WO2008072479A1 - ナノワイヤ及びナノワイヤを備える装置並びにそれらの製造方法 - Google Patents
ナノワイヤ及びナノワイヤを備える装置並びにそれらの製造方法 Download PDFInfo
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- WO2008072479A1 WO2008072479A1 PCT/JP2007/073034 JP2007073034W WO2008072479A1 WO 2008072479 A1 WO2008072479 A1 WO 2008072479A1 JP 2007073034 W JP2007073034 W JP 2007073034W WO 2008072479 A1 WO2008072479 A1 WO 2008072479A1
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- nanowire
- semiconductor material
- fine particles
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- elements
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
Definitions
- the present invention relates to nanowires, devices including nanowires, and methods of manufacturing the same.
- the present invention relates to a structure of a nanowire functionalized in a self-organizing manner, a manufacturing method thereof, and an electronic device using the same!
- Non-patent Document 1 carbon nanotubes (Non-patent Document 1) and nanowires (Patent Document 1) formed from a material exhibiting semiconducting properties have attracted attention.
- Carbon nanotubes and nanowires are fine structures with a diameter of about 2 nm to 1 ⁇ m, and can be formed in a self-organizing manner. Therefore, there is a possibility of realizing a nanometer-sized high-performance electronic device without using advanced photolithography technology and etching technology. Such a fine structure is expected as a technology that enables low-cost production of high-performance devices without using complex process technology.
- FIG. 14 (a) shows a schematic structural diagram of a nanowire.
- a nanowire is a fine columnar structure having a diameter of about 1 nm to 1 m.
- the length of the nanowire is about 500 nm to 1 mm, and can be set as appropriate according to the application purpose.
- FIG. 14 (b) shows a nanowire (hereinafter referred to as “core-shell nanowire”) 1002 in which the core portion 1003 (inner side) and the shell portion 1004 (outer side) are made of different materials.
- core-shell nanowire hereinafter referred to as “core-shell nanowire”
- Te! /, Ru Patent Literature 2
- FIG. 14 (c) shows the first semiconductor nanowire 1006 and the second semiconductor in the length direction of the nanowire. This shows nanowire 1005 (hetero nanowire) in which nanowire 1007 is arranged! (Patent Document 2).
- Nanowires that can realize microstructures and material engineering in a self-organizing manner are expected in the future.
- Patent Document 1 Japanese Translation of Special Publication 2004-535066
- Patent Document 2 Japanese Translation of Special Publication 2004-532133
- Non-Patent Literature 1 R. Martel, et al., Single— and multi carbon nanotube field — effect transistors, ”Appl. Phys. Lett. 73 pp. 2447, 1998
- nanowires are extremely fine structures that are expected to be used in various applications and are actively studied, the surface and the inside of nanowires are further subjected to processing such as microfabrication. It is extremely difficult to increase functionality.
- the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a nanowire functionalized in a self-organizing manner, a device including the nanowire, and a method for manufacturing the nanowire. .
- the nanowire of the present invention includes a nanowire body formed from a first semiconductor material containing a plurality of elements, and at least one of the plurality of elements, which is different from the first semiconductor material. And a plurality of fine particles formed of a second semiconductor material and positioned on at least one of the inside and the surface of the nanowire body.
- the first semiconductor material and the second semiconductor material have different band gaps.
- the plurality of fine particles are single crystal or polycrystal.
- the first region and the second region are made of different semiconductor materials.
- the first semiconductor material is formed of at least two elements selected from the group consisting of silicon, germanium, and carbon.
- the light-emitting device of the present invention includes at least one nanowire, and a first electrode and a second electrode connected to the nanowire, and the nanowire includes a first semiconductor material containing a plurality of elements.
- a nanowire body formed from a second semiconductor material containing at least one of the plurality of elements and different from the first semiconductor material, and at least a part of the inside and the surface of the nanowire body When a voltage is applied to the first electrode and the second electrode, at least some of the plurality of fine particles emit light.
- the plurality of fine particles are located inside the nanowire body and covered with the first semiconductor material.
- the light-receiving element of the present invention includes at least one nanowire, and a first electrode and a second electrode connected to the nanowire, and the nanowire includes a first semiconductor material containing a plurality of elements.
- a nanowire body formed from a second semiconductor material containing at least one of the plurality of elements and different from the first semiconductor material, and at least a part of the inside and the surface of the nanowire body And a plurality of fine particles positioned at a position, and when light is incident on the plurality of fine particles, current is generated between the first electrode and the second electrode.
- the plurality of fine particles are present in the light receiving region portion of the nanowire.
- An electronic device includes any one of the above nanowires.
- the method for producing nanowires according to the present invention comprises a step (A) of preparing a substrate having catalytic metal particles arranged on the surface, and a first semiconductor material containing a plurality of elements on the substrate. And forming a plurality of fine particles formed from the second semiconductor material containing at least one of the plurality of elements on the surface and at least a part of the inside of the nanowire body.
- Step (C) wherein the step (C) includes the step (cl) of depositing the plurality of fine particles on the surface of the nanowire body, and at least a part of the plurality of fine particles inside the nanowire body. (C2).
- the plurality of fine particles are precipitated on the surface of the nanowire body by thermally oxidizing the surface of the first semiconductor material.
- the plurality of fine particles are moved by heat-treating the nanowire body in an inert gas atmosphere.
