JP2011515858A - イオン性金属溶液を用いて触媒処理されたシリコン表面の反射防止エッチング - Google Patents
イオン性金属溶液を用いて触媒処理されたシリコン表面の反射防止エッチング Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 178
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 176
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 176
- 239000010703 silicon Substances 0.000 title claims abstract description 176
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 64
- 239000002184 metal Substances 0.000 title claims abstract description 64
- 230000003667 anti-reflective effect Effects 0.000 title description 9
- 238000000034 method Methods 0.000 claims abstract description 120
- 239000003054 catalyst Substances 0.000 claims abstract description 80
- 239000010931 gold Substances 0.000 claims abstract description 50
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052737 gold Inorganic materials 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 34
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000002923 metal particle Substances 0.000 claims abstract description 15
- 238000003756 stirring Methods 0.000 claims abstract description 14
- 239000002253 acid Substances 0.000 claims abstract description 11
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims abstract 2
- 230000003197 catalytic effect Effects 0.000 claims description 34
- 238000002310 reflectometry Methods 0.000 claims description 28
- 239000007800 oxidant agent Substances 0.000 claims description 21
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 20
- 229910052709 silver Inorganic materials 0.000 claims description 20
- 239000004332 silver Substances 0.000 claims description 20
- 230000001590 oxidative effect Effects 0.000 claims description 16
- 239000002105 nanoparticle Substances 0.000 claims description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 238000013019 agitation Methods 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910052723 transition metal Inorganic materials 0.000 claims description 7
- 150000003624 transition metals Chemical class 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
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- 239000000243 solution Substances 0.000 abstract description 203
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- 239000007864 aqueous solution Substances 0.000 abstract description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract description 4
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- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 24
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
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- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Substances [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
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- 241000270728 Alligator Species 0.000 description 1
- DKNPRRRKHAEUMW-UHFFFAOYSA-N Iodine aqueous Chemical compound [K+].I[I-]I DKNPRRRKHAEUMW-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
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- 238000000137 annealing Methods 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
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- 230000031700 light absorption Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000847 optical profilometry Methods 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 235000012771 pancakes Nutrition 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
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- 230000000135 prohibitive effect Effects 0.000 description 1
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- 238000005215 recombination Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
