JP2013105898A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 238000001312 dry etching Methods 0.000 claims abstract description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 150000004767 nitrides Chemical class 0.000 claims description 9
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical group [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 claims description 4
- CQBLUJRVOKGWCF-UHFFFAOYSA-N [O].[AlH3] Chemical group [O].[AlH3] CQBLUJRVOKGWCF-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 claims 4
- 230000015556 catabolic process Effects 0.000 description 25
- 238000001020 plasma etching Methods 0.000 description 14
- 229910002601 GaN Inorganic materials 0.000 description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 8
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910018516 Al—O Inorganic materials 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910007991 Si-N Inorganic materials 0.000 description 3
- 229910006294 Si—N Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
【解決手段】本発明は、半導体層内に、活性領域30を含むFET34、活性領域30からなるスクライブライン36、FET34とスクライブライン36との間に位置する不活性領域32、及び不活性領域32を横断してFET34とスクライブライン36とを電気的に接続する接続領域38を設ける工程と、半導体層上に絶縁膜20を形成する工程と、ドライエッチング法により絶縁膜20に選択的に開口部21を形成する工程と、を有する半導体装置である。
【選択図】図2
Description
原料、キャリアガス及び流量:
シラン(SiH4):アンモニア(NH3):窒素(N2):ヘリウム(He)=3〜6:0〜2:100〜600:500〜900sccm(5.07×10−3〜10.14×10−3:0〜3.38×10−3:1.69×10−1〜1.014:8.45×10−1〜1.52Pa・m3/s)
成長圧力:0.5〜1.8Torr(66.65〜239.94Pa)
成長温度:200〜400℃
RF(Radio Frequency:高周波)電力:25〜150W
例えばRIE等のドライエッチング法により、絶縁層20に開口部を形成する。図13(a)に示すように、例えば蒸着法等により、ソース電極22及びドレイン電極24を設ける。
12 下地層
13 動作層
14 GaN層
16 電子供給層
18 キャップ層
20 絶縁層
22 ソース電極
24 ドレイン電極
26 ゲート電極
30 活性領域
31 FET領域
32 不活性領域
34 FET
36 スクライブライン
38 接続領域
Claims (10)
- 半導体層内に第1活性領域、第2活性領域、前記第1活性領域と第2活性領域との間に位置する不活性領域、及び前記不活性領域を横断して前記第1活性領域と前記第2活性領域とを電気的に接続する第3活性領域を設ける工程と、
前記半導体層上に絶縁膜を形成する工程と、
ドライエッチング法により前記絶縁膜に選択的に開口部を形成する工程と、を有することを特徴とする半導体装置の製造方法。 - 前記不活性領域は、前記第1活性領域を包囲してなることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記第2活性領域はスクライブラインであることを特徴とする請求項1又は2記載の半導体装置の製造方法。
- 前記第1活性領域は複数設けられ、前記複数の第1活性領域のそれぞれが前記第3活性領域によって前記第2活性領域と電気的に接続されてなることを特徴とする請求項3記載の半導体装置の製造方法。
- 前記第1活性領域は電界効果トランジスタのチャネル層として機能する層を含み、
前記第2活性領域及び前記第3活性領域は、前記第1活性領域と同じ層構造を有することを特徴とする請求項1から4いずれか一項記載の半導体装置の製造方法。 - 前記絶縁膜は、FTIRのシリコン−窒素伸縮振動のピークの位置が2160cm−1以下である窒化シリコン、又はFTIRのアルミニウム−酸素伸縮振動のピークの位置が960cm−1以上である酸化アルミニウムからなることを特徴とする請求項1から5いずれか一項記載の半導体装置の製造方法。
- 第1活性領域及び不活性領域を有する半導体層上に、FTIRのシリコン−窒素伸縮振動のピークの位置が2160cm−1以下である窒化シリコン、又はFTIRのアルミニウム−酸素伸縮振動のピークの位置が960cm−1以上である酸化アルミニウムからなる絶縁層を形成する工程と、
ドライエッチング法により、前記絶縁膜に選択的に開口部を形成する工程と、を有することを特徴とする半導体装置の製造方法。 - 前記半導体層は第2活性領域からなるスクライブラインを有し、
前記絶縁層は前記スクライブライン上に延在するように設けられていることを特徴とする請求項7記載の半導体装置の製造方法。 - 前記半導体層は窒化物半導体からなることを特徴とする請求項1から8いずれか一項記載の半導体装置の製造方法。
- 前記ドライエッチング法は、RIE法、ICP法およびECR法の何れかを用いて実行されることを特徴とする請求項1から9いずれか一項記載の半導体装置の製造方法。
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JP2016162891A (ja) * | 2015-03-02 | 2016-09-05 | 住友電気工業株式会社 | 半導体装置、半導体装置の製造方法 |
JP2021077913A (ja) * | 2015-08-31 | 2021-05-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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