JP2013033812A - パワー半導体モジュール - Google Patents
パワー半導体モジュール Download PDFInfo
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Abstract
【解決手段】本発明のパワー半導体モジュール(1)は、第1セラミック基板(11)と、第1セラミック基板の一方の主面に配置された第1導電層(21)と、第1セラミック基板の他方の主面において第1導電層と対向する領域に配置された第2導電層(22)と、シリコンよりバンドギャップの広い材料で構成され、第1導電層の表面に配置されたトランジスタ(33a、33b)と、前記トランジスタのスイッチングによって第1導電層及び第2導電層に逆向きの電流変化が発生するように第1導電層と第2導電層とを電気的に接続する接続部材(35a)と、第2導電層の表面に一方の主面が接触するように配置された第2セラミック基板(12)と、第2導電層と絶縁されるように第2セラミック基板の他方の主面に配置された第3導電層(23)と、を備える。
【選択図】図1
Description
以下、本発明の実施の形態について添付図面を参照して詳細に説明する。図1は、本実施の形態に係るパワー半導体モジュールの構成例を示す模式図である。図1Aは素子配置面側から見た平面模式図であり、図1Bは導電性ワイヤを含むように示した断面模式図である。図1に示すように、パワー半導体モジュール1は、支持部材となる第1セラミック基板11を含んで構成されている。第1セラミック基板11は、窒化ケイ素、窒化アルミニウム、又は酸化アルミニウムなどの絶縁性の材料で構成された平面形状が略長方形の基板である。
11 第1セラミック基板
12 第2セラミック基板
21 第1導電層
21a、21b、21c、21d、21e、21f 金属板
22 第2導電層
23 第3導電層
31a、31b 外部接続端子
32a、32b ダイオード
33a、33b トランジスタ
34a、34b、34c、34d、34e、34f、34g 導電性ワイヤ
35a、35b 接続部材
36 出力端子
37 インダクタンス負荷
41 放熱部材
42 銅ベース
43 ボルト
44 冷却フィン
Claims (6)
- 第1セラミック基板と、
前記第1セラミック基板の一方の主面に配置された第1導電層と、
前記第1セラミック基板の他方の主面において前記第1導電層と対向する領域に配置された第2導電層と、
シリコンよりバンドギャップの広い材料で構成され、前記第1導電層の表面に配置されたトランジスタと、
前記トランジスタのスイッチングによって前記第1導電層及び前記第2導電層に逆向きの電流変化が発生するように前記第1導電層と前記第2導電層とを電気的に接続する接続部材と、
前記第2導電層の表面に一方の主面が接触するように配置された第2セラミック基板と、
前記第2導電層と絶縁されるように前記第2セラミック基板の他方の主面に配置された第3導電層と、を備えたことを特徴とするパワー半導体モジュール。 - 前記第3導電層の表面に接する放熱部材を備えたことを特徴とする請求項1に記載のパワー半導体モジュール。
- 前記トランジスタは、電界効果型トランジスタ又はIGBTであることを特徴とする請求項1又は請求項2に記載のパワー半導体モジュール。
- 前記トランジスタは、200℃以上の温度条件において使用可能なワイドバンドギャップ材料で構成されたことを特徴とする請求項1から請求項3のいずれかに記載のパワー半導体モジュール。
- 前記第1導電層は、第1部材及び当該第1部材と離間して配置された第2部材とで構成され、
前記第1部材の表面には第1トランジスタ及び第1ダイオードが配置され、
前記第1トランジスタと前記第1ダイオードとは、第1導電性ワイヤにより接続され、
前記第1トランジスタと第2部材とは、第2導電性ワイヤにより接続されていることを特徴とする請求項1から請求項4のいずれかに記載のパワー半導体モジュール。 - 前記第1導電層は、第1部材及び当該第1部材と離間して配置された第2部材とで構成され、
前記第1部材の表面には第1トランジスタ及び第1ダイオードが配置され、
前記第2部材の表面には第2トランジスタ及び第2ダイオードが配置され、
前記第1部材は、前記第1トランジスタの第1端子及び前記第1ダイオードの第1端子と接続され、
前記第1トランジスタの第2端子及び前記第1ダイオードの第2端子は、前記第2部材と接続され、
前記第2部材は、前記第2トランジスタの第1端子及び前記第2ダイオードの第1端子と接続され、
前記第2トランジスタの第2端子及び前記第2ダイオードの第2端子は、前記接続部材と接続されていることを特徴とする請求項1から請求項5のいずれかに記載のパワー半導体モジュール。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011168469A JP2013033812A (ja) | 2011-08-01 | 2011-08-01 | パワー半導体モジュール |
PCT/JP2012/069512 WO2013018811A1 (ja) | 2011-08-01 | 2012-07-31 | パワー半導体モジュール |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2011168469A JP2013033812A (ja) | 2011-08-01 | 2011-08-01 | パワー半導体モジュール |
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JP2013055278A (ja) * | 2011-09-06 | 2013-03-21 | Mitsubishi Electric Corp | 電力用半導体スイッチおよび電力変換装置 |
JP2015185630A (ja) * | 2014-03-24 | 2015-10-22 | 日産自動車株式会社 | ハーフブリッジパワー半導体モジュール及びその製造方法 |
WO2016002385A1 (ja) * | 2014-07-03 | 2016-01-07 | 日産自動車株式会社 | ハーフブリッジパワー半導体モジュール及びその製造方法 |
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WO2017163612A1 (ja) * | 2016-03-24 | 2017-09-28 | 株式会社日立製作所 | パワー半導体モジュール |
US10600765B2 (en) | 2015-10-22 | 2020-03-24 | Mitsubishi Electric Corporation | Semiconductor device and method for producing the same |
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JP6155282B2 (ja) * | 2012-12-13 | 2017-06-28 | 株式会社日立製作所 | パワー半導体モジュール及びこれを用いた電力変換装置 |
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JP3723869B2 (ja) * | 2001-03-30 | 2005-12-07 | 株式会社日立製作所 | 半導体装置 |
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JP2009182261A (ja) * | 2008-01-31 | 2009-08-13 | Rohm Co Ltd | 半導体装置 |
JP5185956B2 (ja) * | 2010-01-06 | 2013-04-17 | 三菱電機株式会社 | 電力用半導体装置 |
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- 2011-08-01 JP JP2011168469A patent/JP2013033812A/ja not_active Withdrawn
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- 2012-07-31 WO PCT/JP2012/069512 patent/WO2013018811A1/ja active Application Filing
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JP2015185630A (ja) * | 2014-03-24 | 2015-10-22 | 日産自動車株式会社 | ハーフブリッジパワー半導体モジュール及びその製造方法 |
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WO2016002385A1 (ja) * | 2014-07-03 | 2016-01-07 | 日産自動車株式会社 | ハーフブリッジパワー半導体モジュール及びその製造方法 |
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JPWO2017163612A1 (ja) * | 2016-03-24 | 2018-09-27 | 株式会社日立製作所 | パワー半導体モジュール |
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JP2021112025A (ja) * | 2020-01-09 | 2021-08-02 | 三菱電機株式会社 | 半導体装置 |
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