PT2443669T - Dispositivo semicondutor e método de fabrico de um dispositivo semicondutor - Google Patents

Dispositivo semicondutor e método de fabrico de um dispositivo semicondutor

Info

Publication number
PT2443669T
PT2443669T PT10747802T PT10747802T PT2443669T PT 2443669 T PT2443669 T PT 2443669T PT 10747802 T PT10747802 T PT 10747802T PT 10747802 T PT10747802 T PT 10747802T PT 2443669 T PT2443669 T PT 2443669T
Authority
PT
Portugal
Prior art keywords
semiconductor apparatus
fabrication
semiconductor
Prior art date
Application number
PT10747802T
Other languages
English (en)
Inventor
Engelhart Peter
Seguin Robert
Mathijs Marie Kessels Wilhelmus
Dingemans Gijs
Original Assignee
Hanwha Q Cells Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=42781564&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=PT2443669(T) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hanwha Q Cells Gmbh filed Critical Hanwha Q Cells Gmbh
Publication of PT2443669T publication Critical patent/PT2443669T/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
PT10747802T 2009-06-16 2010-05-31 Dispositivo semicondutor e método de fabrico de um dispositivo semicondutor PT2443669T (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009025977A DE102009025977A1 (de) 2009-06-16 2009-06-16 Solarzelle und Herstellungsverfahren einer Solarzelle

Publications (1)

Publication Number Publication Date
PT2443669T true PT2443669T (pt) 2018-10-09

Family

ID=42781564

Family Applications (1)

Application Number Title Priority Date Filing Date
PT10747802T PT2443669T (pt) 2009-06-16 2010-05-31 Dispositivo semicondutor e método de fabrico de um dispositivo semicondutor

Country Status (8)

Country Link
US (1) US8933525B2 (pt)
EP (1) EP2443669B1 (pt)
JP (1) JP2012530361A (pt)
CN (1) CN102804407B (pt)
DE (1) DE102009025977A1 (pt)
ES (1) ES2683911T3 (pt)
PT (1) PT2443669T (pt)
WO (1) WO2010145648A1 (pt)

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KR101699312B1 (ko) * 2011-01-28 2017-01-24 엘지전자 주식회사 태양 전지 및 그 제조 방법
TWI482294B (zh) * 2011-03-22 2015-04-21 Nat Univ Tsing Hua 製作背面具有介電質層以及分散式接觸電極之矽太陽能電池之方法及該元件
DE102011077526A1 (de) * 2011-06-15 2012-12-20 Robert Bosch Gmbh Verfahren zur Herstellung einer Halbleitereinrichtung
FI20116217A (fi) * 2011-12-02 2013-06-03 Beneq Oy Piitä sisältävä n-tyypin aurinkokennopari
US9136402B2 (en) * 2012-02-28 2015-09-15 International Business Machines Corporation High efficiency flexible solar cells for consumer electronics
DE102012007115A1 (de) * 2012-04-04 2013-10-10 Universität Stuttgart Verfahren zum Herstellen einer Solarzelle
TWI474488B (zh) * 2012-09-21 2015-02-21 Ind Tech Res Inst 太陽能電池
KR101889775B1 (ko) 2012-09-27 2018-08-20 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN103035770A (zh) * 2012-12-21 2013-04-10 常州天合光能有限公司 背钝化的ibc太阳能电池结构及其制备方法
CN103050553B (zh) * 2012-12-29 2015-06-24 中国科学院沈阳科学仪器股份有限公司 一种双面钝化晶硅太阳能电池及其制备方法
CN103311340B (zh) * 2013-05-15 2016-08-24 常州天合光能有限公司 叠层薄膜背面钝化的太阳能电池及其制备方法
KR101614190B1 (ko) 2013-12-24 2016-04-20 엘지전자 주식회사 태양전지 및 이의 제조 방법
CN104218113A (zh) * 2014-09-15 2014-12-17 奥特斯维能源（太仓）有限公司 一种n型perc晶体硅太阳能电池及其制备方法
CN104218115A (zh) * 2014-09-15 2014-12-17 奥特斯维能源（太仓）有限公司 一种n型perc晶体硅太阳能电池及其制备方法
CN104218101A (zh) * 2014-09-15 2014-12-17 奥特斯维能源（太仓）有限公司 一种n型局域铝背晶体硅太阳能电池及其制备方法
CN107690709B (zh) 2015-05-27 2019-09-24 京瓷株式会社 太阳能电池元件及其制造方法
CN112908846B (zh) * 2019-12-02 2024-06-11 财团法人金属工业研究发展中心 形成半导体结构的方法及半导体结构
CN112466963B (zh) * 2020-11-25 2022-12-02 隆基绿能科技股份有限公司 碳化硅光伏器件
CN116960193A (zh) * 2022-04-15 2023-10-27 隆基绿能科技股份有限公司 一种太阳能电池及其生产方法、光伏组件
CN114937707B (zh) * 2022-05-19 2024-08-20 苏州大学 一种电子钝化接触结构及晶硅太阳电池
CN114944433A (zh) * 2022-05-19 2022-08-26 苏州大学 一种晶硅太阳电池表面钝化材料
CN116913984B (zh) * 2023-09-12 2024-01-30 通威太阳能(眉山)有限公司 电介质层及制备方法、太阳电池、光伏组件

