TWM549451U - 具有封裝體卡固結構之晶片封裝元件 - Google Patents

具有封裝體卡固結構之晶片封裝元件 Download PDF

Info

Publication number
TWM549451U
TWM549451U TW106206587U TW106206587U TWM549451U TW M549451 U TWM549451 U TW M549451U TW 106206587 U TW106206587 U TW 106206587U TW 106206587 U TW106206587 U TW 106206587U TW M549451 U TWM549451 U TW M549451U
Authority
TW
Taiwan
Prior art keywords
package
wafer
jumper
connection structure
connection
Prior art date
Application number
TW106206587U
Other languages
English (en)
Inventor
Reyn Yi-Wen Qin
Lucy Gui-Zhi Fan
mei-fang Song
xiao-li Wang
Original Assignee
Taiwan Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Co Ltd filed Critical Taiwan Semiconductor Co Ltd
Priority to TW106206587U priority Critical patent/TWM549451U/zh
Priority to US15/644,232 priority patent/US10037964B1/en
Publication of TWM549451U publication Critical patent/TWM549451U/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/02—Soldered or welded connections
    • H01R4/029—Welded connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/26175—Flow barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/3701—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/3701—Shape
    • H01L2224/37012—Cross-sectional shape
    • H01L2224/37013—Cross-sectional shape being non uniform along the connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4001—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4007—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73263—Layer and strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/8438—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/84385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/8438—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/84399—Material
    • H01L2224/844—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/183—Connection portion, e.g. seal
    • H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/02—Soldered or welded connections
    • H01R4/028—Soldered or welded connections comprising means for preventing flowing or wicking of solder or flux in parts not desired

