TWI546914B - 部分圓頂封裝技術 - Google Patents

部分圓頂封裝技術 Download PDF

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TWI546914B
TWI546914B TW103135291A TW103135291A TWI546914B TW I546914 B TWI546914 B TW I546914B TW 103135291 A TW103135291 A TW 103135291A TW 103135291 A TW103135291 A TW 103135291A TW I546914 B TWI546914 B TW I546914B
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package
electronic device
semiconductor device
circuit board
bonding
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TW103135291A
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TW201605003A (zh
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蔡佳龍
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立景光電股份有限公司
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Description

部分圓頂封裝技術
本發明關於電子元件的封裝，特指一種使用不同封裝體，對一電子裝置的打線接合(wire bond)進行封裝的部分圓頂封裝(partial glob-top encapsulation)的技巧，以及相關方法。
所謂的圓頂封裝(glob-top encapsulation)是一種表面塗覆(conformal coating)封裝技術，其可用於保護Chip-on-board(COB)組裝元件的裸晶粒(bare die)以及接線。在COB組裝中，裸晶粒直接黏合在電路板上，而裸晶粒又以打線接合的方式，與電路板上的連接墊(contact pad)電性連接。圓頂封裝技術藉由將封膠材料，例如：環氧樹脂(epoxy)或矽氧樹酯(silicone)，塗覆在裸晶粒、金屬導線、接合點上，並將其固化後形成封裝體，從而提供一層屏障來阻絕應力、汙染物、熱衝擊、以及濕氣。
在某些光學相關的應用上，如液晶覆矽(Liquid Crystal on Silicon,LCoS)顯示裝置，其在裸晶粒，或者是矽背板(silicon backplane)的上方會覆蓋一層保護玻璃(保護玻璃)。並且，封裝體只覆蓋晶粒的部分區域，而未覆蓋整個保護玻璃。這種封裝方式被稱作為部分圓頂封裝(partial glob-top encapsulation)。在這種技術中，有時候由於保護玻璃的邊緣與晶粒的側邊並未切齊，因此可能在晶粒的轉角處形成一凹口，進而產生對封裝體之斷裂韌性(fracture toughness)有不良影響的凹口效應(notch effect)。
請參考第1圖，該圖繪示一種習知的部分圓頂封裝技術。其中， 晶粒110透過金屬導線130，電性連接至一電路板120。而在晶粒110的上方則有一層保護玻璃，並且，由封膠材料經過固化處理形成的封裝體150，覆蓋在金屬導線130與接合點160上。一般來說，為了抵抗外在應力，封裝體150必需足夠堅硬，然而，由於保護玻璃140的側面142並未與晶粒110的側面112切齊，因此凹口170會在晶粒110的轉角處形成。如此一來便容易引發凹口效應(notch effect)，這個效應會使得封裝體150變脆。這是因為應力會集中在凹口170，因此造成封裝體150的疲勞性破壞。當封裝體150越硬時，這個效應越明顯。
