JP2014209587A - マルチヘテロ接合ナノ粒子、その製造方法および同ナノ粒子を含む物品 - Google Patents
マルチヘテロ接合ナノ粒子、その製造方法および同ナノ粒子を含む物品 Download PDFInfo
- Publication number
- JP2014209587A JP2014209587A JP2014050832A JP2014050832A JP2014209587A JP 2014209587 A JP2014209587 A JP 2014209587A JP 2014050832 A JP2014050832 A JP 2014050832A JP 2014050832 A JP2014050832 A JP 2014050832A JP 2014209587 A JP2014209587 A JP 2014209587A
- Authority
- JP
- Japan
- Prior art keywords
- end cap
- nanoparticle
- dimensional
- heterojunction
- node
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002105 nanoparticle Substances 0.000 title claims abstract description 230
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 50
- 239000000203 mixture Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000002243 precursor Substances 0.000 claims description 42
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 31
- 229910004613 CdTe Inorganic materials 0.000 claims description 5
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 13
- 239000007924 injection Substances 0.000 abstract description 13
- 239000000243 solution Substances 0.000 abstract description 13
- 239000002800 charge carrier Substances 0.000 abstract description 7
- 239000002159 nanocrystal Substances 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 39
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 35
- 239000002073 nanorod Substances 0.000 description 33
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical group C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 29
- 238000006243 chemical reaction Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 16
- 239000011669 selenium Substances 0.000 description 15
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 239000002096 quantum dot Substances 0.000 description 10
- 239000011541 reaction mixture Substances 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 9
- 239000011701 zinc Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 239000011258 core-shell material Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 5
- 238000001194 electroluminescence spectrum Methods 0.000 description 5
- 239000012299 nitrogen atmosphere Substances 0.000 description 5
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 5
- 238000005424 photoluminescence Methods 0.000 description 5
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 5
- VOQMPZXAFLPTMM-UHFFFAOYSA-N 4-(4-chlorophenoxy)piperidine Chemical compound C1=CC(Cl)=CC=C1OC1CCNCC1 VOQMPZXAFLPTMM-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- XTAZYLNFDRKIHJ-UHFFFAOYSA-N n,n-dioctyloctan-1-amine Chemical compound CCCCCCCCN(CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-N 0.000 description 4
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 4
- 229940049964 oleate Drugs 0.000 description 4
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 3
- 229910017115 AlSb Inorganic materials 0.000 description 3