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Description

具有封裝體卡固結構之晶片封裝元件
本創作係有關於一種晶片封裝元件，尤其是指一種利用基座上之封裝體卡固結構卡固封裝體之具有封裝體卡固結構之晶片封裝元件。
自工業革命以來，科技飛速地發展。其中，人們所駕駛的交通工具從最原始的畜力車演變為今日人們所駕駛的汽車與電動車。其中，在發動汽車引擎時，供電系統會由電池供電轉變為發電機供電。在轉換時，電路上會有瞬間的負載突降，因而使得電路的瞬間電壓過高。因此，瞬間電壓過高的電流會對電路上的電子元件產生破壞。為了防止電路上的電子元件被破壞，人們會在電路接上用以保護電路上的電子元件不被破壞之電路保護元件，藉以防止瞬間電壓過高的電流對電路上的電子元件產生破壞。
為了詳細地說明先前技術之電路保護元件，請參閱第一圖，第一圖係顯示先前技術所提供之電路保護元件之示意圖。如圖所示，電路保護元件PA1包含一基座PA11、一晶片PA12、一引線PA13與一封裝體PA14。基座PA11包含一基座面PA111。基座面PA111係設有一晶片設置部PA1111與封裝體固定斜槽PA1112。封裝 體固定斜槽PA1112係位於基座面PA111之邊緣，並包含一固定槽斜壁PA11121。
晶片PA12係藉由一焊料PAW1焊接於晶片設置部PA1111。其中，晶片PA12為瞬態抑制(Transient-Voltage-Suppression；TVS)二極體晶片。引線PA13包含一具有一凸起結構PA1311之晶片連接部PA131與一引線接腳部PA132。凸起結構PA1311係藉由一焊料PAW2焊接於晶片PA12上。封裝體PA14係局部包覆基座PA11與一引線PA13，並包覆晶片PA12，且受封裝體固定斜槽PA1112之固定槽斜壁PA11121所卡固。其中，引線接腳部PA132外露於封裝體PA14。
當電路上的電流由低電壓瞬間驟升至高電壓時，由於晶片PA12之電阻會在導通具有高電壓之電流時驟降，因而使電流瞬間集中流至晶片PA12。由於晶片PA12瞬間導通具有高電壓之電流，熱容量低的引線PA13的溫度會驟然升高，因而使得引線PA13與封裝體PA14會受熱膨脹而對晶片施以一平行方向PAP或一垂直方向PAV的熱應力。其中，固定槽斜壁PA11121僅能降低封裝體PA14在平行方向的熱應力。
因此，晶片PA12容易因平行方向PAP或一垂直方向PAV的熱應力的作用而受到破壞。此外，由於焊料PAW1、PAW2之溫度驟然升高，會使得焊料PAW1、PAW2因受熱而液化，而導致電路保護元件PA1冷卻後基座PA11與引線PA13短路，使得電路保護元件PA1故障。
有鑒於在先前技術中，在電路保護元件流通高電壓之電流時，晶片容易因熱應力的作用而受到破壞。此外，由於焊料之溫度驟然升高會使得焊料因受熱而液化，而導致電路保護元件冷卻後基座與引線短路，使得電路保護元件故障。
本創作為解決先前技術之問題，所採用之必要技術手段為提供一種具有封裝體卡固結構之晶片封裝元件。一種具有封裝體卡固結構之晶片封裝元件，用以耦接於一功能電路，並包含一基座、一晶片、一跨接連接結構、一引線結構與一封裝體。基座具有一基座面，基座面設有一晶片連接部與一圍繞晶片連接部之封裝體卡固結構。
晶片連結於晶片連接部。跨接連接結構焊接於晶片，並在導通一高電壓電流時產生一熱變形作用。引線結構包含一定義有一熱變形允差行程之引線凹槽，其中，在跨接連接結構受熱變形作用後沿熱變形允差行程可移動地設置並焊接連結於引線凹槽。封裝體至少局部地包覆引線結構與基座，包覆晶片與跨接連接結構，並卡固於封裝體卡固結構。
在上述必要技術手段的基礎下，上述具有封裝體卡固結構之晶片封裝元件所衍生之一附屬技術手段為基座面係開設有一緊鄰且圍繞於晶片連接部之基座焊料容置凹槽。
在上述必要技術手段的基礎下，上述具有 封裝體卡固結構之晶片封裝元件所衍生之一附屬技術手段為跨接連接結構係包含一連接結構本體，連接結構本體鄰近於晶片之一側係具有一朝向晶片凸出且焊接於晶片之凸出結構。此外，在連接結構本體遠離於晶片之一側具有一用以限位封裝體之跨接結構限位凹槽。
在上述必要技術手段的基礎下，上述具有封裝體卡固結構之晶片封裝元件所衍生之一附屬技術手段為跨接結構限位凹槽背向晶片且縱橫交錯地開設於連接結構本體。此外，跨接結構限位凹槽為V型凹槽。
在上述必要技術手段的基礎下，上述具有封裝體卡固結構之晶片封裝元件所衍生之一附屬技術手段為跨接連接結構係包含一連接結構本體與一跨接接腳。連接結構本體連接於晶片。跨接接腳自連接結構本體延伸出，且包含一接腳彎折部。接腳彎折部用以在跨接連接結構受應力作用時，使跨接接腳可伸縮地於熱變形允差行程上活動。
在上述必要技術手段的基礎下，上述具有封裝體卡固結構之晶片封裝元件所衍生之一附屬技術手段為基座面之邊緣開設有至少一封裝體限位槽，封裝體限位槽具有一用以限位該封裝體之限位斜壁。
