmbh | Solarzelle |
US4589191A (en) | 1983-10-20 | 1986-05-20 | Unisearch Limited | Manufacture of high efficiency solar cells |
AU570309B2 (en) | 1984-03-26 | 1988-03-10 | Unisearch Limited | Buried contact solar cell |
US4938568A (en) | 1988-01-05 | 1990-07-03 | Hughes Aircraft Company | Polymer dispersed liquid crystal film devices, and method of forming the same |
US5034068A (en) | 1990-02-23 | 1991-07-23 | Spectrolab, Inc. | Photovoltaic cell having structurally supporting open conductive back electrode structure, and method of fabricating the cell |
US5178685A (en) | 1991-06-11 | 1993-01-12 | Mobil Solar Energy Corporation | Method for forming solar cell contacts and interconnecting solar cells |
US5221854A (en) | 1991-11-18 | 1993-06-22 | United Solar Systems Corporation | Protective layer for the back reflector of a photovoltaic device |
US5356488A (en) | 1991-12-27 | 1994-10-18 | Rudolf Hezel | Solar cell and method for its manufacture |
US5391235A (en) | 1992-03-31 | 1995-02-21 | Canon Kabushiki Kaisha | Solar cell module and method of manufacturing the same |
JP2983787B2 (ja) | 1993-01-05 | 1999-11-29 | シャープ株式会社 | 表示装置の駆動回路 |
EP0892444B1 (en) * | 1993-11-02 | 2004-04-21 | Matsushita Electric Industrial Co., Ltd | Semiconductor device comprising an aggregate of semiconductor micro-needles |
JP3563860B2 (ja) | 1996-02-23 | 2004-09-08 | シャープ株式会社 | 重合性化合物およびそれを用いた液晶表示素子 |
US5841931A (en) | 1996-11-26 | 1998-11-24 | Massachusetts Institute Of Technology | Methods of forming polycrystalline semiconductor waveguides for optoelectronic integrated circuits, and devices formed thereby |
DE19811878C2 (de) | 1998-03-18 | 2002-09-19 | Siemens Solar Gmbh | Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen |
US6063695A (en) * | 1998-11-16 | 2000-05-16 | Taiwan Semiconductor Manufacturing Company | Simplified process for the fabrication of deep clear laser marks using a photoresist mask |
JP2000162599A (ja) | 1998-11-30 | 2000-06-16 | Sanyo Electric Co Ltd | 液晶表示装置 |
JP4162313B2 (ja) | 1998-12-28 | 2008-10-08 | シャープ株式会社 | 液晶表示装置 |
JP3407865B2 (ja) | 1999-02-03 | 2003-05-19 | シャープ株式会社 | 液晶表示装置 |
JP2000250045A (ja) | 1999-02-26 | 2000-09-14 | Sharp Corp | 液晶表示装置およびその製造方法 |
JP3619053B2 (ja) | 1999-05-21 | 2005-02-09 | キヤノン株式会社 | 光電変換装置の製造方法 |
JP2001033815A (ja) | 1999-07-19 | 2001-02-09 | Matsushita Electric Ind Co Ltd | 液晶パネル |
US6649824B1 (en) | 1999-09-22 | 2003-11-18 | Canon Kabushiki Kaisha | Photoelectric conversion device and method of production thereof |
JP3879326B2 (ja) | 1999-09-30 | 2007-02-14 | セイコーエプソン株式会社 | 液晶装置の製造方法 |
JP4606541B2 (ja) | 2000-03-23 | 2011-01-05 | シャープ株式会社 | 液晶表示装置 |
US6334939B1 (en) * | 2000-06-15 | 2002-01-01 | The University Of North Carolina At Chapel Hill | Nanostructure-based high energy capacity material |
GB0114896D0 (en) | 2001-06-19 | 2001-08-08 | Bp Solar Ltd | Process for manufacturing a solar cell |
JP4801848B2 (ja) | 2001-06-22 | 2011-10-26 | 東芝モバイルディスプレイ株式会社 | 液晶表示装置 |
