IL216309A0 - Method and device for treating a wafer - Google Patents

Method and device for treating a wafer

Info

Publication number
IL216309A0
IL216309A0 IL216309A IL21630911A IL216309A0 IL 216309 A0 IL216309 A0 IL 216309A0 IL 216309 A IL216309 A IL 216309A IL 21630911 A IL21630911 A IL 21630911A IL 216309 A0 IL216309 A0 IL 216309A0
Authority
IL
Israel
Prior art keywords
wafer
treating
Prior art date
Application number
IL216309A
Other languages
English (en)
Original Assignee
Schmid Gmbh Gebr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schmid Gmbh Gebr filed Critical Schmid Gmbh Gebr
Publication of IL216309A0 publication Critical patent/IL216309A0/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/005—Contacting devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/024—Electroplating of selected surface areas using locally applied electromagnetic radiation, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Non-Insulated Conductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating Apparatus (AREA)
IL216309A 2009-05-13 2011-11-10 Method and device for treating a wafer IL216309A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009022337A DE102009022337A1 (de) 2009-05-13 2009-05-13 Verfahren und Vorrichtung zur Behandlung eines Substrats
PCT/EP2010/056555 WO2010130786A2 (de) 2009-05-13 2010-05-12 Verfahren und vorrichtung zur behandlung eines wafers

Publications (1)

Publication Number Publication Date
IL216309A0 true IL216309A0 (en) 2012-01-31

Family

ID=42979229

Family Applications (1)

Application Number Title Priority Date Filing Date
IL216309A IL216309A0 (en) 2009-05-13 2011-11-10 Method and device for treating a wafer

Country Status (13)

Country Link
US (1) US20120052611A1 (enExample)
EP (1) EP2430664A2 (enExample)
JP (1) JP2012526914A (enExample)
KR (1) KR20120018155A (enExample)
CN (1) CN102439730B (enExample)
AU (1) AU2010247404A1 (enExample)
CA (1) CA2761459A1 (enExample)
DE (1) DE102009022337A1 (enExample)
IL (1) IL216309A0 (enExample)
MX (1) MX2011011985A (enExample)
SG (1) SG175365A1 (enExample)
TW (1) TW201108449A (enExample)
WO (1) WO2010130786A2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009049565A1 (de) 2009-10-09 2011-04-14 Gebr. Schmid Gmbh & Co. Verfahren und Anlage zur Metallisierung von Siliziumwafern
CN103418530B (zh) * 2013-07-24 2015-12-23 南通大学 异型直接醇类燃料电池管状电极的涂覆方法及电极
CN104555243A (zh) * 2013-10-11 2015-04-29 宁夏琪凯节能设备有限公司 一种节能型胶带运输机
US11791159B2 (en) * 2019-01-17 2023-10-17 Ramesh kumar Harjivan Kakkad Method of fabricating thin, crystalline silicon film and thin film transistors
CN110528041A (zh) * 2019-08-13 2019-12-03 广州兴森快捷电路科技有限公司 用于晶元的电镀加工方法、晶元及线路板

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017079A1 (de) * 1980-05-03 1981-11-05 Thyssen AG vorm. August Thyssen-Hütte, 4100 Duisburg Vorrichtung zum elektroplattieren
GB2188774B (en) * 1986-04-02 1990-10-31 Westinghouse Electric Corp Method of forming a conductive pattern on a semiconductor surface
JPH04314866A (ja) * 1991-04-12 1992-11-06 Hitachi Chem Co Ltd プリント配線板における無電解めっき方法
ES2096008T3 (es) 1991-11-11 1997-03-01 Solar Gmbh Siemens Procedimiento para la generacion de estructuras de electrodos finas.
DE4311173A1 (de) * 1992-04-03 1993-10-07 Siemens Solar Gmbh Verfahren zur stromlosen Abscheidung eines Metalls über einer Halbleiteroberfläche
DE4333426C1 (de) 1993-09-30 1994-12-15 Siemens Solar Gmbh Verfahren zur Metallisierung von Solarzellen aus kristallinem Silizium
JPH08172271A (ja) * 1994-12-15 1996-07-02 Ebara Yuujiraito Kk プリント基板のめっき方法
JPH09246695A (ja) * 1996-03-12 1997-09-19 Katsuya Hiroshige プリント基板等の銅パターンの表面処理方法及び装置
US5833820A (en) * 1997-06-19 1998-11-10 Advanced Micro Devices, Inc. Electroplating apparatus
TW424807U (en) * 1998-05-06 2001-03-01 Ke Jian Shin Improved structure for rotatory conductive wheel
US6130150A (en) * 1999-08-06 2000-10-10 Lucent Technologies, Inc. Method of making a semiconductor device with barrier and conductor protection
JP2002373996A (ja) * 2001-04-11 2002-12-26 Daido Steel Co Ltd 太陽電池セルおよびその製造方法
DE10342512B3 (de) * 2003-09-12 2004-10-28 Atotech Deutschland Gmbh Vorrichtung und Verfahren zum elektrolytischen Behandeln von elektrisch gegeneinander isolierten, elektrisch leitfähigen Strukturen auf Oberflächen von bandförmigem Behandlungsgut
DE102005038450A1 (de) * 2005-08-03 2007-02-08 Gebr. Schmid Gmbh & Co. Einrichtung zur Behandlung von Substraten, insbesondere zur Galvanisierung von Substraten
JP2007131940A (ja) * 2005-10-12 2007-05-31 Hitachi Chem Co Ltd 無電解銅めっき方法
DE102006033353B4 (de) * 2006-07-19 2010-11-18 Höllmüller Maschinenbau GmbH Verfahren und Vorrichtung zum Behandeln von flachen, zerbrechlichen Substraten
DE102007038120A1 (de) * 2007-07-31 2009-02-05 Gebr. Schmid Gmbh & Co. Verfahren zur Beschichtung von Solarzellen sowie Vorrichtung hierfür

Also Published As

Publication number Publication date
AU2010247404A1 (en) 2011-11-17
US20120052611A1 (en) 2012-03-01
EP2430664A2 (de) 2012-03-21
WO2010130786A3 (de) 2011-07-14
CN102439730B (zh) 2015-07-15
SG175365A1 (en) 2011-11-28
MX2011011985A (es) 2012-02-28
KR20120018155A (ko) 2012-02-29
CN102439730A (zh) 2012-05-02
JP2012526914A (ja) 2012-11-01
TW201108449A (en) 2011-03-01
WO2010130786A2 (de) 2010-11-18
CA2761459A1 (en) 2010-11-18
DE102009022337A1 (de) 2010-11-18

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