JP2012526914A - ウェハを処理する方法及びデバイス - Google Patents

ウェハを処理する方法及びデバイス Download PDF

Info

Publication number
JP2012526914A
JP2012526914A JP2012510292A JP2012510292A JP2012526914A JP 2012526914 A JP2012526914 A JP 2012526914A JP 2012510292 A JP2012510292 A JP 2012510292A JP 2012510292 A JP2012510292 A JP 2012510292A JP 2012526914 A JP2012526914 A JP 2012526914A
Authority
JP
Japan
Prior art keywords
wafer
coating solution
coating
region
overcurrent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012510292A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012526914A5 (enExample
Inventor
アンドレアス マウラー ベルナー
Original Assignee
ゲブリューダー シュミット ゲゼルシャフト ミット ベシュレンクテル ハフツング
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ゲブリューダー シュミット ゲゼルシャフト ミット ベシュレンクテル ハフツング filed Critical ゲブリューダー シュミット ゲゼルシャフト ミット ベシュレンクテル ハフツング
Publication of JP2012526914A publication Critical patent/JP2012526914A/ja
Publication of JP2012526914A5 publication Critical patent/JP2012526914A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/005—Contacting devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/024—Electroplating of selected surface areas using locally applied electromagnetic radiation, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Non-Insulated Conductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating Apparatus (AREA)
JP2012510292A 2009-05-13 2010-05-12 ウェハを処理する方法及びデバイス Pending JP2012526914A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009022337.1 2009-05-13
DE102009022337A DE102009022337A1 (de) 2009-05-13 2009-05-13 Verfahren und Vorrichtung zur Behandlung eines Substrats
PCT/EP2010/056555 WO2010130786A2 (de) 2009-05-13 2010-05-12 Verfahren und vorrichtung zur behandlung eines wafers

Publications (2)

Publication Number Publication Date
JP2012526914A true JP2012526914A (ja) 2012-11-01
JP2012526914A5 JP2012526914A5 (enExample) 2013-06-27

Family

ID=42979229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012510292A Pending JP2012526914A (ja) 2009-05-13 2010-05-12 ウェハを処理する方法及びデバイス

Country Status (13)

Country Link
US (1) US20120052611A1 (enExample)
EP (1) EP2430664A2 (enExample)
JP (1) JP2012526914A (enExample)
KR (1) KR20120018155A (enExample)
CN (1) CN102439730B (enExample)
AU (1) AU2010247404A1 (enExample)
CA (1) CA2761459A1 (enExample)
DE (1) DE102009022337A1 (enExample)
IL (1) IL216309A0 (enExample)
MX (1) MX2011011985A (enExample)
SG (1) SG175365A1 (enExample)
TW (1) TW201108449A (enExample)
WO (1) WO2010130786A2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009049565A1 (de) 2009-10-09 2011-04-14 Gebr. Schmid Gmbh & Co. Verfahren und Anlage zur Metallisierung von Siliziumwafern
CN103418530B (zh) * 2013-07-24 2015-12-23 南通大学 异型直接醇类燃料电池管状电极的涂覆方法及电极
CN104555243A (zh) * 2013-10-11 2015-04-29 宁夏琪凯节能设备有限公司 一种节能型胶带运输机
US11791159B2 (en) * 2019-01-17 2023-10-17 Ramesh kumar Harjivan Kakkad Method of fabricating thin, crystalline silicon film and thin film transistors
CN110528041A (zh) * 2019-08-13 2019-12-03 广州兴森快捷电路科技有限公司 用于晶元的电镀加工方法、晶元及线路板

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04314866A (ja) * 1991-04-12 1992-11-06 Hitachi Chem Co Ltd プリント配線板における無電解めっき方法
DE4311173A1 (de) * 1992-04-03 1993-10-07 Siemens Solar Gmbh Verfahren zur stromlosen Abscheidung eines Metalls über einer Halbleiteroberfläche
JPH08172271A (ja) * 1994-12-15 1996-07-02 Ebara Yuujiraito Kk プリント基板のめっき方法
JPH09503345A (ja) * 1993-09-30 1997-03-31 シーメンス ソーラー ゲゼルシャフト ミット ベシュレンクテル ハフツング 結晶シリコンからなる太陽電池の金属化方法
JPH09246695A (ja) * 1996-03-12 1997-09-19 Katsuya Hiroshige プリント基板等の銅パターンの表面処理方法及び装置
JP2002373996A (ja) * 2001-04-11 2002-12-26 Daido Steel Co Ltd 太陽電池セルおよびその製造方法
JP2007131940A (ja) * 2005-10-12 2007-05-31 Hitachi Chem Co Ltd 無電解銅めっき方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017079A1 (de) * 1980-05-03 1981-11-05 Thyssen AG vorm. August Thyssen-Hütte, 4100 Duisburg Vorrichtung zum elektroplattieren
GB2188774B (en) * 1986-04-02 1990-10-31 Westinghouse Electric Corp Method of forming a conductive pattern on a semiconductor surface
ES2096008T3 (es) 1991-11-11 1997-03-01 Solar Gmbh Siemens Procedimiento para la generacion de estructuras de electrodos finas.
US5833820A (en) * 1997-06-19 1998-11-10 Advanced Micro Devices, Inc. Electroplating apparatus
TW424807U (en) * 1998-05-06 2001-03-01 Ke Jian Shin Improved structure for rotatory conductive wheel
US6130150A (en) * 1999-08-06 2000-10-10 Lucent Technologies, Inc. Method of making a semiconductor device with barrier and conductor protection
DE10342512B3 (de) * 2003-09-12 2004-10-28 Atotech Deutschland Gmbh Vorrichtung und Verfahren zum elektrolytischen Behandeln von elektrisch gegeneinander isolierten, elektrisch leitfähigen Strukturen auf Oberflächen von bandförmigem Behandlungsgut
DE102005038450A1 (de) * 2005-08-03 2007-02-08 Gebr. Schmid Gmbh & Co. Einrichtung zur Behandlung von Substraten, insbesondere zur Galvanisierung von Substraten
DE102006033353B4 (de) * 2006-07-19 2010-11-18 Höllmüller Maschinenbau GmbH Verfahren und Vorrichtung zum Behandeln von flachen, zerbrechlichen Substraten
DE102007038120A1 (de) * 2007-07-31 2009-02-05 Gebr. Schmid Gmbh & Co. Verfahren zur Beschichtung von Solarzellen sowie Vorrichtung hierfür