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US4804640A (en) * 1985-08-27 1989-02-14 General Electric Company Method of forming silicon and aluminum containing dielectric film and semiconductor device including said film
JP2989923B2 (ja) 1991-03-25 1999-12-13 京セラ株式会社 太陽電池素子
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JPH10229211A (ja) * 1997-02-18 1998-08-25 Hitachi Ltd 光電変換装置およびその製造方法
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JP4186725B2 (ja) * 2003-06-24 2008-11-26 トヨタ自動車株式会社 光電変換素子
JP4262153B2 (ja) 2004-07-02 2009-05-13 キヤノン株式会社 位置決め装置およびそれを用いた露光装置
JP2006073617A (ja) 2004-08-31 2006-03-16 Sharp Corp 太陽電池およびその製造方法
US7507629B2 (en) 2004-09-10 2009-03-24 Gerald Lucovsky Semiconductor devices having an interfacial dielectric layer and related methods
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CN101305472B (zh) * 2005-11-08 2011-07-13 Lg电子株式会社 高效太阳能电池及其制备方法
EP1958242A4 (en) * 2005-11-24 2010-02-24 Newsouth Innovations Pty Ltd PREPARATION OF SOLAR CELLS WITH HIGH EFFICIENCY
NO20061668L (no) * 2006-04-12 2007-10-15 Renewable Energy Corp Solcelle og fremgangsmate for fremstilling av samme
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JP5019397B2 (ja) * 2006-12-01 2012-09-05 シャープ株式会社 太陽電池およびその製造方法
KR20100015622A (ko) 2007-03-16 2010-02-12 비피 코포레이션 노쓰 아메리카 인코포레이티드 태양 전지
US20090056797A1 (en) * 2007-08-28 2009-03-05 Blue Square Energy Incorporated Photovoltaic Thin-Film Solar Cell and Method Of Making The Same
DE102007054384A1 (de) 2007-11-14 2009-05-20 Institut Für Solarenergieforschung Gmbh Verfahren zum Herstellen einer Solarzelle mit einer oberflächenpassivierenden Dielektrikumdoppelschicht und entsprechende Solarzelle
JP5004932B2 (ja) 2008-12-04 2012-08-22 シャープ株式会社 太陽電池および太陽電池の製造方法

Also Published As

Publication number Publication date
CN102804407A (zh) 2012-11-28
EP2443669B1 (de) 2018-05-23
ES2683911T3 (es) 2018-09-28
JP2012530361A (ja) 2012-11-29
DE102009025977A1 (de) 2010-12-23
WO2010145648A1 (de) 2010-12-23
EP2443669A1 (de) 2012-04-25
US8933525B2 (en) 2015-01-13
CN102804407B (zh) 2016-05-11
US20120091566A1 (en) 2012-04-19

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