- the nanowire of the present invention includes a plurality of fine particles located inside and at least part of the surface of the nanowire main body formed from the first semiconductor material, and the fine particles are formed from the second semiconductor material. Therefore, it becomes possible to realize various devices.
- FIG. 1 (a) is a cross-sectional view showing a nanowire of the present invention, and (b) is a cross-sectional view taken along the line AA.
- FIG. 2] (a) to (d) are process diagrams showing a method for producing a nanowire of the present invention.
- FIG. 3 is a photograph showing a nanowire TEM image of Embodiment 1.
- FIG. 4 is a photograph showing an enlarged TEM image of the nanowire of Embodiment 1.
- FIG. 5 (a) and (b) are graphs showing the nanowire elemental analysis results of Embodiment 1.
- FIGS. 6 (a) to 6 (d) are process diagrams showing a method for producing a nanowire of Embodiment 1.
- FIGS. FIG. 7 (a) is a cross-sectional view showing a nanowire in Embodiment 2
- FIG. 7 (b) is a perspective view of the nanowire light-emitting element in Embodiment 2.
- FIG. 8 is a graph showing the relationship between Ge particle size and band gap.
- FIG. 9 (a) to (c) are process diagrams showing a method for producing the nanowire light-emitting device of Embodiment 2.
- FIG. 10 A view showing the structure of the nanowire of Embodiment 3.
- FIG. L l (a) to (d) are process diagrams showing a method of manufacturing a nanowire of Embodiment 3.
- FIG. 12 is a perspective view of a nanowire light-emitting element according to Embodiment 3.
- FIG. 13 (a) is a cross-sectional view of the nanowire in the fourth embodiment
- FIG. 13 (b) is a perspective view of the nanowire light receiving element in the fourth embodiment.
- FIG. 14 (a) to (c) are all perspective views showing a conventional nanowire.
- FIG. 16 is a graph showing the relationship between the thermal oxidation temperature of SiGe nanowires and the half width of the Ge-Ge mode peak.
- FIG. 17 is a graph showing an XRD spectrum of SiGe nanowires.
- Source gas (disilane gas, germane gas) Nanowire light emitting device
- FIG. 1 (a) is a perspective view of a nanowire according to the present invention
- FIG. 1 (b) is a cross-sectional view taken along line AA in FIG. 1 (a).
- the illustrated nanowire is a nanowire in which semiconductor particles are located inside the nanowire body (hereinafter referred to as “semiconductor particle-containing nanowire”).
- a semiconductor particle-encapsulating nanowire 1 shown in FIG. 1 has a structure in which a catalytic metal 2 is provided at one end of a nanowire body, and a plurality of semiconductor particles 4 are located inside and on the surface of the nanowire body 3.
- the semiconductor particles 4 are formed of a semiconductor material (second semiconductor material) different from the semiconductor material (first semiconductor material) forming the nanowire body. More specifically, the nanowire main body is formed of a first semiconductor material containing a plurality of elements, whereas the fine particles are at least 1 contained in the plurality of elements forming the first semiconductor material. It is formed from a second semiconductor material containing two elements.
- the nanowire body 3 is formed of, for example, a group IV semiconductor such as SiGe or SiGeC, a group III-V semiconductor such as GaAs, InP, or InAs, or a group II-VI semiconductor such as ZnS, ZnSe, or CdS. Can be done.
- the semiconductor fine particles 4 are formed of Si or Ge when the nanowire body 3 is formed of SiGe, for example.
- the catalytic metal 2 is formed from, for example, a metal atom such as gold, silver, copper, nickel, cobalt, iron, titanium, or an alloy or a composite material of these metal atoms and the material constituting the nanowire body 3. Can be done.
- the catalytic metal 2 can be removed after the nanowire is formed, and the final semiconductor particle-encapsulating nanowire may not have the catalytic metal 2.
- the average particle diameter of the semiconductor particles 4 is about lnm to lOOnm.
- the cross section of the semiconductor particles may have various shapes and layers including a force S having a shape typically close to a circle or an ellipse, and a polygon.
- the semiconductor particle 4 is single crystal or polycrystalline.
- the length of the semiconductor particle-encapsulating nanowire 1 is, for example, about 1 m to about 100 m, and its diameter is, for example, about 21 111 to 1111. Since the nanowire has such a thin wire shape, it is extremely difficult to perform microfabrication in order to add various functions.
- 1S In a preferred example of the present invention, a plurality of self-organized multiple wires are formed. At least a part of the semiconductor particles 4 are located inside the semiconductor nanowires, and the semiconductor particles 4 are covered with the first semiconductor material constituting the nanowire body 3 that can perform various functions. As a result, carriers such as electrons and holes can be efficiently injected into the semiconductor particles 4 through the nanowire body 3.
- FIGS. 2 (a) to 2 (d) are process diagrams showing the nanowire production method of the present invention.
- Nanowires can be grown by a known method, a vapor-liquid-solid (VLS) growth mechanism.
- VLS vapor-liquid-solid
- the catalytic metal 2 is disposed on an arbitrary substrate 5.
- the metal colloid solution can be arranged on the substrate 5 by a spin coating method or a metal thin film deposited by sputtering or vapor deposition to form particles.
- the substrate 5 on which the catalytic metal 2 is arranged is introduced into a chamber such as a CVD apparatus.
- a raw material gas 6 containing the elements constituting the nanowire is introduced into the chamber and kept at a predetermined pressure.
- This substrate 5 is heated to a desired temperature by heating with a lamp or heater. Keep the board.
