JP2013128107A - ナノワイヤのシードを横方向に結晶化することにより生成される単結晶シリコンの薄膜トランジスタ(tft) - Google Patents
ナノワイヤのシードを横方向に結晶化することにより生成される単結晶シリコンの薄膜トランジスタ(tft) Download PDFInfo
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- 239000002070 nanowire Substances 0.000 title claims abstract description 36
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 238000002425 crystallisation Methods 0.000 title claims abstract description 18
- 230000008025 crystallization Effects 0.000 title claims abstract description 18
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title description 12
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000013078 crystal Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000003054 catalyst Substances 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 8
- 238000000059 patterning Methods 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 45
- 239000010703 silicon Substances 0.000 claims description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 46
- 239000010931 gold Substances 0.000 description 46
- 229910052737 gold Inorganic materials 0.000 description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 44
- 238000005516 engineering process Methods 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02653—Vapour-liquid-solid growth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
Abstract
【解決手段】サンプルの基板10の上に薄い金属膜を堆積させるステップと、薄い金属を膜パターン化することにより、基板の上に金属島を設けるステップと、サンプルをアニール処理して、金属島の水分を取り除き、金属小滴12bを金属島から形成するステップと、を含むことができる方法を提供する。この方法はまた、金属小滴を触媒として用いて、基板の上でナノワイヤ14を成長させるステップと、サンプルの上に半導体材料の薄膜を堆積させるステップと、サンプルをアニール処理して、横方向への結晶化を可能にして、結晶粒を形成するステップと、結晶粒をパターン化して、結晶島16Bを設けるステップと、を含むこともできる。この結晶島を用いて、電子デバイスを加工することができる。
【選択図】図10A
Description
Claims (4)
- 薄い金属膜をサンプルの基板の上に堆積させるステップと、
前記基板の上の前記薄い金属膜をパターン化することにより、金属島を前記基板の上に設けるステップと、
前記サンプルをアニール処理して、前記金属島から水分を取り除き、前記金属島から金属小滴を形成するステップと、
前記金属小滴を触媒として用いて、前記基板の上に第1の半導体材料を含むナノワイヤを成長させるステップと、
前記サンプル上に第2の半導体材料の薄膜を堆積させるステップと、
前記サンプルをアニール処理して、横方向への結晶化を可能にして、結晶粒を形成するステップと、
前記結晶粒をパターン化して、結晶島を設けるステップと、
前記結晶島を用いて電子デバイスを加工するステップと、を含む方法。 - 光エッチング処理を行って、水分を取り除かれなかった前記金属島の部分を全て取り除くステップをさらに含む請求項1に記載の方法。
- 前記第2の半導体材料の前記薄膜を、前記サンプル上に堆積させる前記ステップの後に、シリコン酸化物の保護膜を、サンプルの上に堆積させるステップをさらに含む請求項1に記載の方法。
- 前記結晶粒をパターン化する前記ステップの後に、不必要なシリコンを取り除くステップをさらに含む請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/330,516 | 2011-12-19 | ||
US13/330,516 US8673750B2 (en) | 2011-12-19 | 2011-12-19 | Single crystal silicon TFTs made by lateral crystallization from a nanowire seed |
Publications (1)
Publication Number | Publication Date |
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JP2013128107A true JP2013128107A (ja) | 2013-06-27 |
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JP2012262973A Pending JP2013128107A (ja) | 2011-12-19 | 2012-11-30 | ナノワイヤのシードを横方向に結晶化することにより生成される単結晶シリコンの薄膜トランジスタ(tft) |
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US (1) | US8673750B2 (ja) |
JP (1) | JP2013128107A (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US8894419B1 (en) * | 2012-08-14 | 2014-11-25 | Bby Solutions, Inc. | Magnetically connected universal computer power adapter |
US9463440B2 (en) * | 2013-09-16 | 2016-10-11 | The Board Of Trustees Of The University Of Alabama | Oxide-based nanostructures and methods for their fabrication and use |