- 229910005542 GaSb Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910004262 HgTe Inorganic materials 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 229910007709 ZnTe Inorganic materials 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 239000002071 nanotube Substances 0.000 description 3
- -1 nanowhiskers Substances 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 2
- LGDCSNDMFFFSHY-UHFFFAOYSA-N 4-butyl-n,n-diphenylaniline Polymers C1=CC(CCCC)=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 LGDCSNDMFFFSHY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910002665 PbTe Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical group [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 239000002074 nanoribbon Substances 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 239000004054 semiconductor nanocrystal Substances 0.000 description 2
- 229910052950 sphalerite Inorganic materials 0.000 description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 description 1
- ODJQKYXPKWQWNK-UHFFFAOYSA-N 3,3'-Thiobispropanoic acid Chemical compound OC(=O)CCSCCC(O)=O ODJQKYXPKWQWNK-UHFFFAOYSA-N 0.000 description 1
- 229910005543 GaSe Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910017680 MgTe Inorganic materials 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000010908 decantation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- GJWAEWLHSDGBGG-UHFFFAOYSA-N hexylphosphonic acid Chemical compound CCCCCCP(O)(O)=O GJWAEWLHSDGBGG-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- SYSQUGFVNFXIIT-UHFFFAOYSA-N n-[4-(1,3-benzoxazol-2-yl)phenyl]-4-nitrobenzenesulfonamide Chemical class C1=CC([N+](=O)[O-])=CC=C1S(=O)(=O)NC1=CC=C(C=2OC3=CC=CC=C3N=2)C=C1 SYSQUGFVNFXIIT-UHFFFAOYSA-N 0.000 description 1
- FTMKAMVLFVRZQX-UHFFFAOYSA-N octadecylphosphonic acid Chemical compound CCCCCCCCCCCCCCCCCCP(O)(O)=O FTMKAMVLFVRZQX-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- BVQJQTMSTANITJ-UHFFFAOYSA-N tetradecylphosphonic acid Chemical compound CCCCCCCCCCCCCCP(O)(O)=O BVQJQTMSTANITJ-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- LPEBYPDZMWMCLZ-CVBJKYQLSA-L zinc;(z)-octadec-9-enoate Chemical compound [Zn+2].CCCCCCCC\C=C/CCCCCCCC([O-])=O.CCCCCCCC\C=C/CCCCCCCC([O-])=O LPEBYPDZMWMCLZ-CVBJKYQLSA-L 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/068—Nanowires or nanotubes comprising a junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/122—Single quantum well structures
- H01L29/127—Quantum box structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
- Y10S977/95—Electromagnetic energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
【解決手段】第2の末端106が第1の末端104と対向する、前記第1の末端および前記第2の末端を有する一次元の半導体性ナノ粒子102と、第1の半導体を備える第1のノードであって、接触点で第1のヘテロ接合103を生じる前記一次元の半導体性ナノ粒子のラジアル表面と接触する、第1のノードと、第2の半導体を備える第2のノードであって、接触点で第2のヘテロ接合109を生じる前記一次元の半導体性ナノ粒子のラジアル表面と接触する、第2のノードと、を備える半導体性ナノ粒子であって、前記第1のヘテロ接合は前記第2のヘテロ接合と組成的に異なる、半導体性ナノ粒子である。
【選択図】図1A
Description
MαLd (1)
