WO2010130786A3 - Verfahren und vorrichtung zur behandlung eines wafers - Google Patents

Verfahren und vorrichtung zur behandlung eines wafers Download PDF

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Publication number
WO2010130786A3
WO2010130786A3 PCT/EP2010/056555 EP2010056555W WO2010130786A3 WO 2010130786 A3 WO2010130786 A3 WO 2010130786A3 EP 2010056555 W EP2010056555 W EP 2010056555W WO 2010130786 A3 WO2010130786 A3 WO 2010130786A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
area
coating bath
coating
metal
Prior art date
Application number
PCT/EP2010/056555
Other languages
English (en)
French (fr)
Other versions
WO2010130786A2 (de
Inventor
Werner Andreas Maurer
Original Assignee
Gebr. Schmid Gmbh & Co.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gebr. Schmid Gmbh & Co. filed Critical Gebr. Schmid Gmbh & Co.
Priority to AU2010247404A priority Critical patent/AU2010247404A1/en
Priority to JP2012510292A priority patent/JP2012526914A/ja
Priority to SG2011078755A priority patent/SG175365A1/en
Priority to CN201080020789.7A priority patent/CN102439730B/zh
Priority to CA2761459A priority patent/CA2761459A1/en
Priority to EP10720400A priority patent/EP2430664A2/de
Priority to MX2011011985A priority patent/MX2011011985A/es
Publication of WO2010130786A2 publication Critical patent/WO2010130786A2/de
Publication of WO2010130786A3 publication Critical patent/WO2010130786A3/de
Priority to IL216309A priority patent/IL216309A0/en
Priority to US13/294,569 priority patent/US20120052611A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/005—Contacting devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/024—Electroplating of selected surface areas using locally applied electromagnetic radiation, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Optics & Photonics (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Non-Insulated Conductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating Apparatus (AREA)

Abstract

Bei einem Beschichtungsverfahren eines Wafers zur Solarzellenherstellung wird in einem Durchlaufverfahren in einem Beschichtungsbad, das Metall wie Nickel, Kupfer oder Silber aufweist, dieses Metall auf dem Wafer abgeschieden. Ein Wafer wird in das Beschichtungsbad eingefahren und zu einem Zeitpunkt, zu dem der Wafer bereits mit einem ersten Bereich in das Beschichtungsbad hineinreicht und mit einem zweiten Bereich aber noch nicht, erfolgt an den zweiten Bereich des Wafers ein Stromstoß zum Anstoßen der galvanischen Abscheidung des Metalls auf dem in das Beschichtungsbad hineinreichenden ersten Bereich des Wafers für eine darauf folgende weitergehende selbsttätige Beschichtung bei ganz in das Beschichtungsbad eingefahrenem Wafer auch auf dessen restlicher Fläche ohne weiteren Stromstoß oder Stromfluss.
PCT/EP2010/056555 2009-05-13 2010-05-12 Verfahren und vorrichtung zur behandlung eines wafers WO2010130786A2 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
AU2010247404A AU2010247404A1 (en) 2009-05-13 2010-05-12 Method and device for treating a wafer
JP2012510292A JP2012526914A (ja) 2009-05-13 2010-05-12 ウェハを処理する方法及びデバイス
SG2011078755A SG175365A1 (en) 2009-05-13 2010-05-12 Method and device for treating a wafer
CN201080020789.7A CN102439730B (zh) 2009-05-13 2010-05-12 用于处理晶片的方法和设备
CA2761459A CA2761459A1 (en) 2009-05-13 2010-05-12 Method and device for treating a wafer
EP10720400A EP2430664A2 (de) 2009-05-13 2010-05-12 Verfahren und vorrichtung zur behandlung eines wafers
MX2011011985A MX2011011985A (es) 2009-05-13 2010-05-12 Aparato y metodo para tratar un disco.
IL216309A IL216309A0 (en) 2009-05-13 2011-11-10 Method and device for treating a wafer
US13/294,569 US20120052611A1 (en) 2009-05-13 2011-11-11 Method and device for treating a wafer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009022337A DE102009022337A1 (de) 2009-05-13 2009-05-13 Verfahren und Vorrichtung zur Behandlung eines Substrats
DE102009022337.1 2009-05-13

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/294,569 Continuation US20120052611A1 (en) 2009-05-13 2011-11-11 Method and device for treating a wafer

Publications (2)

Publication Number Publication Date
WO2010130786A2 WO2010130786A2 (de) 2010-11-18
WO2010130786A3 true WO2010130786A3 (de) 2011-07-14

Family

ID=42979229

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/056555 WO2010130786A2 (de) 2009-05-13 2010-05-12 Verfahren und vorrichtung zur behandlung eines wafers

Country Status (13)

Country Link
US (1) US20120052611A1 (de)
EP (1) EP2430664A2 (de)
JP (1) JP2012526914A (de)
KR (1) KR20120018155A (de)
CN (1) CN102439730B (de)
AU (1) AU2010247404A1 (de)
CA (1) CA2761459A1 (de)
DE (1) DE102009022337A1 (de)
IL (1) IL216309A0 (de)
MX (1) MX2011011985A (de)
SG (1) SG175365A1 (de)
TW (1) TW201108449A (de)
WO (1) WO2010130786A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009049565A1 (de) 2009-10-09 2011-04-14 Gebr. Schmid Gmbh & Co. Verfahren und Anlage zur Metallisierung von Siliziumwafern
CN103418530B (zh) * 2013-07-24 2015-12-23 南通大学 异型直接醇类燃料电池管状电极的涂覆方法及电极
CN104555243A (zh) * 2013-10-11 2015-04-29 宁夏琪凯节能设备有限公司 一种节能型胶带运输机
CN110528041A (zh) * 2019-08-13 2019-12-03 广州兴森快捷电路科技有限公司 用于晶元的电镀加工方法、晶元及线路板

