JP2013115282A - 半導体装置およびその製造方法 - Google Patents
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Abstract
半導体素子と基板がはんだで接合され、樹脂でモールドされる半導体装置の信頼性を高めることを目的とする。
【解決手段】
はんだ材106に易揮発金属(Zn、Mg、Sb)を含むはんだを用い、半導体素子104とリードフレーム102を接合し、ワイヤボンディングを実施した後、真空加熱処理を加え、はんだ中の易揮発金属を揮発させ、基板表面に付着してリードフレームとの合金103を形成させることで、基板表面を粗化し、封止樹脂101と基板の密着力を向上させる。
【選択図】図2
Description
そののち、樹脂で全体をモールドし、半導体装置を製造した。比較として、真空加熱処理をしない通常の半導体装置、および真空加熱処理を施すが、Zn、Mg、Sbを含まない、Sn-Cuはんだを用いた半導体装置を製造した。
NiめっきCuリードフレームにSiチップをSn-Ag-Cuはんだで接合した。続いて、ダイボンダーにより、チップの四角にZn-Alはんだ、Zn-Al-Mgはんだ、Sn-Sbはんだ、Zn-Snはんだを供給し、その後、ワイヤボンドを行った。さらに、真空加熱処理を施し、樹脂モールドし、半導体装置を製造した。供給するZn、Mg、Sbを含むはんだの量は、揮発する量に対して十分に多量になってしまうため、チップの四角には供給したはんだがそのまま残存する。
Claims (11)
- リードに、はんだを用いて半導体素子を接続する接続工程と、
減圧雰囲気下で、易揮発金属を蒸発させ、前記リードの表面に、当該易揮発金属とリードに含まれる金属との合金を形成する合金形成工程と、
前記半導体素子及び前記合金が形成されたリードを、樹脂封止する封止工程と、
を有する半導体装置の製造方法。 - 請求項1において、
前記合金形成工程は、前記接続工程と同時または後に行われることを特徴とする半導体装置の製造方法。 - 請求項2において、
前記リードにはんだ接続された半導体素子に、ワイヤまたはリボンをボンディングするボンディング工程を有し、
前記合金形成工程は、前記ボンディング工程より後に行われることを特徴とする半導体装置の製造方法。 - 請求項1乃至3のいずれかにおいて、
前記蒸発させる易揮発性金属は、前記半導体素子を接続するはんだに含まれている易揮発性金属を用いることを特徴とする半導体装置の製造方法。 - 請求項4において、
前記接続に用いるはんだには、前記易揮発金属が5wt.%以上含まれることを特徴とする半導体装置の製造方法。 - 請求項1乃至3のいずれかにおいて、
前記易揮発性金属は、前記半導体素子を接続するはんだとは別に供給されることを特徴とする半導体装置の製造方法。 - 請求項1乃至6のいずれかにおいて、
前記易揮発金属は、Zn、Mg、Sbのうち、何れか1種類以上を含むことを特徴とする半導体装置の製造方法。 - リードと、
半導体素子と、
前記リードを半導体素子とを接続するはんだと、
前記リード、はんだ及び半導体素子とを備えた半導体装置において、
前記リードと前記封止樹脂との間に、易揮発金属と前記リードとの合金を備えたことを特徴とする半導体装置。 - 請求項8において、
前記合金を形成する易揮発金属は、Zn、Mg、Sbのうち、何れか1種類以上を含み、前記はんだに含まれる元素と同一の元素であることを特徴とする半導体装置。 - 請求項8または9において、
前記リードとはんだとの間には、前記合金が形成されていないことを特徴とする半導体装置。 - 請求項8乃至10のいずれかにおいて、
前記リードの前記封止樹脂と接続される領域は、前記はんだに接続される領域よりも、表面粗さが大きいことを特徴とする半導体装置。
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Application Number | Priority Date | Filing Date | Title |
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JP2011261185A JP5930680B2 (ja) | 2011-11-30 | 2011-11-30 | 半導体装置およびその製造方法 |
PCT/JP2012/078775 WO2013080759A1 (ja) | 2011-11-30 | 2012-11-07 | 半導体装置およびその製造方法 |
US14/361,653 US9184115B2 (en) | 2011-11-30 | 2012-11-07 | Semiconductor device and method for manufacturing same |
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JP2011261185A JP5930680B2 (ja) | 2011-11-30 | 2011-11-30 | 半導体装置およびその製造方法 |
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JP2013115282A true JP2013115282A (ja) | 2013-06-10 |
JP5930680B2 JP5930680B2 (ja) | 2016-06-08 |
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JP2011261185A Expired - Fee Related JP5930680B2 (ja) | 2011-11-30 | 2011-11-30 | 半導体装置およびその製造方法 |
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US (1) | US9184115B2 (ja) |
JP (1) | JP5930680B2 (ja) |
WO (1) | WO2013080759A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017199647A1 (ja) * | 2016-05-16 | 2017-11-23 | 株式会社デンソー | 電子装置 |
JP2018096812A (ja) * | 2016-12-13 | 2018-06-21 | 株式会社東海理化電機製作所 | 半導体パッケージ及びその検査方法 |
