CN104136546A - 可固化有机硅组合物、其固化产物及光学半导体器件 - Google Patents

可固化有机硅组合物、其固化产物及光学半导体器件 Download PDF

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Publication number
CN104136546A
CN104136546A CN201380010321.3A CN201380010321A CN104136546A CN 104136546 A CN104136546 A CN 104136546A CN 201380010321 A CN201380010321 A CN 201380010321A CN 104136546 A CN104136546 A CN 104136546A
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China
Prior art keywords
groups
mass
parts
cured product
bonded
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Pending
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CN201380010321.3A
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English (en)
Chinese (zh)
Inventor
山崎亮介
吉武诚
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DuPont Toray Specialty Materials KK
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Dow Corning Toray Co Ltd
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Publication of CN104136546A publication Critical patent/CN104136546A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/549—Silicon-containing compounds containing silicon in a ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/045—Polysiloxanes containing less than 25 silicon atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2237—Oxides; Hydroxides of metals of titanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
CN201380010321.3A 2012-02-02 2013-02-01 可固化有机硅组合物、其固化产物及光学半导体器件 Pending CN104136546A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012-021279 2012-02-02
JP2012021279A JP2013159670A (ja) 2012-02-02 2012-02-02 硬化性シリコーン組成物、その硬化物、および光半導体装置
PCT/JP2013/052964 WO2013115415A1 (en) 2012-02-02 2013-02-01 Curable silicone composition, cured product thereof, and optical semiconductor device

Publications (1)

Publication Number Publication Date
CN104136546A true CN104136546A (zh) 2014-11-05

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CN201380010321.3A Pending CN104136546A (zh) 2012-02-02 2013-02-01 可固化有机硅组合物、其固化产物及光学半导体器件

Country Status (7)

Country Link
US (1) US9048406B2 (enExample)
EP (1) EP2809726A1 (enExample)
JP (1) JP2013159670A (enExample)
KR (1) KR20140128350A (enExample)
CN (1) CN104136546A (enExample)
TW (1) TW201333118A (enExample)
WO (1) WO2013115415A1 (enExample)

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CN106147238A (zh) * 2015-05-11 2016-11-23 富士电机株式会社 密封材料用有机硅树脂组合物及使用该组合物的功率半导体模块
US10005906B2 (en) 2014-06-03 2018-06-26 Dow Corning Toray Co., Ltd. Curable silicone composition, and optical semiconductor device
CN108495896A (zh) * 2016-11-01 2018-09-04 株式会社Lg化学 聚碳酸酯树脂组合物
CN112334542A (zh) * 2018-06-27 2021-02-05 美国陶氏有机硅公司 热间隙填料及其在电池管理系统中的应用

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US8946350B2 (en) * 2012-07-27 2015-02-03 Lg Chem, Ltd. Curable composition
JP6586552B2 (ja) * 2013-10-11 2019-10-09 ダウ・東レ株式会社 硬化性シリコーン組成物および光半導体装置
WO2015098072A1 (en) * 2013-12-27 2015-07-02 Dow Corning Toray Co., Ltd. Curable organopolysiloxane composition, member for transducers
JP6590445B2 (ja) * 2014-09-10 2019-10-16 ダウ・東レ株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
JP6348446B2 (ja) * 2015-04-15 2018-06-27 信越化学工業株式会社 分岐状オルガノポリシロキサン及びその製造方法
JP6313722B2 (ja) * 2015-04-15 2018-04-18 信越化学工業株式会社 付加硬化型シリコーン組成物および半導体装置
EP3473675A1 (en) * 2015-12-22 2019-04-24 Shin-Etsu Chemical Co., Ltd. Addition-curable silicone resin composition and a semiconductor device
WO2017143508A1 (en) 2016-02-23 2017-08-31 Dow Corning Corporation Curable high hardness silicone composition and composite articles made thereof
WO2018028792A1 (en) 2016-08-12 2018-02-15 Wacker Chemie Ag Curable organopolysiloxane composition, encapsulant and semiconductor device
JP6690468B2 (ja) * 2016-08-26 2020-04-28 信越化学工業株式会社 付加硬化型シリコーンゴム組成物及びエアーバッグ
JP2018165348A (ja) * 2017-03-29 2018-10-25 信越化学工業株式会社 高耐熱性付加硬化型シリコーン樹脂組成物
WO2019137975A2 (en) 2018-01-11 2019-07-18 Basf Se C2-c3-alkenyl-substituted rylene imide dyes and curing product of curable silicon resin composition and c2-c3-alkenyl-substituted rylene imide dyes
WO2020043312A1 (en) * 2018-08-31 2020-03-05 Wacker Chemie Ag Thermosetting silicone resin composition for reflector of led, reflector of led and semiconductor device using the same
JP2021021038A (ja) 2019-07-30 2021-02-18 デュポン・東レ・スペシャルティ・マテリアル株式会社 硬化性シリコーン組成物、光半導体装置、および光半導体装置の製造方法

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TW201006902A (en) * 2008-04-11 2010-02-16 Shinetsu Chemical Co Silicone adhesive for semiconductor element
JP2011140550A (ja) * 2010-01-06 2011-07-21 Shin-Etsu Chemical Co Ltd 光学素子ケース成形用付加硬化型シリコーン樹脂組成物及び光半導体装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10005906B2 (en) 2014-06-03 2018-06-26 Dow Corning Toray Co., Ltd. Curable silicone composition, and optical semiconductor device
CN106147238A (zh) * 2015-05-11 2016-11-23 富士电机株式会社 密封材料用有机硅树脂组合物及使用该组合物的功率半导体模块
CN106147238B (zh) * 2015-05-11 2020-09-22 富士电机株式会社 密封材料用有机硅树脂组合物及使用该组合物的功率半导体模块
CN108495896A (zh) * 2016-11-01 2018-09-04 株式会社Lg化学 聚碳酸酯树脂组合物
CN112334542A (zh) * 2018-06-27 2021-02-05 美国陶氏有机硅公司 热间隙填料及其在电池管理系统中的应用
CN112334542B (zh) * 2018-06-27 2023-02-21 美国陶氏有机硅公司 热间隙填料及其在电池管理系统中的应用

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Publication number Publication date
JP2013159670A (ja) 2013-08-19
EP2809726A1 (en) 2014-12-10
KR20140128350A (ko) 2014-11-05
WO2013115415A1 (en) 2013-08-08
TW201333118A (zh) 2013-08-16
US9048406B2 (en) 2015-06-02
US20140367723A1 (en) 2014-12-18

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Application publication date: 20141105