最簡單的解決方法就是使用較軟的封膠材料來形成封裝體150，然而，這樣可能會使封裝體150的保護性不足，而無法抵抗外部應力，以至於金屬導線130與接合點160對於物理破壞的耐受度較差。因此，有必要提供一種創新的方式來解決以上的問題。
有鑑於此，本發明提供一種混合式的封裝技術，主要透過在接線的不同側使用不同的封裝體來包覆接合線以及接合點。
本發明之一實施例提供一電子裝置，該電子裝置包含：一電路板；一半導體裝置，設置於該電路板上；一保護材料，設置於該半導體裝置上方；複數條接合線，分別連接於該半導體裝置上的複數個第一連接墊以及該電路板上的複數個第二連接墊之間；一第一封裝體，由一第一材料所形成，用來封裝每一條接合線的一部分線體，以及封裝複數個第二接合點，其中，該些第二接合點由該些接合線與該些第二連接墊連接所形成；以及一第二封裝體，由一第二材料所形成，該第二材料不同於該第一材料，該第二封裝體用來封裝複數個第一接合點，其中該些第一接合點由該些接合線與該些第一連接墊連接所形成。
本發明之另一實施例一種封裝一電子裝置的方法。該電子裝置具有一電路板，且一半導體裝置設置於該電路板上，並且透過複數條接合線與該電路板電性連接。一保護材料設置於該半導體裝置的上方。該方法包含：將一第一材料塗覆在該電路板上的複數個第二接合點，以及每一條接合線的一部分線體，並且將該第一材料固化，形成一第一封裝體，該第二接合點連接於該些接合線；以及將一第二材料塗覆在該半導體裝置上的複數個第一接合點，並且將該第二材料固化，形成一第二封裝體，其中該第一接合點連接於該些接合線。
100、200‧‧‧電子裝置
110‧‧‧裸晶粒
112、142‧‧‧側面
120、220‧‧‧電路板
130‧‧‧金屬導線
140‧‧‧保護玻璃
150、252、254‧‧‧封裝體
160‧‧‧接合點
170‧‧‧凹口
210‧‧‧半導體裝置
230‧‧‧接合線
232、234‧‧‧連接墊
240‧‧‧保護材料
262、264‧‧‧接合點
280‧‧‧半導體裝置之表面區域
290‧‧‧空間
第1圖繪示習知的圓頂封裝技術。
第2圖繪示本發明電子裝置之一實施例。
第3圖為第2圖之電子裝置之一側視圖。
第4圖為本發明之一實施例之封裝一電子裝置的方法的流程圖。
請參考第2圖，該圖繪示本發明之一實施例的電子裝置200。如圖所示，半導體裝置210黏合在電路板220上。在本發明不同實施例中，電路板220可為一般的印刷電路板或者是軟性印刷電路板(flexible printed circuit)。半導體裝置210可能為裸晶粒或者是液晶覆矽裝置的矽背板，而電子裝置200可能是一個液晶覆矽裝置，或者是一個COB組裝元件。保護材料240設置在半導體裝置210的上方，其可為一保護玻璃。
半導體裝置210與電路板220之間以複數條金屬接合線(bonding wires)230(如：鋁線)相連。複數個第一接合點264，由接合線230的第一端分別與半導體裝置210上的連接墊234電性連接(例如：焊接)所形成。複數個第 二接合點262，由接合線230的第二端分別與電路板220上的連接墊232電性連接所形成。
第一封裝體252由第一材料所形成，第一材料不同於形成第二封裝體254的第二材料。再者，第一封裝體252比第二封裝體254更為堅硬。第一封裝體252與第二封裝體254分別覆蓋在第二接合點262以及第一接合點264上。第一封裝體252將每一條接合線230的大部分線體封裝起來，此外，每一條接合線230靠近第一接合點264的第二端則由第二封裝體254所封裝。
由於第一封裝體252將每一條接合線230的大部分線體封裝，基於異質材料接合(heterogeneous materials joint)的原因，必須將材料間的熱膨脹係數(coefficient of thermal expansion,CTE)的匹配納入考慮。也就是，第一封裝體252的熱膨脹係數必須不大於接合線230的熱膨脹係數，否則，將會形成內部應力，對接合線230產生拉扯的現象。舉例來說，若接合線230為鋁線，並且熱膨脹係數為24ppm/K，那麼第一封裝體252的熱膨脹係數必定不能超過24ppm/K。在一實施例中，第一封裝體252較佳地具有介於5ppm/K與24ppm/K之間的熱膨脹係數。
