JP2011219355A - 金属ナノクラスターを含むシリコンナノワイヤ及びその製造方法 - Google Patents
金属ナノクラスターを含むシリコンナノワイヤ及びその製造方法 Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 208
- 239000010703 silicon Substances 0.000 title claims abstract description 206
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 198
- 239000002070 nanowire Substances 0.000 title claims abstract description 117
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 102
- 239000002184 metal Substances 0.000 title claims abstract description 102
- 238000000034 method Methods 0.000 title claims description 16
- 239000002086 nanomaterial Substances 0.000 claims abstract description 54
- 230000003287 optical effect Effects 0.000 claims abstract description 15
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 10
- 239000010931 gold Substances 0.000 claims description 69
- 229910052737 gold Inorganic materials 0.000 claims description 61
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 22
- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 10
- 238000010304 firing Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- 150000002739 metals Chemical class 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000012298 atmosphere Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052795 boron group element Inorganic materials 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910052800 carbon group element Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 5
- 150000002602 lanthanoids Chemical class 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052723 transition metal Inorganic materials 0.000 claims description 5
- 150000003624 transition metals Chemical class 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 3
- 238000004093 laser heating Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 description 8
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000003325 tomography Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 2
- 239000012620 biological material Substances 0.000 description 2
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000012377 drug delivery Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000001350 scanning transmission electron microscopy Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B1/005—Constitution or structural means for improving the physical properties of a device
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- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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Abstract
【解決手段】本発明のシリコンナノワイヤは、金属ナノクラスターが、シリコンナノ構造体の表面上に形成されてなる点に特徴を有する。金属ナノクラスターは、シリコンナノワイヤの電気的特性及び光学的特性を向上させる役割を果たす。よって、本発明のシリコンナノワイヤは、リチウム電池、太陽電池、バイオセンサー、メモリ素子などの多様な電気素子に有効に使用できる。
【選択図】図1
Description
サイズ1.0×1.0cmであり、厚さ700μmのシリコン基板上に1.0〜1.5nmの金(Au)薄膜層をスパッタリングにより蒸着した。
Claims (24)
- シリコンナノ構造体の表面上に金属ナノクラスターを有するシリコンナノワイヤ。
- 前記金属ナノクラスターの平均サイズは、1〜10nmであることを特徴とする請求項1に記載のシリコンナノワイヤ。
- 前記金属ナノクラスターの平均サイズは、2〜5nmであることを特徴とする請求項2に記載のシリコンナノワイヤ。
- 前記金属ナノクラスターは、前記シリコンナノ構造体の表面上に1×105個/cm2以上の高密度で存在することを特徴とする請求項1〜3のいずれか1項に記載のシリコンナノワイヤ。
- 前記金属ナノクラスターは、シリコンナノ構造体の表面上に1×106個/cm2〜1×1016個/cm2の密度で存在することを特徴とする請求項4に記載のシリコンナノワイヤ。
- 前記金属ナノクラスターが、1×1011個/cm2〜1×1013個/cm2の範囲で存在することを特徴とする請求項5に記載のシリコンナノワイヤ。
- 前記金属ナノクラスターが、遷移金属、ランタノイド、13族元素(ただし、ホウ素を除く)及び14族元素(ただし、炭素及びケイ素を除く)からなる群から選択される一つ以上の金属を含むことを特徴とする請求項1〜6のいずれか1項に記載のシリコンナノワイヤ。