- the source gas 6 is selectively decomposed only in the vicinity of the catalytic metal 2.
- the catalytic metal 2 reacts with the decomposed raw material gas 6 to form an alloy of the catalytic metal 2 and the elements constituting the nanowire.
- the elements constituting the nanowires generated by the decomposition of the source gas 6 are dissolved in the alloy of the catalytic metal 2 and the elements constituting the nanowires, and are supersaturated. It becomes a state. Alloy force between the supersaturated catalytic metal 2 and the elements constituting the nanowires The elements constituting the nanowires precipitate, and the precipitated elements aggregate to grow a crystalline semiconductor (nanowire body 3).
- the crystalline semiconductor needs to be composed of two or more elements by introducing a plurality of source gases.
- the particles 4 composed of the second semiconductor mainly containing the plurality of elements are formed inside or on the surface. Detailed heat treatment conditions performed for forming such semiconductor particles 4 will be described later.
- the nanowire of this embodiment is a nanowire in which germanium (Ge) particles are encapsulated in a silicon germanium nanowire (SiGe) body, it is hereinafter referred to as “Ge particle encapsulated Si Ge nanowire”.
- FIG. 3 is a photograph showing an example of a transmission electron microscope (TEM) image of the Ge particle-containing SiGe nanowire 110 in the present embodiment.
- Fig. 4 is a photograph showing an enlarged TEM image of part X in Fig. 3.
- Fig. 5 (a) shows the elemental content of the point2 region in Fig. 4, and
- Fig. 5 (b) shows the elemental content of the point 1 region in Fig.
- a Ge particle-encapsulating SiGe nanowire 110 shown in FIG. 3 has a structure in which a plurality of Ge particles 112 are positioned inside a SiGe nanowire body 111.
- a core-shell structure is formed in which the periphery of the SiGe nanowire body 111 is covered with a silicon oxide film having a thickness of about 30 nm.
- Ge particles 112 and SiGe nano particles Each of the main bodies 111 has a single crystal structure. From the results of the elemental analysis shown in Fig. 5, the particulate parts shown in Fig. 3 and Fig. 4 are composed of germanium elements, and the other regions are composed of silicon and germanium elements! I understand.
- a particle 112 composed of germanium element (Balta's band gap: 0.66 eV) having a particle diameter of about 10 nm to 20 nm inside the nanowire body 111 composed of SiGe, It has a self-organized structure.
- the band gap of SiGe in the Balta state varies depending on the composition ratio of Ge. For example, in the case of Si Ge, the band gap is about 0.
- the particle diameter of the Ge particles 112 can be formed by controlling the particle diameter in the range of about lnm to lOOnm in the manufacturing process described later.
- the position of Ge particles in the cross section perpendicular to the longitudinal direction of the SiGe nanowire body 111 is also controlled by the force S that is controlled in the manufacturing process.
- Ge particle inclusion in which fine Ge particles 112 of about lnm to lOOnm are self-organized on the surface of the nanowire body 111 SiGe nanowires 110 are expected to be widely applied to electronic devices such as transistors and light-emitting elements. .
- a silicon substrate 114 that functions as a growth substrate is prepared, and catalyst particles 115 are formed on the silicon substrate 114.
- the growth substrate 114 may be formed of another semiconductor material, an insulating material, or a refractory metal material, for example, a silicon oxide film or a silicon nitride film, as long as it has heat resistance to the heat treatment temperature during nanowire growth. It may be deposited.
- the plane orientation and resistivity of the growth substrate 114 may be arbitrarily set.
- the catalyst particles 115 are excellent in promoting decomposition of the raw material gas, and are used to promote the growth of the nanowire by forming a eutectic state with the elements constituting the nanowire. Since the diameter of the growing nanowire body 111 is approximately equal to the size of the catalyst particle 115, the size of the catalyst particle 115 is set so that a nanowire having a desired diameter can be obtained. Usually, the diameter of the catalyst particle 115 is from lnm to 10000 nm, preferably in the range of 5 nm to 1 OOnm.
- a known method can be used as a method of forming the catalyst particles 115 on the growth substrate 114.
- a thin film of a catalytic metal is formed on the surface of the growth substrate 114 using a known thin film forming apparatus such as a sputtering method or a vapor deposition method. Thereafter, the catalytic metal thin film may be self-aggregated by heat-treating the catalytic metal thin film.
- an EB vapor deposition method may be used to deposit a gold thin film of about 0.5 nm force and about lOnm, and heat treatment may be performed at 500 ° C for about 30 minutes to 3 hours. . Since the diameter of the gold particles depends on the thickness of the gold thin film and the heat treatment conditions, the thickness of the gold thin film is adjusted so that the desired gold particle diameter can be obtained. In this embodiment, a gold thin film having a thickness of about 2 nm is deposited, and heat treatment is performed at 500 ° C. for 10 minutes in a vacuum.
- the growth substrate 114 on which the catalyst particles 115 are formed is inserted into a chamber such as a CVD apparatus. Then, as shown in FIG. 6 (b), a source gas 116 containing silicon and germanium elements is introduced into the chamber, maintained at a predetermined pressure, and the growth substrate 114 is heated at a temperature lower than the temperature at which the source gas 116 decomposes. To do. As a result, the elements (elements constituting the nanowire) in the raw material gas 116 decomposed on the surface of the catalyst particles 115 react with the catalyst particles 115 to form an alloy thereof.
- Silicon source gases such as HCI and SiCl
- gels such as GeH, GeH, GeHCI, and GeCl
- Manium source gas can be used.