US6916740B2 (en) * | 2001-06-25 | 2005-07-12 | Hewlett-Packard Development Company, L.P. | Method of forming smooth polycrystalline silicon electrodes for molecular electronic devices |
JP2003031824A (ja) | 2001-07-13 | 2003-01-31 | Sharp Corp | 太陽電池モジュール |
US7113241B2 (en) | 2001-08-31 | 2006-09-26 | Sharp Kabushiki Kaisha | Liquid crystal display and method of manufacturing the same |
JP4714187B2 (ja) | 2001-10-12 | 2011-06-29 | シャープ株式会社 | 液晶表示装置 |
DE10150199A1 (de) | 2001-10-12 | 2003-04-24 | Wolfgang E Schultz | Verfahren und Schaltung zur Erkennung der Ankerlage eines Elektromagneten |
US20030178057A1 (en) | 2001-10-24 | 2003-09-25 | Shuichi Fujii | Solar cell, manufacturing method thereof and electrode material |
US6872645B2 (en) * | 2002-04-02 | 2005-03-29 | Nanosys, Inc. | Methods of positioning and/or orienting nanostructures |
US7566680B2 (en) * | 2002-05-15 | 2009-07-28 | Sud-Chemie Inc. | High surface area iron material prepared from a low surface area iron metal precursor |
JP4342200B2 (ja) | 2002-06-06 | 2009-10-14 | シャープ株式会社 | 液晶表示装置 |
JP4248306B2 (ja) | 2002-06-17 | 2009-04-02 | シャープ株式会社 | 液晶表示装置 |
WO2004068548A2 (en) | 2003-01-21 | 2004-08-12 | Rensselaer Polytechnic Institute | Three dimensional radiation conversion semiconductor devices |
US6984579B2 (en) | 2003-02-27 | 2006-01-10 | Applied Materials, Inc. | Ultra low k plasma CVD nanotube/spin-on dielectrics with improved properties for advanced nanoelectronic device fabrication |
US7279832B2 (en) * | 2003-04-01 | 2007-10-09 | Innovalight, Inc. | Phosphor materials and illumination devices made therefrom |
US7265037B2 (en) | 2003-06-20 | 2007-09-04 | The Regents Of The University Of California | Nanowire array and nanowire solar cells and methods for forming the same |
CN1224111C (zh) | 2003-07-04 | 2005-10-19 | 清华大学 | 硅纳米线阵列太阳能转换装置 |
JP4434658B2 (ja) | 2003-08-08 | 2010-03-17 | キヤノン株式会社 | 構造体及びその製造方法 |
US6986838B2 (en) | 2003-08-14 | 2006-01-17 | Johnson Research & Development Co., Inc. | Nanomachined and micromachined electrodes for electrochemical devices |
KR100601090B1 (ko) | 2003-10-14 | 2006-07-14 | 주식회사 엘지화학 | 다공성 템플레이트를 이용하여 제조된 고표면적 전극시스템 및 이를 이용한 전기 소자 |
US20050167655A1 (en) | 2004-01-29 | 2005-08-04 | International Business Machines Corporation | Vertical nanotube semiconductor device structures and methods of forming the same |
WO2005094231A2 (en) | 2004-03-19 | 2005-10-13 | The Regents Of The University Of California | Methods for fabrication of positional and compositionally controlled nanostructures on substrate |
FR2880198B1 (fr) * | 2004-12-23 | 2007-07-06 | Commissariat Energie Atomique | Electrode nanostructuree pour microbatterie |
JP4523848B2 (ja) | 2005-02-04 | 2010-08-11 | シャープ株式会社 | 液晶表示装置 |
US20060216603A1 (en) * | 2005-03-26 | 2006-09-28 | Enable Ipc | Lithium-ion rechargeable battery based on nanostructures |
US7618838B2 (en) | 2005-04-25 | 2009-11-17 | The Research Foundation Of State University Of New York | Hybrid solar cells based on nanostructured semiconductors and organic materials |
CN1312034C (zh) | 2005-05-20 | 2007-04-25 | 清华大学 | 单一轴向排布的单晶硅纳米线阵列制备方法 |