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04314866A (ja) * 1991-04-12 1992-11-06 Hitachi Chem Co Ltd プリント配線板における無電解めっき方法
DE4311173A1 (de) * 1992-04-03 1993-10-07 Siemens Solar Gmbh Verfahren zur stromlosen Abscheidung eines Metalls über einer Halbleiteroberfläche
JPH09503345A (ja) * 1993-09-30 1997-03-31 シーメンス ソーラー ゲゼルシャフト ミット ベシュレンクテル ハフツング 結晶シリコンからなる太陽電池の金属化方法
JPH08172271A (ja) * 1994-12-15 1996-07-02 Ebara Yuujiraito Kk プリント基板のめっき方法
JPH09246695A (ja) * 1996-03-12 1997-09-19 Katsuya Hiroshige プリント基板等の銅パターンの表面処理方法及び装置
JP2002373996A (ja) * 2001-04-11 2002-12-26 Daido Steel Co Ltd 太陽電池セルおよびその製造方法
JP2007131940A (ja) * 2005-10-12 2007-05-31 Hitachi Chem Co Ltd 無電解銅めっき方法

Also Published As

Publication number Publication date
AU2010247404A1 (en) 2011-11-17
US20120052611A1 (en) 2012-03-01
EP2430664A2 (de) 2012-03-21
WO2010130786A3 (de) 2011-07-14
CN102439730B (zh) 2015-07-15
SG175365A1 (en) 2011-11-28
MX2011011985A (es) 2012-02-28
KR20120018155A (ko) 2012-02-29
IL216309A0 (en) 2012-01-31
CN102439730A (zh) 2012-05-02
TW201108449A (en) 2011-03-01
WO2010130786A2 (de) 2010-11-18
CA2761459A1 (en) 2010-11-18
DE102009022337A1 (de) 2010-11-18

Similar Documents

Publication Publication Date Title
KR101125418B1 (ko) 태양전지 금속 전극의 전기화학적 침착 방법
JP5301115B2 (ja) めっき方法
KR101578035B1 (ko) 반도체 상에서의 광 유도 플레이팅 방법
TWI532884B (zh) 用於製造太陽能電池之快速化學電沉積之裝置及方法
JP2012526914A (ja) ウェハを処理する方法及びデバイス
US20110062028A1 (en) Process and apparatus for electroplating substrates
JPS60189931A (ja) 半導体デバイスの電気コーテイング処理の方法
JP7757022B2 (ja) 半導体デバイスにおけるｔｃｏ材料の表面を処理するための方法および装置
US20100258444A1 (en) Apparatus and methods for chemical electrodeposition on a substrate for solar cell fabrication
WO2011054037A1 (en) Method and apparatus for light induced plating of solar cells
CN105590987A (zh) 一种水平电化学沉积金属的方法
US20190067498A1 (en) Light-induced aluminum plating on silicon for solar cell metallization
JP2012526914A5 (enExample)
US9786808B2 (en) Method of anodising a surface of a semiconductor device
CN106103812A (zh) 使用光诱导镀和正向偏压镀二者的太阳能电池基板电镀装置
US8399286B2 (en) Semiconductor device and method of making thereof
KR101370637B1 (ko) Ｃｉｓ계 박막 코팅 장치
US20100108525A1 (en) Light-induced plating
Kontoleta et al. Localized photodeposition of catalysts using nanophotonic resonances in silicon photocathodes
KR101567406B1 (ko) 전기도금 및 광유도도금을 병행하는 태양전지 기판용 도금장치
US11932960B2 (en) Light-induced aluminum plating on silicon for solar cell metallization
JP2004331991A (ja) 酸化亜鉛膜の電析方法、電析装置及び光起電力素子
CN118773702A (zh) 太阳能电池的制备方法及太阳能电池
CN121110142A (zh) 一种电池的电镀设备及方法
CN108604616A (zh) 用于可视化半成品CdTe薄膜太阳能电池中缺陷的方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130513

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130513

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140822

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140902

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20141201

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20141208

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20150721