- 前記金属ナノクラスターが、金(Au)、ニッケル(Ni)、鉄(Fe)、銀(Ag)、アルミニウム(Al)、ゲルマニウム(Ge)、ガドリニウム(Gd)、銅(Cu)、インジウム(In)及び鉛(Pb)からなる群から選択された一つ以上の金属を含むことを特徴とする請求項7に記載のシリコンナノワイヤ。
- 前記金属ナノクラスターが、金(Au)を含むことを特徴とする請求項8に記載のシリコンナノワイヤ。
- 前記シリコンナノワイヤの長手方向に対する垂直な断面が、六角形構造であることを特徴とする請求項1〜9のいずれか1項に記載のシリコンナノワイヤ。
- 前記シリコンナノワイヤの末端部が、半球状の金属キャップを備えることを特徴とする請求項1〜10のいずれか1項に記載のシリコンナノワイヤ。
- 前記シリコンナノワイヤの直径が、10〜500nmであることを特徴とする請求項1〜11のいずれか1項に記載のシリコンナノワイヤ。
- 前記シリコンナノワイヤの長さが、0.5〜20μmであることを特徴とする請求項1〜12のいずれか1項に記載のシリコンナノワイヤ。
- 急速加熱化学気相蒸着法、レーザー加熱化学気相蒸着法または有機金属化学蒸着法により得られることを特徴とする請求項1〜13のいずれか1項に記載のシリコンナノワイヤ。
- シリコン基板上に金属薄膜層を形成する段階Aと、
得られた金属薄膜層を有するシリコン基板を、化学気相蒸着装置のチャンバ内で水素雰囲気下で第1焼成して金属−シリコンアイランドを形成する段階Bと、
前記チャンバ内に混合ガスを注入しつつ前記金属−シリコンアイランドが形成されたシリコン基板を第2焼成して、シリコンナノ構造体をさせる段階Cと、を含むシリコンナノワイヤの製造方法。 - 前記第1焼成が、300〜1,000℃の温度範囲で0.1〜500Torrの気圧下で行われることを特徴とする請求項15に記載のシリコンナノワイヤの製造方法。
- 前記第2焼成が、0.1〜10Torrの気圧下で500〜600℃の温度範囲で行われることを特徴とする請求項15または16に記載のシリコンナノワイヤの製造方法。
- 前記混合ガスが、SiH4とH2との混合ガスであることを特徴とする請求項15〜17のいずれか1項に記載のシリコンナノワイヤの製造方法。
- 前記金属薄膜層が、遷移金属、ランタノイド、13族元素(ただし、ホウ素を除く)及び14族元素(ただし、炭素及びケイ素を除く)からなる群から選択された一つ以上の金属を含むことを特徴とする請求項15〜18のいずれか1項に記載のシリコンナノワイヤの製造方法。
- 前記金属薄膜層が、金(Au)、ニッケル(Ni)、鉄(Fe)、銀(Ag)、アルミニウム(Al)、ゲルマニウム(Ge)、ガドリニウム(Gd)、銅(Cu)、インジウム(In)及び鉛(Pb)からなる群から選択された一つ以上の金属を含むことを特徴とする請求項19に記載のシリコンナノワイヤの製造方法。
- 前記金属薄膜層が、金(Au)を含むことを特徴とする請求項20に記載のシリコンナノワイヤの製造方法。
- 前記段階Cの後、300〜1,000℃で熱処理して、金ナノクラスターのサイズまたは密度を調節する段階Dをさらに含むことを特徴とする請求項15〜21のいずれか1項に記載のシリコンナノワイヤの製造方法。
- 請求項1〜14のうちいずれか1項に記載のシリコンナノワイヤを備える電気素子。
- 前記電気素子が、太陽電池、リチウム電池、トランジスタ、メモリ素子、光センサー、バイオセンサー、発光ダイオード、導波管、発光素子またはキャパシタであることを特徴とする請求項23に記載の電気素子。
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013117053A (ja) * | 2011-12-05 | 2013-06-13 | Furukawa Electric Co Ltd:The | 中空銅コアシリコンナノワイヤー、シリコン複合銅基板及びこれらの製造方法並びにリチウムイオン二次電池 |
JP2013128107A (ja) * | 2011-12-19 | 2013-06-27 | Palo Alto Research Center Inc | ナノワイヤのシードを横方向に結晶化することにより生成される単結晶シリコンの薄膜トランジスタ(tft) |
KR101327744B1 (ko) | 2012-06-22 | 2013-11-11 | 원광대학교산학협력단 | 고효율의 태양전지 제조방법 |
KR101374272B1 (ko) | 2013-03-22 | 2014-03-13 | 연세대학교 산학협력단 | 미세 표면 구조를 갖는 고효율 광-열에너지 변환소자 및 그 제조방법 |
KR101436569B1 (ko) | 2012-12-26 | 2014-09-01 | 에스케이이노베이션 주식회사 | 리튬이차전지용 음극활물질 및 이를 이용한 리튬이차전지 |
WO2018208017A1 (ko) * | 2017-05-12 | 2018-11-15 | 전자부품연구원 | 복합패턴구조체 및 그의 제조방법 |
JP2020198399A (ja) * | 2019-06-04 | 2020-12-10 | 国立大学法人 東京大学 | ナノワイヤ製造方法、ナノワイヤ製造装置、及びナノワイヤ |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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CN112071370B (zh) * | 2020-07-15 | 2024-02-02 | 北京化工大学 | 一种金属纳米团簇结构的优化方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006225258A (ja) * | 2005-02-16 | 2006-08-31 | Samsung Electronics Co Ltd | シリコンナノワイヤおよびその製造方法 |
JP2008028373A (ja) * | 2006-06-20 | 2008-02-07 | Matsushita Electric Ind Co Ltd | ナノワイヤ及びナノワイヤを備える装置並びにその製造方法 |
JP4167718B2 (ja) * | 2006-12-13 | 2008-10-22 | 松下電器産業株式会社 | ナノワイヤ及びナノワイヤを備える装置並びにそれらの製造方法 |
WO2009122113A2 (fr) * | 2008-03-20 | 2009-10-08 | Ecole Polytechnique | Procede de production de nanostructures sur un substrat d'oxyde metallique, procede de depot de couches minces sur un tel substrat, et dispositif forme de couches minces |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3747440B2 (ja) | 2003-03-10 | 2006-02-22 | 独立行政法人科学技術振興機構 | 金属ナノワイヤーの製造方法 |
KR100581005B1 (ko) | 2003-05-27 | 2006-05-17 | 한국과학기술연구원 | 단일전구체와 열화학증착법을 이용한 탄화규소 나노로드및 나노와이어의 성장방법 |
