JP2013119486A5 - - Google Patents

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Publication number
JP2013119486A5
JP2013119486A5 JP2011266877A JP2011266877A JP2013119486A5 JP 2013119486 A5 JP2013119486 A5 JP 2013119486A5 JP 2011266877 A JP2011266877 A JP 2011266877A JP 2011266877 A JP2011266877 A JP 2011266877A JP 2013119486 A5 JP2013119486 A5 JP 2013119486A5
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JP
Japan
Prior art keywords
single crystal
silicon single
calculated
evaluating
heat treatment
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JP2011266877A
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English (en)
Japanese (ja)
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JP2013119486A (ja
JP5772553B2 (ja
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Priority claimed from JP2011266877A external-priority patent/JP5772553B2/ja
Priority to JP2011266877A priority Critical patent/JP5772553B2/ja
Priority to DE201211004731 priority patent/DE112012004731T5/de
Priority to PCT/JP2012/007232 priority patent/WO2013084410A1/ja
Priority to US14/358,618 priority patent/US9111883B2/en
Priority to KR20147015202A priority patent/KR20140099266A/ko
Publication of JP2013119486A publication Critical patent/JP2013119486A/ja
Publication of JP2013119486A5 publication Critical patent/JP2013119486A5/ja
Publication of JP5772553B2 publication Critical patent/JP5772553B2/ja
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JP2011266877A 2011-12-06 2011-12-06 シリコン単結晶の評価方法およびシリコン単結晶の製造方法 Active JP5772553B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011266877A JP5772553B2 (ja) 2011-12-06 2011-12-06 シリコン単結晶の評価方法およびシリコン単結晶の製造方法
KR20147015202A KR20140099266A (ko) 2011-12-06 2012-11-12 실리콘 단결정의 평가방법 및 실리콘 단결정의 제조방법
PCT/JP2012/007232 WO2013084410A1 (ja) 2011-12-06 2012-11-12 シリコン単結晶の評価方法およびシリコン単結晶の製造方法
US14/358,618 US9111883B2 (en) 2011-12-06 2012-11-12 Method for evaluating silicon single crystal and method for manufacturing silicon single crystal
DE201211004731 DE112012004731T5 (de) 2011-12-06 2012-11-12 Verfahren zum Evaluieren von Silizium-Einkristall und Verfahren zum Herstellen von Silizium-Einkristall

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011266877A JP5772553B2 (ja) 2011-12-06 2011-12-06 シリコン単結晶の評価方法およびシリコン単結晶の製造方法

Publications (3)

Publication Number Publication Date
JP2013119486A JP2013119486A (ja) 2013-06-17
JP2013119486A5 true JP2013119486A5 (enExample) 2014-06-26
JP5772553B2 JP5772553B2 (ja) 2015-09-02

Family

ID=48573804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011266877A Active JP5772553B2 (ja) 2011-12-06 2011-12-06 シリコン単結晶の評価方法およびシリコン単結晶の製造方法

Country Status (5)

Country Link
US (1) US9111883B2 (enExample)
JP (1) JP5772553B2 (enExample)
KR (1) KR20140099266A (enExample)
DE (1) DE112012004731T5 (enExample)
WO (1) WO2013084410A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2997096B1 (fr) * 2012-10-23 2014-11-28 Commissariat Energie Atomique Procede de formation d'un lingot en silicium de resistivite uniforme
JP6036670B2 (ja) * 2013-12-10 2016-11-30 信越半導体株式会社 シリコン単結晶基板の欠陥濃度評価方法
US20150294868A1 (en) * 2014-04-15 2015-10-15 Infineon Technologies Ag Method of Manufacturing Semiconductor Devices Containing Chalcogen Atoms
KR101895817B1 (ko) 2014-06-02 2018-09-07 가부시키가이샤 사무코 실리콘 웨이퍼 및 그 제조 방법
FR3045074B1 (fr) * 2015-12-14 2018-01-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede pour ajuster la resistivite d'un lingot semi-conducteur lors de sa fabrication
FR3059821B1 (fr) * 2016-12-05 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de mesure de temperature
JP6669133B2 (ja) * 2017-06-23 2020-03-18 株式会社Sumco シリコンウェーハのサーマルドナー生成挙動予測方法、シリコンウェーハの評価方法およびシリコンウェーハの製造方法
JP2019019030A (ja) * 2017-07-18 2019-02-07 信越半導体株式会社 シリコン単結晶の評価方法およびシリコン単結晶の製造方法
JP2019094224A (ja) 2017-11-21 2019-06-20 信越半導体株式会社 シリコン単結晶の育成方法
JP6844561B2 (ja) * 2018-03-09 2021-03-17 信越半導体株式会社 酸素濃度評価方法
JP7582070B2 (ja) * 2021-05-25 2024-11-13 株式会社Sumco シリコンウェーハのサーマルドナー挙動予測方法及びシリコンウェーハの製造方法
US20230112094A1 (en) * 2021-10-11 2023-04-13 Globalwafers Co., Ltd. Modeling thermal donor formation and target resistivity for single crystal silicon ingot production
JP7673696B2 (ja) * 2022-06-29 2025-05-09 信越半導体株式会社 シリコン単結晶基板の酸素濃度の上限値の決定方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2688137B2 (ja) 1991-12-04 1997-12-08 信越半導体株式会社 シリコン単結晶の引上げ方法
JP3985768B2 (ja) 2003-10-16 2007-10-03 株式会社Ｓｕｍｃｏ 高抵抗シリコンウェーハの製造方法
KR100779341B1 (ko) 2003-10-21 2007-11-23 가부시키가이샤 섬코 고저항 실리콘 웨이퍼의 제조 방법, 에피택셜 웨이퍼 및ｓｏｉ 웨이퍼의 제조 방법
TWI290182B (en) * 2004-01-27 2007-11-21 Sumco Techxiv Corp Method for predicting precipitation behavior of oxygen in silicon single crystal, determining production parameter thereof, and storage medium storing program for predicting precipitation behavior of oxygen in silicon single crystal
JP4656284B2 (ja) * 2004-04-02 2011-03-23 株式会社Ｓｕｍｃｏ 高抵抗シリコンウェーハの製造方法
WO2006125069A2 (en) * 2005-05-19 2006-11-23 Memc Electronic Materials, Inc. A high resistivity silicon structure and a process for the preparation thereof
TW200818327A (en) * 2006-09-29 2008-04-16 Sumco Techxiv Corp Silicon wafer heat treatment method
US8263484B2 (en) * 2009-03-03 2012-09-11 Sumco Corporation High resistivity silicon wafer and method for manufacturing the same
FR2964459B1 (fr) * 2010-09-02 2012-09-28 Commissariat Energie Atomique Procede de cartographie de la concentration en oxygene
FR2974180B1 (fr) * 2011-04-15 2013-04-26 Commissariat Energie Atomique Procede de determination de la concentration en oxygene interstitiel.

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