在上述必要技術手段的基礎下，上述具有封裝體卡固結構之晶片封裝元件所衍生之一附屬技術手段為封裝體卡固結構為鳩尾槽。
承上所述，在本創作所提供之具有封裝體卡固結構之晶片封裝元件中，由於基座設有封裝體卡固 結構，因而在封裝體受熱應力作用時，封裝體會受到封裝體卡固結構之卡固。此外，當跨接連接結構受應力作用時，跨接接腳可於引線凹槽之熱變形允差行程上活動。另外，在晶片與基座之間的焊料受熱時，焊料會流至基座焊料容置凹槽。
相較於先前技術，在本創作所提供之具有封裝體卡固結構之晶片封裝元件中，由於封裝體會受到封裝體卡固結構之卡固，且跨接連接結構受熱應力作用時會於引線凹槽之熱變形允差行程上活動，使得封裝體不會因為承受平行與垂直方向的應力而遭受破壞。此外，由於晶片與基座之間之焊料受熱時，會流至基座焊料容置凹槽，因而避免了與晶片與跨接連接結構之間的焊料接壤，進一步地避免了晶片與跨接連接結構發生短路。
PA1‧‧‧電路保護元件
PA11‧‧‧基座
PA111‧‧‧基座面
PA1111‧‧‧晶片設置部
PA1112‧‧‧封裝體固定斜槽
PA11121‧‧‧固定槽斜壁
PA12‧‧‧晶片
PA13‧‧‧引線
PA131‧‧‧晶片連接部
PA1311‧‧‧凸起結構
PA132‧‧‧引線接腳部
PA14‧‧‧封裝體
PAP‧‧‧平行方向
PAV‧‧‧垂直方向
PAW1、PAW2‧‧‧焊料
1‧‧‧具有封裝體卡固結構之晶片封裝元件
11‧‧‧基座
111‧‧‧基座面
1111‧‧‧晶片連接部
1112‧‧‧基座焊料容置凹槽
1113‧‧‧封裝體卡固結構
1114‧‧‧封裝體限位槽
11141‧‧‧限位斜壁
12‧‧‧晶片
13‧‧‧跨接連接結構
131‧‧‧連接結構本體
1311‧‧‧凸出結構
1312‧‧‧跨接結構限位凹槽
132‧‧‧跨接接腳
1321‧‧‧接腳彎折部
14‧‧‧引線結構
141‧‧‧引線凹槽
142‧‧‧引線接腳
15‧‧‧封裝體
M1‧‧‧第一平行方向
M2‧‧‧第二平行方向
S‧‧‧熱變形允差行程
V‧‧‧垂直方向
W1、W2、W3‧‧‧焊料
第一圖係顯示先前技術所提供之電路保護元件之示意圖；第二圖係顯示未封裝前之本創作較佳實施例所提供之具有封裝體卡固結構之晶片封裝元件之立體圖；第三圖係顯示第二圖之A-A剖面圖；第四圖係顯示本創作較佳實施例所提供之具有封裝體卡固結構之晶片封裝元件之立體圖；以及第五圖係顯示第四圖之B-B剖面圖。
請一併參閱第二圖至第五圖，第二圖係顯示未封裝前之本創作較佳實施例所提供之具有封裝體卡固結構之晶片封裝元件之立體圖；第三圖係顯示第二圖之A-A剖面圖；第四圖係顯示本創作較佳實施例所提供之具有封裝體卡固結構之晶片封裝元件之立體圖；第五圖係顯示第四圖之B-B剖面圖。如圖所示，本創作較佳實施例係提供一種具有封裝體卡固結構之晶片封裝元件1。具有封裝體卡固結構之晶片封裝元件1包含一基座11、一晶片12、一跨接連接結構13、一引線結構14與一封裝體15。
基座11具有一基座面111。基座面111設有一晶片連接部1111、一基座焊料容置凹槽1112、一封裝體卡固結構1113與二封裝體限位槽1114(在此僅標示其中一者，並以該者作說明)。晶片連接部1111為位於基座面111中央之區域，在本實施例中，晶片連接部1111為一平台，在其他實施例當中，晶片連接部1111可為一凸台，但不以此為限。基座焊料容置凹槽1112緊鄰且圍繞於晶片連接部1111而開設於基座面111。其中，基座焊料容置凹槽1112沿一平行於基座面111之第一平行方向M1與一垂直於第一平行方向M1且平行於基座面111之第二平行方向M2而開設，藉以圍繞晶片連接部1111。
封裝體卡固結構1113圍繞晶片連接部1111而開設於基座面111。其中，封裝體卡固結構1113 沿第一平行方向M1與第二平行方向M2而開設，藉以圍繞晶片連接部1111。在本實施例當中，封裝體卡固結構1113為一鳩尾槽，但在其他實施例當中不以此為限。封裝體限位槽1114開設於基座面111之邊緣，並具有一限位斜壁11141。
晶片12藉由一焊料W1焊接於晶片連接部1111。在本實施例當中，晶片12為瞬態抑制(Transient-voltage-suppression；TVS)二極體晶片，但在其他實施例當中，晶片12可為一般之二極體晶片、發光二極體(Light-emitting diode；LED)晶片、光電二極體晶片、蕭特基二極體晶片、隧道二極體晶片、變容二極體晶片與稽納二極體晶片，但不以此為限。
跨接連接結構13包含一連接結構本體131與一跨接接腳132。在連接結構本體131鄰近於晶片12之一側具有一朝向晶片12凸出且藉由一焊料W2焊接於晶片12之凸出結構1311。在本實施例當中，凸出結構1311為一凸台，在其他實施例當中並不以此為限。
