JP2013033812A - パワー半導体モジュール - Google Patents

パワー半導体モジュール Download PDF

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Publication number
JP2013033812A
JP2013033812A JP2011168469A JP2011168469A JP2013033812A JP 2013033812 A JP2013033812 A JP 2013033812A JP 2011168469 A JP2011168469 A JP 2011168469A JP 2011168469 A JP2011168469 A JP 2011168469A JP 2013033812 A JP2013033812 A JP 2013033812A
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JP
Japan
Prior art keywords
conductive layer
transistor
semiconductor module
power semiconductor
ceramic substrate
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Withdrawn
Application number
JP2011168469A
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English (en)
Japanese (ja)
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JP2013033812A5 (enExample
Inventor
Kohei Matsui
康平 松井
Satoshi Tanimoto
谷本　　智
Yoshinori Murakami
善則 村上
Yusuke Zushi
祐輔 図子
Shinji Sato
伸二 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Nissan Motor Co Ltd
Sanken Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Nissan Motor Co Ltd
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Nissan Motor Co Ltd, Sanken Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP2011168469A priority Critical patent/JP2013033812A/ja
Priority to PCT/JP2012/069512 priority patent/WO2013018811A1/ja
Publication of JP2013033812A publication Critical patent/JP2013033812A/ja
Publication of JP2013033812A5 publication Critical patent/JP2013033812A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
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    • H01L2924/1025—Semiconducting materials
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    • H01L2924/1033—Gallium nitride [GaN]
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H—ELECTRICITY
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    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
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    • H01L2924/1306—Field-effect transistor [FET]
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
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    • H01L2924/30—Technical effects
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    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)
  • Dc-Dc Converters (AREA)
JP2011168469A 2011-08-01 2011-08-01 パワー半導体モジュール Withdrawn JP2013033812A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011168469A JP2013033812A (ja) 2011-08-01 2011-08-01 パワー半導体モジュール
PCT/JP2012/069512 WO2013018811A1 (ja) 2011-08-01 2012-07-31 パワー半導体モジュール

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011168469A JP2013033812A (ja) 2011-08-01 2011-08-01 パワー半導体モジュール

Publications (2)

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JP2013033812A true JP2013033812A (ja) 2013-02-14
JP2013033812A5 JP2013033812A5 (enExample) 2013-03-28

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JP2011168469A Withdrawn JP2013033812A (ja) 2011-08-01 2011-08-01 パワー半導体モジュール

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JP (1) JP2013033812A (enExample)
WO (1) WO2013018811A1 (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013055278A (ja) * 2011-09-06 2013-03-21 Mitsubishi Electric Corp 電力用半導体スイッチおよび電力変換装置
JP2015185630A (ja) * 2014-03-24 2015-10-22 日産自動車株式会社 ハーフブリッジパワー半導体モジュール及びその製造方法
WO2016002385A1 (ja) * 2014-07-03 2016-01-07 日産自動車株式会社 ハーフブリッジパワー半導体モジュール及びその製造方法
WO2017002390A1 (ja) * 2015-06-30 2017-01-05 シャープ株式会社 回路モジュール
WO2017090281A1 (ja) * 2015-11-25 2017-06-01 シャープ株式会社 モジュール基板
WO2017163612A1 (ja) * 2016-03-24 2017-09-28 株式会社日立製作所 パワー半導体モジュール
US10600765B2 (en) 2015-10-22 2020-03-24 Mitsubishi Electric Corporation Semiconductor device and method for producing the same
US10756057B2 (en) 2014-11-28 2020-08-25 Nissan Motor Co., Ltd. Half-bridge power semiconductor module and method of manufacturing same
CN113179038A (zh) * 2020-01-09 2021-07-27 三菱电机株式会社 半导体装置
WO2025057452A1 (ja) * 2023-09-14 2025-03-20 株式会社 東芝 半導体装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014091608A1 (ja) * 2012-12-13 2014-06-19 株式会社 日立製作所 パワー半導体モジュール及びこれを用いた電力変換装置
DE102013008193A1 (de) * 2013-05-14 2014-11-20 Audi Ag Vorrichtung und elektrische Baugruppe zum Wandeln einer Gleichspannung in eine Wechselspannung
WO2016131693A1 (en) 2015-02-17 2016-08-25 Koninklijke Philips N.V. Ceramic substrate and method for producing a ceramic substrate
CN110783323B (zh) * 2019-09-10 2024-08-02 杭州泰昕微电子有限公司 一种应用于逆变焊机的大功率集成器件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3723869B2 (ja) * 2001-03-30 2005-12-07 株式会社日立製作所 半導体装置
JP3825309B2 (ja) * 2001-11-30 2006-09-27 京セラ株式会社 インバータ制御モジュール
JP2009182261A (ja) * 2008-01-31 2009-08-13 Rohm Co Ltd 半導体装置
JP5185956B2 (ja) * 2010-01-06 2013-04-17 三菱電機株式会社 電力用半導体装置

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013055278A (ja) * 2011-09-06 2013-03-21 Mitsubishi Electric Corp 電力用半導体スイッチおよび電力変換装置
JP2015185630A (ja) * 2014-03-24 2015-10-22 日産自動車株式会社 ハーフブリッジパワー半導体モジュール及びその製造方法
WO2016002385A1 (ja) * 2014-07-03 2016-01-07 日産自動車株式会社 ハーフブリッジパワー半導体モジュール及びその製造方法
US20170154877A1 (en) * 2014-07-03 2017-06-01 Nissan Motor Co., Ltd. Half-bridge power semiconductor module and manufacturing method therefor
JPWO2016002385A1 (ja) * 2014-07-03 2017-06-08 日産自動車株式会社 ハーフブリッジパワー半導体モジュール及びその製造方法
US10522517B2 (en) 2014-07-03 2019-12-31 Nissan Motor Co., Ltd. Half-bridge power semiconductor module and manufacturing method therefor
US10756057B2 (en) 2014-11-28 2020-08-25 Nissan Motor Co., Ltd. Half-bridge power semiconductor module and method of manufacturing same
WO2017002390A1 (ja) * 2015-06-30 2017-01-05 シャープ株式会社 回路モジュール
US10600765B2 (en) 2015-10-22 2020-03-24 Mitsubishi Electric Corporation Semiconductor device and method for producing the same
WO2017090281A1 (ja) * 2015-11-25 2017-06-01 シャープ株式会社 モジュール基板
JPWO2017163612A1 (ja) * 2016-03-24 2018-09-27 株式会社日立製作所 パワー半導体モジュール
WO2017163612A1 (ja) * 2016-03-24 2017-09-28 株式会社日立製作所 パワー半導体モジュール
CN113179038A (zh) * 2020-01-09 2021-07-27 三菱电机株式会社 半导体装置
JP2021112025A (ja) * 2020-01-09 2021-08-02 三菱電機株式会社 半導体装置
CN113179038B (zh) * 2020-01-09 2024-09-17 三菱电机株式会社 半导体装置
WO2025057452A1 (ja) * 2023-09-14 2025-03-20 株式会社 東芝 半導体装置

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