JP2013159670A - 硬化性シリコーン組成物、その硬化物、および光半導体装置 - Google Patents

硬化性シリコーン組成物、その硬化物、および光半導体装置 Download PDF

Info

Publication number
JP2013159670A
JP2013159670A JP2012021279A JP2012021279A JP2013159670A JP 2013159670 A JP2013159670 A JP 2013159670A JP 2012021279 A JP2012021279 A JP 2012021279A JP 2012021279 A JP2012021279 A JP 2012021279A JP 2013159670 A JP2013159670 A JP 2013159670A
Authority
JP
Japan
Prior art keywords
component
mol
group
mass
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2012021279A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013159670A5 (enExample
Inventor
Ryosuke Yamazaki
亮介 山▲崎▼
Makoto Yoshitake
誠 吉武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Toray Specialty Materials KK
Original Assignee
Dow Corning Toray Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Toray Co Ltd filed Critical Dow Corning Toray Co Ltd
Priority to JP2012021279A priority Critical patent/JP2013159670A/ja
Priority to US14/375,989 priority patent/US9048406B2/en
Priority to TW102104072A priority patent/TW201333118A/zh
Priority to EP13706077.8A priority patent/EP2809726A1/en
Priority to PCT/JP2013/052964 priority patent/WO2013115415A1/en
Priority to KR1020147023659A priority patent/KR20140128350A/ko
Priority to CN201380010321.3A priority patent/CN104136546A/zh
Publication of JP2013159670A publication Critical patent/JP2013159670A/ja
Publication of JP2013159670A5 publication Critical patent/JP2013159670A5/ja
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/549—Silicon-containing compounds containing silicon in a ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/045—Polysiloxanes containing less than 25 silicon atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2237—Oxides; Hydroxides of metals of titanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
JP2012021279A 2012-02-02 2012-02-02 硬化性シリコーン組成物、その硬化物、および光半導体装置 Abandoned JP2013159670A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2012021279A JP2013159670A (ja) 2012-02-02 2012-02-02 硬化性シリコーン組成物、その硬化物、および光半導体装置
US14/375,989 US9048406B2 (en) 2012-02-02 2013-02-01 Curable silicone composition, cured product thereof, and optical semiconductor device
TW102104072A TW201333118A (zh) 2012-02-02 2013-02-01 硬化性矽酮組合物、其硬化產品及光半導體裝置
EP13706077.8A EP2809726A1 (en) 2012-02-02 2013-02-01 Curable silicone composition, cured product thereof, and optical semiconductor device
PCT/JP2013/052964 WO2013115415A1 (en) 2012-02-02 2013-02-01 Curable silicone composition, cured product thereof, and optical semiconductor device
KR1020147023659A KR20140128350A (ko) 2012-02-02 2013-02-01 경화성 실리콘 조성물, 이의 경화물, 및 광반도체 장치
CN201380010321.3A CN104136546A (zh) 2012-02-02 2013-02-01 可固化有机硅组合物、其固化产物及光学半导体器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012021279A JP2013159670A (ja) 2012-02-02 2012-02-02 硬化性シリコーン組成物、その硬化物、および光半導体装置

Publications (2)

Publication Number Publication Date
JP2013159670A true JP2013159670A (ja) 2013-08-19
JP2013159670A5 JP2013159670A5 (enExample) 2015-02-26

Family

ID=47750000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012021279A Abandoned JP2013159670A (ja) 2012-02-02 2012-02-02 硬化性シリコーン組成物、その硬化物、および光半導体装置

Country Status (7)