US7824579B2 (en) | 2005-06-07 | 2010-11-02 | E. I. Du Pont De Nemours And Company | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
JP4841628B2 (ja) | 2005-06-25 | 2011-12-21 | ソウル オプト デバイス カンパニー リミテッド | ナノ構造体及びそれを採用した発光ダイオードとその製造方法 |
JP4525500B2 (ja) | 2005-07-14 | 2010-08-18 | パナソニック電工株式会社 | 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法 |
US7589880B2 (en) | 2005-08-24 | 2009-09-15 | The Trustees Of Boston College | Apparatus and methods for manipulating light using nanoscale cometal structures |
DE102005041877A1 (de) | 2005-09-02 | 2007-03-08 | Koynov, Svetoslav, Dr. | Verfahren zur Herstellung siliziumhaltiger Oberflächen und optoelektronische Bauelemente |
US20070190542A1 (en) * | 2005-10-03 | 2007-08-16 | Ling Xinsheng S | Hybridization assisted nanopore sequencing |
EP1772773B1 (en) * | 2005-10-06 | 2011-06-29 | STMicroelectronics Srl | Method for realizing a multispacer structure, use of said structure as a mould and method for producing circuital architectures using said mould |
KR100759556B1 (ko) * | 2005-10-17 | 2007-09-18 | 삼성에스디아이 주식회사 | 음극 활물질, 그 제조 방법 및 이를 채용한 음극과 리튬전지 |
US8314327B2 (en) | 2005-11-06 | 2012-11-20 | Banpil Photonics, Inc. | Photovoltaic cells based on nano or micro-scale structures |
WO2007083362A1 (ja) | 2006-01-18 | 2007-07-26 | Fujitsu Limited | 抵抗記憶素子及びその製造方法 |
EP1974077A2 (en) | 2006-01-20 | 2008-10-01 | BP Corporation North America Inc. | Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics |
JP2007194485A (ja) | 2006-01-20 | 2007-08-02 | Osaka Univ | 太陽電池用シリコン基板の製造方法 |
WO2008063209A2 (en) | 2006-02-27 | 2008-05-29 | Los Alamos National Security, Llc | Optoelectronic devices utilizing materials having enhanced electronic transitions |
US7709341B2 (en) | 2006-06-02 | 2010-05-04 | Micron Technology, Inc. | Methods of shaping vertical single crystal silicon walls and resulting structures |
WO2008057629A2 (en) | 2006-06-05 | 2008-05-15 | The Board Of Trustees Of The University Of Illinois | Photovoltaic and photosensing devices based on arrays of aligned nanostructures |
US8866007B2 (en) | 2006-06-07 | 2014-10-21 | California Institute Of Technology | Plasmonic photovoltaics |
US20080038467A1 (en) * | 2006-08-11 | 2008-02-14 | Eastman Kodak Company | Nanostructured pattern method of manufacture |
GB2442768A (en) | 2006-10-11 | 2008-04-16 | Sharp Kk | A method of encapsulating low dimensional structures |
US7659631B2 (en) * | 2006-10-12 | 2010-02-09 | Hewlett-Packard Development Company, L.P. | Interconnection between different circuit types |
US7776760B2 (en) | 2006-11-07 | 2010-08-17 | Nanosys, Inc. | Systems and methods for nanowire growth |
CN100426534C (zh) | 2006-12-31 | 2008-10-15 | 高文秀 | 硅片表面金属电极制作方法 |
US7977568B2 (en) | 2007-01-11 | 2011-07-12 | General Electric Company | Multilayered film-nanowire composite, bifacial, and tandem solar cells |
KR101484737B1 (ko) | 2007-02-15 | 2015-01-22 | 메사추세츠 인스티튜트 오브 테크놀로지 | 텍스쳐 표면을 갖는 태양 전지 |
US7608530B2 (en) | 2007-03-01 | 2009-10-27 | Hewlett-Packard Development Company, L.P. | Hetero-crystalline structure and method of making same |
