JP2013131656A - 半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 87
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 210000000746 body region Anatomy 0.000 claims abstract description 48
- 238000010438 heat treatment Methods 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 20
- 230000004913 activation Effects 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000003763 carbonization Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 161
- 230000001681 protective effect Effects 0.000 description 8
- 230000003213 activating effect Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Abstract
【解決手段】炭化珪素基板30は、互いに対向する第1の面S1および第2の面S2を有するn型ドリフト層32と、n型ドリフト層32の第1の面S1に設けられたp型ボディ領域33と、p型ボディ領域33によってn型ドリフト層32から隔てられるようにp型ボディ領域33の上に設けられたn型エミッタ領域34とを含む。ゲート絶縁膜11は、n型ドリフト層32とn型エミッタ領域34とをつなぐようにp型ボディ領域33上に設けられている。p型Siコレクタ層70は、n型ドリフト層32の第2の面S2に面するように炭化珪素基板30上に直接設けられている。
【選択図】図1
Description
図1に示すように、本実施の形態のIGBT91(半導体装置)は、炭化珪素基板30と、ゲート絶縁膜11と、ゲート電極9と、エミッタ電極42と、エミッタ配線43と、p型Siコレクタ層70と、コレクタ電極44と、層間絶縁膜10と、保護電極15とを有する。
図2を参照して、炭化珪素から作られたn型単結晶基板20が準備される。好ましくはn型単結晶基板20は、炭化珪素基板30(図1)と同様の結晶構造を有する。また好ましくはn型単結晶基板20の主面(図中、上面)は、上面S1の面方位と同様の面方位を有する。
図12を参照して、本実施の形態のIGBT92(半導体装置)において、炭化珪素基板30vはp型SiC層31を含む。p型SiC層31は、n型ドリフト層32によってp型ボディ領域33から隔てられており、p型Siコレクタ層70上に直接位置している。なお、上記以外の構成については、上述した実施の形態1の構成とほぼ同じであるため、同一または対応する要素について同一の符号を付し、その説明を繰り返さない。
Claims (11)
- 互いに対向する第1および第2の面を有するn型ドリフト層と、前記n型ドリフト層の前記第1の面に設けられたp型ボディ領域と、前記p型ボディ領域によって前記n型ドリフト層から隔てられるように前記p型ボディ領域の上に設けられたn型エミッタ領域とを含む炭化珪素基板と、
前記n型ドリフト層と前記n型エミッタ領域とをつなぐように前記p型ボディ領域上に設けられたゲート絶縁膜と、
前記ゲート絶縁膜上に設けられたゲート電極と、
前記n型エミッタ領域および前記p型ボディ領域の各々に接するエミッタ電極と、
前記n型ドリフト層の前記第2の面に面するように前記炭化珪素基板上に直接設けられたp型Siコレクタ層とを備える、半導体装置。 - 前記p型Siコレクタ層はポリシリコンから作られている、請求項1に記載の半導体装置。
- 前記p型Siコレクタ層はアモルファスシリコンから作られている、請求項1に記載の半導体装置。
- 前記炭化珪素基板は、前記n型ドリフト層によって前記p型ボディ領域から隔てられ前記p型Siコレクタ層上に直接位置するp型SiC層を含む、請求項1〜3のいずれか1項に記載の半導体装置。
- 炭化珪素から作られたn型単結晶基板上においてドナー型不純物を添加しながら炭化珪素をエピタキシャルに成長させることによって、前記n型単結晶基板およびその上に設けられたn型ドリフト層を有する炭化珪素基板を形成する工程を備え、前記n型ドリフト層は、互いに対向する第1および第2の面を有し前記第2の面は前記n型単結晶基板に面し、さらに
前記n型ドリフト層の前記第1の面に位置するp型ボディ領域と、前記p型ボディ領域によって前記n型ドリフト層から隔てられるように前記p型ボディ領域の上に位置するn型エミッタ領域とを形成する工程と、
前記n型ドリフト層と前記n型エミッタ領域とをつなぐように前記p型ボディ領域上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、
前記n型エミッタ領域および前記p型ボディ領域の各々に接するエミッタ電極を形成する工程と、
前記炭化珪素基板上にシリコンをアクセプタ型不純物を添加しながら堆積させることで、前記n型ドリフト層の前記第2の面に面するp型Siコレクタ層を形成する工程とを備える、半導体装置の製造方法。 - 前記p型Siコレクタ層の活性化熱処理を行う工程をさらに備える、請求項5に記載の半導体装置の製造方法。