- an ultra-high vacuum CVD apparatus is used as the CVD apparatus, and the substrate temperature is set between 350 ° C. and 500 ° C. Si H gas and GeH gas are used as source gas,
- H gas, He gas, and Ar gas may be simultaneously introduced into the growth chamber as seed gases. Under such conditions, for example, the force S is used to grow SiGe nanowires at a growth rate of 0.05 ⁇ m / min to 10 ⁇ m / min.
- silicon and germanium which are elements constituting the nanowire, are deposited.
- the deposited silicon and germanium aggregate and the crystalline semiconductor becomes a wire. Grows into a shape.
- the Ge content (Ge composition) of the SiGe nanowire body 111 is proportional to the total flow rate of Si H gas and GeH gas.
- Si H gas flow rate GeH gas
- the SiGe nanowire body 111 is thermally oxidized under a predetermined condition to be described later.
- the force S can be formed to form a Ge particle-encapsulating SiGe nanowire in which Ge particles 112 are encapsulated.
- the thermal oxidation proceeds from the outer peripheral surface of the SiGe nanowire body 111 toward the center part, and thus a structure in which the surface of the SiGe nanowire body 111 is covered with an oxide film is formed.
- the conditions of thermal oxidation only the Si element in the SiGe nanowire body 111 can be selectively oxidized, and as a result, the periphery of the SiGe nanowire body 11 1 can be covered with a silicon oxide film. .
- the Ge element in SiGe can be segregated at the interface between the SiGe nanowire body 111 and the silicon oxide film.
- a Ge particle-encapsulating SiGe nanowire 110 can be obtained.
- the force by which Ge particles 112 located inside the SiGe nanowire body 111 are formed in a self-organized manner by the thermal oxidation described above is segregated at the interface between the SiGe nanowire body 111 and the silicon oxide film.
- the above-described thermal oxidation conditions may be appropriately controlled. Specifically, for example, high-temperature high-speed oxidation may be performed at 1100 ° C. for 5 minutes in an oxygen atmosphere.
- the particle size and density of the Ge particles 112 can be controlled by adjusting the thermal oxidation conditions and the structure of the SiGe nanowire body 111.
- the particle size and density of the Ge particles 112 can be increased as the composition ratio of Ge in the SiGe nanowire body 111 is increased.
- the particle size and density of the Ge particles 112 can be increased as the oxygen concentration and the thermal oxidation temperature are increased in the oxidizing atmosphere gas.
- FIG. 15 is a graph showing Raman spectra of samples thermally oxidized at different temperatures.
- Profile (a) shown in FIG. 15 is a Raman spectrum of SiGe nanowires that are thermally oxidized! /,! /.
- profiles (b), (c), and (d) shown in FIG. 15 are Raman spectra of SiGe nanowires thermally oxidized at 900 ° C., 1000 ° C., and 1100 ° C., respectively.
- the thermal oxidation was performed by heating the sample for 4 minutes in an atmosphere containing oxygen by the RTO method (Rapid Thermal Oxidation).
- the two peaks shown in profile (d) are the Ge peaks in SiGe nanowires, considering that Ge particles were formed when heat treatment was performed at 1100 ° C. This is probably due to the particles and other regions. In other words, it can be said that in the sample that was thermally oxidized at 1100 ° C, the Ge state in the Ge particles and the Ge state in other regions could be clearly distinguished.
- FIG. 16 is a graph showing the relationship between the thermal oxidation temperature of the SiGe nanowires and the half width of the Ge-Ge mode peak. As shown in Fig. 16, when the thermal oxidation temperature exceeds 1000 ° C, the full width at half maximum increases greatly. From the above results, in order to form Ge particles, thermal oxidation is preferably performed at a temperature exceeding 1000 ° C., more preferably at a temperature of 1100 ° C. or more.
- the heating rate for thermal oxidation is also high. This is because the higher the rate of temperature rise, the fewer the regions that are oxidized during the temperature rise process, and the more regions that are oxidized after the temperature rise is completed. [0063] (About oxidation time)
- FIG. 17 is a graph showing the XRD spectrum of SiGe nanowires.
- the peaks of SiGe nanowires are observed around 27 ° and 47 °, the 27 ° peak shows the signal due to diffraction from the (11 1) plane, and the 47 ° peak shows the signal due to diffraction from the (220) plane.
- Profile (a) is the XRD spectrum of the sample that was thermally oxidized at 1100 ° C for 6 minutes
- profile (b) is the XRD spectrum of the sample that was not thermally oxidized (as depo sited).
- profile (a) the peak position is shifted to the lower angle side and the peak width is wider than profile (b).
- FIG. 18 is a graph showing how the half width of the XRD spectrum changes when the oxidation time is changed.
- the horizontal axis in Fig. 18 represents the oxidation time for the SiGe nanowires, and the vertical axis represents the half-width value of the sample that had been subjected to thermal oxidation at 1100 ° C. Show the value divided by the price range (half-width / half-width (as deposited))!
- Profile (c) shows the half width of the signal due to diffraction from the (220) plane, and profile (d) shows the half width of the signal due to diffraction from the (111) plane. As shown in FIG.
- FIG. 19 is a graph showing the relationship between the distribution width of the Ge composition in the SiGe nanowire and the oxygen concentration in the thermal oxidation atmosphere.