式(1)中、Mは、前記粒子の大きさであり、および、Lは、前記粒子の長さであり、および、dは、前記粒子の次元数を決定する指数である。例えば、d=1の場合、前記粒子の大きさは、前記粒子の長さに直接比例し、前記粒子は、一次元のナノ粒子と呼ばれる。d=2の場合、前記粒子は、2次元の物体、例えば、プレートである。一方、d=3は、三次元の物体、例えば、円筒または球を規定する。前記一次元のナノ粒子(d=1の粒子)としては、ナノロッド、ナノチューブ、ナノワイヤ、ナノウィスカー、ナノリボン等があげられる。一実施形態では、前記一次元のナノ粒子は、湾曲していてもよいし、または、波状でもよい(曲がりくねるように)、すなわち、1と1.5との間であるdの値を有してもよい。
本実施例は、前記不動態化されたナノ粒子の製造を説明する。反応を、N2雰囲気下において、標準的なシュレンクラインにおいて行った。技術的な等級のトリオクチルホスフィン酸化物(TOPO)(90%)、技術的な等級のトリオクチルホスフィン(TOP)(90%)、技術的な等級のオクチルアミン(OA)(90%)、技術的な等級のオクタデセン(ODE)(90%)、CdO(99.5%)、酢酸Zn(99.99%)、S粉末(99.998%)、およびSe粉末(99.99%)を、Sigma Aldrichから取得した。N−オクタデシルホスホン酸(ODPA)を、PCI Synthesisから取得した。ACS等級のクロロホルムおよびメタノールを、Fischer Scientificから取得した。材料は、そのまま使用した。
まず、2.0グラム(g)(5.2ミリモル(mmol))のTOPO、0.67g(2.0mmol)のODPAおよび0.13g(2.0mmol)のCdOを、50mlの三頸丸底フラスコに準備した。前記混合物を、真空下において、150℃で30分間脱気し、次いで、攪拌下において、350℃に加熱した。Cd−ODPA錯体を350℃で形成したことで、前記フラスコにおける褐色の溶液は、約1時間後に光学的に無色透明になった。次いで、前記溶液を、150℃で10分間脱気して、錯体の副産物、例えば、O2およびH2Oを除去した。脱気後、前記溶液を、N2雰囲気下において、350℃に加熱した。1.5ミリリットル(ml)のTOPに溶解した16ミリグラム(mg)(0.5mmol)のSを含む硫黄(S)前駆体を、シリンジで前記フラスコ内に、急速に注入した。その結果として、前記反応混合物が、前記CdSの成長が行われる330℃に冷却された。15分後、前記CdSナノロッドの成長を、CdSナノロッド上でのCdSeの成長が行われる250℃に冷却することにより終了させた。一定分量の前記CdSナノロッドを取り出し、メタノールおよびブタノールでの沈殿により、分析用に洗浄した。前記CdS/CdSeヘテロ構造体を、前記同じ反応フラスコにSe前駆体を添加することにより形成し、以下に記載のようにN2雰囲気下で維持した。
CdSナノロッドの形成に続けて、1.0mlのTOPに溶解した20mg(0.25mmol)のSeを含むSe前駆体を、シリジンポンプにより、1時間あたりに4ml(ml/h)の速度で、250℃でゆっくり注入した(合計注入時間約15分)。次いで、前記反応フラスコを、エアジェットにより急速に冷却する前に、前記反応混合物を、250℃でさらに5分間経過させた。一定分量のCdS/CdSeナノロッドヘテロ構造体を取り出し、メタノールおよびブタノールでの沈殿により、分析用に洗浄した。最終的な溶液を、クロロホルムに溶解し、毎分2000回転(rpm)で遠心した。沈殿物を、クロロホルムに再度溶解し、溶液として保存した。前記溶液を10倍に希釈した場合、前記CdSバンド−エッジ吸収ピークは、0.75に相当する。
CdS/CdSe/ZnSe二重ヘテロ接合ナノロッドを、CdS/CdSeナノロッドヘテロ構造体上に、ZnSeを成長させることにより合成した。Zn前駆体については、6mlのODE、2mlのOAおよび0.18g(1.0mmol)の酢酸Znを、100℃で30分間脱気した。前記混合物を、N2雰囲気下において、250℃に加熱した。この結果として、1時間後にオレイン酸Znが形成された。50℃に冷却した後、2mlの予め調製されたCdS/CdSe溶液を、オレイン酸Zn溶液内に注入した。前記混合物におけるクロロホルムを、真空下において30分間蒸発させた。ZnSeの成長を、1.0mlのTOPに溶解した20mg(0.25mmol)のSeを含むSe前駆体をゆっくり注入することにより、250℃で開始させた。CdS/CdSeナノロッドヘテロ構造体上のZnSeの厚みは、注入されたSeの量により調整した。前記ZnSeの成長を、所望量のSe前駆体を注入した後、加熱マントルを取り外すことで終了させた。洗浄手順は、前記CdSナノロッドに関して記載したのと同じとした。
配位性溶媒、例えば、TOAを、ZnSeを成長させるのに、代替的に使用し得る。5mlのTOA、1.2mlのOAおよび0.18g(1.0mmol)の酢酸Znを、100℃で30分間脱気した。前記混合物を、N2雰囲気下において、250℃に加熱した。この結果として、1時間後にオレイン酸Znが形成された。50℃に冷却した後、2mlの予め調製されたCdS/CdSe溶液を、オレイン酸Zn溶液内に注入した。前記混合物におけるクロロホルムを、真空下において30分間蒸発させた。ZnSeの成長を、1.0mlのTOPに溶解した20mg(0.25mmol)のSeを含むSe前駆体をゆっくり注入することにより、250℃で開始させた。CdS/CdSeナノロッドヘテロ構造体上のZnSeの厚みを、注入したSeの量で調整した。前記ZnSeの成長を、所望量のSe前駆体を注入した後、加熱マントルを取り外すことで終了させた。洗浄手順は、前記CdSナノロッドに関して記載したのと同じとした。
本実施例を、エレクトロルミネッセントデバイスにおける前記ナノ粒子の使用を説明するために行った。図4に示したデバイスを使用した。デバイス300は、ガラス基板302、インジウムスズ酸化物を含む第1の電極304、PEDOT:PSSを含む正孔注入層306、TFBを含む正孔輸送層308、以下に詳述する内容のナノ粒子層310、亜鉛酸化物のナノ粒子を含む電子輸送層312およびアルミニウムを含む第2の電極314を含む。
Claims (11)
- 第2の末端が第1の末端と対向する、前記第1の末端および前記第2の末端を有する一次元の半導体性ナノ粒子と、
第1の半導体を備える第1のノードであって、接触点で第1のヘテロ接合を生じる前記一次元の半導体性ナノ粒子のラジアル表面と接触する、第1のノードと、
第2の半導体を備える第2のノードであって、接触点で第2のヘテロ接合を生じる前記一次元の半導体性ナノ粒子のラジアル表面と接触する、第2のノードと、
を備える半導体性ナノ粒子であって、
前記第1のヘテロ接合は前記第2のヘテロ接合と組成的に異なる、半導体性ナノ粒子。 - 前記第1のノードおよび前記第2のノードは、前記一次元の半導体性ナノ粒子の表面上にランダムに配置される、請求項1記載の半導体性ナノ粒子。
