CN101840953B - 一种制备表面混合调制晶硅太阳能电池的方法 - Google Patents
一种制备表面混合调制晶硅太阳能电池的方法 Download PDFInfo
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- CN101840953B CN101840953B CN2009100800542A CN200910080054A CN101840953B CN 101840953 B CN101840953 B CN 101840953B CN 2009100800542 A CN2009100800542 A CN 2009100800542A CN 200910080054 A CN200910080054 A CN 200910080054A CN 101840953 B CN101840953 B CN 101840953B
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- crystal silicon
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 132
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 132
- 239000010703 silicon Substances 0.000 claims abstract description 132
- 239000013078 crystal Substances 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000002159 nanocrystal Substances 0.000 claims abstract description 51
- 238000000137 annealing Methods 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 238000009792 diffusion process Methods 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 238000007650 screen-printing Methods 0.000 claims abstract description 14
- 238000007711 solidification Methods 0.000 claims abstract description 7
- 230000008023 solidification Effects 0.000 claims abstract description 7
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 5
- 239000000956 alloy Substances 0.000 claims abstract description 5
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 35
- 238000007639 printing Methods 0.000 claims description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 238000005566 electron beam evaporation Methods 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 230000003667 anti-reflective effect Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000004151 rapid thermal annealing Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 238000005554 pickling Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 10
- 238000011031 large-scale manufacturing process Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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CN2009100800542A CN101840953B (zh) | 2009-03-18 | 2009-03-18 | 一种制备表面混合调制晶硅太阳能电池的方法 |
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CN2009100800542A CN101840953B (zh) | 2009-03-18 | 2009-03-18 | 一种制备表面混合调制晶硅太阳能电池的方法 |
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CN101840953A CN101840953A (zh) | 2010-09-22 |
CN101840953B true CN101840953B (zh) | 2011-10-12 |
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CN2009100800542A Expired - Fee Related CN101840953B (zh) | 2009-03-18 | 2009-03-18 | 一种制备表面混合调制晶硅太阳能电池的方法 |
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009137241A2 (en) | 2008-04-14 | 2009-11-12 | Bandgap Engineering, Inc. | Process for fabricating nanowire arrays |
CN102468363B (zh) * | 2010-11-09 | 2013-07-10 | 浚鑫科技股份有限公司 | 低效太阳能电池处理方法 |
CN102080244B (zh) * | 2010-11-23 | 2013-02-06 | 中国科学院电工研究所 | 一种硅基介质膜的制备方法 |
CN102569497B (zh) * | 2010-12-30 | 2015-02-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 在基板上形成减反射膜的方法、太阳能电池片及制备方法 |
CN102738307A (zh) * | 2012-07-11 | 2012-10-17 | 辽宁朝阳光伏科技有限公司 | 光谱散射共振调制高效晶硅太阳能电池制备方法 |
CN203434164U (zh) * | 2013-08-08 | 2014-02-12 | 上海神舟新能源发展有限公司 | 一种抗pid晶硅太阳能电池 |
CN103928571B (zh) * | 2014-04-18 | 2016-09-07 | 上海师范大学 | 一种半导体金属氧化物纳米晶须/晶硅电池片及其制备方法 |
CN106816491A (zh) * | 2015-12-01 | 2017-06-09 | 韩山师范学院 | 硅基太阳能电池及其制造方法 |
CN105405926B (zh) * | 2015-12-07 | 2018-06-01 | 新奥光伏能源有限公司 | 一种硅异质结太阳能电池、其退火方法及其制备方法 |
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Effective date of registration: 20190715 Address after: 221000 Miaoshan Road Semiconductor Accelerator 7 of Xuzhou Economic and Technological Development Zone, Xuzhou City, Jiangsu Province Patentee after: Xuzhou Zhongke Li Shengxin Energy Technology Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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Effective date of registration: 20211203 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 221000 semiconductor accelerator 7, Miaoshan Road, Xuzhou Economic and Technological Development Zone, Xuzhou City, Jiangsu Province Patentee before: Xuzhou Zhongke Li Shengxin Energy Technology Co.,Ltd. |
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