- the Ge composition distribution width was calculated as follows based on the Raman spectrum measurement results. First, the wavenumber of the Raman spectrum was substituted into each ⁇ of the following three empirical equations (1) to (3), and the values of x, y, and z were calculated. X, y, and z are the wave numbers of Si-Si, Si_Ge, and Ge_Ge, respectively. ( ⁇ ) Force, Ge composition ratio (at%) calculated.
- the composition of Ge in the SiGe nanowire is uniform, the values of x, y, and z are equal, and the greater the variation in these values, the greater the nonuniformity of the Ge composition.
- the distribution of Ge composition can be calculated from the value of z.
- the distribution width of the Ge composition on the vertical axis shown in FIG. 19 is a value obtained by subtracting the minimum value from the maximum value of x, y, and z.
- the horizontal axis of FIG. 19 indicates the ratio (%) of the partial pressure of oxygen to the total pressure of the atmospheric gas.
- heat treatment at 800 ° C to 1100 ° C can be performed in an inert gas atmosphere such as nitrogen or in a vacuum.
- an inert gas atmosphere such as nitrogen or in a vacuum.
- the semiconductor deposited by the thermal oxidation treatment may move toward the center of the nanowire and grow into fine particles during the thermal oxidation treatment. In this case, it is not necessary to add a special heat treatment after the thermal oxidation treatment.
- the nanowire surface is smoothed. This is because when the nanowire surface is smooth, the surface defect density is reduced and the light emission characteristics or light reception characteristics are improved.
- the second semiconductor material is composed of a part of the elements constituting the first semiconductor material.
- the first characteristic point is that it forms fine particles.
- the second feature is that at least a part of the fine particles is located inside the nanowire.
- the silicon oxide film formed around the SiGe nanowire body 111 may be removed after the oxidation treatment. Further, the catalyst particles 115 may be removed before the oxidation treatment. At the time of the oxidation treatment! /, The catalyst particles 115 come into contact with the nanowire body 111! /, And the catalyst particles 115 constitute! /, And the metal is formed inside the nanowire body 111 during the thermal oxidation treatment. This is because they may diffuse and deteriorate or deteriorate the semiconductor characteristics of the nanowire body 111. If the catalyst particles 115 are removed at the time of the oxidation treatment! /, The metal constituting the catalyst particles 115 can be prevented from diffusing into the nanowire body 111.
- the material constituting the nanowire body can be changed by changing the source gas.
- SiGeC silicon germanium carbon
- silane gas, germane gas, or methylsilane may be used as a source gas.
- the semiconductor particles located inside the nanowire body 111 can be formed without adding a special manufacturing process other than heat treatment, and the particle size and particle density are also determined depending on thermal oxidation conditions and nanowires. It can be controlled by changing the structure. According to this embodiment, fine Ge particles can be formed in the nanowire body using a known nanowire growth apparatus, and density control and particle size are possible, so that electronic devices such as transistors and light-emitting elements can be used. Application to is expected.
- This light-emitting element includes a light-emitting region formed from semiconductor particle-containing nanowires.
- the nanowire of this embodiment has a heterostructure, although a semiconductor particle-encapsulated nanowire and a contact nanowire that does not encapsulate a semiconductor particle are connected.
- such a nanowire is referred to as a “hetero nanowire”.
- FIG. 7 (a) is a cross-sectional view showing the structure of the hetero nanowire 202 in the present embodiment
- FIG. 7 (b) is a perspective view showing a nanowire light-emitting element 201 using the hetero nanowire 202.
- the structure of the nanowire light emitting device 201 will be described.
- the contact nanowire 206 is connected to both ends of the semiconductor particle-containing nanowire 205.
- the contact nanowires 206 at both ends may be doped with impurities in order to form a good contact with the electrode.
- a group III element such as boron or a group V element such as phosphorus or arsenic is 1 X 10 18 atoms / cm— 3 to 1 X 10 2 ° Doped about atom s / cm 3
- the nanowire light-emitting element 201 shown in Fig. 7 (b) includes a first electrode 204a and a second electrode 204b that are in contact with the hetero nanowire 202, respectively, and a substrate 203 that supports them.
- the first electrode 204a and the second electrode 204b are in contact with the contact nanowire 206 to form an electrical contact.
- the first electrode 204a and the second electrode 204b function as an anode or a cathode.
- a voltage is applied to each electrode, holes are injected from the anode and electrons are injected from the cathode into the semiconductor particle-containing nanowire 205, respectively.
- These injected carriers recombine in the semiconductor particle-encapsulating nanowire 205, and light emission occurs.
- FIG. 8 is a graph showing the relationship between the Ge particle diameter and the band gap. As the Ge particle size decreases, the band gap increases due to the quantum size effect, and light emission in the visible region becomes possible. Therefore, the emission wavelength can be controlled by controlling the particle size of the Ge particles.
- various substrates such as a polyimide substrate such as an aromatic ester, a glass substrate, and a sapphire substrate can be used.
- the first electrode 204a and the second electrode 204b are made of a metal such as titanium, gold, aluminum, or nickel, a conductive polymer, an alloy of a semiconductor material such as polysilicon or titanium silicide, and a metal. Can be used.
- the nanowire light emitting device of this embodiment light emission is generated through semiconductor particles having different band gaps formed in a self-organized manner in the nanowire. Since the particle size and density of the semiconductor particles can be controlled by the above-described method, it is possible to realize uneven emission intensity and sharp emission spectrum.