第一封裝體252藉由紫外光(ultraviolet)照射該第一材料後固化而形成。在紫外光固化過程中，第一材料可能會發生固化收縮(curing shrinkage)的現象。為了避免固化收縮造成應力產生在接合線230上、第二接合點262上，或者是半導體裝置210上，第一材料的固化收縮率必須不大於0.3%。
另外，為了對第二接合點262與接合線230提供良好保護，第一封裝體252必須具備一定的硬度。較佳地，第一封裝體252之蕭氏硬度(shore hardness)大於80D，從而提升對物理性破壞或外部應力的耐受度。另外，第一封裝體252的玻璃轉移溫度(glass transition temperature)大於85℃,，進而 確保第一封裝體252在多數的情況下都有較低的熱膨脹係數。
第二封裝體254僅包覆接合線230的第二端、第一接合點264，並且覆蓋在半導體裝置210的表面區域280上。第二封裝體254的蕭氏硬度小於第一封裝體252。較佳地，第二封裝體254的蕭氏硬度係介於35D與70D之間。第二封裝體254可為第一接合點264、接合線230的第二端、以及半導體裝置210提供絕緣以及隔濕的效果。第一封裝體252則可以保護以及強化接合線230以及第二接合點262。
相較於習知技術，第一封裝體252的形狀小於封裝體150，因此第一封裝體252有較小的受力面積，因此受到外部應力的影響也比較小。舉例來說，由保護材料240所產生的應力便不會直接施加在第一封裝體252上；然而，在單一封裝體的技術中，保護玻璃產生的應力卻會直接施加在封裝體上。因此，本發明的第一封裝體252較不易破裂。另外，在第一封裝體252內部，對接合線230進行拉扯的內部應力也比較少。由於半導體裝置210的轉角處由具有不同硬度的封裝體所覆蓋，而非單一封裝體，所以凹口效應可被消除。這是因為硬度較低的封裝體可以吸收部份的外部應力。
第3圖為第2圖所示的電子裝置的斜視圖。如圖所示，第二封裝體254不僅覆蓋於第一接合點264，以及接合線230的第二端，而且延伸於半導體裝置210與保護材料240之間。相似地，第一封裝體252不僅覆蓋於第二接合點262，以及接合線230的大部分線體，而且延伸於半導體裝置210以及電路板220之間。
第4圖為本發明封裝一電子裝置之方法之一實施例的流程圖。該方法可用來封裝如第2圖所示的電子裝置200，或者是任何具有相似結構的 電子裝置。為了解釋上的方便，以下將結合電子裝置200進行本發明方法的解釋。然而，這並非本發明方法在應用上的限制。
首先，在步驟410中，一第一材料被塗覆在第二接合點262與接合線230上，並進行紫外光固化程序來固化第一材料，形成一第一封裝體252，從而封裝第二接合點262以及接合線230。詳細地說，第一材料一開始被塗覆在第二接合點262以及接合線230的周遭。基於毛細現象，第一材料會沿著接合線230上升，直到充滿接合線230下方的空間290。之後，第一材料就固化成第一封裝體252。
在步驟420中，第二材料被塗覆在未被第一封裝體252覆蓋的第一接合點264以及半導體裝置210的表面區域280上。同樣地，紫外光固化程序被進行，以固化第二材料，形成第二封裝體254，從而覆蓋第一接合點264、接合線230的第二端以及表面區域280。
總結來說，混合式封裝技巧擁有比使用單一封裝體之封裝更佳的可靠度，對於環境(熱與溼氣)或外力都有較佳耐受度。此外，在接合線一端的接合點上使用較硬的封裝體，並且在另一端的接合點上使用較軟的封裝體，可以形成一種不會脆裂的可靠封裝。其中，較硬的封裝體可以保護接合線免於遭受物理性破壞，如：外力與熱衝擊，而較軟的封裝體則可吸收外部應力，避免凹口效應的發生。
以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
200‧‧‧電子裝置
210‧‧‧半導體裝置
220‧‧‧電路板
230‧‧‧接合線
240‧‧‧保護材料
232、234‧‧‧連接墊
252、254‧‧‧封裝體
262、264‧‧‧接合點
280‧‧‧半導體裝置之表面區域