US10312081B2 (en) | 2016-07-15 | 2019-06-04 | University Of Kentucky Research Foundation | Synthesis of metal oxide surfaces and interfaces with crystallographic control using solid-liquid-vapor etching and vapor-liquid-solid growth |
WO2019182261A1 (ko) * | 2018-03-23 | 2019-09-26 | 홍잉 | 단결정립 나노와이어 제조 방법 및 이를 적용하는 반도체 소자의 제조 방법 |
Citations (8)
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JPS61285754A (ja) * | 1985-06-13 | 1986-12-16 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH03290924A (ja) * | 1990-03-22 | 1991-12-20 | Ricoh Co Ltd | 結晶性シリコン膜の製造方法および結晶性シリコン半導体の製造方法 |
JP2001127301A (ja) * | 1999-10-27 | 2001-05-11 | Sanyo Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2001345451A (ja) * | 2000-05-30 | 2001-12-14 | Hitachi Ltd | 薄膜半導体集積回路装置、それを用いた画像表示装置、及びその製造方法 |
JP2008053730A (ja) * | 2006-08-25 | 2008-03-06 | General Electric Co <Ge> | 単一コンフォーマル接合のナノワイヤ光起電力装置 |
WO2008072479A1 (ja) * | 2006-12-13 | 2008-06-19 | Panasonic Corporation | ナノワイヤ及びナノワイヤを備える装置並びにそれらの製造方法 |
JP2008243843A (ja) * | 2007-03-23 | 2008-10-09 | Advanced Lcd Technologies Development Center Co Ltd | 結晶化方法、薄膜トランジスタの製造方法、レーザ結晶化用基板、薄膜トランジスタおよび表示装置 |
JP2011219355A (ja) * | 2010-04-02 | 2011-11-04 | Samsung Electronics Co Ltd | 金属ナノクラスターを含むシリコンナノワイヤ及びその製造方法 |
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US20110189510A1 (en) * | 2010-01-29 | 2011-08-04 | Illuminex Corporation | Nano-Composite Anode for High Capacity Batteries and Methods of Forming Same |
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- 2011-12-19 US US13/330,516 patent/US8673750B2/en not_active Expired - Fee Related
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- 2012-11-30 JP JP2012262973A patent/JP2013128107A/ja active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS61285754A (ja) * | 1985-06-13 | 1986-12-16 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH03290924A (ja) * | 1990-03-22 | 1991-12-20 | Ricoh Co Ltd | 結晶性シリコン膜の製造方法および結晶性シリコン半導体の製造方法 |
JP2001127301A (ja) * | 1999-10-27 | 2001-05-11 | Sanyo Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2001345451A (ja) * | 2000-05-30 | 2001-12-14 | Hitachi Ltd | 薄膜半導体集積回路装置、それを用いた画像表示装置、及びその製造方法 |
JP2008053730A (ja) * | 2006-08-25 | 2008-03-06 | General Electric Co <Ge> | 単一コンフォーマル接合のナノワイヤ光起電力装置 |
WO2008072479A1 (ja) * | 2006-12-13 | 2008-06-19 | Panasonic Corporation | ナノワイヤ及びナノワイヤを備える装置並びにそれらの製造方法 |
JP2008243843A (ja) * | 2007-03-23 | 2008-10-09 | Advanced Lcd Technologies Development Center Co Ltd | 結晶化方法、薄膜トランジスタの製造方法、レーザ結晶化用基板、薄膜トランジスタおよび表示装置 |
JP2011219355A (ja) * | 2010-04-02 | 2011-11-04 | Samsung Electronics Co Ltd | 金属ナノクラスターを含むシリコンナノワイヤ及びその製造方法 |
Non-Patent Citations (1)
Title |
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JPN6016001965; Niklas Skold, Lisa S. Karlsson et al.: 'Growth and Optical Properties ofStrained GaAs-GaxIn1-xP Core-ShellNanowires' Nano Letters Vol.5, No.10, 20050913, p.1943-1947 * |
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US8673750B2 (en) | 2014-03-18 |
US20130157447A1 (en) | 2013-06-20 |
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