- the force S which is the same as the method described in the first embodiment, differs from the method in the first embodiment in that a hetero nanowire structure is realized by switching the source gas during the growth of the nanowire. .
- a silicon substrate that functions as a growth substrate is prepared, and catalyst particles are formed on the silicon substrate.
- the catalyst particles can be formed by the same method as in the first embodiment.
- the silicon substrate on which the catalyst particles are formed is inserted into a chamber such as a CVD apparatus. Then, a source gas is introduced into the chamber and maintained at a predetermined pressure, and the silicon substrate is heated at a temperature lower than the temperature at which the source gas decomposes. As a result, on the silicon substrate, the elements constituting the nanowires in the raw material gas decomposed on the surface of the catalyst particles react with the catalyst particles to form these alloys.
- Si H gas is introduced to decompose the source gas.
- Silicon which is an element constituting the nanowire, precipitates, and the precipitated silicon aggregates to grow a crystalline semiconductor layer, thereby forming an S wire.
- This S wire will function as a nanowire for contact.
- SiH gas and germanium element material such as GeH gas are introduced as raw material gas
- the growth temperature may be changed during the growth of the Si nanowire.
- the SiGe nanowire is grown to a predetermined length, the silicon nanowire is hetero-growth by switching to the silicon source gas again. In this way, the force S can be obtained to obtain the hetero nanowire shown in Fig. 7 (a).
- the nanowire light-emitting element can be manufactured by a known method except that the above-described hetero-nanowire is used. Hereinafter, the manufacturing method of the nanowire light emitting device in the present embodiment will be described.
- FIG. 9 (a) to FIG. 9 (c) are diagrams showing an example of the method for manufacturing the nanowire light-emitting element in the present embodiment.
- a region 207 in which nanowires are arranged on the main surface of the substrate 203 is defined.
- a hydrophilic film is deposited on the region 207 where the nanowires are to be arranged using known photolithography.
- the hetero nanowire 202 is disposed in the region 207 where the nanowire is to be disposed.
- the hetero nanowire 202 is peeled off from the growth substrate (not shown in FIG. 9) and dispersed in a solution.
- a method of peeling the hetero nanowire 202 from the growth substrate for example, a method of mechanically peeling the growth substrate by irradiating the growth substrate or a method of thinly etching the surface of the growth substrate may be used. ,.
- the solvent used in the dispersion may be an aqueous solution, an organic solvent, or a mixture of water and an organic solvent.
- the organic solvent include alcohols such as ethanol, propanol, pentanol, hexanol, and ethylene glycol, esters such as ethylene glycol monomethyl ether, ketones such as methyl ethyl ketone, and solvents such as hexane and octane.
- a solvent such as lucan, tetrahydrofuran, or black mouth form may be used.
- a mixed liquid of water and an organic solvent a mixed liquid of water and alcohol, a mixed liquid of water and tetrahydrofuran, or the like can be used.
- a mold having a groove having a desired shape on its surface is brought into close contact with the upper surface of the substrate 203, and the above-mentioned dispersion is caused to flow in this groove (flow method).
- flow method a flow method
- the position and shape of the hetero nanowire 202 can be controlled by the groove of the mold, and the nanowire direction can be oriented in the mold method by the flow of liquid. Note that it is possible to dispose the hetero nanowire 202 at a desired position on the substrate 203 by using a known method other than the flow method, for example, a transfer method.
- the first electrode 204 a and the gate second electrode 204 b are formed on the main surface of the substrate 203.
- These electrodes can be formed, for example, by depositing a gate metal using a known film forming apparatus such as sputtering or vapor deposition and then patterning the metal film by photolithography and etching techniques. it can. As another method, a lift-off method can be used.
- a plurality of nanowires functioning as a light emitting region can be grown on a growth substrate and then placed on a substrate made of any other material by a coating process, It is also possible to realize a light emitting element arranged on a low plastic substrate.
- nanowire of this embodiment there are a plurality of heterostructures formed by the Ge particle-encapsulated nanowire described in Embodiment 1 and the nanowire in which Ge particles are not encapsulated in one nanowire. Such nanowires are called “multi-Ge particle-containing nanowires”.
- FIG. 10 is a cross-sectional view showing the structure of the multi-Ge particle-containing nanowire 301 in the present embodiment.
- FIG. 11 is a diagram showing a method of manufacturing a nanowire according to this embodiment.
- a multi-Ge particle-containing nanowire 301 shown in FIG. 10 includes a region 303 where a plurality of Ge particles exist, a region where no Ge particles exist! /, And a region 302! /.
- Region where Ge particles exist 303 Is constituted by the nanowires in Embodiment 1, and the feature of this embodiment is that there are a plurality of heterostructures with the region 302 where Ge particles are not present.
- the region where Ge particles do not exist is formed of a semiconductor material such as Si, Ge, GaAs, or GaN.
- the axial size of the region where Ge particles are present and the region where Ge particles are not present can be controlled on the nanometer order during nanowire growth. Further, as described above, in the Ge particle-encapsulated nanowire, it is possible to change the particle size and density of the Ge particle by adjusting the Ge composition ratio in the nanowire. Such multi-GeSi nanowires, in which fine Ge particles of several nanometers size are encapsulated, are expected to be widely applied to electronic devices such as transistors, light-emitting elements, light-receiving elements, and memories.
- a substrate 307 functioning as a growth substrate is prepared, and catalyst particles 308 are formed on the substrate 307.
- a formation method the method described in Embodiment 1 may be used.