KR100809248B1 (ko) | 2007-03-14 | 2008-02-29 | 삼성전기주식회사 | 반도체 이종구조 나노선을 이용한 광기전력 소자 및 그제조방법 |
WO2008124154A2 (en) | 2007-04-09 | 2008-10-16 | Amberwave Systems Corporation | Photovoltaics on silicon |
JP5112761B2 (ja) | 2007-06-26 | 2013-01-09 | パナソニック株式会社 | 化合物半導体素子およびそれを用いる照明装置ならびに化合物半導体素子の製造方法 |
KR20100032900A (ko) | 2007-07-18 | 2010-03-26 | 아이엠이씨 | 에미터 구조체를 제조하는 방법 및 그로부터 생성되는 에미터 구조체들 |
US7816031B2 (en) | 2007-08-10 | 2010-10-19 | The Board Of Trustees Of The Leland Stanford Junior University | Nanowire battery methods and arrangements |
EP2182556B1 (en) | 2007-10-24 | 2013-01-16 | Mitsubishi Electric Corporation | Process for manufacturing solar cell |
JP5286046B2 (ja) | 2007-11-30 | 2013-09-11 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
JP2009151204A (ja) | 2007-12-21 | 2009-07-09 | Sharp Corp | 液晶表示装置 |
US8106289B2 (en) | 2007-12-31 | 2012-01-31 | Banpil Photonics, Inc. | Hybrid photovoltaic device |
US8592675B2 (en) | 2008-02-29 | 2013-11-26 | International Business Machines Corporation | Photovoltaic devices with enhanced efficiencies using high-aspect-ratio nanostructures |
US8551558B2 (en) | 2008-02-29 | 2013-10-08 | International Business Machines Corporation | Techniques for enhancing efficiency of photovoltaic devices using high-aspect-ratio nanostructures |
US7704866B2 (en) | 2008-03-18 | 2010-04-27 | Innovalight, Inc. | Methods for forming composite nanoparticle-metal metallization contacts on a substrate |
US20090236317A1 (en) | 2008-03-21 | 2009-09-24 | Midwest Research Institute | Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions |
US8075792B1 (en) | 2008-03-21 | 2011-12-13 | Alliance For Sustainable Energy, Llc | Nanoparticle-based etching of silicon surfaces |
US8273591B2 (en) | 2008-03-25 | 2012-09-25 | International Business Machines Corporation | Super lattice/quantum well nanowires |
US20120132266A1 (en) | 2008-04-02 | 2012-05-31 | Korea Institute Of Machinery & Materials | Photoelectric conversion device using semiconductor nanomaterial |
WO2010008425A1 (en) | 2008-04-03 | 2010-01-21 | Bandgap Engineering, Inc. | Designing the host of nano-structured optoelectronic devices to improve performance |
US8157948B2 (en) | 2008-04-08 | 2012-04-17 | Los Alamos National Security, Llc | Method of fabricating metal- and ceramic- matrix composites and functionalized textiles |
EP2277045A4 (en) | 2008-04-14 | 2012-09-19 | Bandgap Eng Inc | METHOD FOR PRODUCING NANODRAHT ARRANGEMENTS |
US8491718B2 (en) | 2008-05-28 | 2013-07-23 | Karin Chaudhari | Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon |
JP2009290105A (ja) | 2008-05-30 | 2009-12-10 | Sharp Corp | 太陽電池、太陽電池の製造方法および太陽電池モジュール |
US20100045160A1 (en) | 2008-08-20 | 2010-02-25 | Manhattan Technologies Ltd. | Multibeam doubly convergent electron gun |
US8889455B2 (en) | 2009-12-08 | 2014-11-18 | Zena Technologies, Inc. | Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor |
JP2010087105A (ja) | 2008-09-30 | 2010-04-15 | Fujifilm Corp | 太陽電池 |