- 前記一次元の半導体性ナノ粒子の第1の末端上に配置される第1の末端キャップをさらに備え、前記第1の末端キャップは第1の半導体を備える、請求項1記載の半導体性ナノ粒子。
- 前記一次元の半導体性ナノ粒子の第2の末端に配置される別の第1の末端キャップをさらに備え、前記別の第1の末端キャップは、前記一次元の半導体性ナノ粒子の第1の末端上に配置される第1の末端キャップと同様の組成を有する、請求項1記載の半導体性ナノ粒子。
- 別の第1の末端キャップが、前記一次元の半導体性ナノ粒子の第1の末端に配置される第1の末端キャップと異なる組成を有する、請求項1記載の半導体性ナノ粒子。
- 第1の末端キャップ上に配置され、前記第1の末端キャップと接触する第2の末端キャップをさらに備え、前記第2の末端キャップは前記第1の末端キャップと異なる組成を有する、請求項2記載の半導体性ナノ粒子。
- 前記一次元のナノ粒子がCdSを備え、前記第1のノードがCdSeまたはCdTeを備え、前記第2のノードがZnSeを備える、請求項2記載の半導体性ナノ粒子。
- 前記第1のノードおよび前記第2のノードが、空間的に隣接しない様式で配置される、請求項1記載の半導体性ナノ粒子。
- 半導体の第1の前駆体を半導体の第2の前駆体と反応させて、一次元の半導体性ナノ粒子を形成する工程であって、第1の一次元の半導体性ナノ粒子は、第1の末端と、該第1の末端と対向する第2の末端とを有する、工程と、
第1のヘテロ接合を形成するために、半導体の第3の前駆体を前記一次元のナノ粒子と反応させて、ラジアル表面において前記一次元のナノ粒子と接触する第1のノードを形成する工程と、
前記第1のノードが配置された前記一次元のナノ粒子を、半導体の第4の前駆体と反応させて、前記一次元の半導体性ナノ粒子のラジアル表面に配置される第2のノードを形成し、第2のヘテロ接合を形成する工程を備え、
前記第2のヘテロ接合が、前記第1のヘテロ接合と組成的に異なる、
方法。 - 第1の電極、
第2の電極、および、
前記第1の電極と前記第2の電極との間に配置された半導体性ナノ粒子を備える層
を備える物品であって、
前記半導体性ナノ粒子が、
第2の末端が第1の末端と対向する、前記第1の末端および前記第2の末端を有する一次元の半導体性ナノ粒子と、
第1の半導体を備える第1のノードであって、接触点で第1のヘテロ接合を生じる前記一次元の半導体性ナノ粒子のラジアル表面と接触する、第1のノードと、
第2の半導体を備える第2のノードであって、接触点で第2のヘテロ接合を生じる前記一次元の半導体性ナノ粒子のラジアル表面と接触する、第2のノードと、
を備え、
前記第1のヘテロ接合は前記第2のヘテロ接合と組成的に異なる、物品。 - 電圧および電流を供された場合、前記物品が、可視光を発する、請求項10記載の物品。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/834,381 US9123638B2 (en) | 2013-03-15 | 2013-03-15 | Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same |
US13/834,381 | 2013-03-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014209587A true JP2014209587A (ja) | 2014-11-06 |
JP6469957B2 JP6469957B2 (ja) | 2019-02-13 |
Family
ID=50280212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014050832A Expired - Fee Related JP6469957B2 (ja) | 2013-03-15 | 2014-03-13 | マルチヘテロ接合ナノ粒子、その製造方法および同ナノ粒子を含む物品 |
Country Status (6)
Country | Link |
---|---|
US (2) | US9123638B2 (ja) |
EP (1) | EP2778123B1 (ja) |
JP (1) | JP6469957B2 (ja) |
KR (1) | KR102212760B1 (ja) |
CN (1) | CN104046359B8 (ja) |
TW (1) | TWI556683B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019505403A (ja) * | 2015-12-31 | 2019-02-28 | ダウ グローバル テクノロジーズ エルエルシー | ナノ構造材料の連続フロー合成 |
JP2019517045A (ja) * | 2016-03-24 | 2019-06-20 | ダウ グローバル テクノロジーズ エルエルシー | 光電子デバイス上に画像を生成する方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9123638B2 (en) * | 2013-03-15 | 2015-09-01 | Rohm And Haas Electronic Materials, Llc | Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same |
CN105523521B (zh) * | 2016-01-29 | 2017-01-11 | 厦门大学 | 纳米线纵向同轴异质结构及其电子束聚焦辐照制备方法 |
US20210130690A1 (en) * | 2017-04-19 | 2021-05-06 | Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd | Semiconductor nanostructures and applications |
CN107082446A (zh) * | 2017-05-07 | 2017-08-22 | 苏州市皎朝纳米科技有限公司 | 一种硫化镉/碲化镉异质结纳米棒及其制备方法 |
CN110544746B (zh) * | 2018-05-29 | 2021-03-16 | Tcl科技集团股份有限公司 | 发光二极管及其制备方法 |
US10615358B1 (en) * | 2018-10-17 | 2020-04-07 | Sharp Kabushiki Kaisha | Light-emitting device with high carrier mobility QD layer |
EP3911715A1 (en) | 2019-01-17 | 2021-11-24 | Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd | Colloidal semiconductor nanostructures |