- the substrate 307 on which the catalyst particles 308 are formed is inserted into a chamber such as a CVD apparatus. Then, as shown in FIG. 11 (b), the source gas 308 is introduced into the chamber, the pressure is maintained at a predetermined pressure, and the substrate 307 is heated at a temperature lower than the temperature at which the source gas 308 decomposes. As a result, the catalyst particles 306 react with the elements constituting the nanowires in the raw material gas 308 decomposed on the surface of the catalyst particles 306 to form an alloy thereof.
- the nanowires can be subjected to thermal oxidation to form multi-Ge particle-encapsulating nanowires.
- the thermal oxidation treatment conditions may be set according to the particle size and density of Ge particles.
- the nanowire light-emitting element 311 shown in FIG. 12 uses the multi-Ge particle-encapsulated hetero-nanowire 301 of this embodiment as a light-emitting region.
- the structure of the nanowire light-emitting element is the same as that of the nanowire light-emitting element of Embodiment 3.
- This nanowire light-emitting device can be manufactured in the same manner as the method for manufacturing the nanowire light-emitting device of Embodiment 2.
- the density and particle size of Ge particles can be controlled more strictly than the nanowire of Embodiment 2, and it is possible to obtain uneven emission intensity and sharp emission spectrum. It becomes. Furthermore, since Ge particles having different particle diameters can be formed in one nanowire, the emission wavelength can be varied by controlling the applied voltage.
- nanowire light receiving element a light receiving element using nanowires according to the present invention
- the nanowire used in the present embodiment is a nanowire obtained by doping impurities into the Si nanowire portion of the heteronanowire in the second embodiment (hereinafter referred to as “Ge particle inclusion doped heteronanowire”).
- FIG. 13 (a) is a structural diagram showing a Ge particle inclusion doped hetero nanowire according to the present embodiment
- FIG. 13 (b) shows a nanowire light emitting device 405 using a Ge particle inclusion doped hetero nanowire 401. It is a perspective view.
- Ge particle inclusion doped hetero nanowire 401 shown in Fig. 13 (a) has p-i-n conductivity with p-Si nanowire 403 and n-Si nanowire 404 connected to both ends of Ge particle inclusion nanowire 402. It has a type of heterostructure.
- the p—Si nanowire 403 and the n—Si nanowire 404 are composed of group III elements such as boron and group V elements such as phosphorus and arsenic 1 X 10 18 atoms / cm— 3 to 1 X 10 2 . Doped about 3 atoms / cm- 3 .
- the nanowire light-receiving element 405 shown in Fig. 13 (b) includes a first electrode 407 and a second electrode 408 that are in contact with Ge particle-containing hetero nanowires 401, respectively, and a substrate 4006 that supports these electrodes. I have.
- the first electrode 407 and the second electrode 408 are respectively p-Si nanowires. 403 and n-Si nanowire 404 are in contact with each other to form an electrical contact.
- the substrate 403 various substrates such as a polyimide substrate such as an aromatic ester, a glass substrate, and a sapphire substrate can be used.
- the materials of the first electrode 404a and the second electrode 404b include metals such as titanium, gold, aluminum, and nickel, conductive polymers, alloys of semiconductor materials such as polysilicon and titanium silicide, and metals. Use with power S.
- the nanowire light-receiving device of the present embodiment can be manufactured by the same manufacturing method as that of the nanowire light-emitting device of the second embodiment.
- a light receiving element that covers a wide wavelength region from the visible region to the near infrared region can be formed on an arbitrary substrate.
- the length and diameter of nanowires can be accurately controlled over a wide range from nanometer to micron order, increasing the degree of freedom in device design.
- SiC fine particles can be formed in the nanowires.
- heat treatment of the nanowires at a temperature higher than the growth temperature can form fine particles.
- a set of elements that can form a stable structure (compound type) among the elements that compose a compound semiconductor it is possible to form fine particles composed of such sets of elements by heat treatment. become.
- a GaMnAs nanowire is grown at a relatively low temperature / temperature (for example, 300 ° C or lower) and then heat-treated at, for example, about 600 ° C, hexagonal MnAs fine particles are formed in GaAs.
- TMR tunnel magnetoresistance
- MRAM magnetoresistive random access memory
- the nanowire according to the present invention can be produced by a simple production process.
- the present invention can be applied to electronic devices such as a star light emitting element, a micro device, and the like.