WO2010042209A1 (en) | 2008-10-09 | 2010-04-15 | Bandgap Engineering, Inc. | Process for structuring silicon |
US8450599B2 (en) | 2008-11-14 | 2013-05-28 | Bandgap Engineering, Inc. | Nanostructured devices |
CN101540348B (zh) | 2008-12-12 | 2011-03-16 | 北京师范大学 | 一种多用途硅微纳米结构制备技术 |
CN101840953B (zh) | 2009-03-18 | 2011-10-12 | 中国科学院微电子研究所 | 一种制备表面混合调制晶硅太阳能电池的方法 |
CN101882643B (zh) | 2009-05-06 | 2012-08-22 | 中国科学院微电子研究所 | 一种制作晶硅高效太阳能电池的方法 |
US8048814B2 (en) | 2009-05-19 | 2011-11-01 | Innovalight, Inc. | Methods and apparatus for aligning a set of patterns on a silicon substrate |
KR101033028B1 (ko) | 2009-06-25 | 2011-05-09 | 한양대학교 산학협력단 | 태양 전지 및 그 제조 방법 |
WO2011017173A2 (en) | 2009-07-28 | 2011-02-10 | Bandgap Engineering Inc. | Silicon nanowire arrays on an organic conductor |
FR2949278B1 (fr) | 2009-08-18 | 2012-11-02 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif d'emission de lumiere a base de diodes electroluminescentes |
KR101076355B1 (ko) | 2009-09-07 | 2011-10-25 | 주식회사 신성홀딩스 | 태양 전지 및 그 제조 방법 |
DE102009043975B4 (de) | 2009-09-10 | 2012-09-13 | Q-Cells Se | Solarzelle |
US8809093B2 (en) | 2009-11-19 | 2014-08-19 | California Institute Of Technology | Methods for fabricating self-aligning semicondutor heterostructures using silicon nanowires |
US20110155229A1 (en) | 2009-12-30 | 2011-06-30 | Du Pont Apollo Ltd. | Solar cell and method for manufacturing the same |
JP2011187901A (ja) | 2010-03-11 | 2011-09-22 | Canon Inc | 半導体デバイスの製造方法 |
CN102201465A (zh) | 2010-03-26 | 2011-09-28 | 北京师范大学 | 硅微纳米结构光伏太阳能电池 |
WO2011143341A2 (en) | 2010-05-11 | 2011-11-17 | Molecular Imprints, Inc. | Backside contact solar cell |
US20110277825A1 (en) | 2010-05-14 | 2011-11-17 | Sierra Solar Power, Inc. | Solar cell with metal grid fabricated by electroplating |
CN102270688A (zh) | 2010-06-01 | 2011-12-07 | 刘爱民 | 一种太阳能电池 |
US8659037B2 (en) | 2010-06-08 | 2014-02-25 | Sundiode Inc. | Nanostructure optoelectronic device with independently controllable junctions |
US8828765B2 (en) | 2010-06-09 | 2014-09-09 | Alliance For Sustainable Energy, Llc | Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces |
US8945794B2 (en) | 2010-11-12 | 2015-02-03 | Faris Modawar | Process for forming silver films on silicon |
US20120181502A1 (en) | 2011-01-18 | 2012-07-19 | Bandgap Engineering, Inc. | Method of electrically contacting nanowire arrays |
EP2684210A4 (en) | 2011-03-08 | 2014-08-20 | Alliance Sustainable Energy | EFFICIENT BLACK SILICON PHOTOVOLTAIC DEVICES HAVING A BETTER RESPONSE TO BLUE |
CN102227002B (zh) | 2011-05-31 | 2013-01-09 | 上海交通大学 | 多晶硅纳米线太阳能电池及其制备方法 |
KR20130030122A (ko) | 2011-09-16 | 2013-03-26 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
CN104145323A (zh) | 2011-09-19 | 2014-11-12 | 班德加普工程有限公司 | 与纳米结构区域的电接触 |
WO2013123066A1 (en) | 2012-02-14 | 2013-08-22 | Bandgap Engineering, Inc. | Screen printing electrical contacts to nanowire areas |
US20150380740A1 (en) | 2012-12-28 | 2015-12-31 | Advanced Silicon Group, Inc. | Metal backed nanowire arrays |