Country Link
US (1) US9048406B2 (enExample)
EP (1) EP2809726A1 (enExample)
JP (1) JP2013159670A (enExample)
KR (1) KR20140128350A (enExample)
CN (1) CN104136546A (enExample)
TW (1) TW201333118A (enExample)
WO (1) WO2013115415A1 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015098072A1 (en) * 2013-12-27 2015-07-02 Dow Corning Toray Co., Ltd. Curable organopolysiloxane composition, member for transducers
WO2015186322A1 (ja) * 2014-06-03 2015-12-10 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、および光半導体装置
WO2016038836A1 (ja) * 2014-09-10 2016-03-17 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
WO2018037942A1 (ja) * 2016-08-26 2018-03-01 信越化学工業株式会社 付加硬化型シリコーンゴム組成物及びエアーバッグ
KR20180107218A (ko) * 2016-02-23 2018-10-01 다우 실리콘즈 코포레이션 경화성 고경도 실리콘 조성물 및 그로부터 제조된 복합 물품
JP2018165348A (ja) * 2017-03-29 2018-10-25 信越化学工業株式会社 高耐熱性付加硬化型シリコーン樹脂組成物
JP2019524959A (ja) * 2016-08-12 2019-09-05 ワッカー ケミー アクチエンゲゼルシャフトＷａｃｋｅｒ Ｃｈｅｍｉｅ ＡＧ 硬化性有機ポリシロキサン組成物、封止剤、および半導体デバイス
JP2021021038A (ja) * 2019-07-30 2021-02-18 デュポン・東レ・スペシャルティ・マテリアル株式会社 硬化性シリコーン組成物、光半導体装置、および光半導体装置の製造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101560043B1 (ko) * 2012-07-27 2015-10-15 주식회사 엘지화학 경화성 조성물
CN105705583B (zh) * 2013-10-11 2018-11-09 道康宁东丽株式会社 硬化性硅组合物和光半导体装置
JP6313722B2 (ja) * 2015-04-15 2018-04-18 信越化学工業株式会社 付加硬化型シリコーン組成物および半導体装置
JP6348446B2 (ja) * 2015-04-15 2018-06-27 信越化学工業株式会社 分岐状オルガノポリシロキサン及びその製造方法
JP6519305B2 (ja) * 2015-05-11 2019-05-29 富士電機株式会社 封止材用シリコーン樹脂組成物及び該組成物を用いたパワー半導体モジュール
EP3473675A1 (en) 2015-12-22 2019-04-24 Shin-Etsu Chemical Co., Ltd. Addition-curable silicone resin composition and a semiconductor device
KR102046575B1 (ko) * 2016-11-01 2019-11-19 주식회사 엘지화학 폴리카보네이트 수지 조성물
JP7299242B2 (ja) 2018-01-11 2023-06-27 ビーエーエスエフ ソシエタス・ヨーロピア Ｃ２～ｃ３－アルケニル置換リレンイミド色素および硬化型シリコーン樹脂組成物の硬化性生成物およびｃ２～ｃ３－アルケニル置換リレンイミド色素
KR102578330B1 (ko) * 2018-06-27 2023-09-18 다우 실리콘즈 코포레이션 열 갭 충전제 및 배터리 관리 시스템을 위한 이의 응용
WO2020043312A1 (en) * 2018-08-31 2020-03-05 Wacker Chemie Ag Thermosetting silicone resin composition for reflector of led, reflector of led and semiconductor device using the same

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004186168A (ja) * 2002-11-29 2004-07-02 Shin Etsu Chem Co Ltd 発光ダイオード素子用シリコーン樹脂組成物
TW200427111A (en) * 2003-03-12 2004-12-01 Shinetsu Chemical Co Material for coating/protecting light-emitting semiconductor and the light-emitting semiconductor device
JP4648099B2 (ja) * 2005-06-07 2011-03-09 信越化学工業株式会社 ダイボンディング用シリコーン樹脂組成物
JP5392805B2 (ja) * 2005-06-28 2014-01-22 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン樹脂組成物および光学部材
JP4634891B2 (ja) * 2005-08-18 2011-02-16 信越化学工業株式会社 熱伝導性シリコーングリース組成物およびその硬化物
JP2009021394A (ja) 2007-07-12 2009-01-29 Nitto Denko Corp 光半導体素子収納用実装パッケージ用樹脂組成物およびそれを用いて得られる光半導体発光装置
US8017246B2 (en) * 2007-11-08 2011-09-13 Philips Lumileds Lighting Company, Llc Silicone resin for protecting a light transmitting surface of an optoelectronic device
JP2009256400A (ja) * 2008-04-11 2009-11-05 Shin Etsu Chem Co Ltd 半導体素子用シリコーン接着剤
JP5108825B2 (ja) * 2009-04-24 2012-12-26 信越化学工業株式会社 光半導体装置用シリコーン樹脂組成物及び光半導体装置
JP2011074355A (ja) * 2009-09-07 2011-04-14 Nitto Denko Corp 光半導体装置用樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、ならびに光半導体装置
JP2011140550A (ja) 2010-01-06 2011-07-21 Shin-Etsu Chemical Co Ltd 光学素子ケース成形用付加硬化型シリコーン樹脂組成物及び光半導体装置
JP5545246B2 (ja) * 2010-03-30 2014-07-09 信越化学工業株式会社 樹脂組成物及び発光半導体素子用リフレクター、及び発光半導体装置
US9178120B2 (en) * 2010-04-02 2015-11-03 Kaneka Corporation Curable resin composition, curable resin composition tablet, molded body, semiconductor package, semiconductor component and light emitting diode
JP5385868B2 (ja) 2010-07-12 2014-01-08 株式会社双和 戸当り装置
JP2012149131A (ja) * 2011-01-17 2012-08-09 Shin-Etsu Chemical Co Ltd シリコーン樹脂組成物及び当該組成物を使用した光半導体装置