Abstract
Description
Claims
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JP2011529637A (ja) * | 2008-07-31 | 2011-12-08 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | 光信号を増幅、変調及び検出するためのナノワイヤの光学的ブロック・デバイス |
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Families Citing this family (12)
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004067433A (ja) * | 2002-08-06 | 2004-03-04 | National Institute For Materials Science | シリコンゲルマニウムナノワイヤーとその製造方法 |
JP2005532181A (ja) * | 2002-07-08 | 2005-10-27 | ビーティージー・インターナショナル・リミテッド | ナノ構造体およびその製造方法 |
JP2006140293A (ja) * | 2004-11-11 | 2006-06-01 | Matsushita Electric Ind Co Ltd | 半導体微小構造体及びその製造方法 |
JP2006225258A (ja) * | 2005-02-16 | 2006-08-31 | Samsung Electronics Co Ltd | シリコンナノワイヤおよびその製造方法 |
JP2007050500A (ja) * | 2005-08-15 | 2007-03-01 | Agilent Technol Inc | 半導体ナノ構造及びそれを製造する方法 |
JP2007070136A (ja) * | 2005-09-05 | 2007-03-22 | Kyoto Univ | チタニアナノロッドとその製造方法、及びこのチタニアナノロッドを用いた色素増感太陽電池 |
JP2007184566A (ja) * | 2005-12-06 | 2007-07-19 | Canon Inc | 半導体ナノワイヤを用いた半導体素子、それを用いた表示装置及び撮像装置 |
JP2007294908A (ja) * | 2006-03-30 | 2007-11-08 | Matsushita Electric Ind Co Ltd | ナノワイヤトランジスタ及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ITBO990552A1 (it) | 1999-10-14 | 2001-04-16 | Gd Spa | Stecca rigida di pacchetti di sigarette parzialmente apribile per esposizione . |
EP1374309A1 (en) | 2001-03-30 | 2004-01-02 | The Regents Of The University Of California | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
JP2004535066A (ja) | 2001-05-18 | 2004-11-18 | プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ | ナノスケールワイヤ及び関連デバイス |
US7087920B1 (en) * | 2005-01-21 | 2006-08-08 | Hewlett-Packard Development Company, L.P. | Nanowire, circuit incorporating nanowire, and methods of selecting conductance of the nanowire and configuring the circuit |
US7439560B2 (en) | 2005-12-06 | 2008-10-21 | Canon Kabushiki Kaisha | Semiconductor device using semiconductor nanowire and display apparatus and image pick-up apparatus using the same |
EP1867762B1 (en) * | 2006-06-13 | 2008-09-10 | Sabanci Üniversitesi | Carbon nanofibers containing catalyst nanoparticles |
US7718995B2 (en) * | 2006-06-20 | 2010-05-18 | Panasonic Corporation | Nanowire, method for fabricating the same, and device having nanowires |
-
2007
- 2007-11-29 JP JP2008517246A patent/JP4167718B2/ja not_active Expired - Fee Related
- 2007-11-29 US US12/518,821 patent/US8198622B2/en active Active
- 2007-11-29 WO PCT/JP2007/073034 patent/WO2008072479A1/ja active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005532181A (ja) * | 2002-07-08 | 2005-10-27 | ビーティージー・インターナショナル・リミテッド | ナノ構造体およびその製造方法 |
JP2004067433A (ja) * | 2002-08-06 | 2004-03-04 | National Institute For Materials Science | シリコンゲルマニウムナノワイヤーとその製造方法 |
JP2006140293A (ja) * | 2004-11-11 | 2006-06-01 | Matsushita Electric Ind Co Ltd | 半導体微小構造体及びその製造方法 |
JP2006225258A (ja) * | 2005-02-16 | 2006-08-31 | Samsung Electronics Co Ltd | シリコンナノワイヤおよびその製造方法 |
JP2007050500A (ja) * | 2005-08-15 | 2007-03-01 | Agilent Technol Inc | 半導体ナノ構造及びそれを製造する方法 |
JP2007070136A (ja) * | 2005-09-05 | 2007-03-22 | Kyoto Univ | チタニアナノロッドとその製造方法、及びこのチタニアナノロッドを用いた色素増感太陽電池 |
JP2007184566A (ja) * | 2005-12-06 | 2007-07-19 | Canon Inc | 半導体ナノワイヤを用いた半導体素子、それを用いた表示装置及び撮像装置 |
JP2007294908A (ja) * | 2006-03-30 | 2007-11-08 | Matsushita Electric Ind Co Ltd | ナノワイヤトランジスタ及びその製造方法 |
Non-Patent Citations (1)
Title |
---|
WU Y. ET AL.: "Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires", NANO LETTERS, vol. 2, no. 2, 13 February 2002 (2002-02-13), pages 83 - 86, XP055115359, DOI: doi:10.1021/nl0156888 * |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011529637A (ja) * | 2008-07-31 | 2011-12-08 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | 光信号を増幅、変調及び検出するためのナノワイヤの光学的ブロック・デバイス |
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JP2013540679A (ja) * | 2010-08-27 | 2013-11-07 | ザ リサーチ ファウンデーション オブ ステイト ユニバーシティ オブ ニューヨーク | 電池電極用の分枝状ナノ構造物 |
JP2013128107A (ja) * | 2011-12-19 | 2013-06-27 | Palo Alto Research Center Inc | ナノワイヤのシードを横方向に結晶化することにより生成される単結晶シリコンの薄膜トランジスタ(tft) |
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CN107004727A (zh) * | 2014-11-07 | 2017-08-01 | 索尔伏打电流公司 | 密堆积胶体晶体膜的壳赋能(shell‑enabled)垂直对准和精密组装 |
JP2017539085A (ja) * | 2014-11-07 | 2017-12-28 | ソル ヴォルテイックス エービーSol Voltaics Ab | シェルで可能にされた垂直整列、および密に詰まったコロイド状結晶膜の精密集合体 |
US10692719B2 (en) | 2014-11-07 | 2020-06-23 | Alignd Systems Ab | Shell-enabled vertical alignment and precision-assembly of a close-packed colloidal crystal film |
US10919074B2 (en) | 2016-06-21 | 2021-02-16 | Alignedbio Ab | Method for transferring nanowires from a fluid to a substrate surface |
US11364520B2 (en) | 2016-06-21 | 2022-06-21 | Alignedbio Ab | Method for transferring nanowires from a fluid to a substrate surface |
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US20100012921A1 (en) | 2010-01-21 |
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JP4167718B2 (ja) | 2008-10-22 |
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