US20150380583A1 (en) | 2013-01-30 | 2015-12-31 | Advanced Silicon Group, Inc. | Necklaces of silicon nanowires |
US9449855B2 (en) | 2013-07-12 | 2016-09-20 | Advanced Silicon Group, Inc. | Double-etch nanowire process |
WO2015038340A1 (en) | 2013-09-10 | 2015-03-19 | Bandgap Engineering, Inc. | Metal assisted etch combined with regularizing etch |
US20170052182A1 (en) | 2015-08-21 | 2017-02-23 | University Of Iowa Research Foundation | Optoelectronic cartridge for cancer biomarker detection utilizing silicon nanowire arrays |
US11585807B2 (en) | 2019-02-20 | 2023-02-21 | Advanced Silicon Group, Inc. | Nanotextured silicon biosensors |
-
2009
- 2009-04-14 EP EP09743228A patent/EP2277045A4/en not_active Withdrawn
- 2009-04-14 CN CN2009801220858A patent/CN102084467A/zh active Pending
- 2009-04-14 WO PCT/US2009/040552 patent/WO2009137241A2/en active Application Filing
- 2009-04-14 JP JP2011505144A patent/JP2011523902A/ja active Pending
- 2009-04-14 US US12/423,623 patent/US8143143B2/en not_active Expired - Fee Related
-
2011
- 2011-11-28 US US13/305,649 patent/US8791449B2/en active Active
-
2014
- 2014-07-28 US US14/444,361 patent/US9202868B2/en active Active
-
2015
- 2015-10-27 US US14/924,273 patent/US9859366B2/en active Active
-
2017
- 2017-11-29 US US15/826,005 patent/US20180090568A1/en not_active Abandoned
-
2018
- 2018-08-03 US US16/054,457 patent/US10692971B2/en active Active
-
2020
- 2020-05-11 US US16/871,436 patent/US11355584B2/en active Active
-
2022
- 2022-04-27 US US17/660,854 patent/US20220254883A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101010780A (zh) * | 2004-04-30 | 2007-08-01 | 纳米系统公司 | 纳米线生长和获取的体系和方法 |
CN1855552A (zh) * | 2005-03-16 | 2006-11-01 | 通用电气公司 | 高效的无机纳米杆增强的光电装置 |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9979016B2 (en) | 2011-10-17 | 2018-05-22 | Nissan Motor Co., Ltd. | Negative electrode active material for electric device |
CN103875100A (zh) * | 2011-10-17 | 2014-06-18 | 日产自动车株式会社 | 电气器件用负极活性物质 |
CN103147125A (zh) * | 2013-02-27 | 2013-06-12 | 中国科学院半导体研究所 | 廉价粉末多晶硅基纳米线的制备方法 |
CN103553046A (zh) * | 2013-10-15 | 2014-02-05 | 北京师范大学 | 一种制备多功能硅微纳米结构材料的方法 |
CN104577077A (zh) * | 2013-10-16 | 2015-04-29 | 国家纳米科学中心 | 硅-碳纳米复合薄膜及其制备方法和应用以及锂离子电池 |
CN104577077B (zh) * | 2013-10-16 | 2018-03-06 | 国家纳米科学中心 | 硅‑碳纳米复合薄膜及其制备方法和应用以及锂离子电池 |
CN103526299A (zh) * | 2013-10-21 | 2014-01-22 | 北京师范大学 | 一种制备硅纳米结构材料的方法 |
CN108459054A (zh) * | 2017-02-20 | 2018-08-28 | 天津大学 | 一种硅纳米线—聚吡咯复合材料的制备方法 |
CN108459054B (zh) * | 2017-02-20 | 2020-06-19 | 天津大学 | 一种硅纳米线—聚吡咯复合材料的制备方法 |
CN107777659B (zh) * | 2017-09-28 | 2018-08-21 | 广东工业大学 | 金属折点纳米线阵列的制备方法及其金属折点纳米线阵列 |
CN107777659A (zh) * | 2017-09-28 | 2018-03-09 | 广东工业大学 | 金属折点纳米线阵列的制备方法及其金属折点纳米线阵列 |
CN110010864A (zh) * | 2019-03-21 | 2019-07-12 | 中国科学院半导体研究所 | 硅-石墨烯电池负极材料及其制备方法、锂电池 |
CN115430450A (zh) * | 2022-08-30 | 2022-12-06 | 上海交通大学 | Rh纳米颗粒修饰III族氮氧化物Si催化剂的制备方法及其应用 |
CN115430450B (zh) * | 2022-08-30 | 2024-05-14 | 上海交通大学 | Rh纳米颗粒修饰III族氮氧化物Si催化剂的制备方法及其应用 |
Also Published As
Publication number | Publication date |
---|---|
US20180350908A1 (en) | 2018-12-06 |