CN110112060A (zh) * | 2019-05-20 | 2019-08-09 | 山东大学 | 一种利用气固固生长模式控制高性能ⅲ-ⅴ族半导体纳米线生长方向的方法 |
CN110165063A (zh) * | 2019-05-27 | 2019-08-23 | 深圳市华星光电技术有限公司 | 量子棒发光二极管器件 |
CN111162187B (zh) * | 2019-12-31 | 2022-07-05 | 广东聚华印刷显示技术有限公司 | 双异质结纳米棒及其制备方法及发光二极管 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070152236A1 (en) * | 2005-12-29 | 2007-07-05 | Halpert Jonathan E | Semiconductor nanocrystal heterostructures |
JP2007184566A (ja) * | 2005-12-06 | 2007-07-19 | Canon Inc | 半導体ナノワイヤを用いた半導体素子、それを用いた表示装置及び撮像装置 |
US20070252132A1 (en) * | 2006-04-28 | 2007-11-01 | Kamins Theodore I | Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles |
US20080079104A1 (en) * | 2006-09-29 | 2008-04-03 | Stewart Duncan R | Sensing devices and methods for forming the same |
WO2008072479A1 (ja) * | 2006-12-13 | 2008-06-19 | Panasonic Corporation | ナノワイヤ及びナノワイヤを備える装置並びにそれらの製造方法 |
JP2010520603A (ja) * | 2007-03-08 | 2010-06-10 | イーストマン コダック カンパニー | 量子ドット発光デバイス |
EP2372751A1 (en) * | 2010-04-02 | 2011-10-05 | Samsung Electronics Co., Ltd. | Silicon nanowire comprising high density metal nanoclusters and method of preparing the same |
US20120205613A1 (en) * | 2011-02-10 | 2012-08-16 | The Royal Institution For The Advancement Of Learning / Mcgill University | High Efficiency Broadband Semiconductor Nanowire Devices and Methods of Fabricating without Foreign Catalysis |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040026684A1 (en) * | 2002-04-02 | 2004-02-12 | Nanosys, Inc. | Nanowire heterostructures for encoding information |
US6788453B2 (en) * | 2002-05-15 | 2004-09-07 | Yissum Research Development Company Of The Hebrew Univeristy Of Jerusalem | Method for producing inorganic semiconductor nanocrystalline rods and their use |
CA2495309C (en) | 2002-08-13 | 2011-11-08 | Massachusetts Institute Of Technology | Semiconductor nanocrystal heterostructures |
US7534488B2 (en) | 2003-09-10 | 2009-05-19 | The Regents Of The University Of California | Graded core/shell semiconductor nanorods and nanorod barcodes |
US7135057B2 (en) * | 2003-04-16 | 2006-11-14 | Hewlett-Packard Development Company, L.P. | Gas storage medium and methods |
US7303628B2 (en) | 2004-03-23 | 2007-12-04 | The Regents Of The University Of California | Nanocrystals with linear and branched topology |
US7129154B2 (en) * | 2004-05-28 | 2006-10-31 | Agilent Technologies, Inc | Method of growing semiconductor nanowires with uniform cross-sectional area using chemical vapor deposition |
US7400665B2 (en) * | 2004-11-05 | 2008-07-15 | Hewlett-Packard Developement Company, L.P. | Nano-VCSEL device and fabrication thereof using nano-colonnades |
US8829460B2 (en) * | 2005-04-27 | 2014-09-09 | Lawrence Livermore National Security, Llc | Three-dimensional boron particle loaded thermal neutron detector |
EP1891686B1 (en) | 2005-06-15 | 2011-08-10 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Iii-v semiconductor core-heteroshell nanocrystals, method for their manufacture and their applications |