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4347115A (en) * 1980-05-03 1982-08-31 Thyssen Aktiengesellschaft Vorm. August Thyssen-Hutte Electroplating apparatus
US6024849A (en) * 1998-05-06 2000-02-15 Ko; Chien-Hsin Conducting roller for an electroplating apparatus
DE10342512B3 (de) * 2003-09-12 2004-10-28 Atotech Deutschland Gmbh Vorrichtung und Verfahren zum elektrolytischen Behandeln von elektrisch gegeneinander isolierten, elektrisch leitfähigen Strukturen auf Oberflächen von bandförmigem Behandlungsgut
DE102005038450A1 (de) * 2005-08-03 2007-02-08 Gebr. Schmid Gmbh & Co. Einrichtung zur Behandlung von Substraten, insbesondere zur Galvanisierung von Substraten
DE102006033353A1 (de) * 2006-07-19 2008-01-24 Höllmüller Maschinenbau GmbH Verfahren und Vorrichtung zum Behandeln von flachen, zerbrechlichen Substraten
DE102007038120A1 (de) * 2007-07-31 2009-02-05 Gebr. Schmid Gmbh & Co. Verfahren zur Beschichtung von Solarzellen sowie Vorrichtung hierfür

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2188774B (en) * 1986-04-02 1990-10-31 Westinghouse Electric Corp Method of forming a conductive pattern on a semiconductor surface
JPH04314866A (ja) * 1991-04-12 1992-11-06 Hitachi Chem Co Ltd プリント配線板における無電解めっき方法
DE59207945D1 (de) 1991-11-11 1997-03-06 Siemens Solar Gmbh Verfahren zum Erzeugen feiner Elektrodenstruckturen
DE4311173A1 (de) * 1992-04-03 1993-10-07 Siemens Solar Gmbh Verfahren zur stromlosen Abscheidung eines Metalls über einer Halbleiteroberfläche
DE4333426C1 (de) 1993-09-30 1994-12-15 Siemens Solar Gmbh Verfahren zur Metallisierung von Solarzellen aus kristallinem Silizium
JPH08172271A (ja) * 1994-12-15 1996-07-02 Ebara Yuujiraito Kk プリント基板のめっき方法
JPH09246695A (ja) * 1996-03-12 1997-09-19 Katsuya Hiroshige プリント基板等の銅パターンの表面処理方法及び装置
US5833820A (en) * 1997-06-19 1998-11-10 Advanced Micro Devices, Inc. Electroplating apparatus
US6130150A (en) * 1999-08-06 2000-10-10 Lucent Technologies, Inc. Method of making a semiconductor device with barrier and conductor protection
JP2002373996A (ja) * 2001-04-11 2002-12-26 Daido Steel Co Ltd 太陽電池セルおよびその製造方法
JP2007131940A (ja) * 2005-10-12 2007-05-31 Hitachi Chem Co Ltd 無電解銅めっき方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4347115A (en) * 1980-05-03 1982-08-31 Thyssen Aktiengesellschaft Vorm. August Thyssen-Hutte Electroplating apparatus
US6024849A (en) * 1998-05-06 2000-02-15 Ko; Chien-Hsin Conducting roller for an electroplating apparatus
DE10342512B3 (de) * 2003-09-12 2004-10-28 Atotech Deutschland Gmbh Vorrichtung und Verfahren zum elektrolytischen Behandeln von elektrisch gegeneinander isolierten, elektrisch leitfähigen Strukturen auf Oberflächen von bandförmigem Behandlungsgut
DE102005038450A1 (de) * 2005-08-03 2007-02-08 Gebr. Schmid Gmbh & Co. Einrichtung zur Behandlung von Substraten, insbesondere zur Galvanisierung von Substraten
DE102006033353A1 (de) * 2006-07-19 2008-01-24 Höllmüller Maschinenbau GmbH Verfahren und Vorrichtung zum Behandeln von flachen, zerbrechlichen Substraten
DE102007038120A1 (de) * 2007-07-31 2009-02-05 Gebr. Schmid Gmbh & Co. Verfahren zur Beschichtung von Solarzellen sowie Vorrichtung hierfür

Also Published As

Publication number Publication date
CN102439730A (zh) 2012-05-02
EP2430664A2 (de) 2012-03-21
DE102009022337A1 (de) 2010-11-18
TW201108449A (en) 2011-03-01
IL216309A0 (en) 2012-01-31
CA2761459A1 (en) 2010-11-18
WO2010130786A2 (de) 2010-11-18
MX2011011985A (es) 2012-02-28
SG175365A1 (en) 2011-11-28
CN102439730B (zh) 2015-07-15
US20120052611A1 (en) 2012-03-01
KR20120018155A (ko) 2012-02-29
AU2010247404A1 (en) 2011-11-17
JP2012526914A (ja) 2012-11-01

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