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015098072A1 (en) * 2013-12-27 2015-07-02 Dow Corning Toray Co., Ltd. Curable organopolysiloxane composition, member for transducers
US10005906B2 (en) 2014-06-03 2018-06-26 Dow Corning Toray Co., Ltd. Curable silicone composition, and optical semiconductor device
WO2015186322A1 (ja) * 2014-06-03 2015-12-10 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、および光半導体装置
JPWO2015186322A1 (ja) * 2014-06-03 2017-04-20 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、および光半導体装置
CN106661329B (zh) * 2014-09-10 2020-06-23 陶氏东丽株式会社 固化性有机硅组合物、其固化物以及光半导体装置
CN106661329A (zh) * 2014-09-10 2017-05-10 道康宁东丽株式会社 固化性有机硅组合物、其固化物以及光半导体装置
WO2016038836A1 (ja) * 2014-09-10 2016-03-17 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
KR20180107218A (ko) * 2016-02-23 2018-10-01 다우 실리콘즈 코포레이션 경화성 고경도 실리콘 조성물 및 그로부터 제조된 복합 물품
JP2019504918A (ja) * 2016-02-23 2019-02-21 ダウ シリコーンズ コーポレーション 高硬度の硬化性シリコーン組成物及びそれから製造した複合物品
KR102131607B1 (ko) * 2016-02-23 2020-07-08 다우 실리콘즈 코포레이션 경화성 고경도 실리콘 조성물 및 그로부터 제조된 복합 물품
US10829640B2 (en) 2016-02-23 2020-11-10 Dow Silicones Corporation Curable high hardness silicone composition and composite articles made thereof
JP2019524959A (ja) * 2016-08-12 2019-09-05 ワッカー ケミー アクチエンゲゼルシャフトＷａｃｋｅｒ Ｃｈｅｍｉｅ ＡＧ 硬化性有機ポリシロキサン組成物、封止剤、および半導体デバイス
US11028266B2 (en) 2016-08-12 2021-06-08 Wacker Chemie Ag Curable organopolysiloxane composition, encapsulant and semiconductor device
WO2018037942A1 (ja) * 2016-08-26 2018-03-01 信越化学工業株式会社 付加硬化型シリコーンゴム組成物及びエアーバッグ
JP2018030964A (ja) * 2016-08-26 2018-03-01 信越化学工業株式会社 付加硬化型シリコーンゴム組成物及びエアーバッグ
JP2018165348A (ja) * 2017-03-29 2018-10-25 信越化学工業株式会社 高耐熱性付加硬化型シリコーン樹脂組成物
JP2021021038A (ja) * 2019-07-30 2021-02-18 デュポン・東レ・スペシャルティ・マテリアル株式会社 硬化性シリコーン組成物、光半導体装置、および光半導体装置の製造方法

Also Published As

Publication number Publication date
CN104136546A (zh) 2014-11-05
US20140367723A1 (en) 2014-12-18
WO2013115415A1 (en) 2013-08-08
US9048406B2 (en) 2015-06-02
KR20140128350A (ko) 2014-11-05
TW201333118A (zh) 2013-08-16
EP2809726A1 (en) 2014-12-10

Similar Documents

Publication Publication Date Title
JP5912600B2 (ja) 硬化性シリコーン組成物、その硬化物、および光半導体装置
JP6046395B2 (ja) 反応性シリコーン組成物、反応性熱可塑体、硬化物、および光半導体装置
US9048406B2 (en) Curable silicone composition, cured product thereof, and optical semiconductor device
JP2013159671A (ja) 硬化性シリコーン組成物、その硬化物、および光半導体装置
JP5680889B2 (ja) 硬化性オルガノポリシロキサン組成物および光半導体装置
JP5534977B2 (ja) 硬化性オルガノポリシロキサン組成物および光半導体装置
JP6057503B2 (ja) 光半導体素子封止用硬化性シリコーン組成物、樹脂封止光半導体素子の製造方法、および樹脂封止光半導体素子
WO2014200112A1 (ja) 反応性シリコーン組成物、反応性熱可塑体、硬化物、および光半導体装置
TWI767988B (zh) 固化性有機聚矽氧烷組成物以及半導體裝置
TWI791554B (zh) 可固化有機聚矽氧烷組成物及光學半導體裝置
JP6302902B2 (ja) 反応性シリコーン組成物、反応性熱可塑体、硬化物、および光半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150108

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150108

A762 Written abandonment of application

Free format text: JAPANESE INTERMEDIATE CODE: A762

Effective date: 20150824