US7570355B2 (en) * | 2006-01-27 | 2009-08-04 | Hewlett-Packard Development Company, L.P. | Nanowire heterostructures and methods of forming the same |
KR100779090B1 (ko) * | 2006-07-18 | 2007-11-27 | 한국전자통신연구원 | 아연 산화물을 이용하는 가스 감지기 및 그 제조 방법 |
US20080264479A1 (en) * | 2007-04-25 | 2008-10-30 | Nanoco Technologies Limited | Hybrid Photovoltaic Cells and Related Methods |
US8212235B2 (en) * | 2007-04-25 | 2012-07-03 | Hewlett-Packard Development Company, L.P. | Nanowire-based opto-electronic device |
US7663202B2 (en) * | 2007-06-26 | 2010-02-16 | Hewlett-Packard Development Company, L.P. | Nanowire photodiodes and methods of making nanowire photodiodes |
US20100012168A1 (en) * | 2008-07-18 | 2010-01-21 | Honeywell International | Quantum dot solar cell |
JP4416044B1 (ja) * | 2008-10-07 | 2010-02-17 | 住友電気工業株式会社 | p型窒化ガリウム系半導体を作製する方法、窒化物系半導体素子を作製する方法、及びエピタキシャルウエハを作製する方法 |
US8563395B2 (en) * | 2009-11-30 | 2013-10-22 | The Royal Institute For The Advancement Of Learning/Mcgill University | Method of growing uniform semiconductor nanowires without foreign metal catalyst and devices thereof |
WO2011090863A1 (en) * | 2010-01-19 | 2011-07-28 | Eastman Kodak Company | Ii-vi core-shell semiconductor nanowires |
US8212236B2 (en) * | 2010-01-19 | 2012-07-03 | Eastman Kodak Company | II-VI core-shell semiconductor nanowires |
US8377729B2 (en) * | 2010-01-19 | 2013-02-19 | Eastman Kodak Company | Forming II-VI core-shell semiconductor nanowires |
KR20110092600A (ko) | 2010-02-09 | 2011-08-18 | 삼성전기주식회사 | InP 양자점의 제조 방법 및 이에 따른 InP 양자점 |
US10118835B2 (en) * | 2012-01-11 | 2018-11-06 | Huei Meng Chang | Methods and apparatuses for water purification |
US9123638B2 (en) * | 2013-03-15 | 2015-09-01 | Rohm And Haas Electronic Materials, Llc | Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same |
-
2013
- 2013-03-15 US US13/834,381 patent/US9123638B2/en not_active Expired - Fee Related
-
2014
- 2014-03-13 JP JP2014050832A patent/JP6469957B2/ja not_active Expired - Fee Related
- 2014-03-14 EP EP14159767.4A patent/EP2778123B1/en active Active
- 2014-03-14 TW TW103109387A patent/TWI556683B/zh not_active IP Right Cessation
- 2014-03-17 KR KR1020140031060A patent/KR102212760B1/ko active IP Right Grant
- 2014-03-17 CN CN201410098085.1A patent/CN104046359B8/zh not_active Expired - Fee Related
-
2015
- 2015-08-31 US US14/841,167 patent/US20160225946A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007184566A (ja) * | 2005-12-06 | 2007-07-19 | Canon Inc | 半導体ナノワイヤを用いた半導体素子、それを用いた表示装置及び撮像装置 |
US20070152236A1 (en) * | 2005-12-29 | 2007-07-05 | Halpert Jonathan E | Semiconductor nanocrystal heterostructures |
US20070252132A1 (en) * | 2006-04-28 | 2007-11-01 | Kamins Theodore I | Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles |
US20080079104A1 (en) * | 2006-09-29 | 2008-04-03 | Stewart Duncan R | Sensing devices and methods for forming the same |