290‧‧‧空間

Claims (21)

  1. 一種電子裝置，包含：一電路板；一半導體裝置，設置於該電路板上；一保護材料，設置於該半導體裝置上方；複數條接合線，分別連接於該半導體裝置上的複數個第一連接墊以及該電路板上的複數個第二連接墊之間；一第一封裝體，由一第一材料所形成，用來封裝每一接合線的一部分線體，以及封裝複數個第二接合點，其中，該些第二接合點由該些接合線與該些第二連接墊連接所形成；以及一第二封裝體，由一第二材料所形成，該第二材料不同於該第一材料，該第二封裝體用來封裝複數個第一接合點，其中，該些第一接合點由該些接合線與該些第一連接墊連接所形成，且該第二封裝體與該些第一接合點有所接觸。
  2. 如請求項1所述的電子裝置，其中該第一封裝體與該第二封裝體有所接觸。
  3. 如請求項1所述的電子裝置，其中該保護材料之一側面未與該半導體裝置之一側面切齊。
  4. 如請求項1所述的電子裝置，其中該第一封裝體覆蓋於該半導體裝置的一第一表面上，以及該第二封裝體覆蓋於該半導體裝置之一第二表面的一部份。
  5. 如請求項1所述的電子裝置，其中該第一封裝體在該半導體裝置與該電路 板之間延伸；以及該第二封裝體在該半導體裝置與該保護材料之間延伸。
  6. 如請求項1所述的電子裝置，其中該保護材料為一保護玻璃。
  7. 如請求項1所述的電子裝置，其中該電路板為一印刷電路板或者是一軟性印刷電路板。
  8. 如請求項1所述的電子裝置，其中該半導體裝置為的一液晶覆矽(liquid crystal on silicon,LCoS)裝置的一矽背板(silicon backplane)或為一裸晶粒(bare die)。
  9. 如請求項1所述的電子裝置，其中該第一封裝體的蕭式硬度(shore hardness)大於該第二封裝體的蕭式硬度。
  10. 如請求項1所述的電子裝置，其中該第一封裝體的熱膨脹係數(coefficient of thermal expansion,CTE)不大於該些接合線的熱膨脹係數。
  11. 如請求項1所述的電子裝置，其中該第一封裝體的熱膨脹係數介於5ppm/K與24ppm/K之間。
  12. 如請求項1所述的電子裝置，其中該第一材料之玻璃轉換溫度(glass transition temperature)大於85℃。
  13. 如請求項1所述的電子裝置，其中該第一材料的固化收縮率(curing shrinkage)不大於0.3%。
  14. 一種封裝一電子裝置的方法，該電子裝置具有一電路板以及一半導體裝置，該半導體裝置設置於該電路板上，並且透過複數條接合線與該電路板電性連接，一保護材料設置於該半導體裝置的上方，該方法包含：將一第一材料塗覆在該電路板上的複數個第二接合點以及每一條接合線的一部分線體上，並且將該第一材料固化，形成一第一封裝體，其中，該些第二接合點連接於該些接合線；以及將一第二材料塗覆在該半導體裝置上的複數個第一接合點上，並且將該第二材料固化，形成一第二封裝體，其中，該些第一接合點連接於該些接合線，且該第二封裝體與該些第一接合點有所接觸。
  15. 如請求項14所述之方法，其中該第一封裝體與該第二封裝體有所接觸。
  16. 如請求項14所述之方法，該第一封裝體在該半導體裝置與該電路板之間延伸；以及該第二封裝體在該半導體裝置與該保護材料之間延伸。
  17. 如請求項14所述之方法，該第一封裝體的蕭式硬度大於該第二封裝體的蕭式硬度。
  18. 如請求項14所述之方法，其中第一封裝體的熱膨脹係數不大於該些接合線的熱膨脹係數。
  19. 如請求項14所述之方法，其中該第一封裝體的熱膨脹係數介於5ppm/K與24ppm/K之間。
  20. 如請求項14所述之方法，其中該第一材料之玻璃轉換溫度大於85℃。
  21. 如請求項14所述之方法，其中該第一材料的固化收縮率不大於0.3%。
TW103135291A 2014-07-31 2014-10-09 部分圓頂封裝技術 TWI546914B (zh)

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