US20140335412A1 (en) | 2014-11-13 |
WO2009137241A2 (en) | 2009-11-12 |
EP2277045A2 (en) | 2011-01-26 |
US10692971B2 (en) | 2020-06-23 |
US9859366B2 (en) | 2018-01-02 |
EP2277045A4 (en) | 2012-09-19 |
US20220254883A1 (en) | 2022-08-11 |
US20180090568A1 (en) | 2018-03-29 |
US8143143B2 (en) | 2012-03-27 |
WO2009137241A9 (en) | 2010-04-08 |
US11355584B2 (en) | 2022-06-07 |
US9202868B2 (en) | 2015-12-01 |
US20090256134A1 (en) | 2009-10-15 |
US20200273950A1 (en) | 2020-08-27 |
WO2009137241A3 (en) | 2010-01-21 |
JP2011523902A (ja) | 2011-08-25 |
US20160049471A1 (en) | 2016-02-18 |
US8791449B2 (en) | 2014-07-29 |
US20120301785A1 (en) | 2012-11-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102084467A (zh) | 制作纳米线阵列的方法 | |
CN102282679B (zh) | 纳米结构器件 | |
Qu et al. | Porous silicon nanowires | |
US9099583B2 (en) | Nanowire device with alumina passivation layer and methods of making same | |
US10079322B2 (en) | Necklaces of silicon nanowires | |
US20200220033A1 (en) | Metal-assisted etch combined with regularizing etch | |
Megouda et al. | Au-assisted electroless etching of silicon in aqueous HF/H2O2 solution | |
US9449855B2 (en) | Double-etch nanowire process | |
Zhao et al. | Morphology control of c-Si via facile copper-assisted chemical etching: Managements on etch end-points | |
Lee et al. | Metal-assisted chemical etching of Ge surface and its effect on photovoltaic devices | |
Kismann et al. | Ordered arrays of Si nanopillars with alternating diameters fabricated by nanosphere lithography and metal-assisted chemical etching | |
US8945794B2 (en) | Process for forming silver films on silicon | |
US20170125519A1 (en) | Process for fabricating vertically-aligned gallium arsenide semiconductor nanowire array of large area | |
CN102650069B (zh) | 一种制备大尺寸硅孔阵列的方法 | |
Razak et al. | High-Aspect-Ratio Silicon Nanostructures on N-type Silicon Wafer Using Metal-Assisted Chemical Etching (MACE) Technique | |
Razak et al. | Create High-Aspect-Ratio Silicon Nanostructures Using Metal-Assisted Chemical Etching (MACE) Technique | |
Nasir et al. | Investigation near IR absorption in thin crystalline Si wafers with randomly etched nano-pillars | |
Baek et al. | Morphological evolution of silver nanoparticles and its effect on metal-induced chemical etching of silicon | |
Nichkalo et al. | Morphology of Nanowire Arrays Produced by Metal-Assisted Chemical Etching on Si Wafers of Different Types: Comparative Analysis | |
Liu et al. | Effect of etching temperature on the growth of silicon nanowires | |
Benoit-Moez et al. | Formation of Si Nanowire Arrays by Metal-Assisted Chemical Etching | |
Benoit et al. | Silicon nanowires: condition of synthesis and size selection | |
Mohseni et al. | III-As pillar arrays by metal-assisted chemical etching for photonic applications |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1158821 Country of ref document: HK |
|
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110601 |
|
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1158821 Country of ref document: HK |