此外，在連接結構本體131遠離於晶片12之一側開設有一跨接結構限位凹槽1312。跨接結構限位凹槽1312係背向晶片12且縱橫交錯地開設於連接結構本體131。簡單來說，跨接結構限位凹槽1312是以網格狀之外型開設在連接結構本體131。在本實施例當中，跨接結構限位凹槽1312為V型凹槽，但在其他實施例當中並不以此為限。跨接接腳132自連接結構本體131延伸出，且包含一接腳彎折部1321。接腳彎折部1321可朝第一平行 方向M1而伸縮。
引線結構14包含一引線凹槽141與一引線接腳142。引線凹槽141定義有一熱變形允差行程S。其中，連結於跨接接腳132藉由一焊料W3焊接於引線凹槽141之熱變形允差行程S。在本實施例當中，引線凹槽141為一弧型凹槽，熱變形允差行程S可為一直線型之熱變形允差行程或弧線型之熱變形允差行程，但在其他實施例當中並不以此為限。順帶一提，引線接腳142遠離於引線凹槽141之一端可朝基座11而彎曲。
封裝體15至少局部地包覆引線接腳142與基座11，且包覆晶片12、跨接連接結構13與引線凹槽141，並受封裝體卡固結構1113所卡固，且受封裝體限位槽1114之限位斜壁11141所限位。在本實施例當中，封裝體15之材質為聚醯亞胺矽氧烷(Polyimide Siloxane)，由聚醯亞胺矽氧烷構成之封裝體15具有良好的隔絕效果，可有效防止溼氣接觸晶片12。在其他實施例中，封裝體15之組成物並不以此為限。
當具有封裝體卡固結構之晶片封裝元件1導通高電壓電流而使基座11、跨接連接結構13與引線結構14之溫度升高並產生一熱變形作用時，位於晶片連接部1111之焊料W1雖然可能會因為溫度升高而液化，但液化的焊料W1會被導引至緊鄰於晶片連接部1111之基座焊料容置凹槽1112，避免了焊料W1、W2相互連接，進而防止基座11與跨接連接結構13形成短路。
另外，當基座11、跨接連接結構13與引線 結構14之溫度升高時，基座11、跨接連接結構13、引線結構14與封裝體15會因為溫度升高而膨脹，膨脹的基座11、跨接連接結構13、引線結構14與封裝體15會產生沿第一平行方向M1、第二平行方向M2與一垂直於基座面111之垂直方向V之應力。
膨脹的封裝體15會受應力作用而沿第一平行方向M1、第二平行方向M2與垂直方向V形變或位移，但由於封裝體15受卡固於封裝體卡固結構1113與受封裝體限位槽1114之限位斜壁11141所限位，因而防止了封裝體15與基座11相對於動。另外，跨接結構限位凹槽1312可卡固封裝體15而防止封裝體15與跨接連接結構13之間相對移動。
此外，當跨接連接結構13溫度升高而受到應力作用時，接腳彎折部1321可背向第一平行方向M1而拉伸，並使得跨接接腳132在熱變形允差行程S上活動，藉以釋放跨接連接結構13對晶片12作用之應力，進而防止晶片12受損。
綜上所述，在本創作所提供之具有封裝體卡固結構之晶片封裝元件中，基座焊料容置凹槽可在晶片與基座之間之焊料受熱時容置液化的焊料，封裝體卡固結構與封裝體限位槽可於封裝體受應力作用時防止封裝體與基座之間相對移動。此外，接腳彎折部用以在跨接連接結構受應力作用時，使跨接接腳可伸縮地在引線凹槽之熱變形允差行程上活動。
相較於先前技術，由於封裝體受卡固結構 與封裝體限位槽所固定，因此晶片不會因為受到應力之作用而有所損壞。由於在晶片與基座之間之焊料再受熱時會流至基座焊料容置凹槽，使得晶片與基座之間之焊料不會連結於晶片與跨接連接結構之間的焊料，因而避免了基座與跨接連接結構型成短路。由於在跨接連接結構受應力作用時，跨接接腳可藉由在引線凹槽之熱變形允差行程上活動，藉以釋放跨接連接結構所受到的應力，進而防止晶片因為承受應力而有所損壞。
藉此，解決了先前技術中，在電路保護元件流通高電壓之電流時，晶片容易因熱應力的作用而受到破壞之問題。此外，也解決了焊料之溫度驟然升高而使焊料因受熱而液化，而導致電路保護元件冷卻後基座與引線短路，使得電路保護元件故障之問題。
藉由以上較佳具體實施例之詳述，係希望能更加清楚描述本創作之特徵與精神，而並非以上述所揭露的較佳具體實施例來對本創作之範疇加以限制。相反地，其目的是希望能涵蓋各種改變及具相等性的安排於本創作所欲申請之專利範圍的範疇內。
1‧‧‧具有封裝體卡固結構之晶片封裝元件
11‧‧‧基座
111‧‧‧基座面
1111‧‧‧晶片連接部
1112‧‧‧基座焊料容置凹槽
1113‧‧‧封裝體卡固結構
1114‧‧‧封裝體限位槽
11141‧‧‧限位斜壁
12‧‧‧晶片
13‧‧‧跨接連接結構
131‧‧‧連接結構本體
1311‧‧‧凸出結構
1312‧‧‧跨接結構限位凹槽
132‧‧‧跨接接腳
1321‧‧‧接腳彎折部
14‧‧‧引線結構
141‧‧‧引線凹槽
142‧‧‧引線接腳
15‧‧‧封裝體
M1‧‧‧第一平行方向
S‧‧‧熱變形允差行程
V‧‧‧垂直方向
W1、W2、W3‧‧‧焊料