全体を参照により本明細書に組み込まれた、整理番号NREL07−10で分類された「シリコン表面のナノ粒子系エッチング」と題した同時係属中の米国特許出願第12/053372号に関連する。
米国政府は、ユナイテッド ステイツ デパートメント オブ エナジーとミッドウエスト リサーチ インスティチュートの一部門であるナショナル リニューワブル エナジー ラボラトリーとの間で締結した契約書第DE−AC36−99GO10337号に基づき、本発明の権利を有する。
Claims (21)
- シリコン表面をテクスチャ加工する方法であって、
容器内にシリコン表面を有する基板を位置決めし、
前記基板のシリコン表面をカバーするように、触媒溶液、およびエッチング剤とシリコン酸化剤を含む酸化剤−エッチング剤溶液を含む一定量のエッチング溶液を前記容器に充填し、
前記容器内で前記エッチング溶液を撹拌することにより前記シリコン表面をエッチングし、該エッチング中に、前記触媒溶液が複数の金属粒子を供給する方法。 - 前記触媒溶液がHAuCl4を含み、前記金属粒子が金粒子を含む請求項1記載の方法。
- 前記触媒溶液がHAuCl4の希釈溶液を含み、前記金粒子が金ナノ粒子を含む請求項2記載の方法。
- 前記触媒溶液がAgFの希釈溶液を含み、前記金属粒子が銀粒子を含む請求項1記載の方法。
- 前記金属粒子が遷移金属粒子を含み、前記エッチング処理されたシリコン表面が約350〜約1000ナノメートルの波長で約10パーセント未満の反射率となるまで前記エッチングが行われる請求項1記載の方法。
- 前記エッチング剤がHFを含み、前記シリコン酸化剤がH2O2、O3、CO2、K2Cr2O7、CrO3、KIO3、KBrO3、NaNO3、HNO3およびKMnO4からなる群から選択される酸化剤である請求項1記載の方法。
- エッチング時間が、前記エッチングにより約200ナノメートル以上で約300ナノメール未満の深さを有する前記シリコン表面の複数のトンネルが作製されるように選択される請求項1記載の方法。
- 前記エッチング溶液が、実質的に同時に当量の触媒溶液および酸化剤−エッチング剤溶液を供給することによって供給期間中に前記容器内で生成される請求項1記載の方法。
- 前記シリコン表面が単結晶性、多結晶性または非晶質性である請求項1記載の方法。
- 前記シリコン表面がp型ドーピングまたはn型ドーピングを含む請求項1記載の方法。
- シリコン表面の反射率を低下させる方法であって、
シリコン表面を提供し、
前記シリコン表面を、金属を含有する分子源を含む一定量の触媒溶液および一定量の酸化剤−エッチング剤溶液を含む一定量のエッチング溶液中に位置決めし、
前記シリコン表面をエッチングし、エッチング処理されたシリコン表面の反射率を低下させるテクスチャ加工を有するまで前記酸化剤−エッチング剤溶液を撹拌し、
前記エッチング処理されたシリコン表面から前記金属を剥離溶液で除去することを含む方法。 - 前記金属が金、銀、パラジウム、白金、銅、ニッケルおよびコバルトからなる群から選択される金属である請求項10記載の方法。
- 前記触媒溶液がHAuCl4を含み、前記金属が金である請求項10記載の方法。
- 前記触媒溶液がAgFを含み、前記金属が銀である請求項10記載の方法。
- 前記酸化剤−エッチング剤溶液がシリコンの酸化剤およびフッ化水素酸を含むエッチング剤を含む請求項10記載の方法。
- 前記シリコン表面がウエハー上に設けられた結晶シリコンを含み、前記触媒溶液がHAuCl4の希釈溶液を含み、前記撹拌ステップが金ナノ粒子を放出することを含む請求項14記載の方法。
- さらに、前記撹拌ステップ中に、光源を操作し、一定の光量を用いて前記シリコン表面を照射する請求項10記載の方法。
- シリコンウエハーをテクスチャ加工する方法であって、
コンテナ内に前記シリコンウエハーを入れ、
前記コンテナ内に一定量の触媒溶液を供給し、
前記コンテナ内に一定量の酸化剤−エッチング剤溶液を供給し、ここで前記酸化剤−エッチング剤溶液がエッチング剤および酸化剤を含み、前記触媒溶液が前記酸化剤−エッチング剤溶液の存在下において複数の触媒金属粒子を供給する、
前記コンテナ内の前記溶液を撹拌して、前記シリコンウエハーの表面をエッチングし、
前記シリコンウエハーのエッチング処理された表面から前記触媒金属粒子を除去する方法。 - 前記触媒金属粒子が金ナノ粒子を含み、前記触媒溶液が塩化金酸を含み、前記撹拌後のエッチング処理された表面の測定された反射率が約10パーセント未満であり、前記エッチング剤がフッ化水素酸を含む請求項17記載の方法。
- 前記金属粒子が銀ナノ粒子を含み、前記触媒溶液がAgFの希釈溶液を含む請求項17記載の方法。
- 前記触媒溶液の供給と前記酸化剤−エッチング剤溶液の供給が少なくとも部分的に同時に行われる請求項17記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US12/053,445 US20090236317A1 (en) | 2008-03-21 | 2008-03-21 | Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions |
US12/053,445 | 2008-03-21 | ||
PCT/US2009/037776 WO2009117642A2 (en) | 2008-03-21 | 2009-03-20 | Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions |
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EP (1) | EP2255380A4 (ja) |
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CN (1) | CN102007581B (ja) |
WO (1) | WO2009117642A2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013093537A (ja) * | 2011-10-07 | 2013-05-16 | Jet Co Ltd | 太陽電池の製造方法 |
JP2015512566A (ja) * | 2012-03-19 | 2015-04-27 | アライアンス フォー サステイナブル エナジー リミテッド ライアビリティ カンパニー | シリコン表面の銅支援反射防止エッチング |
JP2021044593A (ja) * | 2020-12-22 | 2021-03-18 | 東京エレクトロン株式会社 | 混合装置、混合方法および基板処理システム |
US11724235B2 (en) | 2019-03-13 | 2023-08-15 | Tokyo Electron Limited | Mixing apparatus, mixing method and substrate processing system |
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KR101631043B1 (ko) | 2007-08-21 | 2016-06-24 | 더 리전트 오브 더 유니버시티 오브 캘리포니아 | 고성능 열전 속성을 갖는 나노구조체 |
EP2250446B1 (en) | 2008-01-25 | 2020-02-19 | Alliance for Sustainable Energy, LLC | Indirect evaporative cooler |
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JP5763709B2 (ja) | 2015-08-12 |
WO2009117642A2 (en) | 2009-09-24 |
US20090236317A1 (en) | 2009-09-24 |
WO2009117642A3 (en) | 2009-11-19 |
EP2255380A4 (en) | 2013-10-30 |
CN102007581B (zh) | 2014-03-05 |
CN102007581A (zh) | 2011-04-06 |
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JP2013179348A (ja) | 2013-09-09 |
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