US7335259B2 (en) | 2003-07-08 | 2008-02-26 | Brian A. Korgel | Growth of single crystal nanowires |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
KR101102098B1 (ko) | 2005-11-07 | 2012-01-02 | 삼성전자주식회사 | 가지형 나노 와이어의 제조방법 |
KR100741243B1 (ko) | 2005-11-07 | 2007-07-19 | 삼성전자주식회사 | 금속 나노닷들을 포함하는 나노 와이어 및 그의 제조방법 |
US7718995B2 (en) * | 2006-06-20 | 2010-05-18 | Panasonic Corporation | Nanowire, method for fabricating the same, and device having nanowires |
GB0700021D0 (en) | 2007-01-02 | 2007-02-07 | Univ Surrey | Methods of adhering particles to a material by heating |
US8093474B2 (en) | 2007-03-23 | 2012-01-10 | Lawrence Livermore National Security, Llc | Metallic nanospheres embedded in nanowires initiated on nanostructures and methods for synthesis thereof |
US20090201496A1 (en) * | 2008-02-11 | 2009-08-13 | Shuit-Tong Lee | Surface-enhanced raman scattering based on nanomaterials as substrate |
-
2010
- 2010-04-02 KR KR1020100030504A patent/KR101706353B1/ko active IP Right Grant
-
2011
- 2011-03-31 US US13/076,957 patent/US8679949B2/en not_active Expired - Fee Related
- 2011-03-31 EP EP11160698A patent/EP2372751A1/en not_active Withdrawn
- 2011-04-01 JP JP2011081620A patent/JP5890613B2/ja not_active Expired - Fee Related
- 2011-04-02 CN CN201110087212.4A patent/CN102234111B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006225258A (ja) * | 2005-02-16 | 2006-08-31 | Samsung Electronics Co Ltd | シリコンナノワイヤおよびその製造方法 |
JP2008028373A (ja) * | 2006-06-20 | 2008-02-07 | Matsushita Electric Ind Co Ltd | ナノワイヤ及びナノワイヤを備える装置並びにその製造方法 |
JP4167718B2 (ja) * | 2006-12-13 | 2008-10-22 | 松下電器産業株式会社 | ナノワイヤ及びナノワイヤを備える装置並びにそれらの製造方法 |
WO2009122113A2 (fr) * | 2008-03-20 | 2009-10-08 | Ecole Polytechnique | Procede de production de nanostructures sur un substrat d'oxyde metallique, procede de depot de couches minces sur un tel substrat, et dispositif forme de couches minces |
JP2011519314A (ja) * | 2008-03-20 | 2011-07-07 | エコール ポリテクニク | 金属酸化物基体上でのナノ構造体の製造方法、金属酸化物基体上への薄膜の付着方法、および薄膜装置 |
Non-Patent Citations (2)
Title |
---|
DHALLUIN,F. ET AL: ""Critical condition for growth of silicon nanowires"", JOURNAL OF APPLIED PHYSICS, vol. 102, no. 9, JPN7014003516, 1 November 2007 (2007-11-01), pages 094906, ISSN: 0002958190 * |
WU,Y. ET AL: ""Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires"", NANO LETTERS, vol. 2, no. 2, JPN7008005404, 13 February 2002 (2002-02-13), pages 83 - 86, XP055115359, ISSN: 0003245166, DOI: 10.1021/nl0156888 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013117053A (ja) * | 2011-12-05 | 2013-06-13 | Furukawa Electric Co Ltd:The | 中空銅コアシリコンナノワイヤー、シリコン複合銅基板及びこれらの製造方法並びにリチウムイオン二次電池 |
JP2013128107A (ja) * | 2011-12-19 | 2013-06-27 | Palo Alto Research Center Inc | ナノワイヤのシードを横方向に結晶化することにより生成される単結晶シリコンの薄膜トランジスタ(tft) |
KR101327744B1 (ko) | 2012-06-22 | 2013-11-11 | 원광대학교산학협력단 | 고효율의 태양전지 제조방법 |
KR101436569B1 (ko) | 2012-12-26 | 2014-09-01 | 에스케이이노베이션 주식회사 | 리튬이차전지용 음극활물질 및 이를 이용한 리튬이차전지 |
KR101374272B1 (ko) | 2013-03-22 | 2014-03-13 | 연세대학교 산학협력단 | 미세 표면 구조를 갖는 고효율 광-열에너지 변환소자 및 그 제조방법 |
WO2018208017A1 (ko) * | 2017-05-12 | 2018-11-15 | 전자부품연구원 | 복합패턴구조체 및 그의 제조방법 |
JP2020198399A (ja) * | 2019-06-04 | 2020-12-10 | 国立大学法人 東京大学 | ナノワイヤ製造方法、ナノワイヤ製造装置、及びナノワイヤ |
JP7298822B2 (ja) | 2019-06-04 | 2023-06-27 | 国立大学法人 東京大学 | ナノワイヤ製造方法、及びナノワイヤ製造装置 |
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