Claims (10)

  1. 一種具有封裝體卡固結構之晶片封裝元件，係用以耦接於一功能電路，並包含：一基座，係具有一基座面，該基座面係設有一晶片連接部與一圍繞該晶片連接部之封裝體卡固結構；一晶片，係連結於該晶片連接部；一跨接連接結構，係焊接於該晶片，並在導通一高電壓電流時產生一熱變形作用；一引線結構，係包含一定義有一熱變形允差行程之引線凹槽，其中，在該跨接連接結構受該熱變形作用後沿該熱變形允差行程可移動地設置並焊接連結於該引線凹槽；以及一封裝體，係至少局部地包覆該引線結構與該基座，包覆該晶片與該跨接連接結構，並卡固於該封裝體卡固結構。
  2. 如申請專利範圍第1項所述之具有封裝體卡固結構之晶片封裝元件，其中，該封裝體卡固結構係一鳩尾槽。
  3. 如申請專利範圍第1項所述之具有封裝體卡固結構之晶片封裝元件，其中，該基座面係開設有一緊鄰於該晶片連接部之基座焊料容置凹槽。
  4. 如申請專利範圍第3項所述之具有封裝體卡 固結構之晶片封裝元件，其中，該基座焊料容置凹槽係圍繞該晶片連接部而開設於該基座面。
  5. 如申請專利範圍第1項所述之具有封裝體卡固結構之晶片封裝元件，其中，該跨接連接結構係包含一連接結構本體，該連接結構本體鄰近於該晶片之一側係具有一朝向該晶片凸出且焊接於該晶片之凸出結構。
  6. 如申請專利範圍第1項所述之具有封裝體卡固結構之晶片封裝元件，其中，該跨接連接結構係包含一連接結構本體，該連接結構本體遠離於該晶片之一側係具有一用以限位該封裝體之跨接結構限位凹槽。
  7. 如申請專利範圍第6項所述之具有封裝體卡固結構之晶片封裝元件，其中，該跨接結構限位凹槽係背向該晶片且縱橫交錯地開設於該連接結構本體。
  8. 如申請專利範圍第6項所述之具有封裝體卡固結構之晶片封裝元件，其中，該跨接結構限位凹槽係一V型凹槽。
  9. 如申請專利範圍第1項所述之具有封裝體卡固結構之晶片封裝元件，其中，該跨接連接結構係包含：一連接結構本體，係連接於該晶片；以及一跨接接腳，係自該連接結構本體延伸出，且包含一接 腳彎折部，該接腳彎折部係用以在該跨接連接結構受該熱變形作用時，使該跨接接腳可伸縮地於該熱變形允差行程上活動。
  10. 如申請專利範圍第1項所述之具有封裝體卡固結構之晶片封裝元件，其中，該基座面之邊緣係開設有至少一封裝體限位槽，該至少一封裝體限位槽係具有一用以限位該封裝體之限位斜壁。
TW106206587U 2017-05-09 2017-05-09 具有封裝體卡固結構之晶片封裝元件 TWM549451U (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW106206587U TWM549451U (zh) 2017-05-09 2017-05-09 具有封裝體卡固結構之晶片封裝元件
US15/644,232 US10037964B1 (en) 2017-05-09 2017-07-07 Die-packaging component with retaining structure for package body thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW106206587U TWM549451U (zh) 2017-05-09 2017-05-09 具有封裝體卡固結構之晶片封裝元件