JP2020017582A (ja) * | 2018-07-24 | 2020-01-30 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5897062B2 (ja) * | 2014-05-08 | 2016-03-30 | 三菱電機株式会社 | 圧縮機用電動機及び圧縮機及び冷凍サイクル装置及び圧縮機用電動機の製造方法 |
JP6721346B2 (ja) | 2016-01-27 | 2020-07-15 | ローム株式会社 | 半導体装置 |
TWM549451U (zh) * | 2017-05-09 | 2017-09-21 | Taiwan Semiconductor Co Ltd | 具有封裝體卡固結構之晶片封裝元件 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS60218863A (ja) * | 1984-04-13 | 1985-11-01 | Furukawa Electric Co Ltd:The | 半導体リ−ドフレ−ム |
JP2006035310A (ja) * | 2004-06-24 | 2006-02-09 | Sumitomo Metal Mining Co Ltd | 無鉛はんだ合金 |
JP2006255784A (ja) * | 2004-11-24 | 2006-09-28 | Nittetsu Micro Metal:Kk | 無鉛ハンダ合金 |
Family Cites Families (7)
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TW457674B (en) * | 1999-03-15 | 2001-10-01 | Texas Instruments Inc | Aluminum leadframes for semiconductor devices and method of fabrication |
WO2000062341A1 (fr) * | 1999-04-08 | 2000-10-19 | Shinko Electric Industries Co., Ltd. | Grille de connexion pour dispositif semi-conducteur |
JP4330357B2 (ja) | 2003-03-06 | 2009-09-16 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP4343117B2 (ja) * | 2005-01-07 | 2009-10-14 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
JP2007266562A (ja) | 2006-03-03 | 2007-10-11 | Matsushita Electric Ind Co Ltd | 配線部材、樹脂付金属部品及び樹脂封止半導体装置、並びにこれらの製造方法 |
JP4390799B2 (ja) * | 2006-11-21 | 2009-12-24 | 株式会社日立製作所 | 接続材料、接続材料の製造方法、および半導体装置 |
JP2008187045A (ja) | 2007-01-30 | 2008-08-14 | Matsushita Electric Ind Co Ltd | 半導体装置用リードフレームとその製造方法、半導体装置 |
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- 2011-11-30 JP JP2011261185A patent/JP5930680B2/ja not_active Expired - Fee Related
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2012
- 2012-11-07 WO PCT/JP2012/078775 patent/WO2013080759A1/ja active Application Filing
- 2012-11-07 US US14/361,653 patent/US9184115B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60218863A (ja) * | 1984-04-13 | 1985-11-01 | Furukawa Electric Co Ltd:The | 半導体リ−ドフレ−ム |
JP2006035310A (ja) * | 2004-06-24 | 2006-02-09 | Sumitomo Metal Mining Co Ltd | 無鉛はんだ合金 |
JP2006255784A (ja) * | 2004-11-24 | 2006-09-28 | Nittetsu Micro Metal:Kk | 無鉛ハンダ合金 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017199647A1 (ja) * | 2016-05-16 | 2017-11-23 | 株式会社デンソー | 電子装置 |
JP2017208385A (ja) * | 2016-05-16 | 2017-11-24 | 株式会社デンソー | 電子装置 |
JP2018096812A (ja) * | 2016-12-13 | 2018-06-21 | 株式会社東海理化電機製作所 | 半導体パッケージ及びその検査方法 |
JP2020017582A (ja) * | 2018-07-24 | 2020-01-30 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
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Publication number | Publication date |
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JP5930680B2 (ja) | 2016-06-08 |
US9184115B2 (en) | 2015-11-10 |
US20140327121A1 (en) | 2014-11-06 |
WO2013080759A1 (ja) | 2013-06-06 |
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