- 前記活性化熱処理を行う工程の後に、前記p型Siコレクタ層上にコレクタ電極を形成する工程をさらに備える、請求項6に記載の半導体装置の製造方法。
- 前記活性化熱処理を行う工程は、前記p型Siコレクタ層へレーザ光を照射する工程を含む、請求項6または7に記載の半導体装置の製造方法。
- 前記p型Siコレクタ層を形成する工程の前に、前記エミッタ電極上に前記エミッタ電極の融点に比して低い融点を有するエミッタ配線を形成する工程をさらに備える、請求項5〜8のいずれか1項に記載の半導体装置の製造方法。
- 前記n型ドリフト層を形成する工程の後に、前記n型単結晶基板の少なくとも一部を除去する工程をさらに備える、請求項5〜9のいずれか1項に記載の半導体装置の製造方法。
- 前記p型Siコレクタ層を形成する工程の前に、イオン注入法によって前記炭化珪素基板上へアクセプタ型不純物を注入しレーザ光を照射することにより、前記n型ドリフト層の前記第2の面に面するp型SiC層を形成する工程をさらに備え、
前記p型Siコレクタ層を形成する工程は、前記p型SiC層に接する前記p型Siコレクタ層を形成することによって行われる、請求項5〜10のいずれか1項に記載の半導体装置の製造方法。
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JP2011280650A JP5811829B2 (ja) | 2011-12-22 | 2011-12-22 | 半導体装置の製造方法 |
EP12860644.9A EP2797117A4 (en) | 2011-12-22 | 2012-10-16 | SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR |
PCT/JP2012/076689 WO2013094297A1 (ja) | 2011-12-22 | 2012-10-16 | 半導体装置およびその製造方法 |
CN201280056840.9A CN103959472B (zh) | 2011-12-22 | 2012-10-16 | 半导体器件及其制造方法 |
US13/679,576 US8866262B2 (en) | 2011-12-22 | 2012-11-16 | Vertical semiconductor device having silicon carbide substrate |
US14/490,391 US9153661B2 (en) | 2011-12-22 | 2014-09-18 | Semiconductor device and method for manufacturing same |
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JP2015032614A (ja) * | 2013-07-31 | 2015-02-16 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP6237046B2 (ja) * | 2013-09-25 | 2017-11-29 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
CN103855206A (zh) * | 2014-02-18 | 2014-06-11 | 宁波达新半导体有限公司 | 绝缘栅双极晶体管及其制造方法 |
CN106574397B (zh) | 2014-08-01 | 2019-10-22 | 住友电气工业株式会社 | 外延晶片及其制造方法 |
DE112015003959T5 (de) * | 2014-08-29 | 2017-05-18 | Sumitomo Electric Industries Ltd. | Siliziumkarbid-Halbleitervorrichtung und Verfahren zur Herstellung derselben |
US9553155B2 (en) * | 2015-02-04 | 2017-01-24 | Infineon Technologies Austria Ag | Semiconductor device and method |
US9728608B2 (en) * | 2015-03-24 | 2017-08-08 | Kabushiki Kaisha Toshiba | Semiconductor device, inverter circuit, and vehicle |
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EP2797117A4 (en) | 2015-08-19 |
WO2013094297A1 (ja) | 2013-06-27 |
US8866262B2 (en) | 2014-10-21 |
JP5811829B2 (ja) | 2015-11-11 |
CN103959472B (zh) | 2016-08-17 |
US20130161619A1 (en) | 2013-06-27 |
CN103959472A (zh) | 2014-07-30 |
US20150004757A1 (en) | 2015-01-01 |
EP2797117A1 (en) | 2014-10-29 |
US9153661B2 (en) | 2015-10-06 |
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