Publications (1)

Publication Number Publication Date
TWM549451U true TWM549451U (zh) 2017-09-21

Family

ID=60764325

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106206587U TWM549451U (zh) 2017-05-09 2017-05-09 具有封裝體卡固結構之晶片封裝元件

Country Status (2)

Country Link
US (1) US10037964B1 (zh)
TW (1) TWM549451U (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108155109A (zh) * 2017-12-29 2018-06-12 山东才聚电子科技有限公司 一种芯片的管脚焊接方法
CN110544681A (zh) * 2018-05-29 2019-12-06 株式会社加藤电器制作所 半导体模块

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110544675A (zh) * 2018-05-29 2019-12-06 株式会社加藤电器制作所 半导体模块

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7001798B2 (en) * 2001-11-14 2006-02-21 Oki Electric Industry Co., Ltd. Method of manufacturing semiconductor device
US6897550B1 (en) * 2003-06-11 2005-05-24 Amkor Technology, Inc. Fully-molded leadframe stand-off feature
JP2007165714A (ja) * 2005-12-15 2007-06-28 Renesas Technology Corp 半導体装置
JP4916745B2 (ja) * 2006-03-28 2012-04-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
WO2011142006A1 (ja) * 2010-05-12 2011-11-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5930680B2 (ja) * 2011-11-30 2016-06-08 株式会社日立製作所 半導体装置およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108155109A (zh) * 2017-12-29 2018-06-12 山东才聚电子科技有限公司 一种芯片的管脚焊接方法
CN110544681A (zh) * 2018-05-29 2019-12-06 株式会社加藤电器制作所 半导体模块

Also Published As

Publication number Publication date
US10037964B1 (en) 2018-07-31

Similar Documents

Publication Publication Date Title
JP3274642B2 (ja) 圧縮可能なヒートシンク構造を有する電子パッケージ及びその製造方法
CN109314063B (zh) 电力用半导体装置
JP5695069B2 (ja) 電子部品
TWM549451U (zh) 具有封裝體卡固結構之晶片封裝元件
US6849942B2 (en) Semiconductor package with heat sink attached to substrate
JPWO2009001564A1 (ja) 半導体素子の実装構造体及びその製造方法、半導体素子の実装方法、並びに加圧ツール
CN103378042A (zh) 半导体封装模块
TWI635581B (zh) 具有跨接連接結構之晶片封裝元件及其製作方法
JP2013247274A (ja) 半導体パッケージ及び配線基板ユニット
CN109698179B (zh) 半导体装置及半导体装置的制造方法
US20100186939A1 (en) Attaching structure of component for mounting heating element
WO2016024333A1 (ja) 半導体モジュール
JPH06260532A (ja) フリップチップの接続構造
US20030174469A1 (en) Electronics assembly with improved heatsink configuration
US7078629B2 (en) Multilayer wiring board
KR20100056410A (ko) 보조접촉스프링이 초기응력을 받는 전력반도체 스프링
CN102163580B (zh) 一种薄型封装体及其制作方法
JP2008235674A (ja) パワーモジュール及び車両用インバータ
JP2016076727A (ja) 半導体装置
JP2009525593A (ja) 電子モジュールとこのようなモジュールの組立方法
TWI546914B (zh) 部分圓頂封裝技術
JPWO2021111563A5 (zh)
JP2017135148A (ja) 半導体装置
JP6743439B2 (ja) 半導体装置および半導体装置の製造方法
TWI397665B (zh) 散熱組件及其製作方法