WO2008072479A1 (ja) * | 2006-12-13 | 2008-06-19 | Panasonic Corporation | ナノワイヤ及びナノワイヤを備える装置並びにそれらの製造方法 |
JP2010520603A (ja) * | 2007-03-08 | 2010-06-10 | イーストマン コダック カンパニー | 量子ドット発光デバイス |
EP2372751A1 (en) * | 2010-04-02 | 2011-10-05 | Samsung Electronics Co., Ltd. | Silicon nanowire comprising high density metal nanoclusters and method of preparing the same |
US20120205613A1 (en) * | 2011-02-10 | 2012-08-16 | The Royal Institution For The Advancement Of Learning / Mcgill University | High Efficiency Broadband Semiconductor Nanowire Devices and Methods of Fabricating without Foreign Catalysis |
Non-Patent Citations (1)
Title |
---|
MING-JUN JIN ET AL: "Improve photo-electron conversion efficiency of ZnO/CdS coaxial nanorods by p-type CdTe coating", NANOTECHNOLOGY, vol. vol. 23, no. 48,, JPN6018002443, 2 November 2012 (2012-11-02), GB, ISSN: 0003726896 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019505403A (ja) * | 2015-12-31 | 2019-02-28 | ダウ グローバル テクノロジーズ エルエルシー | ナノ構造材料の連続フロー合成 |
JP7018021B2 (ja) | 2015-12-31 | 2022-02-09 | ダウ グローバル テクノロジーズ エルエルシー | ナノ構造材料の連続フロー合成 |
JP2019517045A (ja) * | 2016-03-24 | 2019-06-20 | ダウ グローバル テクノロジーズ エルエルシー | 光電子デバイス上に画像を生成する方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104046359B8 (zh) | 2017-11-21 |
JP6469957B2 (ja) | 2019-02-13 |
EP2778123A1 (en) | 2014-09-17 |
TW201448665A (zh) | 2014-12-16 |
CN104046359B (zh) | 2017-05-17 |
US20140264259A1 (en) | 2014-09-18 |
CN104046359A (zh) | 2014-09-17 |
US9123638B2 (en) | 2015-09-01 |
EP2778123B1 (en) | 2019-09-25 |
TWI556683B (zh) | 2016-11-01 |
US20160225946A1 (en) | 2016-08-04 |
KR20140113589A (ko) | 2014-09-24 |
KR102212760B1 (ko) | 2021-02-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6469957B2 (ja) | マルチヘテロ接合ナノ粒子、その製造方法および同ナノ粒子を含む物品 | |
JP6487625B2 (ja) | マルチヘテロ接合ナノ粒子、その製造方法および同ナノ粒子を含む物品 | |
JP6741389B2 (ja) | マルチヘテロ接合ナノ粒子、その製造方法および同ナノ粒子を含む物品 | |
US20050230673A1 (en) | Colloidal quantum dot light emitting diodes | |
US20100116326A1 (en) | Hybrid Solar Cells with 3-Dimensional Hyperbranched Nanocrystals | |
US8178431B2 (en) | Process for producing a PN homojunction in a nanostructure | |
US20050133087A1 (en) | Semiconductor-nanocrystal/conjugated polymer thin films | |
WO2007120255A2 (en) | Semiconductor nanocrystal heterostructures | |
JP2010532409A (ja) | 発光ナノ複合粒子 | |
KR20120105037A (ko) | 산화아연 나노로드를 이용한 레이저 다이오드 및 그 제조 방법 | |
JP2016518703A (ja) | 2ステップの透明導電膜の堆積方法、及び、GaNナノワイヤデバイスの製造方法 | |
Long | ZnO-based LEDs | |
KR20120073508A (ko) | 탄소 웨이퍼를 사용한 접촉식 발광다이오드 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170224 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180117 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180129 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180427 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181225 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190117 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6469957 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |