JP2013177696A - 多元系ナノワイヤーの製造方法 - Google Patents
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- 239000002070 nanowire Substances 0.000 title claims abstract description 90
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 49
- 239000011148 porous material Substances 0.000 claims abstract description 21
- 238000009713 electroplating Methods 0.000 claims description 16
- 239000002243 precursor Substances 0.000 claims description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- AALKGALVYCZETF-UHFFFAOYSA-N pentane-1,2,3-triol Chemical compound CCC(O)C(O)CO AALKGALVYCZETF-UHFFFAOYSA-N 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910005793 GeO 2 Inorganic materials 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 238000007747 plating Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 38
- KDSXXMBJKHQCAA-UHFFFAOYSA-N disilver;selenium(2-) Chemical compound [Se-2].[Ag+].[Ag+] KDSXXMBJKHQCAA-UHFFFAOYSA-N 0.000 description 22
- 239000010409 thin film Substances 0.000 description 11
- 230000015654 memory Effects 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GNWCVDGUVZRYLC-UHFFFAOYSA-N [Se].[Ag].[Ag] Chemical compound [Se].[Ag].[Ag] GNWCVDGUVZRYLC-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- -1 chalcogenide compound Chemical class 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/12—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by electrolysis
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/04—Wires; Strips; Foils
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
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- B82—NANOTECHNOLOGY
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Abstract
【解決手段】本発明に係る多元系ナノワイヤーの製造方法は、(a)複数の気孔を有する陽極酸化アルミニウムナノテンプレートを準備するステップと、(b)前記陽極酸化アルミニウムナノテンプレートの一側面上に電極層を形成するステップと、(c)前記陽極酸化アルミニウムナノテンプレートを所定のGe−Sb−Te系溶液に浸漬させ、前記電極層を陰極とする電気めっき法によって、前記陽極酸化アルミニウムナノテンプレートの前記気孔を通じてGe−Sb−Te系ナノワイヤーを成長させるステップと、(d)前記陽極酸化アルミニウムナノテンプレートを除去するステップとを含むことを特徴とする。
【選択図】図4
Description
12 気孔
20 電極層
30 ナノワイヤー
Claims (11)
- 多元系ナノワイヤーの製造方法であって、
(a)複数の気孔を有する陽極酸化アルミニウムナノテンプレートを準備するステップと、
(b)前記陽極酸化アルミニウムナノテンプレートの一側面上に電極層を形成するステップと、
(c)前記陽極酸化アルミニウムナノテンプレートを所定の多元系溶液に浸漬させ、前記陽極酸化アルミニウムナノテンプレートを陰極とする電気めっき法によって、前記陽極酸化アルミニウムナノテンプレートの前記気孔を通じて多元系ナノワイヤーを成長させるステップと、
(d)前記陽極酸化アルミニウムナノテンプレートを除去するステップとを含むことを特徴とする製造方法。 - 請求項1に記載の多元系ナノワイヤーの製造方法であって、
前記気孔の直径が、数十nmないし数百nmであることを特徴とする製造方法。 - 請求項1に記載の多元系ナノワイヤーの製造方法であって、
前記電極層が、金(Au)を含むことを特徴とする製造方法。 - 請求項1に記載の多元系ナノワイヤーの製造方法であって、
前記多元系溶液がAg−Se系溶液であり、Ag−Se系ナノワイヤーが製造されることを特徴とする製造方法。 - 請求項4に記載の多元系ナノワイヤーの製造方法であって、
前記Ag−Se系溶液が、前駆体としてのAg及びSeと、溶媒としての硝酸及びエチルグリセロールとを含むことを特徴とする製造方法。 - 請求項1に記載の多元系ナノワイヤーの製造方法であって、
前記多元系溶液がGe−Sb−Te系溶液であり、Ge−Sb−Te系ナノワイヤーが製造されることを特徴とする製造方法。 - 請求項6に記載の多元系ナノワイヤーの製造方法であって、
前記Ge−Sb−Te系溶液が、前駆体としてのGeO2、SbO2及びTeO2と、溶媒としての塩酸及びエチルグリセロールとを含むことを特徴とする製造方法。 - 請求項1に記載の多元系ナノワイヤーの製造方法であって、
前記(c)ステップにおいて、陽極として白金電極を使用することを特徴とする製造方法。 - 請求項1に記載の多元系ナノワイヤーの製造方法であって、
前記(c)ステップにおいて、前記多元系溶液中の前駆体の混合比率及び前記電気めっき過程における印加電流密度のうちの少なくとも一方に応じて多元系ナノワイヤーの製造を制御するようにしたことを製造方法。 - 請求項1に記載の多元系ナノワイヤーの製造方法であって、
前記(d)ステップにおいて、前記陽極酸化アルミニウムナノテンプレートをNaOH溶液を利用して除去することを特徴とする製造方法。 - 請求項1ないし請求項10のいずれかに記載の方法によって製造された多元系ナノワイヤー。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020080137859A KR101093364B1 (ko) | 2008-12-31 | 2008-12-31 | 다원계 나노선 제조방법 |
KR10-2008-0137859 | 2008-12-31 |
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JP2013177696A true JP2013177696A (ja) | 2013-09-09 |
JP5525090B2 JP5525090B2 (ja) | 2014-06-18 |
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JP2009214183A Pending JP2010156038A (ja) | 2008-12-31 | 2009-09-16 | 多元系ナノワイヤーの製造方法 |
JP2013122472A Active JP5525090B2 (ja) | 2008-12-31 | 2013-06-11 | 多元系ナノワイヤーの製造方法 |
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US (1) | US20100163419A1 (ja) |
EP (1) | EP2204474B1 (ja) |
JP (2) | JP2010156038A (ja) |
KR (1) | KR101093364B1 (ja) |
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KR101332422B1 (ko) * | 2011-01-07 | 2013-12-02 | 건국대학교 산학협력단 | 전기화학성장을 이용한 단결정 산화구리 (i) 나노선 어레이 제조 방법 |
CN102330058B (zh) * | 2011-09-20 | 2013-07-03 | 北京航空航天大学 | 采用物理气相沉积制备多级次碲化锑纳米线束阵列的方法 |
KR101411332B1 (ko) | 2013-12-17 | 2014-06-27 | 연세대학교 산학협력단 | 금속산화물나노선의 이온주입 성장방법 및 이를 이용한 금속산화물나노선 패턴 소자 |
CN104803348A (zh) * | 2015-04-20 | 2015-07-29 | 中国科学院光电技术研究所 | 一种牺牲模板制备高深宽比聚合物纳米柱阵列的方法 |
CN109795975A (zh) * | 2018-12-28 | 2019-05-24 | 南京大学 | 一种金属微/纳米线阵列及其制备方法 |
CN110310891B (zh) * | 2019-06-28 | 2021-10-01 | 惠科股份有限公司 | 金属纳米线导电薄膜的制备方法及薄膜晶体管 |
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2008
- 2008-12-31 KR KR1020080137859A patent/KR101093364B1/ko active IP Right Grant
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2009
- 2009-09-16 JP JP2009214183A patent/JP2010156038A/ja active Pending
- 2009-09-18 EP EP09011927A patent/EP2204474B1/en active Active
- 2009-09-24 US US12/566,431 patent/US20100163419A1/en not_active Abandoned
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US20100163419A1 (en) | 2010-07-01 |
JP2010156038A (ja) | 2010-07-15 |
EP2204474B1 (en) | 2012-08-01 |
EP2204474A1 (en) | 2010-07-07 |
JP5525090B2 (ja) | 2014-06-18 |
KR101093364B1 (ko) | 2011-12-14 |
KR20100079391A (ko) | 2010-07-08 |
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